FR2416587A1 - Amplificateur de signaux impulsionnels - Google Patents

Amplificateur de signaux impulsionnels

Info

Publication number
FR2416587A1
FR2416587A1 FR7902364A FR7902364A FR2416587A1 FR 2416587 A1 FR2416587 A1 FR 2416587A1 FR 7902364 A FR7902364 A FR 7902364A FR 7902364 A FR7902364 A FR 7902364A FR 2416587 A1 FR2416587 A1 FR 2416587A1
Authority
FR
France
Prior art keywords
transistor
electrode
pulse signal
signal amplifier
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7902364A
Other languages
English (en)
Other versions
FR2416587B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2416587A1 publication Critical patent/FR2416587A1/fr
Application granted granted Critical
Publication of FR2416587B1 publication Critical patent/FR2416587B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)

Abstract

a. Amplificateur de signaux impulsionnels. b. Amplificateur caractérisé par un moyen capacitif ayant une première et une seconde bornes, la première borne étant reliée à la troisième électrode du premier transistor et la seconde borne étant reliée à la troisième électrode du second transistor et au point de référence, un moyen de commutation étant branché entre la sortie de la source de signaux de courant impulsionnels et la troisième électrode du premier transistor pour laisser passer une fraction du courant de sortie de la source de signaux de courant impulsionnels, vers la capacité pour la charger lorsque le courant de porte du transistor à effet de champ n'est pas appliqué à la troisième et à la seconde électrodes du premier transistor.
FR7902364A 1978-01-31 1979-01-30 Amplificateur de signaux impulsionnels Granted FR2416587A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP945778A JPS54102956A (en) 1978-01-31 1978-01-31 Pulse amplifier circuit

Publications (2)

Publication Number Publication Date
FR2416587A1 true FR2416587A1 (fr) 1979-08-31
FR2416587B1 FR2416587B1 (fr) 1982-10-29

Family

ID=11720810

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7902364A Granted FR2416587A1 (fr) 1978-01-31 1979-01-30 Amplificateur de signaux impulsionnels

Country Status (7)

Country Link
US (1) US4266149A (fr)
JP (1) JPS54102956A (fr)
AU (1) AU522539B2 (fr)
DE (1) DE2903668A1 (fr)
FR (1) FR2416587A1 (fr)
GB (1) GB2015287B (fr)
NL (1) NL7900727A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4347445A (en) * 1979-12-31 1982-08-31 Exxon Research And Engineering Co. Floating hybrid switch
US4443719A (en) * 1982-06-11 1984-04-17 Honeywell Inc. Voltage isolated gate drive circuit
US4500801A (en) * 1982-06-21 1985-02-19 Eaton Corporation Self-powered nonregenerative fast gate turn-off FET
US4481434A (en) * 1982-06-21 1984-11-06 Eaton Corporation Self regenerative fast gate turn-off FET
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
DE3280350D1 (de) * 1982-08-25 1991-09-26 Ibm Deutschland Transistor-leistungsverstaerker mit verringerten schaltzeiten.
US4588904A (en) * 1983-09-16 1986-05-13 At&T Bell Laboratories High efficiency bias circuit for high frequency inductively loaded power switching transistor
US5371415A (en) * 1993-06-21 1994-12-06 Motorola, Inc. Two stage gate drive circuit for a FET
US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2372545A1 (fr) * 1976-11-25 1978-06-23 Sony Corp Amplificateur a transistor a effet de champ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3127522A (en) * 1959-01-30 1964-03-31 Sperry Rand Corp Time controlled switch using saturable core input
JPS50150346A (fr) * 1974-05-21 1975-12-02
JPS5810884B2 (ja) * 1974-09-06 1983-02-28 ヤマハ株式会社 ドライブカイロ
JPS52137244A (en) * 1976-05-12 1977-11-16 Fujitsu Ltd Complementary mos driving circuit
US4045719A (en) * 1976-06-14 1977-08-30 Rca Corporation Regulated voltage source

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2372545A1 (fr) * 1976-11-25 1978-06-23 Sony Corp Amplificateur a transistor a effet de champ

Also Published As

Publication number Publication date
DE2903668C2 (fr) 1987-08-27
US4266149A (en) 1981-05-05
NL7900727A (nl) 1979-08-02
GB2015287B (en) 1982-04-28
AU522539B2 (en) 1982-06-10
AU4379279A (en) 1979-08-09
JPS54102956A (en) 1979-08-13
FR2416587B1 (fr) 1982-10-29
DE2903668A1 (de) 1979-08-02
GB2015287A (en) 1979-09-05

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Legal Events

Date Code Title Description
ST Notification of lapse