FR2400260A1 - Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier - Google Patents

Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier

Info

Publication number
FR2400260A1
FR2400260A1 FR7832899A FR7832899A FR2400260A1 FR 2400260 A1 FR2400260 A1 FR 2400260A1 FR 7832899 A FR7832899 A FR 7832899A FR 7832899 A FR7832899 A FR 7832899A FR 2400260 A1 FR2400260 A1 FR 2400260A1
Authority
FR
France
Prior art keywords
region
source
substrate
transistors
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7832899A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2400260A1 publication Critical patent/FR2400260A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

Montage, caractérisé en ce qu'il comprend : un transistor à effet de champ à grille isolée du type à canal p et un transistor à effet de champ à grille isolée du type à canal n, chacun de ces transistors comportant une région de source et une région de drain formées dans un substrat semi-conducteur, une région de grille décalée faiblement dopée du même type de conductibilité que la région de drain et formée dans la surface principale du substrat au voisinage immédiat de ladite région de drain, une source reliée à la région de source, un drain relié à la région de drain, une grille formée sur une pellicule isolante recouvrant la surface principale définissant le canal du transistor entre la région de source et la région de grille décalée, une électrode de substrat disposée sur ledit substrat, la source étant d'ordinaire reliée à l'électrode de substrat; des moyens de connexion pour relier les sources des deux transistors en commun à une borne de sortie; des moyens d'ajustement de polarisation connectés aux grilles respectives desdits transistors; et des moyens couplés avec lesdites grilles pour leur appliquer un signal d'entrée.
FR7832899A 1977-04-15 1978-11-22 Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier Withdrawn FR2400260A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4265177A JPS53128281A (en) 1977-04-15 1977-04-15 Insulated gate field effect type semiconductor device for large power

Publications (1)

Publication Number Publication Date
FR2400260A1 true FR2400260A1 (fr) 1979-03-09

Family

ID=12641902

Family Applications (4)

Application Number Title Priority Date Filing Date
FR7808644A Withdrawn FR2399126A1 (fr) 1977-04-15 1978-03-24 Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier
FR7832898A Withdrawn FR2396412A1 (fr) 1977-04-15 1978-11-22
FR7832897A Withdrawn FR2400259A1 (fr) 1977-04-15 1978-11-22 Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier
FR7832899A Withdrawn FR2400260A1 (fr) 1977-04-15 1978-11-22 Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier

Family Applications Before (3)

Application Number Title Priority Date Filing Date
FR7808644A Withdrawn FR2399126A1 (fr) 1977-04-15 1978-03-24 Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier
FR7832898A Withdrawn FR2396412A1 (fr) 1977-04-15 1978-11-22
FR7832897A Withdrawn FR2400259A1 (fr) 1977-04-15 1978-11-22 Dispositif semi-conducteur a effet de champ du type a grille isolee, montage utilisant ce dispositif et procede de fabrication de ce dernier

Country Status (5)

Country Link
US (1) US4599576A (fr)
JP (1) JPS53128281A (fr)
DE (1) DE2816271C2 (fr)
FR (4) FR2399126A1 (fr)
NL (1) NL7804028A (fr)

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US4735914A (en) * 1979-03-28 1988-04-05 Honeywell Inc. FET for high reverse bias voltage and geometrical design for low on resistance
US5187552A (en) * 1979-03-28 1993-02-16 Hendrickson Thomas E Shielded field-effect transistor devices
FR2460542A1 (fr) * 1979-06-29 1981-01-23 Thomson Csf Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor
US4394674A (en) * 1979-10-09 1983-07-19 Nippon Electric Co., Ltd. Insulated gate field effect transistor
JPS5950562A (ja) * 1982-09-17 1984-03-23 Toshiba Corp 半導体装置
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
JPS61135149A (ja) * 1984-12-06 1986-06-23 Toshiba Corp Ｍｏｓ型集積回路
JP2566207B2 (ja) * 1986-09-23 1996-12-25 シーメンス、アクチエンゲゼルシヤフト 半導体デバイス
US4978628A (en) * 1986-11-19 1990-12-18 Teledyne Industries, Inc. Drail-well/extension high voltage MOS transistor structure and method of fabrication
JPS63262873A (ja) * 1987-04-21 1988-10-31 Fuji Xerox Co Ltd 半導体装置
US4937756A (en) * 1988-01-15 1990-06-26 Industrial Technology Research Institute Gated isolated structure
US4991221A (en) * 1989-04-13 1991-02-05 Rush James M Active speaker system and components therefor
EP0445756B1 (fr) * 1990-03-05 1995-07-12 Fujitsu Limited Transitor MOS à haute tension et procédé de fabrication et dispositif à semi-conducteur avec un transistor MOS à haute tension et procédé de fabrication
US5234853A (en) * 1990-03-05 1993-08-10 Fujitsu Limited Method of producing a high voltage MOS transistor
JPH06143574A (ja) * 1992-11-05 1994-05-24 Xerox Corp エンハンスされた相互コンダクタンスを持つパワーｍｏｓドライバデバイスを有するサーマルインクジェットプリントヘッド
US5396097A (en) * 1993-11-22 1995-03-07 Motorola Inc Transistor with common base region
US5751015A (en) * 1995-11-17 1998-05-12 Micron Technology, Inc. Semiconductor reliability test chip
JP3287279B2 (ja) * 1997-09-25 2002-06-04 日本電気株式会社 半導体チップ、および該半導体チップが実装された半導体装置
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
WO2009042807A2 (fr) 2007-09-26 2009-04-02 Lakota Technologies, Inc. Redresseur à effet de champ ajustable
US8148748B2 (en) 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
US8487547B2 (en) * 2008-04-24 2013-07-16 Cypress Semiconductor Corporation Lighting assembly, circuits and methods
US9179509B2 (en) * 2008-04-24 2015-11-03 Google Inc. Light emitting diode assembly
EP2384518B1 (fr) 2009-01-06 2019-09-04 STMicroelectronics N.V. Structures de diode à effet de champ à auto-amorçage et procédés correspondants
WO2010127370A2 (fr) * 2009-05-01 2010-11-04 Lakota Technologies, Inc. Dispositif de limitation de courant série
US8937797B2 (en) * 2012-03-19 2015-01-20 Allegro Microsystems, Llc Method and apparatus to detect a broken wire condition in an integrated circuit
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Also Published As

Publication number Publication date
FR2399126A1 (fr) 1979-02-23
FR2400259A1 (fr) 1979-03-09
US4599576A (en) 1986-07-08
JPS53128281A (en) 1978-11-09
JPS6159540B2 (fr) 1986-12-17
NL7804028A (nl) 1978-10-17
DE2816271A1 (de) 1978-11-02
DE2816271C2 (de) 1984-06-20
FR2396412A1 (fr) 1979-01-26

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