NL7804028A - Veldeffekt-halfgeleiderinrichting van het type met geisoleerd stuurgebied, schakeling onder toepassing van een dergelijke inrichting en een werkwijze voor de ver- vaardiging van de inrichting. - Google Patents
Veldeffekt-halfgeleiderinrichting van het type met geisoleerd stuurgebied, schakeling onder toepassing van een dergelijke inrichting en een werkwijze voor de ver- vaardiging van de inrichting.Info
- Publication number
- NL7804028A NL7804028A NL7804028A NL7804028A NL7804028A NL 7804028 A NL7804028 A NL 7804028A NL 7804028 A NL7804028 A NL 7804028A NL 7804028 A NL7804028 A NL 7804028A NL 7804028 A NL7804028 A NL 7804028A
- Authority
- NL
- Netherlands
- Prior art keywords
- veldeffekt
- semiconductor
- switching
- manufacturing
- type
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4265177A JPS53128281A (en) | 1977-04-15 | 1977-04-15 | Insulated gate field effect type semiconductor device for large power |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7804028A true NL7804028A (nl) | 1978-10-17 |
Family
ID=12641902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7804028A NL7804028A (nl) | 1977-04-15 | 1978-04-14 | Veldeffekt-halfgeleiderinrichting van het type met geisoleerd stuurgebied, schakeling onder toepassing van een dergelijke inrichting en een werkwijze voor de ver- vaardiging van de inrichting. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4599576A (xx) |
JP (1) | JPS53128281A (xx) |
DE (1) | DE2816271C2 (xx) |
FR (4) | FR2399126A1 (xx) |
NL (1) | NL7804028A (xx) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4394674A (en) * | 1979-10-09 | 1983-07-19 | Nippon Electric Co., Ltd. | Insulated gate field effect transistor |
US4506279A (en) * | 1982-09-17 | 1985-03-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Metal-oxide-semiconductor device with bilayered source and drain |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5187552A (en) * | 1979-03-28 | 1993-02-16 | Hendrickson Thomas E | Shielded field-effect transistor devices |
US4735914A (en) * | 1979-03-28 | 1988-04-05 | Honeywell Inc. | FET for high reverse bias voltage and geometrical design for low on resistance |
FR2460542A1 (fr) * | 1979-06-29 | 1981-01-23 | Thomson Csf | Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor |
JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Mosトランジスタ |
JPS61135149A (ja) * | 1984-12-06 | 1986-06-23 | Toshiba Corp | Mos型集積回路 |
JP2566207B2 (ja) * | 1986-09-23 | 1996-12-25 | シーメンス、アクチエンゲゼルシヤフト | 半導体デバイス |
US4978628A (en) * | 1986-11-19 | 1990-12-18 | Teledyne Industries, Inc. | Drail-well/extension high voltage MOS transistor structure and method of fabrication |
JPS63262873A (ja) * | 1987-04-21 | 1988-10-31 | Fuji Xerox Co Ltd | 半導体装置 |
US4937756A (en) * | 1988-01-15 | 1990-06-26 | Industrial Technology Research Institute | Gated isolated structure |
US4991221A (en) * | 1989-04-13 | 1991-02-05 | Rush James M | Active speaker system and components therefor |
US5234853A (en) * | 1990-03-05 | 1993-08-10 | Fujitsu Limited | Method of producing a high voltage MOS transistor |
US5140392A (en) * | 1990-03-05 | 1992-08-18 | Fujitsu Limited | High voltage mos transistor and production method thereof, and semiconductor device having high voltage mos transistor and production method thereof |
JPH06143574A (ja) * | 1992-11-05 | 1994-05-24 | Xerox Corp | エンハンスされた相互コンダクタンスを持つパワーmosドライバデバイスを有するサーマルインクジェットプリントヘッド |
US5396097A (en) * | 1993-11-22 | 1995-03-07 | Motorola Inc | Transistor with common base region |
US5751015A (en) * | 1995-11-17 | 1998-05-12 | Micron Technology, Inc. | Semiconductor reliability test chip |
JP3287279B2 (ja) * | 1997-09-25 | 2002-06-04 | 日本電気株式会社 | 半導体チップ、および該半導体チップが実装された半導体装置 |
US6642578B1 (en) | 2002-07-22 | 2003-11-04 | Anadigics, Inc. | Linearity radio frequency switch with low control voltage |
US8148748B2 (en) * | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
EP2232559B1 (en) * | 2007-09-26 | 2019-05-15 | STMicroelectronics N.V. | Adjustable field effect rectifier |
US9179509B2 (en) * | 2008-04-24 | 2015-11-03 | Google Inc. | Light emitting diode assembly |
US8487547B2 (en) * | 2008-04-24 | 2013-07-16 | Cypress Semiconductor Corporation | Lighting assembly, circuits and methods |
WO2010080855A2 (en) | 2009-01-06 | 2010-07-15 | Lakota Technologies Inc. | Self-bootstrapping field effect diode structures and methods |
WO2010127370A2 (en) * | 2009-05-01 | 2010-11-04 | Lakota Technologies, Inc. | Series current limiting device |
US8937797B2 (en) * | 2012-03-19 | 2015-01-20 | Allegro Microsystems, Llc | Method and apparatus to detect a broken wire condition in an integrated circuit |
US9641070B2 (en) | 2014-06-11 | 2017-05-02 | Allegro Microsystems, Llc | Circuits and techniques for detecting an open pin condition of an integrated circuit |
US10001519B2 (en) | 2015-06-12 | 2018-06-19 | Allegro Microsystems, Llc | Ground reference fault detection in circuits with multiple ground references |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
US3534235A (en) * | 1967-04-17 | 1970-10-13 | Hughes Aircraft Co | Igfet with offset gate and biconductivity channel region |
US3533158A (en) * | 1967-10-30 | 1970-10-13 | Hughes Aircraft Co | Method of utilizing an ion beam to form custom circuits |
GB1214431A (en) * | 1968-02-03 | 1970-12-02 | Standard Elektrik Lorenz Ag | Method of protecting picture tubes against implosion |
NL6808352A (xx) * | 1968-06-14 | 1969-12-16 | ||
GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
US3588635A (en) | 1969-04-02 | 1971-06-28 | Rca Corp | Integrated circuit |
US4005450A (en) * | 1970-05-13 | 1977-01-25 | Hitachi, Ltd. | Insulated gate field effect transistor having drain region containing low impurity concentration layer |
BE788874A (fr) * | 1971-09-17 | 1973-01-02 | Western Electric Co | Module de circuit integre |
FR2215676B1 (xx) * | 1973-01-29 | 1977-04-22 | Cipel | |
US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
JPS5853521B2 (ja) * | 1974-11-15 | 1983-11-30 | ソニー株式会社 | デンリヨクゾウフクカイロ |
JPS5749448Y2 (xx) * | 1975-03-19 | 1982-10-29 | ||
US4058822A (en) * | 1975-05-30 | 1977-11-15 | Sharp Kabushiki Kaisha | High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof |
JPS5946107B2 (ja) * | 1975-06-04 | 1984-11-10 | 株式会社日立製作所 | Mis型半導体装置の製造法 |
JPS5211872A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor device |
US4028717A (en) * | 1975-09-22 | 1977-06-07 | Ibm Corporation | Field effect transistor having improved threshold stability |
JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
JPS53128251A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Source follwoer circuit |
-
1977
- 1977-04-15 JP JP4265177A patent/JPS53128281A/ja active Granted
-
1978
- 1978-03-01 US US05/882,625 patent/US4599576A/en not_active Expired - Lifetime
- 1978-03-24 FR FR7808644A patent/FR2399126A1/fr not_active Withdrawn
- 1978-04-14 NL NL7804028A patent/NL7804028A/xx not_active Application Discontinuation
- 1978-04-14 DE DE2816271A patent/DE2816271C2/de not_active Expired
- 1978-11-22 FR FR7832899A patent/FR2400260A1/fr not_active Withdrawn
- 1978-11-22 FR FR7832897A patent/FR2400259A1/fr not_active Withdrawn
- 1978-11-22 FR FR7832898A patent/FR2396412A1/fr not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4394674A (en) * | 1979-10-09 | 1983-07-19 | Nippon Electric Co., Ltd. | Insulated gate field effect transistor |
US4506279A (en) * | 1982-09-17 | 1985-03-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Metal-oxide-semiconductor device with bilayered source and drain |
Also Published As
Publication number | Publication date |
---|---|
US4599576A (en) | 1986-07-08 |
DE2816271C2 (de) | 1984-06-20 |
FR2396412A1 (xx) | 1979-01-26 |
FR2400260A1 (fr) | 1979-03-09 |
DE2816271A1 (de) | 1978-11-02 |
FR2399126A1 (fr) | 1979-02-23 |
JPS53128281A (en) | 1978-11-09 |
FR2400259A1 (fr) | 1979-03-09 |
JPS6159540B2 (xx) | 1986-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |