FR2373856A1 - Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge - Google Patents

Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge

Info

Publication number
FR2373856A1
FR2373856A1 FR7736289A FR7736289A FR2373856A1 FR 2373856 A1 FR2373856 A1 FR 2373856A1 FR 7736289 A FR7736289 A FR 7736289A FR 7736289 A FR7736289 A FR 7736289A FR 2373856 A1 FR2373856 A1 FR 2373856A1
Authority
FR
France
Prior art keywords
transfer device
load
differential linear
sharing input
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7736289A
Other languages
English (en)
Other versions
FR2373856B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2373856A1 publication Critical patent/FR2373856A1/fr
Application granted granted Critical
Publication of FR2373856B1 publication Critical patent/FR2373856B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76883—Three-Phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne des appareils semiconducteurs et, plus particulièrement, des dispositifs à charges couplées connus sous le nom de dispositifs à transfert de charges. L'invention réside dans l'utilisation d'un dispositif de transfert de charges à deux voies A et B comportant une structure d'entrée commune. Cette structure d'entrée comprend un circuit d'injection de la charge 24 et deux portes d'entrée GA et GB auxquelles est appliquée une tension de manière à diviser un paquet de charges en deux paquets complémentaires qui sont déplacés le long des deux voies. L'invention est applicable au dispositif de transfert de charges utilisé dans les lignes à retard.
FR7736289A 1976-12-08 1977-12-02 Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge Granted FR2373856A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74848576A 1976-12-08 1976-12-08

Publications (2)

Publication Number Publication Date
FR2373856A1 true FR2373856A1 (fr) 1978-07-07
FR2373856B1 FR2373856B1 (fr) 1983-02-04

Family

ID=25009646

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7736289A Granted FR2373856A1 (fr) 1976-12-08 1977-12-02 Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge

Country Status (8)

Country Link
JP (1) JPS5371578A (fr)
BE (1) BE861538A (fr)
CA (1) CA1105139A (fr)
DE (1) DE2753677A1 (fr)
ES (1) ES464864A1 (fr)
FR (1) FR2373856A1 (fr)
GB (1) GB1592480A (fr)
NL (1) NL7713544A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529191A (en) * 1978-08-24 1980-03-01 Nec Corp Charge coupld element

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2111771A1 (fr) * 1970-10-22 1972-06-09 Western Electric Co
US3760202A (en) * 1971-01-14 1973-09-18 Rca Corp Input circuits for charged-coupled circuits
US3814955A (en) * 1971-06-04 1974-06-04 Hitachi Ltd Charge coupled semiconductor element with noise cancellation
US3819953A (en) * 1972-11-22 1974-06-25 Gen Electric Differential bucket-brigade circuit
US3877056A (en) * 1973-01-02 1975-04-08 Texas Instruments Inc Charge transfer device signal processing system
US3876952A (en) * 1973-05-02 1975-04-08 Rca Corp Signal processing circuits for charge-transfer, image-sensing arrays
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge
US3969634A (en) * 1975-07-31 1976-07-13 Hughes Aircraft Company Bucket background subtraction circuit for charge-coupled devices
FR2308166A1 (fr) * 1975-04-18 1976-11-12 Western Electric Co Regenerateur de charge pour un dispositif semi-conducteur a transfert de charge
US4075514A (en) * 1976-12-06 1978-02-21 Bell Telephone Laboratories, Incorporated Sensing circuit for semiconductor charge transfer devices

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2111771A1 (fr) * 1970-10-22 1972-06-09 Western Electric Co
US3760202A (en) * 1971-01-14 1973-09-18 Rca Corp Input circuits for charged-coupled circuits
US3814955A (en) * 1971-06-04 1974-06-04 Hitachi Ltd Charge coupled semiconductor element with noise cancellation
US3819953A (en) * 1972-11-22 1974-06-25 Gen Electric Differential bucket-brigade circuit
US3877056A (en) * 1973-01-02 1975-04-08 Texas Instruments Inc Charge transfer device signal processing system
US3876952A (en) * 1973-05-02 1975-04-08 Rca Corp Signal processing circuits for charge-transfer, image-sensing arrays
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge
FR2308166A1 (fr) * 1975-04-18 1976-11-12 Western Electric Co Regenerateur de charge pour un dispositif semi-conducteur a transfert de charge
US3969634A (en) * 1975-07-31 1976-07-13 Hughes Aircraft Company Bucket background subtraction circuit for charge-coupled devices
US4075514A (en) * 1976-12-06 1978-02-21 Bell Telephone Laboratories, Incorporated Sensing circuit for semiconductor charge transfer devices
FR2373190A1 (fr) * 1976-12-06 1978-06-30 Western Electric Co Circuit de detection pour des dispositifs de transfert de charges a semiconducteur

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/76 *
EXBK/77 *

Also Published As

Publication number Publication date
BE861538A (fr) 1978-03-31
ES464864A1 (es) 1978-09-01
GB1592480A (en) 1981-07-08
DE2753677A1 (de) 1978-06-15
JPS5371578A (en) 1978-06-26
CA1105139A (fr) 1981-07-14
NL7713544A (nl) 1978-06-12
FR2373856B1 (fr) 1983-02-04

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Legal Events

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