FR2358783A2 - Amplificateur differentiel numerique pour des dispositifs a couplage direct de charge - Google Patents

Amplificateur differentiel numerique pour des dispositifs a couplage direct de charge

Info

Publication number
FR2358783A2
FR2358783A2 FR7720627A FR7720627A FR2358783A2 FR 2358783 A2 FR2358783 A2 FR 2358783A2 FR 7720627 A FR7720627 A FR 7720627A FR 7720627 A FR7720627 A FR 7720627A FR 2358783 A2 FR2358783 A2 FR 2358783A2
Authority
FR
France
Prior art keywords
differential amplifier
digital differential
coupling devices
load coupling
direct load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7720627A
Other languages
English (en)
Other versions
FR2358783B2 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2358783A2 publication Critical patent/FR2358783A2/fr
Application granted granted Critical
Publication of FR2358783B2 publication Critical patent/FR2358783B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un amplificateur différentiel numérique pour dispositifs à couplage direct de charge. Dans ce dispositif comportant des transistors 11 à 15, 20 à 23 ainsi que des capacités 16, 17, et deux puits de courant 18, 19, selon l'information appliquée au point d'entrée 152, la tension sur le condensateur 16 est modifiée ou non et une capacité de sortie de l'amplificateur est déchargée en fonction de la tension sur le premier condensateur, la bascule bistable formée des transistors 21, 22 réduisant le temps de commutation de l'amplificateur. Application notamment aux dispositifs à transfert de charge à couplage direct de charge.
FR7720627A 1974-01-25 1977-07-05 Amplificateur differentiel numerique pour des dispositifs a couplage direct de charge Granted FR2358783A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7402630A FR2258783B1 (fr) 1974-01-25 1974-01-25
DE19762631471 DE2631471A1 (de) 1974-01-25 1976-07-13 Digitaler differenzverstaerker fuer ccd-anordnungen

Publications (2)

Publication Number Publication Date
FR2358783A2 true FR2358783A2 (fr) 1978-02-10
FR2358783B2 FR2358783B2 (fr) 1982-11-12

Family

ID=25770691

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7402630A Expired FR2258783B1 (fr) 1974-01-25 1974-01-25
FR7720627A Granted FR2358783A2 (fr) 1974-01-25 1977-07-05 Amplificateur differentiel numerique pour des dispositifs a couplage direct de charge

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7402630A Expired FR2258783B1 (fr) 1974-01-25 1974-01-25

Country Status (7)

Country Link
US (1) US4134033A (fr)
JP (1) JPS5310231A (fr)
BE (1) BE856780R (fr)
DE (1) DE2631471A1 (fr)
FR (2) FR2258783B1 (fr)
GB (1) GB1587832A (fr)
NL (1) NL7707757A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2405006A1 (fr) * 1977-10-10 1979-05-04 Fontan Andre Machine a vendanger
DE2751881A1 (de) * 1977-11-21 1979-05-23 Siemens Ag Monolithische digitale halbleiterschaltung mit mehreren bipolartransistoren
FR2553606B1 (fr) * 1983-10-17 1989-10-13 Labo Cent Telecommunicat Dispositif pour ameliorer le fonctionnement aux frequences elevees des circuits integres logiques, en particulier de la famille ecl
US4668881A (en) * 1983-12-01 1987-05-26 Rca Corporation Sense circuit with presetting means
US5548238A (en) * 1993-10-01 1996-08-20 Cirrus Logic Inc. Low power high speed CMOS current switching circuit
AUPQ851200A0 (en) * 2000-07-03 2000-07-27 Degenhardt, Scott Lance Grape harvesting collection system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
US3801831A (en) * 1972-10-13 1974-04-02 Motorola Inc Voltage level shifting circuit
US3810124A (en) * 1972-06-30 1974-05-07 Ibm Memory accessing system
FR2221818A1 (fr) * 1973-03-14 1974-10-11 Rca Corp
US3891977A (en) * 1974-07-15 1975-06-24 Fairchild Camera Instr Co Charge coupled memory device
US3904888A (en) * 1974-05-17 1975-09-09 Rca Corp Circuits exhibiting hysteresis using transistors of complementary conductivity type

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
US3895360A (en) * 1974-01-29 1975-07-15 Westinghouse Electric Corp Block oriented random access memory
US4060737A (en) * 1974-08-22 1977-11-29 Texas Instruments Incorporated Charge coupled device shift registers having an improved regenerative charge detector
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
US3946368A (en) * 1974-12-27 1976-03-23 Intel Corporation System for compensating voltage for a CCD sensing circuit
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
DE2541686A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsgekoppelte elemente
DE2541721A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Digitaler differenzverstaerker fuer ccd-anordnungen
DE2602520B2 (de) * 1976-01-23 1978-02-02 Linearer ausgangsverstaerker fuer ladungsgekoppelte elemente

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
US3810124A (en) * 1972-06-30 1974-05-07 Ibm Memory accessing system
US3801831A (en) * 1972-10-13 1974-04-02 Motorola Inc Voltage level shifting circuit
FR2221818A1 (fr) * 1973-03-14 1974-10-11 Rca Corp
US3904888A (en) * 1974-05-17 1975-09-09 Rca Corp Circuits exhibiting hysteresis using transistors of complementary conductivity type
US3891977A (en) * 1974-07-15 1975-06-24 Fairchild Camera Instr Co Charge coupled memory device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV700/76 *

Also Published As

Publication number Publication date
FR2358783B2 (fr) 1982-11-12
FR2258783A1 (fr) 1975-08-22
FR2258783B1 (fr) 1977-09-16
JPS5310231A (en) 1978-01-30
US4134033A (en) 1979-01-09
BE856780R (fr) 1977-10-31
GB1587832A (en) 1981-04-08
DE2631471A1 (de) 1978-01-19
NL7707757A (nl) 1978-01-17

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