JPS5529191A - Charge coupld element - Google Patents

Charge coupld element

Info

Publication number
JPS5529191A
JPS5529191A JP10353378A JP10353378A JPS5529191A JP S5529191 A JPS5529191 A JP S5529191A JP 10353378 A JP10353378 A JP 10353378A JP 10353378 A JP10353378 A JP 10353378A JP S5529191 A JPS5529191 A JP S5529191A
Authority
JP
Japan
Prior art keywords
transfer
channel
region
channels
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10353378A
Other languages
Japanese (ja)
Other versions
JPS6316910B2 (en
Inventor
Ikuo Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10353378A priority Critical patent/JPS5529191A/en
Publication of JPS5529191A publication Critical patent/JPS5529191A/en
Publication of JPS6316910B2 publication Critical patent/JPS6316910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To correct variations in output voltage of a channel by dividing at least one input gate electrode of the voltage input part in the direction of transfer in the number corresponding to that of transfer channels and applying DC bias. CONSTITUTION:An input diode 11 is mounted on the conjuction end of a channel stopper region 42 provided in the U-shaped form. One region of the stopper region 42 is used as a transfer channel region A and the other region, as a transfer channel B. An input gate electrode 41a, one of the divided region, is provided on the channel A and the other input gate electrode 42b, on the channel B. Electrodes 3 and 4 are provided over the channels A and B in the direction of transfer, and electrodes 17 and 18 of the transfer channel are in the direction of transfer at the positions corresponding to the channels A and B. Similarly a plurality of transfer electrodes is provided. The bias voltage to be applied to the electrodes 41a and 41b is controlled by a variable resistance 44 and the output voltages of the channels A and B are made equal.
JP10353378A 1978-08-24 1978-08-24 Charge coupld element Granted JPS5529191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10353378A JPS5529191A (en) 1978-08-24 1978-08-24 Charge coupld element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10353378A JPS5529191A (en) 1978-08-24 1978-08-24 Charge coupld element

Publications (2)

Publication Number Publication Date
JPS5529191A true JPS5529191A (en) 1980-03-01
JPS6316910B2 JPS6316910B2 (en) 1988-04-11

Family

ID=14356502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10353378A Granted JPS5529191A (en) 1978-08-24 1978-08-24 Charge coupld element

Country Status (1)

Country Link
JP (1) JPS5529191A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293214A (en) * 1988-05-20 1989-11-27 Kayaba Ind Co Ltd Attitude control device
JPH0456504U (en) * 1990-09-21 1992-05-14

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345182A (en) * 1976-10-05 1978-04-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5371578A (en) * 1976-12-08 1978-06-26 Western Electric Co Charge transfer device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345182A (en) * 1976-10-05 1978-04-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5371578A (en) * 1976-12-08 1978-06-26 Western Electric Co Charge transfer device

Also Published As

Publication number Publication date
JPS6316910B2 (en) 1988-04-11

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