JPS5371578A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5371578A
JPS5371578A JP14666877A JP14666877A JPS5371578A JP S5371578 A JPS5371578 A JP S5371578A JP 14666877 A JP14666877 A JP 14666877A JP 14666877 A JP14666877 A JP 14666877A JP S5371578 A JPS5371578 A JP S5371578A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
charge
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14666877A
Other languages
English (en)
Japanese (ja)
Inventor
Erudon Kuroochiyaraa Ronarudo
Heinritsuchi Sekuin Karuro
Furanshisu Tonpusetsut Maikeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5371578A publication Critical patent/JPS5371578A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76883—Three-Phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
JP14666877A 1976-12-08 1977-12-08 Charge transfer device Pending JPS5371578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74848576A 1976-12-08 1976-12-08

Publications (1)

Publication Number Publication Date
JPS5371578A true JPS5371578A (en) 1978-06-26

Family

ID=25009646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14666877A Pending JPS5371578A (en) 1976-12-08 1977-12-08 Charge transfer device

Country Status (8)

Country Link
JP (1) JPS5371578A (fr)
BE (1) BE861538A (fr)
CA (1) CA1105139A (fr)
DE (1) DE2753677A1 (fr)
ES (1) ES464864A1 (fr)
FR (1) FR2373856A1 (fr)
GB (1) GB1592480A (fr)
NL (1) NL7713544A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529191A (en) * 1978-08-24 1980-03-01 Nec Corp Charge coupld element

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE35684B1 (en) * 1970-10-22 1976-04-28 Western Electric Co Improvements in or relating to charge transfer devices
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
JPS5214944B1 (fr) * 1971-06-04 1977-04-25
US3819953A (en) * 1972-11-22 1974-06-25 Gen Electric Differential bucket-brigade circuit
US3877056A (en) * 1973-01-02 1975-04-08 Texas Instruments Inc Charge transfer device signal processing system
US3876952A (en) * 1973-05-02 1975-04-08 Rca Corp Signal processing circuits for charge-transfer, image-sensing arrays
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
US3969634A (en) * 1975-07-31 1976-07-13 Hughes Aircraft Company Bucket background subtraction circuit for charge-coupled devices
US4075514A (en) * 1976-12-06 1978-02-21 Bell Telephone Laboratories, Incorporated Sensing circuit for semiconductor charge transfer devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529191A (en) * 1978-08-24 1980-03-01 Nec Corp Charge coupld element
JPS6316910B2 (fr) * 1978-08-24 1988-04-11 Nippon Electric Co

Also Published As

Publication number Publication date
ES464864A1 (es) 1978-09-01
FR2373856A1 (fr) 1978-07-07
NL7713544A (nl) 1978-06-12
CA1105139A (fr) 1981-07-14
GB1592480A (en) 1981-07-08
BE861538A (fr) 1978-03-31
DE2753677A1 (de) 1978-06-15
FR2373856B1 (fr) 1983-02-04

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