JPS57103468A - Image sensor - Google Patents

Image sensor

Info

Publication number
JPS57103468A
JPS57103468A JP55178033A JP17803380A JPS57103468A JP S57103468 A JPS57103468 A JP S57103468A JP 55178033 A JP55178033 A JP 55178033A JP 17803380 A JP17803380 A JP 17803380A JP S57103468 A JPS57103468 A JP S57103468A
Authority
JP
Japan
Prior art keywords
thin film
protruded
insulating layer
photodiode
common electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55178033A
Other languages
Japanese (ja)
Inventor
Hideo Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP55178033A priority Critical patent/JPS57103468A/en
Publication of JPS57103468A publication Critical patent/JPS57103468A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To improve the performance and the reliability, by providing an insulating layer between a component film protruded from a photo detecting part and a common electrode to reduce the leakage current in an unmagnification image sensor. CONSTITUTION:A component film of a thin film photodiode 8 is protruded from the photo detecting part to constitute a parallel capacitor part 10 for the purpose of making the equivalent capacity of the thin film photodiode 8, which is arranged on the same substrate 1, sufficiently larger than that of a thin film blocking diode 9, and an insulating layer 4 is provided between a common electrode 2 in the photo detection side of the thin film photodiode 9 and the protruded component film 5 to reduce the leakage current, thereby receiving a large optical signal output and restraining mixture of signals from other bits low. Even if pinholes exist somewhat in the insulating layer 4, it is hardly influenced.
JP55178033A 1980-12-18 1980-12-18 Image sensor Pending JPS57103468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55178033A JPS57103468A (en) 1980-12-18 1980-12-18 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55178033A JPS57103468A (en) 1980-12-18 1980-12-18 Image sensor

Publications (1)

Publication Number Publication Date
JPS57103468A true JPS57103468A (en) 1982-06-28

Family

ID=16041406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55178033A Pending JPS57103468A (en) 1980-12-18 1980-12-18 Image sensor

Country Status (1)

Country Link
JP (1) JPS57103468A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961067A (en) * 1982-09-29 1984-04-07 Toshiba Corp Image sensor
JPS60240285A (en) * 1984-05-04 1985-11-29 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Electronic radiation sensing device and method
EP0163956A2 (en) * 1984-05-04 1985-12-11 Energy Conversion Devices, Inc. Intergrated radiation sensing array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961067A (en) * 1982-09-29 1984-04-07 Toshiba Corp Image sensor
JPS6051274B2 (en) * 1982-09-29 1985-11-13 株式会社東芝 image sensor
JPS60240285A (en) * 1984-05-04 1985-11-29 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Electronic radiation sensing device and method
EP0163956A2 (en) * 1984-05-04 1985-12-11 Energy Conversion Devices, Inc. Intergrated radiation sensing array

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