ES464794A1 - Perfeccionamientos en dispositivos semiconductores de trans-ferencia de carga de electrodos divididos. - Google Patents

Perfeccionamientos en dispositivos semiconductores de trans-ferencia de carga de electrodos divididos.

Info

Publication number
ES464794A1
ES464794A1 ES464794A ES464794A ES464794A1 ES 464794 A1 ES464794 A1 ES 464794A1 ES 464794 A ES464794 A ES 464794A ES 464794 A ES464794 A ES 464794A ES 464794 A1 ES464794 A1 ES 464794A1
Authority
ES
Spain
Prior art keywords
output terminal
charge transfer
transfer devices
terminal
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES464794A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES464794A1 publication Critical patent/ES464794A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Amplifiers (AREA)

Abstract

Perfeccionamientos en dispositivos semiconductores de transferencia de carga de electrodos divididosdel tipo de dispositivos que tienen un primer y un segundo conjuntos de segmentos de electrodos de detecciónconectados el primer conjunto de electrodos de detección mutuamente a un primer terminal de salida de un dispositivo y el segundo conjunto de electrodos de detección conectados mutuamente a un segundo terminal de salida de un dispositivoacoplándose el primer y segundo terminales de dispositivo respectivamente al primer y segundo terminales de entrada de un amplificador de diferenciacaracterizados porque por lo menos el segundo terminal de salidas se conecta a un primer terminal de entrada de un amplificador separado que tiene un segundo terminal de entrada de polaridad opuesta para conectarse a una fuente de potencial fijo y que tiene un terminal de salida del amplificador acoplado a través de un primer y un segundo capacitadoresrespectivamentede capacitancia virtualmente igual al primer y segundo terminales de salida del dispositivo respectivamente.
ES464794A 1976-12-06 1977-12-06 Perfeccionamientos en dispositivos semiconductores de trans-ferencia de carga de electrodos divididos. Expired ES464794A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/747,900 US4075514A (en) 1976-12-06 1976-12-06 Sensing circuit for semiconductor charge transfer devices

Publications (1)

Publication Number Publication Date
ES464794A1 true ES464794A1 (es) 1978-09-01

Family

ID=25007156

Family Applications (1)

Application Number Title Priority Date Filing Date
ES464794A Expired ES464794A1 (es) 1976-12-06 1977-12-06 Perfeccionamientos en dispositivos semiconductores de trans-ferencia de carga de electrodos divididos.

Country Status (15)

Country Link
US (1) US4075514A (es)
JP (1) JPS5370772A (es)
BE (1) BE861441A (es)
CA (1) CA1111560A (es)
CH (1) CH623960A5 (es)
DE (1) DE2753358C3 (es)
DK (1) DK146020C (es)
ES (1) ES464794A1 (es)
FR (1) FR2373190A1 (es)
GB (1) GB1589320A (es)
HK (1) HK25184A (es)
IL (1) IL53497A (es)
IT (1) IT1088583B (es)
NL (1) NL7713143A (es)
SE (1) SE415066B (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1105139A (en) * 1976-12-08 1981-07-14 Ronald E. Crochiere Charge transfer device having linear differential charge-splitting input
US4126794A (en) * 1977-07-25 1978-11-21 Bell Telephone Laboratories, Incorporated Semiconductor charge coupled device with split electrode configuration
US4151429A (en) * 1977-10-03 1979-04-24 Northern Telecom Limited Differential charge sensing circuit for MOS devices
US4245199A (en) * 1978-05-11 1981-01-13 Bell Telephone Laboratories, Incorporated Semiconductor CCD transversal filter with controllable threshold level
JPS613779U (ja) * 1984-06-14 1986-01-10 日野自動車株式会社 自動車の車体
JPH0693765B2 (ja) * 1985-11-06 1994-11-16 キヤノン株式会社 撮像装置
JPS62156584U (es) * 1986-03-28 1987-10-05
US4814648A (en) * 1987-09-24 1989-03-21 Texas Instruments Incorporated Low 1/f noise amplifier for CCD imagers
US7576570B1 (en) * 2006-08-22 2009-08-18 Altera Corporation Signal amplitude detection circuitry without pattern dependencies for high-speed serial links

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3389340A (en) * 1964-09-30 1968-06-18 Robertshaw Controls Co Common mode rejection differential amplifier
NL7202070A (es) * 1972-02-17 1973-08-21
GB1436110A (en) * 1972-09-25 1976-05-19 Rca Corp Circuit for amplifying charge
US3969636A (en) * 1975-06-30 1976-07-13 General Electric Company Charge sensing circuit for charge transfer devices
US4071775A (en) * 1976-04-02 1978-01-31 Texas Instruments Incorporated Charge coupled differential amplifier for transversal filter

Also Published As

Publication number Publication date
IT1088583B (it) 1985-06-10
IL53497A (en) 1980-01-31
FR2373190B1 (es) 1980-08-22
FR2373190A1 (fr) 1978-06-30
DK541477A (da) 1978-06-07
GB1589320A (en) 1981-05-13
BE861441A (fr) 1978-03-31
DK146020C (da) 1983-12-12
CH623960A5 (es) 1981-06-30
JPS5636583B2 (es) 1981-08-25
JPS5370772A (en) 1978-06-23
IL53497A0 (en) 1978-01-31
NL7713143A (nl) 1978-06-08
DE2753358B2 (de) 1980-07-03
SE7713770L (sv) 1978-06-07
DK146020B (da) 1983-05-24
DE2753358A1 (de) 1978-06-08
HK25184A (en) 1984-03-30
DE2753358C3 (de) 1981-05-27
SE415066B (sv) 1980-09-01
CA1111560A (en) 1981-10-27
US4075514A (en) 1978-02-21

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