ES455732A1 - Perfeccionamientos introducidos en un preamplificador para deteccion de senales. - Google Patents
Perfeccionamientos introducidos en un preamplificador para deteccion de senales.Info
- Publication number
- ES455732A1 ES455732A1 ES455732A ES455732A ES455732A1 ES 455732 A1 ES455732 A1 ES 455732A1 ES 455732 A ES455732 A ES 455732A ES 455732 A ES455732 A ES 455732A ES 455732 A1 ES455732 A1 ES 455732A1
- Authority
- ES
- Spain
- Prior art keywords
- device operable
- cross
- sense amplifier
- electrode
- charge transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356069—Bistable circuits using additional transistors in the feedback circuit
- H03K3/356078—Bistable circuits using additional transistors in the feedback circuit with synchronous operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356086—Bistable circuits with additional means for controlling the main nodes
- H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation
Abstract
Perfeccionamientos introducidos en un preamplificador para detección de señales que comprende primeros y segundos dispositivos accionables por transferencia de carga, cada uno de los cuales tiene primeros y segundos electrodos portadores de corriente y un electrodo de control, estando dichos primeros y segundos dispositivos accionables, acoplados con señales de entrada que han de ser detectadas; medios para acoplar dicho segundo electrodo de dicho primer dispositivo accionable con dicho electrodo de dicho primer dispositivo accionable con dicho electrodo de control de dicho segundo dispositivo accionable en un primer modo; medios para acoplar dicho segundo electrodo de dicho segundo dispositivo accionable con dicho electrodo de control de dicho primer dispositivo accionable en un segundo nodo.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/656,677 US4039861A (en) | 1976-02-09 | 1976-02-09 | Cross-coupled charge transfer sense amplifier circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
ES455732A1 true ES455732A1 (es) | 1978-01-16 |
Family
ID=24634093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES455732A Expired ES455732A1 (es) | 1976-02-09 | 1977-02-08 | Perfeccionamientos introducidos en un preamplificador para deteccion de senales. |
Country Status (15)
Country | Link |
---|---|
US (1) | US4039861A (es) |
JP (1) | JPS5295935A (es) |
AT (1) | AT364995B (es) |
AU (1) | AU498566B2 (es) |
BR (1) | BR7700762A (es) |
CA (1) | CA1099347A (es) |
CH (1) | CH604319A5 (es) |
DE (1) | DE2700802C3 (es) |
ES (1) | ES455732A1 (es) |
FI (1) | FI770415A (es) |
FR (1) | FR2340598A1 (es) |
GB (1) | GB1567565A (es) |
IT (1) | IT1079566B (es) |
NL (1) | NL7700762A (es) |
SE (1) | SE416854B (es) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5922316B2 (ja) * | 1976-02-24 | 1984-05-25 | 株式会社東芝 | ダイナミツクメモリ装置 |
US4144590A (en) * | 1976-12-29 | 1979-03-13 | Texas Instruments Incorporated | Intermediate output buffer circuit for semiconductor memory device |
SU928405A1 (ru) * | 1976-08-05 | 1982-05-15 | Предприятие П/Я Р-6429 | Усилитель считывани дл интегрального запоминающего устройства |
JPS5938670B2 (ja) * | 1976-10-15 | 1984-09-18 | 日本電気株式会社 | 差信号増巾回路 |
US4130897A (en) * | 1977-08-03 | 1978-12-19 | Sperry Rand Corporation | MNOS FET memory retention characterization test circuit with enhanced sensitivity and power conservation |
US4170741A (en) * | 1978-03-13 | 1979-10-09 | Westinghouse Electric Corp. | High speed CMOS sense circuit for semiconductor memories |
US4286178A (en) * | 1978-06-12 | 1981-08-25 | Texas Instruments Incorporated | Sense amplifier with dual parallel driver transistors in MOS random access memory |
DE2839073C2 (de) * | 1978-09-07 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Dynamische Stromquelle für Halbleiterbausteine und ihre Verwendung |
US4321484A (en) * | 1979-02-28 | 1982-03-23 | International Business Machines Corporation | Field effect transistor multivibrator |
US4253163A (en) * | 1979-10-09 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Sense amplifier-detector circuit |
EP0078338B1 (de) * | 1981-10-30 | 1986-02-05 | Ibm Deutschland Gmbh | FET-Speicher |
JPS6050694A (ja) * | 1983-08-26 | 1985-03-20 | Mitsubishi Electric Corp | ダイナミツク・ランダム・アクセス・メモリ |
US4547685A (en) * | 1983-10-21 | 1985-10-15 | Advanced Micro Devices, Inc. | Sense amplifier circuit for semiconductor memories |
JPS61142591A (ja) * | 1984-12-13 | 1986-06-30 | Toshiba Corp | 半導体記憶装置 |
US4670675A (en) * | 1986-02-07 | 1987-06-02 | Advanced Micro Devices, Inc. | High gain sense amplifier for small current differential |
JPS62252597A (ja) * | 1986-04-24 | 1987-11-04 | Sony Corp | センスアンプ |
JPS6410493A (en) * | 1987-07-02 | 1989-01-13 | Mitsubishi Electric Corp | Charge transfer type sense amplifier |
NL8901376A (nl) * | 1989-05-31 | 1990-12-17 | Philips Nv | Geintegreerde geheugenschakeling met een leesversterker. |
US5270591A (en) * | 1992-02-28 | 1993-12-14 | Xerox Corporation | Content addressable memory architecture and circuits |
US6018253A (en) * | 1996-09-30 | 2000-01-25 | Advanced Micro Devices, Inc. | Register with current-steering input network |
US5828239A (en) * | 1997-04-14 | 1998-10-27 | International Business Machines Corporation | Sense amplifier circuit with minimized clock skew effect |
US10529410B2 (en) | 2017-12-18 | 2020-01-07 | Micron Technology, Inc. | Techniques for accessing an array of memory cells to reduce parasitic coupling |
US10762944B2 (en) * | 2017-12-18 | 2020-09-01 | Micron Technology, Inc. | Single plate configuration and memory array operation |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
US3882326A (en) * | 1973-12-26 | 1975-05-06 | Ibm | Differential amplifier for sensing small signals |
US3949381A (en) * | 1974-07-23 | 1976-04-06 | International Business Machines Corporation | Differential charge transfer sense amplifier |
-
1976
- 1976-02-09 US US05/656,677 patent/US4039861A/en not_active Expired - Lifetime
- 1976-12-23 FR FR7639692A patent/FR2340598A1/fr active Granted
-
1977
- 1977-01-05 CH CH656677A patent/CH604319A5/xx not_active IP Right Cessation
- 1977-01-11 DE DE2700802A patent/DE2700802C3/de not_active Expired
- 1977-01-13 AT AT0017477A patent/AT364995B/de not_active IP Right Cessation
- 1977-01-19 JP JP404477A patent/JPS5295935A/ja active Granted
- 1977-01-24 SE SE7700699A patent/SE416854B/xx unknown
- 1977-01-24 GB GB2825/77A patent/GB1567565A/en not_active Expired
- 1977-01-26 NL NL7700762A patent/NL7700762A/xx not_active Application Discontinuation
- 1977-01-28 AU AU21762/77A patent/AU498566B2/en not_active Expired
- 1977-02-03 CA CA271,023A patent/CA1099347A/en not_active Expired
- 1977-02-04 IT IT19961/77A patent/IT1079566B/it active
- 1977-02-07 BR BR7700762A patent/BR7700762A/pt unknown
- 1977-02-08 FI FI770415A patent/FI770415A/fi not_active Application Discontinuation
- 1977-02-08 ES ES455732A patent/ES455732A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE7700699L (sv) | 1977-08-10 |
IT1079566B (it) | 1985-05-13 |
BR7700762A (pt) | 1977-10-11 |
ATA17477A (de) | 1981-04-15 |
SE416854B (sv) | 1981-02-09 |
CA1099347A (en) | 1981-04-14 |
AT364995B (de) | 1981-11-25 |
DE2700802B2 (de) | 1978-06-15 |
CH604319A5 (es) | 1978-09-15 |
NL7700762A (nl) | 1977-08-11 |
FI770415A (es) | 1977-08-10 |
DE2700802A1 (de) | 1977-08-11 |
US4039861A (en) | 1977-08-02 |
FR2340598B1 (es) | 1979-09-21 |
AU2176277A (en) | 1978-08-03 |
FR2340598A1 (fr) | 1977-09-02 |
GB1567565A (en) | 1980-05-14 |
AU498566B2 (en) | 1979-03-15 |
JPS5295935A (en) | 1977-08-12 |
JPS57596B2 (es) | 1982-01-07 |
DE2700802C3 (de) | 1979-02-15 |
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