RO76120B - Dispozitiv semiconductor de memorie - Google Patents

Dispozitiv semiconductor de memorie

Info

Publication number
RO76120B
RO76120B RO93100A RO9310078A RO76120B RO 76120 B RO76120 B RO 76120B RO 93100 A RO93100 A RO 93100A RO 9310078 A RO9310078 A RO 9310078A RO 76120 B RO76120 B RO 76120B
Authority
RO
Romania
Prior art keywords
region
field effect
effect transistor
semiconductor body
conductivity type
Prior art date
Application number
RO93100A
Other languages
English (en)
Other versions
RO76120A (ro
Original Assignee
N.V.Philips Gloeilampenfabrieken
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by N.V.Philips Gloeilampenfabrieken filed Critical N.V.Philips Gloeilampenfabrieken
Publication of RO76120B publication Critical patent/RO76120B/ro
Publication of RO76120A publication Critical patent/RO76120A/ro

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)

Abstract

Inventia se refera la un dispozitiv semiconductor avînd un element de memorie adaptat utilizarii într-o memorie cu acces aleator. Dispozitivul, conform inventiei, contine o memorie cu acces aleator avînd un corp semiconductor care este prevazut catre suprafata cu un sistem de conductori de linii de cuvînt si linii de bit care, în zona de încrucisare, sunt cuplate electric cu elementele memoriei prevazute în regiunea suprafetei de baza a corpului semiconductor de un singur tip de conductivitate, fiecare cuprinzînd un tranzistor cu efect de cîmp, la care ne referim în cele de mai jos, tranzistor ce are doua regiuni de electrozi principali de un tip de conductivitate si o regiune de tranzitie a regiunii canalului de un tip de conductivitate cu o regiune a portii care este situata lînga suprafata si datorita careia poate fi formata în corpul semiconductorului, o regiune de saracire ce se extinde în regiunea canalului, care formeaza o regiune de înmagazinare de sarcina în care poate fi memorata informatia sub forma de sarcina electrica, informatie care poate fi citita nedistrucziv, liniile de bit fiind cuplate la regiunea primului electrod principal al tranzistorului cu efect de cîmp, iar liniile de cuvînt fiind legate la regiunea portii primului tranzistor cu efect de cîmp.
RO7893100A 1977-02-04 1978-02-04 Dispozitiv semiconductor de memorie RO76120A (ro)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7701172A NL7701172A (nl) 1977-02-04 1977-02-04 Halfgeleidergeheugeninrichting.

Publications (2)

Publication Number Publication Date
RO76120B true RO76120B (ro) 1983-05-30
RO76120A RO76120A (ro) 1983-06-01

Family

ID=19827917

Family Applications (1)

Application Number Title Priority Date Filing Date
RO7893100A RO76120A (ro) 1977-02-04 1978-02-04 Dispozitiv semiconductor de memorie

Country Status (14)

Country Link
US (1) US4161741A (ro)
JP (1) JPS5846064B2 (ro)
AU (1) AU512104B2 (ro)
BE (1) BE863591A (ro)
BR (1) BR7800627A (ro)
DD (1) DD137161A5 (ro)
DE (1) DE2804412C3 (ro)
ES (1) ES466564A1 (ro)
FR (1) FR2379877B1 (ro)
GB (1) GB1594562A (ro)
IT (1) IT1092499B (ro)
NL (1) NL7701172A (ro)
RO (1) RO76120A (ro)
SE (1) SE7801169L (ro)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1602361A (en) * 1977-02-21 1981-11-11 Zaidan Hojin Handotai Kenkyu Semiconductor memory devices
GB2060997A (en) * 1978-01-03 1981-05-07 Erb D M Stratified charge memory divide
JPS6037620B2 (ja) * 1979-12-11 1985-08-27 株式会社東芝 半導体記憶装置
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device
US4593453A (en) * 1982-06-01 1986-06-10 Rockwell International Corporation Two-level transistor structures and method utilizing minimal area therefor
US4609429A (en) * 1984-07-02 1986-09-02 International Business Machines Corporation Process for making a small dynamic memory cell structure
US4753897A (en) * 1986-03-14 1988-06-28 Motorola Inc. Method for providing contact separation in silicided devices using false gate
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
US7729149B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors

Also Published As

Publication number Publication date
DE2804412C3 (de) 1982-03-18
ES466564A1 (es) 1979-01-16
JPS5397384A (en) 1978-08-25
DD137161A5 (de) 1979-08-15
IT1092499B (it) 1985-07-12
GB1594562A (en) 1981-07-30
DE2804412B2 (de) 1981-06-19
JPS5846064B2 (ja) 1983-10-14
BR7800627A (pt) 1978-10-10
FR2379877A1 (fr) 1978-09-01
FR2379877B1 (fr) 1986-02-14
BE863591A (fr) 1978-08-02
SE7801169L (sv) 1978-08-05
AU3294578A (en) 1979-08-09
DE2804412A1 (de) 1978-08-10
RO76120A (ro) 1983-06-01
US4161741A (en) 1979-07-17
NL7701172A (nl) 1978-08-08
IT7819890A0 (it) 1978-02-01
AU512104B2 (en) 1980-09-25

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