RO76120A - Dispozitiv semiconductor de memorie - Google Patents
Dispozitiv semiconductor de memorieInfo
- Publication number
- RO76120A RO76120A RO7893100A RO9310078A RO76120A RO 76120 A RO76120 A RO 76120A RO 7893100 A RO7893100 A RO 7893100A RO 9310078 A RO9310078 A RO 9310078A RO 76120 A RO76120 A RO 76120A
- Authority
- RO
- Romania
- Prior art keywords
- semiconductor device
- memory semiconductor
- memory
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7701172A NL7701172A (nl) | 1977-02-04 | 1977-02-04 | Halfgeleidergeheugeninrichting. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO76120B RO76120B (ro) | 1983-05-30 |
| RO76120A true RO76120A (ro) | 1983-06-01 |
Family
ID=19827917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO7893100A RO76120A (ro) | 1977-02-04 | 1978-02-04 | Dispozitiv semiconductor de memorie |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US4161741A (ro) |
| JP (1) | JPS5846064B2 (ro) |
| AU (1) | AU512104B2 (ro) |
| BE (1) | BE863591A (ro) |
| BR (1) | BR7800627A (ro) |
| DD (1) | DD137161A5 (ro) |
| DE (1) | DE2804412C3 (ro) |
| ES (1) | ES466564A1 (ro) |
| FR (1) | FR2379877B1 (ro) |
| GB (1) | GB1594562A (ro) |
| IT (1) | IT1092499B (ro) |
| NL (1) | NL7701172A (ro) |
| RO (1) | RO76120A (ro) |
| SE (1) | SE7801169L (ro) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1602361A (en) * | 1977-02-21 | 1981-11-11 | Zaidan Hojin Handotai Kenkyu | Semiconductor memory devices |
| WO1979000474A1 (en) * | 1978-01-03 | 1979-07-26 | D Erb | A stratified charge memory device |
| JPS6037620B2 (ja) * | 1979-12-11 | 1985-08-27 | 株式会社東芝 | 半導体記憶装置 |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| CA1164562A (en) * | 1980-10-08 | 1984-03-27 | Manabu Itsumi | Semiconductor memory device |
| US4593453A (en) * | 1982-06-01 | 1986-06-10 | Rockwell International Corporation | Two-level transistor structures and method utilizing minimal area therefor |
| US4609429A (en) * | 1984-07-02 | 1986-09-02 | International Business Machines Corporation | Process for making a small dynamic memory cell structure |
| US4908688A (en) * | 1986-03-14 | 1990-03-13 | Motorola, Inc. | Means and method for providing contact separation in silicided devices |
| US4753897A (en) * | 1986-03-14 | 1988-06-28 | Motorola Inc. | Method for providing contact separation in silicided devices using false gate |
| GB9115699D0 (en) * | 1991-07-19 | 1991-09-04 | Philips Electronic Associated | An overvoltage protected semiconductor switch |
| US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4075045A (en) * | 1976-02-09 | 1978-02-21 | International Business Machines Corporation | Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps |
| US4063274A (en) * | 1976-12-10 | 1977-12-13 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
-
1977
- 1977-02-04 NL NL7701172A patent/NL7701172A/xx not_active Application Discontinuation
- 1977-07-11 US US05/814,650 patent/US4161741A/en not_active Expired - Lifetime
-
1978
- 1978-02-01 IT IT19890/78A patent/IT1092499B/it active
- 1978-02-01 BR BR7800627A patent/BR7800627A/pt unknown
- 1978-02-01 SE SE7801169A patent/SE7801169L/xx unknown
- 1978-02-01 DD DD78203514A patent/DD137161A5/xx unknown
- 1978-02-01 GB GB4035/78A patent/GB1594562A/en not_active Expired
- 1978-02-02 ES ES466564A patent/ES466564A1/es not_active Expired
- 1978-02-02 DE DE2804412A patent/DE2804412C3/de not_active Expired
- 1978-02-02 AU AU32945/78A patent/AU512104B2/en not_active Expired
- 1978-02-02 BE BE184857A patent/BE863591A/xx unknown
- 1978-02-03 JP JP53010642A patent/JPS5846064B2/ja not_active Expired
- 1978-02-04 RO RO7893100A patent/RO76120A/ro unknown
- 1978-02-06 FR FR7803218A patent/FR2379877B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AU3294578A (en) | 1979-08-09 |
| NL7701172A (nl) | 1978-08-08 |
| DD137161A5 (de) | 1979-08-15 |
| IT7819890A0 (it) | 1978-02-01 |
| FR2379877B1 (fr) | 1986-02-14 |
| DE2804412C3 (de) | 1982-03-18 |
| IT1092499B (it) | 1985-07-12 |
| US4161741A (en) | 1979-07-17 |
| SE7801169L (sv) | 1978-08-05 |
| ES466564A1 (es) | 1979-01-16 |
| BE863591A (fr) | 1978-08-02 |
| BR7800627A (pt) | 1978-10-10 |
| DE2804412A1 (de) | 1978-08-10 |
| JPS5846064B2 (ja) | 1983-10-14 |
| DE2804412B2 (de) | 1981-06-19 |
| FR2379877A1 (fr) | 1978-09-01 |
| GB1594562A (en) | 1981-07-30 |
| AU512104B2 (en) | 1980-09-25 |
| RO76120B (ro) | 1983-05-30 |
| JPS5397384A (en) | 1978-08-25 |
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