US4292384A
(en)
*
|
1977-09-30 |
1981-09-29 |
Horizons Research Incorporated |
Gaseous plasma developing and etching process employing low voltage DC generation
|
US4180404A
(en)
*
|
1977-11-17 |
1979-12-25 |
Asahi Kasei Kogyo Kabushiki Kaisha |
Heat resistant photoresist composition and process for preparing the same
|
US4326018A
(en)
*
|
1977-12-12 |
1982-04-20 |
Polychrome Corporation |
Lithographic printing plate
|
US4208477A
(en)
*
|
1977-12-26 |
1980-06-17 |
Asahi Kasei Kogyo Kabushiki Kaisha |
Heat resistant photoresist composition and process for preparing the same
|
US4268602A
(en)
*
|
1978-12-05 |
1981-05-19 |
Toray Industries, Ltd. |
Photosensitive O-quinone diazide containing composition
|
US4289573A
(en)
*
|
1979-03-30 |
1981-09-15 |
International Business Machines Corporation |
Process for forming microcircuits
|
US4339522A
(en)
*
|
1979-06-18 |
1982-07-13 |
International Business Machines Corporation |
Ultra-violet lithographic resist composition and process
|
JPS5622428A
(en)
*
|
1979-08-01 |
1981-03-03 |
Toray Ind Inc |
Polyimide pattern forming method
|
DE2931297A1
(de)
*
|
1979-08-01 |
1981-02-19 |
Siemens Ag |
Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
|
US4284706A
(en)
*
|
1979-12-03 |
1981-08-18 |
International Business Machines Corporation |
Lithographic resist composition for a lift-off process
|
US4410612A
(en)
*
|
1980-09-03 |
1983-10-18 |
E. I. Du Pont De Nemours And Company |
Electrical device formed from polymeric heat resistant photopolymerizable composition
|
US4369247A
(en)
*
|
1980-09-03 |
1983-01-18 |
E. I. Du Pont De Nemours And Company |
Process of producing relief structures using polyamide ester resins
|
US4414312A
(en)
*
|
1980-09-03 |
1983-11-08 |
E. I. Du Pont De Nemours & Co. |
Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger
|
US4329419A
(en)
*
|
1980-09-03 |
1982-05-11 |
E. I. Du Pont De Nemours And Company |
Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
|
DE3110632A1
(de)
*
|
1981-03-19 |
1982-09-30 |
Hoechst Ag, 6000 Frankfurt |
Verfahren zum einbrennen von lichtempflindlichen schichten bei der herstellung von druckformen
|
JPS57168942A
(en)
*
|
1981-04-13 |
1982-10-18 |
Hitachi Ltd |
Photosensitive polymer composition
|
US4476216A
(en)
*
|
1981-08-03 |
1984-10-09 |
Amdahl Corporation |
Method for high resolution lithography
|
US4439516A
(en)
*
|
1982-03-15 |
1984-03-27 |
Shipley Company Inc. |
High temperature positive diazo photoresist processing using polyvinyl phenol
|
JPS58223149A
(ja)
*
|
1982-06-22 |
1983-12-24 |
Toray Ind Inc |
感光性ポリイミド用現像液
|
JPS59100135A
(ja)
*
|
1982-11-30 |
1984-06-09 |
Japan Synthetic Rubber Co Ltd |
樹脂組成物
|
US4857435A
(en)
*
|
1983-11-01 |
1989-08-15 |
Hoechst Celanese Corporation |
Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
|
US5059513A
(en)
*
|
1983-11-01 |
1991-10-22 |
Hoechst Celanese Corporation |
Photochemical image process of positive photoresist element with maleimide copolymer
|
JPS60169852A
(ja)
*
|
1984-02-14 |
1985-09-03 |
Fuji Photo Film Co Ltd |
湿し水不要ネガ型感光性平版印刷版の製版法
|
US4745045A
(en)
*
|
1985-03-11 |
1988-05-17 |
International Business Machines Corporation |
Method for improving resolution in microelectronic circuits using photoresist overlayer by using thermally processed polyimide underlayer formed from positive photoresist and polyamic acid
|
CA1255142A
(fr)
*
|
1985-03-11 |
1989-06-06 |
Edward C. Fredericks |
Methode et compose pour accroitre la definition des conducteurs dans les circuits microelectroniques
|
US4942108A
(en)
*
|
1985-12-05 |
1990-07-17 |
International Business Machines Corporation |
Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
|
DE3683464D1
(de)
*
|
1985-12-05 |
1992-02-27 |
Ibm |
Photoresistzusammensetzungen mit vermindertem loesungsgrad in basischen entwicklern, auf basis von durch diazochinon sensibilisierter polyamidsaeure.
|
CA1308596C
(fr)
*
|
1986-01-13 |
1992-10-13 |
Rohm And Haas Company |
Structure microplastique et methode de fabrication correspondante
|
US4720445A
(en)
*
|
1986-02-18 |
1988-01-19 |
Allied Corporation |
Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
|
JPH0721642B2
(ja)
*
|
1986-06-19 |
1995-03-08 |
宇部興産株式会社 |
感光性ポリイミドのパタ−ン形成方法
|
JPH0644154B2
(ja)
*
|
1986-07-03 |
1994-06-08 |
宇部興産株式会社 |
有機溶媒可溶性のポジ型感光性ポリイミド組成物
|
US5021320A
(en)
*
|
1986-10-02 |
1991-06-04 |
Hoechst Celanese Corporation |
Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist
|
ATE67611T1
(de)
*
|
1986-10-02 |
1991-10-15 |
Hoechst Celanese Corp |
Polyamide mit hexafluorisopropyliden-gruppen, diese enthaltende positiv arbeitende lichtempfindliche gemische und damit hergestellte aufzeichnungsmaterialien.
|
US5077378A
(en)
*
|
1986-10-02 |
1991-12-31 |
Hoechst Celanese Corporation |
Polyamide containing the hexafluoroisopropylidene group
|
EP0291779B1
(fr)
*
|
1987-05-18 |
1994-07-27 |
Siemens Aktiengesellschaft |
Réserves positives résistantes à la chaleur et procédé de fabrication de structures formant réserve résistantes à la chaleur
|
US5037720A
(en)
*
|
1987-07-21 |
1991-08-06 |
Hoechst Celanese Corporation |
Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
|
DE3835737A1
(de)
*
|
1988-10-20 |
1990-04-26 |
Ciba Geigy Ag |
Positiv-fotoresists mit erhoehter thermischer stabilitaet
|
DE3837612A1
(de)
*
|
1988-11-05 |
1990-05-23 |
Ciba Geigy Ag |
Positiv-fotoresists von polyimid-typ
|
US5024922A
(en)
*
|
1988-11-07 |
1991-06-18 |
Moss Mary G |
Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
|
EP0478321B1
(fr)
*
|
1990-09-28 |
1997-11-12 |
Kabushiki Kaisha Toshiba |
Composition résineuse photosensible pour la structuration d'un film de polyimide et méthode pour structurer un film de polyimide
|
JP2890213B2
(ja)
*
|
1991-02-25 |
1999-05-10 |
チッソ株式会社 |
感光性重合体組成物及びパターンの形成方法
|
JP3677191B2
(ja)
|
1999-03-15 |
2005-07-27 |
株式会社東芝 |
感光性ポリイミド用現像液、ポリイミド膜パターン形成方法、及び電子部品
|
JP4529252B2
(ja)
|
1999-09-28 |
2010-08-25 |
日立化成デュポンマイクロシステムズ株式会社 |
ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
|
KR100422971B1
(ko)
|
1999-12-29 |
2004-03-12 |
삼성전자주식회사 |
나프톨 구조를 가진 이온형 광산발생제 및 이를 이용한감광성 폴리이미드 조성물
|
JP3773845B2
(ja)
|
2000-12-29 |
2006-05-10 |
三星電子株式会社 |
ポジティブ型感光性ポリイミド前駆体およびこれを含む組成物
|
KR100532590B1
(ko)
*
|
2002-11-07 |
2005-12-01 |
삼성전자주식회사 |
감광성 폴리이미드 전구체용 가용성 폴리이미드 및, 이를포함하는 감광성 폴리이드 전구체 조성물
|
US7638254B2
(en)
|
2004-05-07 |
2009-12-29 |
Hitachi Chemical Dupont Microsystems Ltd |
Positive photosensitive resin composition, method for forming pattern, and electronic part
|
JP4775261B2
(ja)
|
2004-05-07 |
2011-09-21 |
日立化成デュポンマイクロシステムズ株式会社 |
ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
|
US8871422B2
(en)
*
|
2005-09-22 |
2014-10-28 |
Hitachi Chemical Dupont Microsystems Ltd. |
Negative-type photosensitive resin composition, pattern forming method and electronic parts
|
WO2007119384A1
(fr)
|
2006-03-16 |
2007-10-25 |
Asahi Glass Company, Limited |
Composition de résine aromatique fluorée photosensible de type négatif
|
JP5123846B2
(ja)
*
|
2006-04-28 |
2013-01-23 |
旭化成イーマテリアルズ株式会社 |
感光性樹脂組成物及び感光性フィルム
|
KR101025395B1
(ko)
*
|
2006-06-20 |
2011-03-28 |
히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 |
네거티브형 감광성 수지 조성물, 패턴의 제조방법 및 전자부품
|
KR101438857B1
(ko)
*
|
2007-03-12 |
2014-09-05 |
히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 |
감광성 수지 조성물, 그 수지 조성물을 이용한 패턴 경화막의 제조방법 및 전자부품
|
TWI439811B
(zh)
*
|
2007-10-29 |
2014-06-01 |
Hitachi Chem Dupont Microsys |
正型感光性樹脂組成物、圖案的製造方法以及電子零件
|
WO2009123122A1
(fr)
*
|
2008-03-31 |
2009-10-08 |
大日本印刷株式会社 |
Agent générateur de base, composition de résine photosensible, matériau formant motifs contenant la composition de résine photosensible, procédé de formation de motifs au moyen de la composition de résine photosensible, et article
|
US8071273B2
(en)
*
|
2008-03-31 |
2011-12-06 |
Dai Nippon Printing Co., Ltd. |
Polyimide precursor, resin composition comprising the polyimide precursor, pattern forming method using the resin composition, and articles produced by using the resin composition
|
US9274438B1
(en)
*
|
2008-06-25 |
2016-03-01 |
Western Digital (Fremont), Llc |
Method and system for exposing photoresist in a microelectric device
|
WO2010113813A1
(fr)
|
2009-03-31 |
2010-10-07 |
大日本印刷株式会社 |
Agent de génération de base, composition de résine photosensible, matériau de formation de motifs comprenant la composition de résine photosensible, procédé de formation de motifs et article utilisant la composition de résine photosensible
|
CN102713753A
(zh)
|
2010-01-21 |
2012-10-03 |
日立化成杜邦微系统股份有限公司 |
正型感光性树脂组合物、图形固化膜的制造方法以及电子部件
|
US9519221B2
(en)
*
|
2014-01-13 |
2016-12-13 |
Applied Materials, Inc. |
Method for microwave processing of photosensitive polyimides
|
KR101580898B1
(ko)
|
2014-04-18 |
2015-12-31 |
(주)휴넷플러스 |
폴리실세스퀴옥산 공중합체 및 이를 포함하는 감광성 수지 조성물
|
KR102597875B1
(ko)
|
2015-03-16 |
2023-11-03 |
다이요 홀딩스 가부시키가이샤 |
포지티브형 감광성 수지 조성물, 드라이 필름, 경화물 및 프린트 배선판
|
KR102071112B1
(ko)
|
2017-10-11 |
2020-01-29 |
타코마테크놀러지 주식회사 |
바인더 수지 및 이를 포함하는 감광성 수지 조성물 또는 코팅 용액
|
JP7233189B2
(ja)
|
2018-09-21 |
2023-03-06 |
太陽ホールディングス株式会社 |
感光性樹脂組成物、ドライフィルム、硬化物および電子部品
|
JP2021092758A
(ja)
|
2019-12-03 |
2021-06-17 |
東京応化工業株式会社 |
ネガ型感光性樹脂組成物及び硬化膜の製造方法
|
JP2022175020A
(ja)
|
2021-05-12 |
2022-11-25 |
東京応化工業株式会社 |
感光性樹脂、ネガ型感光性樹脂組成物、パターン化された硬化膜の製造方法及びカルボキシ基含有樹脂
|