FR2317680A1 - Photo-reserves thermiquement stables et positives - Google Patents

Photo-reserves thermiquement stables et positives

Info

Publication number
FR2317680A1
FR2317680A1 FR7615556A FR7615556A FR2317680A1 FR 2317680 A1 FR2317680 A1 FR 2317680A1 FR 7615556 A FR7615556 A FR 7615556A FR 7615556 A FR7615556 A FR 7615556A FR 2317680 A1 FR2317680 A1 FR 2317680A1
Authority
FR
France
Prior art keywords
reserves
thermally stable
positive photo
photo
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615556A
Other languages
English (en)
Other versions
FR2317680B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GAF Corp
Original Assignee
GAF Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GAF Corp filed Critical GAF Corp
Publication of FR2317680A1 publication Critical patent/FR2317680A1/fr
Application granted granted Critical
Publication of FR2317680B1 publication Critical patent/FR2317680B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR7615556A 1975-07-18 1976-05-21 Photo-reserves thermiquement stables et positives Expired FR2317680B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/597,226 US4093461A (en) 1975-07-18 1975-07-18 Positive working thermally stable photoresist composition, article and method of using

Publications (2)

Publication Number Publication Date
FR2317680A1 true FR2317680A1 (fr) 1977-02-04
FR2317680B1 FR2317680B1 (fr) 1981-08-07

Family

ID=24390630

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615556A Expired FR2317680B1 (fr) 1975-07-18 1976-05-21 Photo-reserves thermiquement stables et positives

Country Status (9)

Country Link
US (1) US4093461A (fr)
JP (1) JPS5213315A (fr)
CA (1) CA1063416A (fr)
CH (1) CH619055A5 (fr)
DE (1) DE2631535A1 (fr)
FR (1) FR2317680B1 (fr)
GB (1) GB1548583A (fr)
IT (1) IT1060035B (fr)
NL (1) NL164975C (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264678A1 (fr) * 1986-10-02 1988-04-27 Hoechst Celanese Corporation Polyamides contenant des groupes hexafluoroisopropylène, compositions photosensibles positives les contenant et matériaux d'enregistrement les utilisant
EP0291779A2 (fr) * 1987-05-18 1988-11-23 Siemens Aktiengesellschaft Réserves positives résistantes à la chaleur et procédé de fabrication de structures formant réserve résistantes à la chaleur
EP0368800A2 (fr) * 1988-11-05 1990-05-16 Ciba-Geigy Ag Photoréserve positive du genre polyimide
EP0478321A1 (fr) * 1990-09-28 1992-04-01 Kabushiki Kaisha Toshiba Composition résineuse photosensible pour la structuration d'un film de polyimide et méthode pour structurer un film de polyimide

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4180404A (en) * 1977-11-17 1979-12-25 Asahi Kasei Kogyo Kabushiki Kaisha Heat resistant photoresist composition and process for preparing the same
US4326018A (en) * 1977-12-12 1982-04-20 Polychrome Corporation Lithographic printing plate
US4208477A (en) * 1977-12-26 1980-06-17 Asahi Kasei Kogyo Kabushiki Kaisha Heat resistant photoresist composition and process for preparing the same
US4268602A (en) * 1978-12-05 1981-05-19 Toray Industries, Ltd. Photosensitive O-quinone diazide containing composition
US4289573A (en) * 1979-03-30 1981-09-15 International Business Machines Corporation Process for forming microcircuits
US4339522A (en) * 1979-06-18 1982-07-13 International Business Machines Corporation Ultra-violet lithographic resist composition and process
DE2931297A1 (de) * 1979-08-01 1981-02-19 Siemens Ag Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
JPS5622428A (en) * 1979-08-01 1981-03-03 Toray Ind Inc Polyimide pattern forming method
US4284706A (en) * 1979-12-03 1981-08-18 International Business Machines Corporation Lithographic resist composition for a lift-off process
US4410612A (en) * 1980-09-03 1983-10-18 E. I. Du Pont De Nemours And Company Electrical device formed from polymeric heat resistant photopolymerizable composition
US4369247A (en) * 1980-09-03 1983-01-18 E. I. Du Pont De Nemours And Company Process of producing relief structures using polyamide ester resins
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4414312A (en) * 1980-09-03 1983-11-08 E. I. Du Pont De Nemours & Co. Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger
DE3110632A1 (de) * 1981-03-19 1982-09-30 Hoechst Ag, 6000 Frankfurt Verfahren zum einbrennen von lichtempflindlichen schichten bei der herstellung von druckformen
JPS57168942A (en) * 1981-04-13 1982-10-18 Hitachi Ltd Photosensitive polymer composition
US4476216A (en) * 1981-08-03 1984-10-09 Amdahl Corporation Method for high resolution lithography
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS58223149A (ja) * 1982-06-22 1983-12-24 Toray Ind Inc 感光性ポリイミド用現像液
JPS59100135A (ja) * 1982-11-30 1984-06-09 Japan Synthetic Rubber Co Ltd 樹脂組成物
US5059513A (en) * 1983-11-01 1991-10-22 Hoechst Celanese Corporation Photochemical image process of positive photoresist element with maleimide copolymer
US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
JPS60169852A (ja) * 1984-02-14 1985-09-03 Fuji Photo Film Co Ltd 湿し水不要ネガ型感光性平版印刷版の製版法
CA1255142A (fr) * 1985-03-11 1989-06-06 Edward C. Fredericks Methode et compose pour accroitre la definition des conducteurs dans les circuits microelectroniques
US4745045A (en) * 1985-03-11 1988-05-17 International Business Machines Corporation Method for improving resolution in microelectronic circuits using photoresist overlayer by using thermally processed polyimide underlayer formed from positive photoresist and polyamic acid
US4942108A (en) * 1985-12-05 1990-07-17 International Business Machines Corporation Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
EP0224680B1 (fr) * 1985-12-05 1992-01-15 International Business Machines Corporation Compositions photoréserves à base de quinonediazides sensibilisées par des acides polyamides ayant un taux de dissolution réduit dans les révélateurs basiques
CA1308596C (fr) * 1986-01-13 1992-10-13 Rohm And Haas Company Structure microplastique et methode de fabrication correspondante
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
JPH0721642B2 (ja) * 1986-06-19 1995-03-08 宇部興産株式会社 感光性ポリイミドのパタ−ン形成方法
JPH0644154B2 (ja) * 1986-07-03 1994-06-08 宇部興産株式会社 有機溶媒可溶性のポジ型感光性ポリイミド組成物
US5021320A (en) * 1986-10-02 1991-06-04 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist
US5077378A (en) * 1986-10-02 1991-12-31 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group
US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
DE3835737A1 (de) * 1988-10-20 1990-04-26 Ciba Geigy Ag Positiv-fotoresists mit erhoehter thermischer stabilitaet
US5024922A (en) * 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
JP2890213B2 (ja) * 1991-02-25 1999-05-10 チッソ株式会社 感光性重合体組成物及びパターンの形成方法
JP3677191B2 (ja) 1999-03-15 2005-07-27 株式会社東芝 感光性ポリイミド用現像液、ポリイミド膜パターン形成方法、及び電子部品
JP4529252B2 (ja) 1999-09-28 2010-08-25 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
KR100422971B1 (ko) 1999-12-29 2004-03-12 삼성전자주식회사 나프톨 구조를 가진 이온형 광산발생제 및 이를 이용한감광성 폴리이미드 조성물
JP3773845B2 (ja) 2000-12-29 2006-05-10 三星電子株式会社 ポジティブ型感光性ポリイミド前駆体およびこれを含む組成物
KR100532590B1 (ko) * 2002-11-07 2005-12-01 삼성전자주식회사 감광성 폴리이미드 전구체용 가용성 폴리이미드 및, 이를포함하는 감광성 폴리이드 전구체 조성물
US7638254B2 (en) 2004-05-07 2009-12-29 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for forming pattern, and electronic part
WO2005109099A1 (fr) 2004-05-07 2005-11-17 Hitachi Chemical Dupont Microsystems Ltd. Composition de résine photosensible positive, procédé de formation d’un motif, et composant électronique
TWI407255B (zh) * 2005-09-22 2013-09-01 Hitachi Chem Dupont Microsys 負片型感光性樹脂組成物、圖案形成方法以及電子零件
KR20080104308A (ko) * 2006-03-16 2008-12-02 아사히 가라스 가부시키가이샤 네거티브형 감광성 함불소 방향족계 수지 조성물
KR100995620B1 (ko) * 2006-04-28 2010-11-22 아사히 가세이 가부시키가이샤 감광성 수지 조성물 및 감광성 필름
US20100159217A1 (en) * 2006-06-20 2010-06-24 Hitachi Chemical Dupont Microsystems, Ltd Negative-type photosensitive resin composition, method for forming patterns, and electronic parts
KR101438857B1 (ko) * 2007-03-12 2014-09-05 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 감광성 수지 조성물, 그 수지 조성물을 이용한 패턴 경화막의 제조방법 및 전자부품
JP5176872B2 (ja) * 2007-10-29 2013-04-03 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パタ−ンの製造方法及び電子部品
US8071273B2 (en) * 2008-03-31 2011-12-06 Dai Nippon Printing Co., Ltd. Polyimide precursor, resin composition comprising the polyimide precursor, pattern forming method using the resin composition, and articles produced by using the resin composition
KR101552464B1 (ko) * 2008-03-31 2015-09-10 다이니폰 인사츠 가부시키가이샤 염기 발생제, 감광성 수지 조성물, 당해 감광성 수지 조성물을 포함하는 패턴 형성용 재료, 당해 감광성 수지 조성물을 사용한 패턴 형성 방법 및 물품
US9274438B1 (en) * 2008-06-25 2016-03-01 Western Digital (Fremont), Llc Method and system for exposing photoresist in a microelectric device
CN102365341B (zh) 2009-03-31 2014-12-31 大日本印刷株式会社 碱产生剂、感光性树脂组合物、含有该感光性树脂组合物的图案形成用材料、使用该感光性树脂组合物的图案形成方法以及物品
WO2011089877A1 (fr) 2010-01-21 2011-07-28 日立化成デュポンマイクロシステムズ株式会社 Composition de résine photosensible positive, procédé de fabrication d'un film durci formant un motif et composant électronique
US9519221B2 (en) * 2014-01-13 2016-12-13 Applied Materials, Inc. Method for microwave processing of photosensitive polyimides
TWI534182B (zh) 2014-04-18 2016-05-21 胡網加成股份有限公司 聚矽倍半氧烷共聚物及包含該共聚物之光敏樹脂
JP6810024B2 (ja) 2015-03-16 2021-01-06 太陽ホールディングス株式会社 ポジ型感光性樹脂組成物、ドライフィルム、硬化物およびプリント配線板
KR102071112B1 (ko) 2017-10-11 2020-01-29 타코마테크놀러지 주식회사 바인더 수지 및 이를 포함하는 감광성 수지 조성물 또는 코팅 용액
JP7233189B2 (ja) 2018-09-21 2023-03-06 太陽ホールディングス株式会社 感光性樹脂組成物、ドライフィルム、硬化物および電子部品
JP2021092758A (ja) 2019-12-03 2021-06-17 東京応化工業株式会社 ネガ型感光性樹脂組成物及び硬化膜の製造方法
JP2022175020A (ja) 2021-05-12 2022-11-25 東京応化工業株式会社 感光性樹脂、ネガ型感光性樹脂組成物、パターン化された硬化膜の製造方法及びカルボキシ基含有樹脂

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NL230139A (fr) * 1957-08-03
NL247939A (fr) * 1959-02-04
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
GB1116674A (en) * 1966-02-28 1968-06-12 Agfa Gevaert Nv Naphthoquinone diazide sulphofluoride
US3551154A (en) * 1966-12-28 1970-12-29 Ferrania Spa Light sensitive article comprising a quinone diazide and polymeric binder
US3802885A (en) * 1967-08-15 1974-04-09 Algraphy Ltd Photosensitive lithographic naphthoquinone diazide printing plate with aluminum base
US3637384A (en) * 1969-02-17 1972-01-25 Gaf Corp Positive-working diazo-oxide terpolymer photoresists
US3623870A (en) * 1969-07-22 1971-11-30 Bell Telephone Labor Inc Technique for the preparation of thermally stable photoresist
DE2000623C3 (de) * 1970-01-08 1979-06-28 Agfa-Gevaert Ag, 5090 Leverkusen Photographisches Verfahren zur Herstellung von Bildern
US3759711A (en) * 1970-09-16 1973-09-18 Eastman Kodak Co Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
DE2053363C3 (de) * 1970-10-30 1980-09-18 Hoechst Ag, 6000 Frankfurt Lichtempfindliches Gemisch
US3833436A (en) * 1972-09-05 1974-09-03 Buckbee Mears Co Etching of polyimide films
US3871930A (en) * 1973-12-19 1975-03-18 Texas Instruments Inc Method of etching films made of polyimide based polymers

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264678A1 (fr) * 1986-10-02 1988-04-27 Hoechst Celanese Corporation Polyamides contenant des groupes hexafluoroisopropylène, compositions photosensibles positives les contenant et matériaux d'enregistrement les utilisant
EP0291779A2 (fr) * 1987-05-18 1988-11-23 Siemens Aktiengesellschaft Réserves positives résistantes à la chaleur et procédé de fabrication de structures formant réserve résistantes à la chaleur
EP0291779A3 (en) * 1987-05-18 1989-09-20 Siemens Aktiengesellschaft Heat-resistant positive resist, and process for the production of heat-resistant resist patterns
EP0368800A2 (fr) * 1988-11-05 1990-05-16 Ciba-Geigy Ag Photoréserve positive du genre polyimide
EP0368800A3 (fr) * 1988-11-05 1990-11-22 Ciba-Geigy Ag Photoréserve positive du genre polyimide
EP0478321A1 (fr) * 1990-09-28 1992-04-01 Kabushiki Kaisha Toshiba Composition résineuse photosensible pour la structuration d'un film de polyimide et méthode pour structurer un film de polyimide
US5348835A (en) * 1990-09-28 1994-09-20 Kabushiki Kaisha Toshiba Photosensitive resin composition for forming polyimide film pattern comprising an o-quinone diazide photosensitive agent

Also Published As

Publication number Publication date
JPS5213315A (en) 1977-02-01
US4093461A (en) 1978-06-06
CH619055A5 (fr) 1980-08-29
FR2317680B1 (fr) 1981-08-07
NL164975C (nl) 1981-02-16
CA1063416A (fr) 1979-10-02
NL7607897A (nl) 1977-01-20
DE2631535A1 (de) 1977-02-03
NL164975B (nl) 1980-09-15
GB1548583A (en) 1979-07-18
IT1060035B (it) 1982-07-10

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