JPS5213315A - Photoresist composition - Google Patents

Photoresist composition

Info

Publication number
JPS5213315A
JPS5213315A JP51083611A JP8361176A JPS5213315A JP S5213315 A JPS5213315 A JP S5213315A JP 51083611 A JP51083611 A JP 51083611A JP 8361176 A JP8361176 A JP 8361176A JP S5213315 A JPS5213315 A JP S5213315A
Authority
JP
Japan
Prior art keywords
photoresist composition
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51083611A
Other languages
English (en)
Inventor
Jieimusu Roburesuto Furanku
Furanshisu Matsukuinaan Yuujin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GAF Corp
Original Assignee
GAF Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GAF Corp filed Critical GAF Corp
Publication of JPS5213315A publication Critical patent/JPS5213315A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP51083611A 1975-07-18 1976-07-15 Photoresist composition Pending JPS5213315A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/597,226 US4093461A (en) 1975-07-18 1975-07-18 Positive working thermally stable photoresist composition, article and method of using

Publications (1)

Publication Number Publication Date
JPS5213315A true JPS5213315A (en) 1977-02-01

Family

ID=24390630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51083611A Pending JPS5213315A (en) 1975-07-18 1976-07-15 Photoresist composition

Country Status (9)

Country Link
US (1) US4093461A (ja)
JP (1) JPS5213315A (ja)
CA (1) CA1063416A (ja)
CH (1) CH619055A5 (ja)
DE (1) DE2631535A1 (ja)
FR (1) FR2317680B1 (ja)
GB (1) GB1548583A (ja)
IT (1) IT1060035B (ja)
NL (1) NL164975C (ja)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5622428A (en) * 1979-08-01 1981-03-03 Toray Ind Inc Polyimide pattern forming method
JPS59100135A (ja) * 1982-11-30 1984-06-09 Japan Synthetic Rubber Co Ltd 樹脂組成物
JPS62299846A (ja) * 1986-06-19 1987-12-26 Ube Ind Ltd 感光性ポリイミドのパタ−ン形成方法
JPS6313032A (ja) * 1986-07-03 1988-01-20 Ube Ind Ltd 有機溶媒可溶性のポジ型感光性ポリイミド組成物
WO1992015045A1 (en) * 1991-02-25 1992-09-03 Chisso Corporation Photosensitive polymer composition and pattern formation
US6436593B1 (en) 1999-09-28 2002-08-20 Hitachi Chemical Dupont Microsystems Ltd. Positive photosensitive resin composition, process for producing pattern and electronic parts
US6541178B2 (en) 1999-12-29 2003-04-01 Samsung Electronics Co., Ltd. Ion-type photoacid generator containing naphthol and photosensitive polyimide composition prepared by using the same
US6600006B2 (en) 2000-12-29 2003-07-29 Samsung Electronics Co., Ltd. Positive-type photosensitive polyimide precursor and composition comprising the same
US7157204B2 (en) 2002-11-07 2007-01-02 Samsung Electronics Co., Ltd. Soluble polyimide for photosensitive polyimide precursor and photosensitive polyimide precursor composition comprising the soluble polyimide
US7435525B2 (en) 2004-05-07 2008-10-14 Hitachi Chemical Dupont Microsystems Ltd. Positive photosensitive resin composition, method for forming pattern, and electronic part
US7638254B2 (en) 2004-05-07 2009-12-29 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for forming pattern, and electronic part
JP4730436B2 (ja) * 2006-03-16 2011-07-20 旭硝子株式会社 ネガ型感光性含フッ素芳香族系樹脂組成物
US8071273B2 (en) 2008-03-31 2011-12-06 Dai Nippon Printing Co., Ltd. Polyimide precursor, resin composition comprising the polyimide precursor, pattern forming method using the resin composition, and articles produced by using the resin composition
US8187788B2 (en) 2006-04-28 2012-05-29 Asahi Kasei Kabushiki Kaisha Photosensitive resin composition and photosensitive film
US8298747B2 (en) 2007-03-12 2012-10-30 Hitachi Chemical Dupont Microsystems, Ltd. Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
US8420291B2 (en) 2007-10-29 2013-04-16 Hitachi Chemical Dupont Microsystems, Ltd. Positive photosensitive resin composition, method for forming pattern, electronic component
US8476444B2 (en) 2008-03-31 2013-07-02 Dai Nippon Printing Co., Ltd. Base generator
US8697332B2 (en) 2009-03-31 2014-04-15 Dai Nippon Printing Co., Ltd. Base generator, photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, pattern forming method using the photosensitive resin composition and products comprising the same
US8758977B2 (en) 2005-09-22 2014-06-24 Hitachi Chemical Dupont Microsystems, Ltd. Negative-type photosensitive resin composition, pattern forming method and electronic parts
US9134608B2 (en) 2010-01-21 2015-09-15 Hitachi Chemical Dupont Microsystems, Ltd. Positive photosensitive resin composition, method for producing patterned cured film and electronic component
KR20150121666A (ko) 2014-04-18 2015-10-29 (주)휴넷플러스 폴리실세스퀴옥산 공중합체 및 이를 포함하는 감광성 수지 조성물
KR20170128440A (ko) 2015-03-16 2017-11-22 다이요 홀딩스 가부시키가이샤 포지티브형 감광성 수지 조성물, 드라이 필름, 경화물 및 프린트 배선판
KR20190040835A (ko) 2017-10-11 2019-04-19 타코마테크놀러지 주식회사 바인더 수지 및 이를 포함하는 감광성 수지 조성물 또는 코팅 용액
KR20210061994A (ko) 2018-09-21 2021-05-28 다이요 홀딩스 가부시키가이샤 감광성 수지 조성물, 드라이 필름, 경화물 및 전자 부품
KR20210069579A (ko) 2019-12-03 2021-06-11 도쿄 오카 고교 가부시키가이샤 네가티브형 감광성 수지 조성물 및 경화막의 제조 방법
KR20220154043A (ko) 2021-05-12 2022-11-21 도쿄 오카 고교 가부시키가이샤 감광성 수지, 네가티브형 감광성 수지 조성물, 패턴화된 경화막의 제조 방법 및 카르복시기 함유 수지

Families Citing this family (40)

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US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4180404A (en) * 1977-11-17 1979-12-25 Asahi Kasei Kogyo Kabushiki Kaisha Heat resistant photoresist composition and process for preparing the same
US4326018A (en) * 1977-12-12 1982-04-20 Polychrome Corporation Lithographic printing plate
US4208477A (en) * 1977-12-26 1980-06-17 Asahi Kasei Kogyo Kabushiki Kaisha Heat resistant photoresist composition and process for preparing the same
US4268602A (en) * 1978-12-05 1981-05-19 Toray Industries, Ltd. Photosensitive O-quinone diazide containing composition
US4289573A (en) * 1979-03-30 1981-09-15 International Business Machines Corporation Process for forming microcircuits
US4339522A (en) * 1979-06-18 1982-07-13 International Business Machines Corporation Ultra-violet lithographic resist composition and process
DE2931297A1 (de) * 1979-08-01 1981-02-19 Siemens Ag Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
US4284706A (en) * 1979-12-03 1981-08-18 International Business Machines Corporation Lithographic resist composition for a lift-off process
US4414312A (en) * 1980-09-03 1983-11-08 E. I. Du Pont De Nemours & Co. Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger
US4369247A (en) * 1980-09-03 1983-01-18 E. I. Du Pont De Nemours And Company Process of producing relief structures using polyamide ester resins
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4410612A (en) * 1980-09-03 1983-10-18 E. I. Du Pont De Nemours And Company Electrical device formed from polymeric heat resistant photopolymerizable composition
DE3110632A1 (de) * 1981-03-19 1982-09-30 Hoechst Ag, 6000 Frankfurt Verfahren zum einbrennen von lichtempflindlichen schichten bei der herstellung von druckformen
JPS57168942A (en) * 1981-04-13 1982-10-18 Hitachi Ltd Photosensitive polymer composition
US4476216A (en) * 1981-08-03 1984-10-09 Amdahl Corporation Method for high resolution lithography
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS58223149A (ja) * 1982-06-22 1983-12-24 Toray Ind Inc 感光性ポリイミド用現像液
US5059513A (en) * 1983-11-01 1991-10-22 Hoechst Celanese Corporation Photochemical image process of positive photoresist element with maleimide copolymer
US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
JPS60169852A (ja) * 1984-02-14 1985-09-03 Fuji Photo Film Co Ltd 湿し水不要ネガ型感光性平版印刷版の製版法
US4745045A (en) * 1985-03-11 1988-05-17 International Business Machines Corporation Method for improving resolution in microelectronic circuits using photoresist overlayer by using thermally processed polyimide underlayer formed from positive photoresist and polyamic acid
CA1255142A (en) * 1985-03-11 1989-06-06 Edward C. Fredericks Method and composition of matter for improving conductor resolution in microelectronic circuits
EP0224680B1 (en) * 1985-12-05 1992-01-15 International Business Machines Corporation Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
US4942108A (en) * 1985-12-05 1990-07-17 International Business Machines Corporation Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
CA1308596C (en) * 1986-01-13 1992-10-13 Rohm And Haas Company Microplastic structures and method of manufacture
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
US5021320A (en) * 1986-10-02 1991-06-04 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist
DE3773110D1 (de) * 1986-10-02 1991-10-24 Hoechst Celanese Corp Polyamide mit hexafluorisopropyliden-gruppen, diese enthaltende positiv arbeitende lichtempfindliche gemische und damit hergestellte aufzeichnungsmaterialien.
US5077378A (en) * 1986-10-02 1991-12-31 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group
EP0291779B1 (de) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen
US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
DE3835737A1 (de) * 1988-10-20 1990-04-26 Ciba Geigy Ag Positiv-fotoresists mit erhoehter thermischer stabilitaet
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
US5024922A (en) * 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
DE69128187T2 (de) * 1990-09-28 1998-03-26 Toshiba Kawasaki Kk Fotoempfindliche Harzzusammensetzung zum Herstellen eines Polyimidfilmmusters und Verfahren zum Herstellen eines Polyimidfilmmusters
JP3677191B2 (ja) 1999-03-15 2005-07-27 株式会社東芝 感光性ポリイミド用現像液、ポリイミド膜パターン形成方法、及び電子部品
WO2007148384A1 (ja) * 2006-06-20 2007-12-27 Hitachi Chemical Dupont Microsystems Ltd. ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品
US9274438B1 (en) * 2008-06-25 2016-03-01 Western Digital (Fremont), Llc Method and system for exposing photoresist in a microelectric device
US9519221B2 (en) * 2014-01-13 2016-12-13 Applied Materials, Inc. Method for microwave processing of photosensitive polyimides

Family Cites Families (13)

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NL104507C (ja) * 1957-08-03
NL125781C (ja) * 1959-02-04
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
GB1116674A (en) * 1966-02-28 1968-06-12 Agfa Gevaert Nv Naphthoquinone diazide sulphofluoride
US3551154A (en) * 1966-12-28 1970-12-29 Ferrania Spa Light sensitive article comprising a quinone diazide and polymeric binder
US3802885A (en) * 1967-08-15 1974-04-09 Algraphy Ltd Photosensitive lithographic naphthoquinone diazide printing plate with aluminum base
US3637384A (en) * 1969-02-17 1972-01-25 Gaf Corp Positive-working diazo-oxide terpolymer photoresists
US3623870A (en) * 1969-07-22 1971-11-30 Bell Telephone Labor Inc Technique for the preparation of thermally stable photoresist
DE2000623C3 (de) * 1970-01-08 1979-06-28 Agfa-Gevaert Ag, 5090 Leverkusen Photographisches Verfahren zur Herstellung von Bildern
US3759711A (en) * 1970-09-16 1973-09-18 Eastman Kodak Co Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
DE2053363C3 (de) * 1970-10-30 1980-09-18 Hoechst Ag, 6000 Frankfurt Lichtempfindliches Gemisch
US3833436A (en) * 1972-09-05 1974-09-03 Buckbee Mears Co Etching of polyimide films
US3871930A (en) * 1973-12-19 1975-03-18 Texas Instruments Inc Method of etching films made of polyimide based polymers

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5622428A (en) * 1979-08-01 1981-03-03 Toray Ind Inc Polyimide pattern forming method
JPS59100135A (ja) * 1982-11-30 1984-06-09 Japan Synthetic Rubber Co Ltd 樹脂組成物
JPH0350787B2 (ja) * 1982-11-30 1991-08-02 Japan Synthetic Rubber Co Ltd
JPS62299846A (ja) * 1986-06-19 1987-12-26 Ube Ind Ltd 感光性ポリイミドのパタ−ン形成方法
JPS6313032A (ja) * 1986-07-03 1988-01-20 Ube Ind Ltd 有機溶媒可溶性のポジ型感光性ポリイミド組成物
WO1992015045A1 (en) * 1991-02-25 1992-09-03 Chisso Corporation Photosensitive polymer composition and pattern formation
US6436593B1 (en) 1999-09-28 2002-08-20 Hitachi Chemical Dupont Microsystems Ltd. Positive photosensitive resin composition, process for producing pattern and electronic parts
US6541178B2 (en) 1999-12-29 2003-04-01 Samsung Electronics Co., Ltd. Ion-type photoacid generator containing naphthol and photosensitive polyimide composition prepared by using the same
US6600006B2 (en) 2000-12-29 2003-07-29 Samsung Electronics Co., Ltd. Positive-type photosensitive polyimide precursor and composition comprising the same
US7157204B2 (en) 2002-11-07 2007-01-02 Samsung Electronics Co., Ltd. Soluble polyimide for photosensitive polyimide precursor and photosensitive polyimide precursor composition comprising the soluble polyimide
US7435525B2 (en) 2004-05-07 2008-10-14 Hitachi Chemical Dupont Microsystems Ltd. Positive photosensitive resin composition, method for forming pattern, and electronic part
US7638254B2 (en) 2004-05-07 2009-12-29 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for forming pattern, and electronic part
EP2469337A1 (en) 2004-05-07 2012-06-27 Hitachi Chemical DuPont MicroSystems Ltd. Positive photosensitive resin composition, method for forming pattern, and electronic component
US8871422B2 (en) 2005-09-22 2014-10-28 Hitachi Chemical Dupont Microsystems Ltd. Negative-type photosensitive resin composition, pattern forming method and electronic parts
US8758977B2 (en) 2005-09-22 2014-06-24 Hitachi Chemical Dupont Microsystems, Ltd. Negative-type photosensitive resin composition, pattern forming method and electronic parts
JP4730436B2 (ja) * 2006-03-16 2011-07-20 旭硝子株式会社 ネガ型感光性含フッ素芳香族系樹脂組成物
US8187788B2 (en) 2006-04-28 2012-05-29 Asahi Kasei Kabushiki Kaisha Photosensitive resin composition and photosensitive film
US8298747B2 (en) 2007-03-12 2012-10-30 Hitachi Chemical Dupont Microsystems, Ltd. Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
US8420291B2 (en) 2007-10-29 2013-04-16 Hitachi Chemical Dupont Microsystems, Ltd. Positive photosensitive resin composition, method for forming pattern, electronic component
US8071273B2 (en) 2008-03-31 2011-12-06 Dai Nippon Printing Co., Ltd. Polyimide precursor, resin composition comprising the polyimide precursor, pattern forming method using the resin composition, and articles produced by using the resin composition
US8778596B2 (en) 2008-03-31 2014-07-15 Dai Nippon Printing Co., Ltd. Photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, and pattern forming method and article using the photosensitive resin composition
US8859186B2 (en) 2008-03-31 2014-10-14 Dai Nippon Printing Co., Ltd. Polyimide precursor, resin composition comprising the polyimide precursor, pattern forming method using the resin composition, and articles produced by using the resin composition
US8476444B2 (en) 2008-03-31 2013-07-02 Dai Nippon Printing Co., Ltd. Base generator
US8697332B2 (en) 2009-03-31 2014-04-15 Dai Nippon Printing Co., Ltd. Base generator, photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, pattern forming method using the photosensitive resin composition and products comprising the same
US9134608B2 (en) 2010-01-21 2015-09-15 Hitachi Chemical Dupont Microsystems, Ltd. Positive photosensitive resin composition, method for producing patterned cured film and electronic component
KR20150121666A (ko) 2014-04-18 2015-10-29 (주)휴넷플러스 폴리실세스퀴옥산 공중합체 및 이를 포함하는 감광성 수지 조성물
KR20170128440A (ko) 2015-03-16 2017-11-22 다이요 홀딩스 가부시키가이샤 포지티브형 감광성 수지 조성물, 드라이 필름, 경화물 및 프린트 배선판
KR20190040835A (ko) 2017-10-11 2019-04-19 타코마테크놀러지 주식회사 바인더 수지 및 이를 포함하는 감광성 수지 조성물 또는 코팅 용액
KR20210061994A (ko) 2018-09-21 2021-05-28 다이요 홀딩스 가부시키가이샤 감광성 수지 조성물, 드라이 필름, 경화물 및 전자 부품
KR20210069579A (ko) 2019-12-03 2021-06-11 도쿄 오카 고교 가부시키가이샤 네가티브형 감광성 수지 조성물 및 경화막의 제조 방법
KR20220154043A (ko) 2021-05-12 2022-11-21 도쿄 오카 고교 가부시키가이샤 감광성 수지, 네가티브형 감광성 수지 조성물, 패턴화된 경화막의 제조 방법 및 카르복시기 함유 수지

Also Published As

Publication number Publication date
IT1060035B (it) 1982-07-10
NL164975B (nl) 1980-09-15
NL164975C (nl) 1981-02-16
GB1548583A (en) 1979-07-18
NL7607897A (nl) 1977-01-20
DE2631535A1 (de) 1977-02-03
CH619055A5 (ja) 1980-08-29
US4093461A (en) 1978-06-06
CA1063416A (en) 1979-10-02
FR2317680A1 (fr) 1977-02-04
FR2317680B1 (fr) 1981-08-07

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