ES417198A1 - Perfeccionamientos en la fabricacion de placas para circui-tos integrados. - Google Patents

Perfeccionamientos en la fabricacion de placas para circui-tos integrados.

Info

Publication number
ES417198A1
ES417198A1 ES417198A ES417198A ES417198A1 ES 417198 A1 ES417198 A1 ES 417198A1 ES 417198 A ES417198 A ES 417198A ES 417198 A ES417198 A ES 417198A ES 417198 A1 ES417198 A1 ES 417198A1
Authority
ES
Spain
Prior art keywords
groups
lsi chip
emitter
semiconductor body
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES417198A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu IT Holdings Inc
Original Assignee
Amdahl Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amdahl Corp filed Critical Amdahl Corp
Publication of ES417198A1 publication Critical patent/ES417198A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11801—Masterslice integrated circuits using bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
ES417198A 1972-07-10 1973-07-10 Perfeccionamientos en la fabricacion de placas para circui-tos integrados. Expired ES417198A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00270449A US3808475A (en) 1972-07-10 1972-07-10 Lsi chip construction and method

Publications (1)

Publication Number Publication Date
ES417198A1 true ES417198A1 (es) 1976-06-16

Family

ID=23031365

Family Applications (1)

Application Number Title Priority Date Filing Date
ES417198A Expired ES417198A1 (es) 1972-07-10 1973-07-10 Perfeccionamientos en la fabricacion de placas para circui-tos integrados.

Country Status (17)

Country Link
US (1) US3808475A (es)
JP (1) JPS5531624B2 (es)
AT (1) AT371628B (es)
AU (1) AU467309B2 (es)
BE (1) BE801909A (es)
BR (1) BR7305011D0 (es)
CA (1) CA990414A (es)
CH (2) CH599679A5 (es)
DE (1) DE2334405B2 (es)
DK (1) DK139208B (es)
ES (1) ES417198A1 (es)
FR (1) FR2192383B1 (es)
GB (3) GB1443361A (es)
IT (1) IT991086B (es)
NL (1) NL7309342A (es)
NO (2) NO141623C (es)
SE (1) SE409628B (es)

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US3916434A (en) * 1972-11-30 1975-10-28 Power Hybrids Inc Hermetically sealed encapsulation of semiconductor devices
US3999214A (en) * 1974-06-26 1976-12-21 Ibm Corporation Wireable planar integrated circuit chip structure
CA1024661A (en) * 1974-06-26 1978-01-17 International Business Machines Corporation Wireable planar integrated circuit chip structure
GB1584003A (en) * 1976-06-07 1981-02-04 Amdahl Corp Data processing system and information scanout
JPS5519005Y2 (es) * 1976-11-24 1980-05-06
US4969029A (en) * 1977-11-01 1990-11-06 Fujitsu Limited Cellular integrated circuit and hierarchial method
CA1102009A (en) * 1977-09-06 1981-05-26 Algirdas J. Gruodis Integrated circuit layout utilizing separated active circuit and wiring regions
JPS5493376A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor integrated circuit device
JPS60953B2 (ja) * 1977-12-30 1985-01-11 富士通株式会社 半導体集積回路装置
US4259935A (en) * 1978-04-05 1981-04-07 Toyota Jidosha Kogyo Kabushiki Kaisha Fuel injection type throttle valve
FR2426334A1 (fr) * 1978-05-19 1979-12-14 Fujitsu Ltd Dispositif de connexion de semi-conducteurs et son procede de fabrication
JPS5555541A (en) * 1978-10-20 1980-04-23 Hitachi Ltd Semiconductor element
GB2035688A (en) * 1978-11-13 1980-06-18 Hughes Aircraft Co A multi-function large scale integrated circuit
US4278897A (en) * 1978-12-28 1981-07-14 Fujitsu Limited Large scale semiconductor integrated circuit device
DE3066941D1 (en) * 1979-05-24 1984-04-19 Fujitsu Ltd Masterslice semiconductor device and method of producing it
US4320438A (en) * 1980-05-15 1982-03-16 Cts Corporation Multi-layer ceramic package
JPS57153464A (en) * 1981-03-18 1982-09-22 Toshiba Corp Injection type semiconductor integrated logic circuit
US4413271A (en) * 1981-03-30 1983-11-01 Sprague Electric Company Integrated circuit including test portion and method for making
US4475119A (en) * 1981-04-14 1984-10-02 Fairchild Camera & Instrument Corporation Integrated circuit power transmission array
JPS5844743A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体集積回路
JPS5884445A (ja) * 1981-11-16 1983-05-20 Hitachi Ltd 大規模集積回路
EP0087979B1 (en) * 1982-03-03 1989-09-06 Fujitsu Limited A semiconductor memory device
DE3382727D1 (de) * 1982-06-30 1994-01-27 Fujitsu Ltd Integrierte Halbleiterschaltungsanordnung.
US4511914A (en) * 1982-07-01 1985-04-16 Motorola, Inc. Power bus routing for providing noise isolation in gate arrays
US4549262A (en) * 1983-06-20 1985-10-22 Western Digital Corporation Chip topography for a MOS disk memory controller circuit
DE3374638D1 (en) * 1983-06-30 1987-12-23 Ibm Logic circuits for creating very dense logic networks
US4593205A (en) * 1983-07-01 1986-06-03 Motorola, Inc. Macrocell array having an on-chip clock generator
JPS6030152A (ja) * 1983-07-28 1985-02-15 Toshiba Corp 集積回路
US4583111A (en) * 1983-09-09 1986-04-15 Fairchild Semiconductor Corporation Integrated circuit chip wiring arrangement providing reduced circuit inductance and controlled voltage gradients
US4575744A (en) * 1983-09-16 1986-03-11 International Business Machines Corporation Interconnection of elements on integrated circuit substrate
US4737836A (en) * 1983-12-30 1988-04-12 International Business Machines Corporation VLSI integrated circuit having parallel bonding areas
JPS60152039A (ja) * 1984-01-20 1985-08-10 Toshiba Corp ＧａＡｓゲ−トアレイ集積回路
EP0177560A1 (en) * 1984-03-22 1986-04-16 Mostek Corporation Integrated circuit add-on components
WO1985004518A1 (en) * 1984-03-22 1985-10-10 Mostek Corporation Integrated circuits with contact pads in a standard array
JPS6112042A (ja) * 1984-06-27 1986-01-20 Toshiba Corp マスタ−スライス型半導体装置
GB2168840A (en) * 1984-08-22 1986-06-25 Plessey Co Plc Customerisation of integrated logic devices
JPS61241964A (ja) * 1985-04-19 1986-10-28 Hitachi Ltd 半導体装置
US4789889A (en) * 1985-11-20 1988-12-06 Ge Solid State Patents, Inc. Integrated circuit device having slanted peripheral circuits
US4959751A (en) * 1988-08-16 1990-09-25 Delco Electronics Corporation Ceramic hybrid integrated circuit having surface mount device solder stress reduction
US5121298A (en) * 1988-08-16 1992-06-09 Delco Electronics Corporation Controlled adhesion conductor
JPH0727968B2 (ja) * 1988-12-20 1995-03-29 株式会社東芝 半導体集積回路装置
US5126822A (en) * 1989-02-14 1992-06-30 North American Philips Corporation Supply pin rearrangement for an I.C.
ES2208631T3 (es) * 1989-02-14 2004-06-16 Koninklijke Philips Electronics N.V. Disposicion de clavijas de alimentacion para un circuito integrado.
NL8901822A (nl) * 1989-07-14 1991-02-01 Philips Nv Geintegreerde schakeling met stroomdetectie.
GB9007492D0 (en) * 1990-04-03 1990-05-30 Pilkington Micro Electronics Semiconductor integrated circuit
JPH04132252A (ja) * 1990-09-21 1992-05-06 Hitachi Ltd 半導体集積回路装置
US5446410A (en) * 1992-04-20 1995-08-29 Matsushita Electric Industrial Co.,Ltd. Semiconductor integrated circuit
JPH0824177B2 (ja) * 1992-11-13 1996-03-06 セイコーエプソン株式会社 半導体装置
US6675361B1 (en) * 1993-12-27 2004-01-06 Hyundai Electronics America Method of constructing an integrated circuit comprising an embedded macro
US5671397A (en) * 1993-12-27 1997-09-23 At&T Global Information Solutions Company Sea-of-cells array of transistors
US5440153A (en) * 1994-04-01 1995-08-08 United Technologies Corporation Array architecture with enhanced routing for linear asics
US5757041A (en) 1996-09-11 1998-05-26 Northrop Grumman Corporation Adaptable MMIC array
US6137181A (en) * 1999-09-24 2000-10-24 Nguyen; Dzung Method for locating active support circuitry on an integrated circuit fabrication die

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NL121810C (es) * 1955-11-04
US3312871A (en) * 1964-12-23 1967-04-04 Ibm Interconnection arrangement for integrated circuits
US3639814A (en) * 1967-05-24 1972-02-01 Telefunken Patent Integrated semiconductor circuit having increased barrier layer capacitance
US3643232A (en) * 1967-06-05 1972-02-15 Texas Instruments Inc Large-scale integration of electronic systems in microminiature form
US3365707A (en) * 1967-06-23 1968-01-23 Rca Corp Lsi array and standard cells
US3584269A (en) * 1968-10-11 1971-06-08 Ibm Diffused equal impedance interconnections for integrated circuits
JPS492796B1 (es) * 1969-02-28 1974-01-22
JPS492798B1 (es) * 1969-04-16 1974-01-22
US3656028A (en) * 1969-05-12 1972-04-11 Ibm Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereon
DE2033130A1 (de) * 1969-07-04 1971-02-04 Hitachi Ltd , Tokio Verfahren zur Herstellung einer mte gnerten Großschaltung
DE2109803C3 (de) * 1970-03-12 1981-09-10 Honeywell Information Systems Italia S.p.A., Caluso, Torino Integrierter Elementarstromkreis mit Feldeffekt-Transistoren
US3621562A (en) * 1970-04-29 1971-11-23 Sylvania Electric Prod Method of manufacturing integrated circuit arrays
US3689803A (en) * 1971-03-30 1972-09-05 Ibm Integrated circuit structure having a unique surface metallization layout

Also Published As

Publication number Publication date
JPS5531624B2 (es) 1980-08-19
IT991086B (it) 1975-07-30
AT371628B (de) 1983-07-11
ATA594873A (de) 1982-11-15
NL7309342A (es) 1974-01-14
CA990414A (en) 1976-06-01
GB1443363A (en) 1976-07-21
JPS4939388A (es) 1974-04-12
CH600568A5 (es) 1978-06-15
DK139208C (es) 1979-07-16
AU5794673A (en) 1975-02-06
NO141623C (no) 1980-04-16
NO141623B (no) 1980-01-02
AU467309B2 (en) 1975-11-27
NO783892L (no) 1974-01-11
CH599679A5 (es) 1978-05-31
DE2334405C3 (es) 1987-01-22
SE409628B (sv) 1979-08-27
DE2334405A1 (de) 1974-01-31
DK139208B (da) 1979-01-08
GB1443365A (en) 1976-07-21
US3808475A (en) 1974-04-30
FR2192383B1 (es) 1978-09-08
GB1443361A (en) 1976-07-21
BR7305011D0 (pt) 1974-08-22
DE2334405B2 (de) 1980-08-14
BE801909A (fr) 1973-11-05
FR2192383A1 (es) 1974-02-08

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