ES363798A1 - Una disposicion de circuito electrico monolitico. - Google Patents
Una disposicion de circuito electrico monolitico.Info
- Publication number
- ES363798A1 ES363798A1 ES363798A ES363798A ES363798A1 ES 363798 A1 ES363798 A1 ES 363798A1 ES 363798 A ES363798 A ES 363798A ES 363798 A ES363798 A ES 363798A ES 363798 A1 ES363798 A1 ES 363798A1
- Authority
- ES
- Spain
- Prior art keywords
- resistor
- pinch
- diode
- terminal
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1574651*CA DE1574651C3 (de) | 1968-03-01 | 1968-03-01 | Monolithisch integrierte Flip-Flop-Speicherzelle |
Publications (1)
Publication Number | Publication Date |
---|---|
ES363798A1 true ES363798A1 (es) | 1970-12-16 |
Family
ID=5678723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES363798A Expired ES363798A1 (es) | 1968-03-01 | 1969-02-19 | Una disposicion de circuito electrico monolitico. |
Country Status (6)
Country | Link |
---|---|
US (1) | US3693057A (es) |
DE (1) | DE1574651C3 (es) |
ES (1) | ES363798A1 (es) |
FR (1) | FR1602846A (es) |
GB (1) | GB1252464A (es) |
NL (1) | NL169804C (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2126073B1 (es) * | 1971-02-23 | 1975-03-21 | Dyakov Jury | |
US3936813A (en) * | 1973-04-25 | 1976-02-03 | Intel Corporation | Bipolar memory cell employing inverted transistors and pinched base resistors |
US4136355A (en) * | 1976-02-10 | 1979-01-23 | Matsushita Electronics Corporation | Darlington transistor |
JPS5325375A (en) * | 1976-07-31 | 1978-03-09 | Nippon Gakki Seizo Kk | Semiconductor integrated circuit devi ce |
DE2733615A1 (de) * | 1977-07-26 | 1979-02-01 | Ibm Deutschland | Hochintegrierte halbleiteranordnung enthaltend eine dioden-/widerstandskonfiguration |
DE2739283A1 (de) * | 1977-08-31 | 1979-03-15 | Siemens Ag | Integrierbare halbleiterspeicherzelle |
JPS546364Y1 (es) * | 1977-09-01 | 1979-03-24 | ||
JPS6057707B2 (ja) * | 1978-01-25 | 1985-12-16 | 株式会社日立製作所 | 記憶回路 |
NL188721C (nl) * | 1978-12-22 | 1992-09-01 | Philips Nv | Halfgeleidergeheugenschakeling voor een statisch geheugen. |
JPS5841662B1 (es) * | 1981-02-20 | 1983-09-13 | Nippon Electric Co |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3510735A (en) * | 1967-04-13 | 1970-05-05 | Scient Data Systems Inc | Transistor with integral pinch resistor |
US3573754A (en) * | 1967-07-03 | 1971-04-06 | Texas Instruments Inc | Information transfer system |
-
1968
- 1968-03-01 DE DE1574651*CA patent/DE1574651C3/de not_active Expired
- 1968-12-30 FR FR1602846D patent/FR1602846A/fr not_active Expired
-
1969
- 1969-02-19 GB GB1252464D patent/GB1252464A/en not_active Expired
- 1969-02-19 ES ES363798A patent/ES363798A1/es not_active Expired
- 1969-02-26 NL NLAANVRAGE6903029,A patent/NL169804C/xx not_active IP Right Cessation
-
1971
- 1971-03-24 US US127751A patent/US3693057A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1574651C3 (de) | 1976-01-02 |
NL6903029A (es) | 1969-09-03 |
NL169804C (nl) | 1982-08-16 |
DE1574651A1 (de) | 1971-09-09 |
FR1602846A (es) | 1971-02-01 |
NL169804B (nl) | 1982-03-16 |
GB1252464A (es) | 1971-11-03 |
US3693057A (en) | 1972-09-19 |
DE1574651B2 (de) | 1975-04-24 |
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