ES2125311T3 - Procedimiento para la formacion de una pelicula por deposito para un elemento receptor de luz, elemento receptor de luz fabricado por el procedimiento, aparato para la formacion de una pelicula por deposito y metodo para la limpieza del aparato para el deposito de una pelicula. - Google Patents

Procedimiento para la formacion de una pelicula por deposito para un elemento receptor de luz, elemento receptor de luz fabricado por el procedimiento, aparato para la formacion de una pelicula por deposito y metodo para la limpieza del aparato para el deposito de una pelicula.

Info

Publication number
ES2125311T3
ES2125311T3 ES93308432T ES93308432T ES2125311T3 ES 2125311 T3 ES2125311 T3 ES 2125311T3 ES 93308432 T ES93308432 T ES 93308432T ES 93308432 T ES93308432 T ES 93308432T ES 2125311 T3 ES2125311 T3 ES 2125311T3
Authority
ES
Spain
Prior art keywords
deposit
film
light receiving
procedure
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93308432T
Other languages
English (en)
Inventor
Ryuji Okamura
Kazuyoshi Akiyama
Hitoshi Murayama
Koji Hitsuishi
Satoshi Kojima
Hirokazu Ohtoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27577696&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2125311(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2125311T3 publication Critical patent/ES2125311T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

SE DESCRIBE UN PROCESO PARA PRODUCIR UN MIEMBRO RECEPTOR DE LUZ QUE COMPRENDE UN SUSTRATO Y UNA CAPA RECEPTORA DE LUZ NO-MONOCRISTALINA SOBRE EL SUSTRATO; QUE COMPRENDE FORMAR AL MENOS UNA PARTE DE LA CAPA POR DESCOMPOSICION DE UN GAS DE MATERIAL INICIADOR QUE SE INTRODUCE EN UNA CAMARA DE REACCION POR MEDIO DE UNA ONDA ELECTROMAGNETICA CON UNA FRECUENCIA DE 20 A 450 MHZ.
ES93308432T 1992-10-23 1993-10-22 Procedimiento para la formacion de una pelicula por deposito para un elemento receptor de luz, elemento receptor de luz fabricado por el procedimiento, aparato para la formacion de una pelicula por deposito y metodo para la limpieza del aparato para el deposito de una pelicula. Expired - Lifetime ES2125311T3 (es)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP30787392 1992-10-23
JP30787292 1992-10-23
JP29726692 1992-11-06
JP29726992 1992-11-06
JP29726892 1992-11-06
JP34211392 1992-12-22
JP35727692 1992-12-24
JP34301892 1992-12-24
JP26221393A JP3155413B2 (ja) 1992-10-23 1993-10-20 光受容部材の形成方法、該方法による光受容部材および堆積膜の形成装置

Publications (1)

Publication Number Publication Date
ES2125311T3 true ES2125311T3 (es) 1999-03-01

Family

ID=27577696

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93308432T Expired - Lifetime ES2125311T3 (es) 1992-10-23 1993-10-22 Procedimiento para la formacion de una pelicula por deposito para un elemento receptor de luz, elemento receptor de luz fabricado por el procedimiento, aparato para la formacion de una pelicula por deposito y metodo para la limpieza del aparato para el deposito de una pelicula.

Country Status (5)

Country Link
US (2) US5455138A (es)
EP (1) EP0594453B1 (es)
JP (1) JP3155413B2 (es)
DE (1) DE69322926T2 (es)
ES (1) ES2125311T3 (es)

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JP2943691B2 (ja) * 1996-04-25 1999-08-30 日本電気株式会社 プラズマ処理装置
JP3754751B2 (ja) * 1996-05-23 2006-03-15 キヤノン株式会社 光受容部材
DE19654109C2 (de) * 1996-12-23 1999-12-09 Karl F Massholder Desinfizierbare Oberflächenschicht
JP3428865B2 (ja) 1997-07-09 2003-07-22 キヤノン株式会社 堆積膜の形成装置及び堆積膜形成方法
DE69929371T2 (de) * 1998-05-14 2006-08-17 Canon K.K. Elektrophotographischer Bildherstellungsapparat
US6290779B1 (en) * 1998-06-12 2001-09-18 Tokyo Electron Limited Systems and methods for dry cleaning process chambers
EP0977246A3 (en) * 1998-07-31 2005-11-09 Canon Kabushiki Kaisha Production process of semiconductor layer, fabrication process of photovoltaic cell and production apparatus of semiconductor layer
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US7033721B2 (en) * 2002-08-02 2006-04-25 Canon Kabushiki Kaisha Method for producing electrophotographic photosensitive member, electrophotographic photosensitive member and electrophotographic apparatus using the same
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JP5121785B2 (ja) 2008-07-25 2013-01-16 キヤノン株式会社 電子写真感光体および電子写真装置
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JP5398394B2 (ja) * 2008-07-25 2014-01-29 キヤノン株式会社 電子写真感光体および電子写真装置
JP5081199B2 (ja) * 2008-07-25 2012-11-21 キヤノン株式会社 電子写真感光体の製造方法
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JP5607499B2 (ja) * 2009-11-17 2014-10-15 キヤノン株式会社 電子写真感光体および電子写真装置
JP5653186B2 (ja) * 2009-11-25 2015-01-14 キヤノン株式会社 電子写真装置
JP5675287B2 (ja) * 2009-11-26 2015-02-25 キヤノン株式会社 電子写真感光体および電子写真装置
JP5675289B2 (ja) * 2009-11-26 2015-02-25 キヤノン株式会社 電子写真感光体および電子写真装置
JP5675292B2 (ja) * 2009-11-27 2015-02-25 キヤノン株式会社 電子写真感光体および電子写真装置
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Also Published As

Publication number Publication date
DE69322926T2 (de) 1999-06-10
EP0594453A3 (en) 1994-09-14
US5455138A (en) 1995-10-03
EP0594453A2 (en) 1994-04-27
JPH06242624A (ja) 1994-09-02
DE69322926D1 (de) 1999-02-18
EP0594453B1 (en) 1999-01-07
US5817181A (en) 1998-10-06
JP3155413B2 (ja) 2001-04-09

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