KR920000109A - 마이크로파 플라즈마 강화 cvd법을 이용한 박막형성 방법 및 장치, 그리고 그 용도 - Google Patents

마이크로파 플라즈마 강화 cvd법을 이용한 박막형성 방법 및 장치, 그리고 그 용도 Download PDF

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KR920000109A
KR920000109A KR1019910003382A KR910003382A KR920000109A KR 920000109 A KR920000109 A KR 920000109A KR 1019910003382 A KR1019910003382 A KR 1019910003382A KR 910003382 A KR910003382 A KR 910003382A KR 920000109 A KR920000109 A KR 920000109A
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thin film
microwave
gas
plasma
film forming
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사또루 토도로끼
마사히로 타나까
쿠니히꼬 와따나베
미쯔오 나까따니
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미따 가쯔시게
가부시기가이샤 히다찌세이사구쇼
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Abstract

내용 없음

Description

마이크로파 플라즈마 강화 CVD법을 이용한 박막형성 방법 및 장치, 그리고 그 용도
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 실시하기 위한 마이크로파 플라즈마 강화 CVD장치의 한 유형의 개략단면도,
제2도는 본 발명에 따라서 형성된 박막을 가지는 박막트랜지스어 단면도,
제4도는 본 발명에 따라서 형성된 박막을 이용한 액정표시장치의 부분 절단 사시도.

Claims (10)

  1. 마이크로파를 발생하기 위한 마이크로파원과, 플라즈마 강화 CVD를 받도록 가공부품상에 소망의 조성외막을 증착하기 위한 막형성 챔버와, 상기 막형성챔버내에 소망의 조성의 막을 형성하는데 필요한 가스를 공급하기 위한 가스공급수단과, 상기 마이크로파원에 의해 발생된 마이크로파를 전파함과 동시에, 막형성챔버로 마이크로파를 확대하고 방사하여 가스공급수단을 통해 공급된 가스의 플라즈마를 발생하기 위한 마이크로파방사안내부와, 상기 플라즈마에 자계를 인가하여 방사된 마이크로파와 함께 전자사이클로트론공진을 일으키기 위한 자계인가 수단과, 막형성챔버를 지공으로하여 막형성챔버의 내부압력을 소망의 Torr가 되도록 하기 위한 진공수단으로 구성된 마이크로파플라즈마 강화 CVD법을 이용한 박막형성장치.
  2. 제1항에 있어서, 상기 마이크로파 방사안내부는 막형성챔버를 향하여 증가하는 횡단면을 가진 전자호온과 상기 챔버내의 개구부로 구성되고, 상기 챔버내의 마이크로파 방사안내부의 개구부의 면적은 막이 가공부품상에 형성되는 면적보다 큰것을 특징으로 하는 마이크파 플라즈마 강화 CVD법을 이용한 박막형성장치.
  3. 제1항에 있어서, 발생된 플라즈마를 챔버내에 제한된 공간에서 유지함과 동시에 마이크로파가 투과할 수 있는 마이크로파 투과성 재료로 이루어진 간막이로 구성된 것을 특징으로 하는 마이크로파 플라즈마 강화 CVD법을 이용한 박막형성장치.
  4. 제1항에 있어서, 상기 가스공급수단은 가스도입수단과, 복수의 개구부를 가지고 가스를 이 개구부를 통하여 분출하기 위한 가스분출수단으로 구성된 것을 특징으로 하는 마이크로파 플라즈마 강화 CVD법을 이용한 박막형성장치.
  5. 제4항에 있어서, 상기 가스분출수단의 개구부는 박막이 형성되는 면적보다 큰 면적에 걸쳐서 가스흐름분포가 거의 균일하게 되도록 배열되어, 흐름의 방향이 가공부품에 거의 수직이 되도록 가스가 막형성챔버내로 분출되는 것을 특징으로 하는 마이크로보다 플라즈마 강화 CVD법을 이용한 박막형성장치.
  6. 제4항에 있어서, 상기 가스분출수단은 플라즈마가 발생되는 공간에 인접하고 간막이와 인접한 위치에 설치되는 것을 특징으로 하는 마이크로파 플라즈마 강화 CVD법을 이용한 박막형성장치.
  7. 적외선 흡수스펙트럼에서 N-H흡수(3340㎝-1)면적강도(b)에 대한 Si-H흡수(2200㎝-1)면적강도(b)에 대한 si-H흡수(2200㎝-1)(면적강도(a)의 비가 0.25이하인 SiN×Hy(×+×≤4)로 이루어진 게이트 절연막으로 구성된 것을 특징으로 하는 박막트랜지스
  8. 제7항에 있어서, 복수의 박막의 기판상에 형성되고, 이 박막트랜지스터는, 기판상의 소정의 위치에 형성된 게이트 전극과, 게이트 전극을 덮도록 기판상의 넓은 면적에 걸쳐 형성된 게이트 절연막과, 상기 게이트 절연막상의 소정의 위치에 형성되는 1TO막과, 게이트전극의 상부 및 1TO막의 근방에는 게이트절연막상에 형성되는 비결정성실리콘i층과, 비경정성 실리콘i층상에 형성되고 개구부를 가지는 비결정성 실리콘 n+층과, 비결정성 실리콘 n+층의 일부분상에 형성된 드레인 전극과, 상기 비결정성 실리콘i층 및 비결정성 실리콘 n+층의 주변부의 일부분을 덮고 1TO막의 주변부의 일부분을 덮도록 형성된 소오스전극으로 구성된 것을 특징으로 하는 박막트랜지스터.
  9. 액정 구동용 트랜지스터로써 제7항에 의한 박막트랜지스터가 사용되는 것을 특징으로 하는 액정표시장치.
  10. 마이크로파를 발생하는 공정과, 박막이 형성될 가공부품을 향하여 거의 균일한 유속분포에서 소망의 조성의 막을 형성하기 위하여 가스를 공급하는 공정과, 발생된 마이크로파를 전파함과 동시에 확대하여 막이 형성될 면적보다 더 큰 면적에 걸쳐서 마이크로파를 방사하는 공정과, 상기 가스 및 마이크로파가 공급되는 가공부품의 전방 영역에 플라즈마를 발생하는 공정과, 발생된 플라즈마에 전자사이클로트론 공명을 일으키기 위한 자계를 인가하는 공정과, 가공부품상에 마이크로파 강화 CVD법을 이용하여 막을 증착하는 공정으로 구성된 것을 특징으로 하는 마이크로파 플라즈마 강화 CVD 법을 이용한 박막형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910003382A 1990-02-28 1991-02-28 마이크로파플라즈마강화 cvd장치 및 박막트랜지스터, 그리고 그 응용장치 KR950013426B1 (ko)

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JP2-48566 1990-02-28
JP2048566A JPH03250769A (ja) 1990-02-28 1990-02-28 大規模薄膜トランジスタおよびその製造方法
JP2-67001 1990-03-19
JP6700190 1990-03-19

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KR920000109A true KR920000109A (ko) 1992-01-10
KR950013426B1 KR950013426B1 (ko) 1995-11-08

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