ES2058498T3 - Subconjuntos para circuitos integrados hibridos optoelectronicos. - Google Patents

Subconjuntos para circuitos integrados hibridos optoelectronicos.

Info

Publication number
ES2058498T3
ES2058498T3 ES89301717T ES89301717T ES2058498T3 ES 2058498 T3 ES2058498 T3 ES 2058498T3 ES 89301717 T ES89301717 T ES 89301717T ES 89301717 T ES89301717 T ES 89301717T ES 2058498 T3 ES2058498 T3 ES 2058498T3
Authority
ES
Spain
Prior art keywords
base
chips
assemblies
sub
integrated circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES89301717T
Other languages
English (en)
Inventor
Greg E Blonder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of ES2058498T3 publication Critical patent/ES2058498T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

CHIPS OPTOELECTRONICOS, COMO LASERES COMPUESTOS DEL GRUPO III-V (16) Y FOTODIODOS (24,28), QUE SON MONTADOS SOBRE UNA BASE DE SILICIO DE CRISTAL SENCILLO (10), Y SON INTERCONECTADOS OPTICAMENTE ENTRE SI MEDIANTE GUIAS DE ONDAS DE SILICE (14,22,26) Y ACOPLADORES (20,23) FORMADOS INTEGRAMENTE EN LA BASE. UNOS CHIPS DE CIRCUITO INTEGRADO (40,42) QUE PROPORCIONAN FUNCIONES ELECTRONICAS ESTAN ASIMISMO MONTADOS EN LA BASE. SE DESCRIBEN VARIOS ESQUEMAS PARA ACOPLAR OPTICAMENTE Y ALINEAR LASERES, FOTODIODOS Y FIBRAS OPTICAS A LAS GUIAS DE ONDAS. TAMBIEN SE DESCRIBE EL USO DE UNA TAPA DE SILICIO DE CRISTAL SENCILLO, QUE SIRVE PARA PROPORCIONAR UN AISLAMIENTO OPTICO Y ELECTRICO ENTRE LOS CHIPS QUE ESTAN EN LA BASE, ASI COMO ACOPLAMIENTOS EN LOS QUE LOS BORDES DE LA BASE ESTAN ADAPTADOS PARA RECIBIR BARRAS DE GUIA PARALELAS.
ES89301717T 1988-03-03 1989-02-22 Subconjuntos para circuitos integrados hibridos optoelectronicos. Expired - Lifetime ES2058498T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/163,688 US4904036A (en) 1988-03-03 1988-03-03 Subassemblies for optoelectronic hybrid integrated circuits
SG154394A SG154394G (en) 1988-03-03 1994-10-21 Subassemblies for optoelectronic hybrid integrated circuits

Publications (1)

Publication Number Publication Date
ES2058498T3 true ES2058498T3 (es) 1994-11-01

Family

ID=26664453

Family Applications (1)

Application Number Title Priority Date Filing Date
ES89301717T Expired - Lifetime ES2058498T3 (es) 1988-03-03 1989-02-22 Subconjuntos para circuitos integrados hibridos optoelectronicos.

Country Status (6)

Country Link
US (1) US4904036A (es)
EP (1) EP0331338B1 (es)
JP (1) JPH0734495B2 (es)
DE (1) DE68918133T2 (es)
ES (1) ES2058498T3 (es)
SG (1) SG154394G (es)

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EP0331338B1 (en) 1994-09-14
US4904036A (en) 1990-02-27
JPH0734495B2 (ja) 1995-04-12
JPH029187A (ja) 1990-01-12
EP0331338A3 (en) 1991-01-16
EP0331338A2 (en) 1989-09-06
DE68918133T2 (de) 1995-01-12
SG154394G (en) 1995-03-17
DE68918133D1 (de) 1994-10-20

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