EP3289979A3 - Breit abstimmbare gewobbelte quelle - Google Patents
Breit abstimmbare gewobbelte quelle Download PDFInfo
- Publication number
- EP3289979A3 EP3289979A3 EP17189482.7A EP17189482A EP3289979A3 EP 3289979 A3 EP3289979 A3 EP 3289979A3 EP 17189482 A EP17189482 A EP 17189482A EP 3289979 A3 EP3289979 A3 EP 3289979A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- wavelength
- vcl
- swept source
- widely tunable
- tunable swept
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
- G01B9/02091—Tomographic interferometers, e.g. based on optical coherence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
- H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361793730P | 2013-03-15 | 2013-03-15 | |
PCT/US2014/029458 WO2014144866A2 (en) | 2013-03-15 | 2014-03-14 | Widely tunable swept source |
EP14763284.8A EP2967468A4 (de) | 2013-03-15 | 2014-03-14 | Breit abstimmbare gewobbelte quelle |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14763284.8A Division EP2967468A4 (de) | 2013-03-15 | 2014-03-14 | Breit abstimmbare gewobbelte quelle |
Publications (3)
Publication Number | Publication Date |
---|---|
EP3289979A2 EP3289979A2 (de) | 2018-03-07 |
EP3289979A3 true EP3289979A3 (de) | 2018-06-13 |
EP3289979B1 EP3289979B1 (de) | 2023-03-01 |
Family
ID=51525934
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14763284.8A Withdrawn EP2967468A4 (de) | 2013-03-15 | 2014-03-14 | Breit abstimmbare gewobbelte quelle |
EP17189482.7A Active EP3289979B1 (de) | 2013-03-15 | 2014-03-14 | Breit abstimmbare gewobbelte quelle |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14763284.8A Withdrawn EP2967468A4 (de) | 2013-03-15 | 2014-03-14 | Breit abstimmbare gewobbelte quelle |
Country Status (6)
Country | Link |
---|---|
US (2) | US9774166B2 (de) |
EP (2) | EP2967468A4 (de) |
JP (1) | JP6553019B2 (de) |
CN (1) | CN105188540B (de) |
CA (1) | CA2905537C (de) |
WO (2) | WO2014144998A2 (de) |
Families Citing this family (28)
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US10215551B2 (en) * | 2012-07-27 | 2019-02-26 | Praevium Research, Inc. | Agile imaging system |
CN105518951B (zh) | 2013-07-03 | 2018-06-01 | 英菲尼斯有限责任公司 | 用于扫频源光学相干层析成像系统的波长可调谐垂直腔面发射激光器 |
WO2015081130A1 (en) * | 2013-11-26 | 2015-06-04 | Inphenix, Inc. | Wavelength tunable mems-fabry perot filter |
JP6282094B2 (ja) * | 2013-11-27 | 2018-02-21 | キヤノン株式会社 | 面発光レーザ、およびそれを用いた光干渉断層計 |
JP2015233127A (ja) * | 2014-05-12 | 2015-12-24 | キヤノン株式会社 | 面発光レーザ、レーザアレイ、光源装置、情報取得装置及び光干渉断層計 |
JP6685701B2 (ja) | 2014-12-26 | 2020-04-22 | キヤノン株式会社 | 面発光レーザ、情報取得装置、撮像装置、レーザアレイ及び面発光レーザの製造方法 |
JP6576092B2 (ja) | 2015-04-30 | 2019-09-18 | キヤノン株式会社 | 面発光レーザ、情報取得装置及び撮像装置 |
JP2017092070A (ja) * | 2015-11-02 | 2017-05-25 | 日本電信電話株式会社 | 波長掃引光源 |
AU2017382218B2 (en) * | 2016-12-21 | 2023-05-11 | Acucela Inc. | Miniaturized mobile, low cost optical coherence tomography system for home based ophthalmic applications |
DE102017205144B4 (de) | 2017-03-27 | 2019-03-14 | Jenoptik Laser Gmbh | Oberflächenemittierender Halbleiterlaser mit veränderlicher Wellenzahl |
CN112385099A (zh) * | 2018-05-08 | 2021-02-19 | 加利福尼亚大学董事会 | 具有宽波长扫频的气腔占优vcsel |
JP7443248B2 (ja) * | 2018-05-11 | 2024-03-05 | エクセリタス テクノロジーズ コーポレイション | 幾何学的分離を採用する光ポンピングチューナブルvcsel |
JP2019201179A (ja) * | 2018-05-18 | 2019-11-21 | 株式会社Qdレーザ | 面発光レーザおよび検査装置 |
KR20210025002A (ko) * | 2018-06-19 | 2021-03-08 | 액썬 테크놀로지스, 인코포레이티드 | 파장 가변형 수직 공진 표면광 레이저 내의 양자 우물 배치 |
CN112638233B (zh) | 2018-06-20 | 2024-06-14 | 奥克塞拉有限公司 | 基于家庭的眼科应用的微型移动低成本光学相干断层扫描系统 |
CN108879327A (zh) * | 2018-07-17 | 2018-11-23 | 长春理工大学 | 一种低应力微机电系统、制备方法及可调谐垂直腔面发射激光器 |
GB2582378B (en) * | 2019-03-22 | 2022-08-24 | Camlin Tech Limited | Vertical external cavity surface emitting laser with improved external mirror structure |
WO2021134087A1 (en) | 2019-12-26 | 2021-07-01 | Acucela Inc. | Optical coherence tomography patient alignment system for home based ophthalmic applications |
US20230139279A1 (en) * | 2020-01-07 | 2023-05-04 | Sony Group Corporation | Light emitting element |
CA3107172C (en) * | 2020-01-30 | 2024-02-13 | Thorlabs Quantum Electronics, Inc. | Tunable laser assembly |
US10959613B1 (en) | 2020-08-04 | 2021-03-30 | Acucela Inc. | Scan pattern and signal processing for optical coherence tomography |
CN116390683A (zh) | 2020-08-14 | 2023-07-04 | 奥克塞拉有限公司 | 用于光学相干断层扫描a扫描去弯曲的系统和方法 |
JPWO2022038671A1 (de) * | 2020-08-18 | 2022-02-24 | ||
US11393094B2 (en) | 2020-09-11 | 2022-07-19 | Acucela Inc. | Artificial intelligence for evaluation of optical coherence tomography images |
AU2021352417A1 (en) | 2020-09-30 | 2023-04-06 | Acucela Inc. | Myopia prediction, diagnosis, planning, and monitoring device |
JP2023545513A (ja) * | 2020-10-14 | 2023-10-30 | エクセリタス テクノロジーズ コーポレーション | 歪み補償型半導体dbrを伴う調整可能なvcsel |
JP2024511085A (ja) | 2021-03-24 | 2024-03-12 | アキュセラ インコーポレイテッド | 軸長測定モニタ |
WO2023154719A2 (en) * | 2022-02-11 | 2023-08-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Weak index guiding of interband cascade lasers bonded to gaas substrates |
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- 2014-03-14 CN CN201480024956.3A patent/CN105188540B/zh active Active
- 2014-03-14 EP EP14763284.8A patent/EP2967468A4/de not_active Withdrawn
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Also Published As
Publication number | Publication date |
---|---|
EP3289979B1 (de) | 2023-03-01 |
US10263394B2 (en) | 2019-04-16 |
CA2905537C (en) | 2021-09-14 |
EP2967468A4 (de) | 2017-03-08 |
US9774166B2 (en) | 2017-09-26 |
EP3289979A2 (de) | 2018-03-07 |
WO2014144866A3 (en) | 2014-11-20 |
CA2905537A1 (en) | 2014-09-18 |
WO2014144866A2 (en) | 2014-09-18 |
JP6553019B2 (ja) | 2019-07-31 |
WO2014144998A2 (en) | 2014-09-18 |
CN105188540B (zh) | 2019-03-08 |
US20140268169A1 (en) | 2014-09-18 |
JP2016513889A (ja) | 2016-05-16 |
US20170373469A1 (en) | 2017-12-28 |
CN105188540A (zh) | 2015-12-23 |
WO2014144998A3 (en) | 2014-11-13 |
EP2967468A2 (de) | 2016-01-20 |
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