EP2727154A2 - Verfahren und vorrichtung zur detektion von infrarotstrahlung mit verstärkung - Google Patents

Verfahren und vorrichtung zur detektion von infrarotstrahlung mit verstärkung

Info

Publication number
EP2727154A2
EP2727154A2 EP12804913.7A EP12804913A EP2727154A2 EP 2727154 A2 EP2727154 A2 EP 2727154A2 EP 12804913 A EP12804913 A EP 12804913A EP 2727154 A2 EP2727154 A2 EP 2727154A2
Authority
EP
European Patent Office
Prior art keywords
layer
photodetector
electrode
ito
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP12804913.7A
Other languages
English (en)
French (fr)
Other versions
EP2727154B1 (de
EP2727154A4 (de
Inventor
Franky So
Do Young Kim
Jae Woong LEE
Bhabendra K. Pradhan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Florida
University of Florida Research Foundation Inc
Nanoholdings LLC
Original Assignee
University of Florida
University of Florida Research Foundation Inc
Nanoholdings LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Florida, University of Florida Research Foundation Inc, Nanoholdings LLC filed Critical University of Florida
Publication of EP2727154A2 publication Critical patent/EP2727154A2/de
Publication of EP2727154A4 publication Critical patent/EP2727154A4/de
Application granted granted Critical
Publication of EP2727154B1 publication Critical patent/EP2727154B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
    • H01L31/143—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L2031/0344—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Infrared (IR) light is not visible to the human eye, but an IR photodetector can detect IR light.
  • IR photodetectors have a wide range of potential applications, including night vision, range finding, security, and semiconductor wafer inspections.
  • IR can refer to radiation having wavelengths longer than visible light (>0.7 ⁇ ) up to about 14 ⁇ .
  • Embodiments of the subject invention relate to a photodetector capable of producing gain (i.e., a photodetector with gain).
  • the photodetector can be, for example, an infrared (IR) photodetector. That is, the photodetector can be sensitive to at least a portion of light in the IR region.
  • Embodiments of the subject invention also pertain to an IR-to-visible upconversion device.
  • the IR-to-visible upconversion device can include a photodetector and an organic light-emitting device (OLED).
  • a photodetector with gain can include a first electrode, a light sensitizing layer on the first electrode, an electron blocking/tunneling layer on the light sensitizing layer, and a second electrode on the electron blocking/tunneling layer.
  • a method of fabricating a photodetector with gain can include: forming a first electrode; forming a light sensitizing layer on the first electrode; forming an electron blocking/tunneling layer on the light sensitizing layer; and forming a second electrode on the electron blocking/tunneling layer.
  • an IR-to-visible upconversion device can include a photodetector with gain and an OLED coupled to the photodetector with gain.
  • the photodetector with gain can include a first electrode, a light sensitizing layer on the first electrode, an electron blocking/tunneling layer on the light sensitizing layer, and a second electrode on the electron blocking/tunneling layer.
  • a method of forming an IR-to-visible upconversion device can include: forming a photodetector with gain; forming an OLED; and coupling the OLED to the photodetector with gain.
  • Forming the photodetector with gain can include: forming a first electrode; forming a light sensitizing layer on the first electrode; forming an electron blocking/tunneling layer on the light sensitizing layer; and forming a second electrode on the electron blocking/tunneling layer.
  • Figure 1A shows an absorption spectrum of PbS nanocrystals which can be used as an IR sensitizing layer according to an embodiment of the subject invention.
  • Figure IB shows a schematic perspective view of a photodetector according to an embodiment of the subject invention.
  • Figure 2A shows a schematic energy band diagram of a photodetector, according to an embodiment of the subject invention, under applied voltage in the dark.
  • Figure 2B shows a schematic energy band diagram of a photodetector, according to an embodiment of the subject invention, under applied voltage and IR irradiation.
  • Figure 3A shows a schematic energy band diagram of a photodetector according to an embodiment of the subject invention.
  • Figure 3B shows current vs. voltage characteristics for a photodetector according to an embodiment of the subject invention under dark and photo (1240 nm infrared illumination) conditions.
  • Figure 4A shows a plot of gain as a function of applied voltage for a photodetector according to an embodiment of the subject invention.
  • Figure 4B shows a plot of detectivity as a function of applied voltage on a photodetector according to an embodiment of the subject invention.
  • Figure 5A shows a schematic energy band diagram of an infrared-to-visible upconversion device according to an embodiment of the subject invention.
  • Figure 5B shows a schematic energy band diagram of an infrared-to-visible upconversion device according to an embodiment of the subject invention.
  • Figure 5C shows a schematic energy band diagram of an infrared-to-visible upconversion device according to an embodiment of the subject invention.
  • the photodetector is capable of absorbing the light to which it is sensitive and generating a carrier.
  • the term “not sensitive” or “insensitive” is used herein, in conjunction with describing a photodetector not being sensitive or being insensitive to a certain type of light or to photons having a wavelength of a given value or within a given range, it is understood that the photodetector is not able to absorb the light to which it is not sensitive and generate a carrier from the absorption of the light.
  • Embodiments of the subject invention relate to a photodetector capable of producing gain (i.e., a photodetector with gain).
  • the photodetector can be, for example, an infrared (IR) photodetector. That is, the photodetector can be sensitive to at least a portion of light in the IR region. In a specific embodiment, the photodetector is sensitive to at least a portion of the wavelength range from 0.7 ⁇ to 14 ⁇ , inclusive or non-inclusive. In certain embodiments, the photodetector can be sensitive to IR light and can be insensitive to visible light.
  • IR infrared
  • a light sensitizing layer of the photodetector can be insensitive to at least a portion of the wavelength range from 0.4 ⁇ to 0.7 ⁇ .
  • a light sensitizing layer of the photodetector can be insensitive to the entire wavelength range from 0.4 ⁇ to 0.7 ⁇ , inclusive or non-inclusive.
  • a photodetector 10 can include a first electrode 30, a light sensitizing layer 50, an electron blocking/tunneling layer 60, and a second electrode 70.
  • the photodetector 10 can also optionally include a substrate 20 and/or a hole blocking layer 40.
  • the substrate 20 can be, for example, a glass substrate.
  • Figure 1 B includes labels of certain materials for the various components, these are intended for demonstrative purposes only and embodiments of the subject invention are not limited thereto.
  • the first electrode 30 can be a cathode, and the second electrode 70 can be an anode.
  • the first electrode 30 can be an anode
  • the second electrode 70 can be a cathode.
  • the first electrode 30 and/or the second electrode 70 can be transparent to at least a portion of visible and/or at least a portion of IR light, though embodiments are not limited thereto.
  • the first electrode 30 can include one or more of the following materials: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the first electrode 30 can be an ITO electrode.
  • the second electrode 70 can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the second electrode 70 can be a silver electrode.
  • the photodetector 10 can be an IR photodetector and the light sensitizing layer 50 can be an IR sensitizing layer. That is, the IR sensitizing layer can be sensitive to at least a portion of light in the IR range.
  • the light sensitizing layer 50 can include, for example, one or more of the following materials: PbS nanocrystals (quantum dots), PbSe nanocrystals (quantum dots), PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Ge, and GaAs.
  • Figure 1A shows an absorption spectrum for PbS nanocrystals as a light sensitizing layer 50.
  • the PbS nanocrystal light sensitizing layer shows absorbance in at least a portion of the IR region.
  • the electron blocking/tunneling layer can be a l,l-bis[(di-4- tolylamino)phenyl]cyclohexane (TAPC)/Mo0 3 stack layer.
  • the TAPC layer can have a thickness of, for example, 0 nm to 100 nm.
  • the Mo0 3 layer can have a thickness of, for example, 0 nm to 100 nm.
  • the photodetector can include a hole blocking layer, and the hole blocking layer can include one or more of the following materials: ZnO, naphthalene tetracarboxylic anhydride (NTCDA), 2,9-Dimethyl-4,7-diphenyl-l ,10-phenanthroline (BCP), p-bis(triphenylsilyl)benzene (UGH2), 4,7-diphenyl-l,10-phenanthroline (BPhen), tris-(8- hydroxy quinoline) aluminum (Alq3), 3,5'-N,N'-dicarbazole-benzene (mCP), C60, tris[3-(3- pyridyl)-mesityl]borane (3TPYMB), and Ti0 2 .
  • ZnO naphthalene tetracarboxylic anhydride
  • BCP 2,9-Dimethyl-4,7-diphenyl-l ,10-phenanthroline
  • BCP
  • the photodetector can include a first electrode, light sensitizing layer on the first electrode, an electron blocking/tunneling layer on the light sensitizing layer, and a second electrode on the electron blocking/tunneling layer.
  • the electron blocking/tunneling layer can be, for example, a TAPC/Mo0 3 stack layer, and the TAPC/M0O 3 stack layer can be positioned such that the TAPC layer is in direct contact with the light sensitizing layer and the M0O 3 layer is in direct contact with the second electrode.
  • the light sensitizing layer can be, for example, an IR sensitizing layer and can include, e.g., PbS quantum dots.
  • the photodetector can include a hole blocking layer on the first electrode and under the light sensitizing layer.
  • Figures 2A and 2B demonstrate the operating principle of a photodetector according to an embodiment of the subject invention.
  • a bias is applied in the dark (i.e., no visible and/or IR light)
  • holes are blocked from the first electrode due to hole blocking layer
  • electrons are blocked from second electrode due to the electron blocking layer.
  • the photodetector is irradiated with light (e.g., IR light)
  • the light sensitizing layer e.g., an IR sensitizing layer
  • the electrons flow to the first electrode due to the applied bias.
  • the holes are accumulated in bulk trap sites of the electron blocking/tunneling layer, and the accumulated holes reduce the barrier width of the electron blocking/tunneling layer.
  • the electron tunneling from the second electrode to the light sensitizing layer is enhanced significantly, thus producing gain.
  • Figure 3A shows a schematic band diagram of a photodetector according to an embodiment of subject invention
  • Figure 3B shows the dark and photo current density- voltage (J-V) characteristics for a photodetector according to an embodiment of the subject invention.
  • Figure 4A shows a plot of the gain versus the applied voltage for a photodetector according to the subject invention
  • Figure 4B shows a plot of the detectivity versus the applied voltage for a photodetector according to an embodiment of the subject invention.
  • a very high gain can be seen, including a gain of more than 150 at an applied bias of -20 V.
  • the detectivity is saturated to more than 5 x 10 Jones at values of the applied voltage of less than - 18 V.
  • a photodetector exhibits gain at applied bias (i.e., it is a photodetector with gain).
  • the photodetector can exhibit a gain of, for example, about 150 at an applied bias of -20 V.
  • the photodetector can exhibit a gain any of the following values or ranges: 2, about 2, at least 2, 3, about 3, at least 3, ... , 160, about 1 0, at least 160 (where the represents each number between 3 and 160, "about” each number between 3 and 160, and "at least” each number between 3 and 160), or any range having a first endpoint of any number from 2 to 159 and a second endpoint of any number from 3 to 160.
  • the gain values and ranges of the preceding sentence can be exhibited at any applied voltage value from -30 V to 30 V.
  • inventions of the subject invention also pertain to an IR-to-visible upconversion device 500.
  • the IR-to-visible upconversion device 500 can include a photodetector 10 and a light-emitting device (LED) 200.
  • the LED 200 can be an organic LED (OLED).
  • the IR-to-visible upconversion device 500 can be an IR-to-visible upconversion device with gain, and the photodetector 10 can be a photodetector with gain.
  • the IR-to-visible upconversion device can include a photodetector with gain, as illustrated in Figures 1A-1B, 2A-2B, 3A-3B, and 4A-4B and/or as described in connection with the photodetectors of Figures 1A-1B, 2A-2B, 3A-3B, and 4A-4B.
  • the OLED 200 can include at least one electrode, a hole transporting layer (HTL), a light emitting layer (LEL), and an electron transporting layer (ETL).
  • HTL hole transporting layer
  • LEL light emitting layer
  • ETL electron transporting layer
  • At least one electrode of the OLED 200 can be transparent to at least a portion of visible light and/or at least a portion of IR light, though embodiments are not limited thereto.
  • Each electrode of the OLED 200 can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, CsC0 3 /ITO, and a Mg:Ag/Alq3 stack layer, though embodiments are not limited thereto.
  • the HTL of the OLED 200 can include one or more of the following materials: NPD, TAPC, TFB, TPD, and diamine derivative, ⁇ though embodiments are not limited thereto.
  • the LEL of the OLED 200 can include one or more of the following materials: Iridium tris(2-phenylpyidine) (Ir(ppy)3), [2-methoxy-5-(2- ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV), Tris-(8-quinolinolato) aluminum) (Alq3), and bis[(4,6-di-fluorophenyl)-pyridinate-]picolinate (Flrpic), though embodiments are not limited thereto.
  • the ETL of the OLED 200 can include one or more of the following materials: BCP, Bphen, 3TPYMB, and Alq3, though embodiments are not limited thereto.
  • the electrode of the OLED 200 is a Mg:Ag/Alq3 stack layer.
  • the Mg:Ag layer of the Mg:Ag/Alq3 stack layer can have a composition of, for example, Mg:Ag (10: 1) and can have a thickness of, for example, less than 30nm.
  • the Alq3 layer of the Mg:Ag/Alq3 stack layer can have a thickness of, for example, from 0 nm to 200 nm.
  • the photodetector 10 can be a photodetector with gain as described herein, though only one electrode need be present. That is, the photodetector 10 can include at least one electrode, a light sensitizing layer, and an electron blocking/tunneling layer. The photodetector 10 can also optionally include a substrate and/or a hole blocking layer.
  • the electrode can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the photodetector 10 can be an IR photodetector and the light sensitizing layer can be an IR sensitizing layer.
  • the light sensitizing layer can include, for example, one or more of the following materials: PbS nanocrystals (quantum dots), PbSe nanocrystals (quantum dots), PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Ge, and GaAs.
  • the electron blocking/tunneling layer can be a TAPC/Mo0 3 stack layer.
  • the TAPC layer can have a thickness of, for example, 0 nm to 100 nm.
  • the Mo0 3 layer can have a thickness of, for example, 0 nm to 100 nm.
  • the photodetector can include a hole blocking layer, and the hole blocking layer can include one or more of the following materials: ZnO, NTCDA, BCP, UGH2, BPhen, Alq3, mCP, 3TPYMB, and Ti0 2 .
  • the IR-to-visible upconversion device 500 can also include an interconnecting part 100 between the photodetector 10 and the OLED 200.
  • the interconnecting part 100 can be positioned such that the electron blocking/tunneling layer of the photodetector 10 is closer than the light sensitizing layer is to the interconnecting part 100, and the HTL of the OLED 200 is closer than the ETL is to the interconnecting part 100.
  • the photodetector 10 can include an electrode under the light sensitizing layer, and that electrode can be an anode.
  • the OLED 200 can include an electrode on the ETL, and that electrode can be a cathode.
  • the interconnecting part 100 can include an HBL 110 and an EBL 120.
  • the lowest unoccupied molecular orbital (LUMO) of the HBL 110 of the interconnecting part 100 can be close to the highest occupied molecular orbital (HOMO) of the EBL 120 of the interconnecting part 100.
  • LUMO unoccupied molecular orbital
  • HOMO highest occupied molecular orbital
  • the LUMO of the HBL 110 of the interconnecting part 100 and the HOMO of the EBL 120 of the interconnecting part 100 can be no more than 1 eV apart.
  • the LUMO of the IIBL 110 of the interconnecting part 100 and the HOMO of the EBL 120 of the interconnecting part 100 can be no more than 0.5 eV apart. That is, the energy difference between the HOMO of the EBL 120 of the interconnecting part 100 and the LUMO of the HBL 110 of the interconnecting part 100 can be 0.5 eV or less.
  • the interconnecting part 100 can be positioned within the IR-to-visible upconversion device 500 such that the HBL 120 of the interconnecting part 100 can be adjacent to the photodetector 10 and the EBL 120 of the interconnecting part 100 can be adjacent to the OLED 200.
  • the photodetector 10 can include a second electrode 70 on its EBL/tunneling layer, and the HBL 120 of the interconnecting part 100 can be in direct contact with the second electrode 70 of the photodetector 10.
  • the second electrode 70 of the photodetector 10 can be a cathode.
  • the second electrode 70 of the photodetector 10 can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the second electrode 70 of the photodetector 10 can be a silver electrode.
  • the interconnecting part does not necessarily include any additional components beyond the HBL 110 and the EBL 120.
  • additional components may be present (e.g., one or more electrodes or substrates).
  • the IR-to-visible upconversion device 500 does not include an interconnecting part 100, and the photodetector 10 is positioned directly adjacent to the OLED 200.
  • the OLED 200 can be positioned such that the ETL of the OLED 200 is closer to the light sensitizing layer of the photodetector 10 than it is to the electron blocking/tunneling layer of the photodetector 10.
  • the photodetector can include a hole blocking layer adjacent to the light sensitizing layer, and the ETL of the OLED 200 can be positioned adjacent to and in contact with the hole blocking layer of the photodetector 10.
  • the photodetector 10 can include an electrode adjacent to and in contact with the electron blocking/tunneling layer, and the OLED 200 can include an electrode adjacent to and in contact with the HTL.
  • the electrode of the photodetector 10 can be, for example, a cathode, and the electrode of the OLED 200 can be, for example, an anode.
  • a substrate (not shown) can also be present.
  • the IR-to-visible upconversion device 500 can be flipped or turned around and still function properly.
  • the substrate can be adjacent to the anode in Figure 5B and adjacent to the cathode in Figure 5C, such that Figure 5B shows a similar configuration to that of Figure 5C but with the IR-to- visible upconversion device 500 turned around on the substrate.
  • the substrate can be adjacent to the anode or the cathode.
  • an IR-to-visible upconversion device 500 can include an interconnecting part 100 (as shown in Figure 5A), and the substrate can be adjacent to the anode.
  • IR light can be incident on the IR-to-visible upconversion device 500 from any direction, and visible light can be emitted from the IR-to-visible upconversion device 500 in any direction.
  • the OLED 200 can be transparent to at least a portion of light in the IR spectrum, though embodiments are not limited thereto.
  • the photodetector 10 can be transparent to at least a portion of light in the visible spectrum, though embodiments are not limited thereto.
  • the IR-to-visible upconversion device 500 functions by emitting visible light from the OLED 200 when the photodetector 10 absorbs IR light. That is, the light sensitizing layer (e.g., an IR sensitizing layer) of the photodetector 10 absorbs IR light, causing carriers to flow. The carriers flow to the OLED 200, either directly or via an interconnecting part 100, causing the LEL of the OLED 200 to emit visible light.
  • the IR-to-visible upconversion device 500 can include a photodetector 10 with gain and can advantageously exhibit gain.
  • Embodiments of the subject invention also relate to methods of fabricating a photodetector with gain.
  • the photodetector can be, for example, an IR photodetector.
  • a method of fabricating a photodetector with gain can include: forming a light sensitizing layer on a first electrode, forming an electron blocking/tunneling layer on the light sensitizing layer, and forming a second electrode on the electron blocking/tunneling layer.
  • the method can also optionally include forming the first electrode on a substrate and/or forming a hole blocking layer on the first electrode such that the light sensitizing layer is formed on the hole blocking layer.
  • the substrate can be, for example, a glass substrate.
  • the first electrode can be a cathode, and the second electrode can be an anode. In an alternative embodiment, the first electrode can be an anode, and the second electrode can be a cathode. In certain embodiments, the first electrode and/or the second electrode can be transparent to at least a portion of visible and/or at least a portion of IR light, though embodiments are not limited thereto.
  • the first electrode can include one or more of the following materials: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CSCO 3 /ITO.
  • the second electrode can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the photodetector can be an IR photodetector and the light sensitizing layer can be an IR sensitizing layer.
  • the light sensitizing layer can include, for example, one or more of the following materials: PbS nanocrystals (quantum dots), PbSe nanocrystals (quantum dots), PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Ge, and GaAs.
  • the electron blocking/tunneling layer can be a TAPC/M0O3 stack layer.
  • the TAPC layer can be formed to a thickness of, for example, 0 nm to 100 nm.
  • the M0O 3 layer can be formed to a thickness of, for example, 0 nm to 100 nm.
  • the method can include forming a hole blocking layer, and the hole blocking layer can include one or more of the following materials: ZnO, NTCDA, BCP, UGH2, BPhen, Alq3, 3mCP, 3TPYMB, and Ti0 2 .
  • the method of fabricating a photodetector can include: forming a light sensitizing layer on a first electrode, forming an electron blocking/tunneling layer on the light sensitizing layer, and forming a second electrode on the electron blocking/tunneling layer.
  • the electron blocking/tunneling layer can be, for example, a TAPC/Mo0 3 stack layer, and the TAPC/M0O 3 stack layer can be formed such that the TAPC layer is formed directly on and in contact with the light sensitizing layer and the M0O 3 layer is formed directly on and in contact with the TAPC layer.
  • the second electrode can then be formed directly on and in contact with the M0O 3 layer of the TAPC/M0O 3 stack layer.
  • the light sensitizing layer can be, for example, an IR sensitizing layer and can include, e.g., PbS quantum dots.
  • the method can include forming a hole blocking layer on the first electrode such that the light sensitizing layer is formed directly on and in contact with the hole blocking layer.
  • Embodiments of the subject invention also relate to methods of detecting radiation using a photodetector with gain.
  • the photodetector can be, for example, an IR photodetector such that the method can detect IR radiation.
  • a method of using a photodetector with gain to detect radiation can include: providing a photodetector with gain, wherein the photodetector includes a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode.
  • the photodetector can also optionally include a substrate and/or a hole blocking layer.
  • the substrate can be, for example, a glass substrate.
  • the first electrode can be a cathode, and the second electrode can be an anode. In an alternative embodiment, the first electrode can be an anode, and the second electrode can be a cathode. In certain embodiments, the first electrode and/or the second electrode can be a transparent electrode.
  • the first electrode can include one or more of the following materials: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the second electrode can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the photodetector can be an IR photodetector and the light sensitizing layer can be an IR sensitizing layer.
  • the light sensitizing layer can include, for example, one or more of the following materials: PbS nanocrystals (quantum dots), PbSe nanocrystals (quantum dots), PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Ge, and GaAs.
  • the electron blocking/tunneling layer can be a TAPC/Mo0 3 stack layer.
  • the TAPC layer can be formed to a thickness of, for example, 0 nm to 100 nm.
  • the Mo0 3 layer can be formed to a thickness of, for example, 0 nm to 100 nm.
  • the photodetector can include a hole blocking layer, and the hole blocking layer can include one or more of the following materials: ZnO, NTCDA, BCP, UGH2, BPhen, Alq3, 3mCP, 3TPYMB, and Ti0 2 .
  • the photodetector can include: a light sensitizing layer on a first electrode, an electron blocking/tunneling layer on the light sensitizing layer, and a second electrode on the electron blocking/tunneling layer.
  • the electron blocking/tunneling layer can be, for example, a TAPC/M0O 3 stack layer, and the TAPC/M0O 3 stack layer can be positioned such that the TAPC layer is directly on and in contact with the light sensitizing layer and the Mo0 3 layer is directly on and in contact with the TAPC layer.
  • the second electrode can then be directly on and in contact with the M0O 3 layer of the TAPC/M0O 3 stack layer.
  • the light sensitizing layer can be, for example, an IR sensitizing layer and can include, e.g., PbS quantum dots.
  • the photodetector can include a hole blocking layer on the first electrode and under the light sensitizing layer.
  • Embodiments of the subject invention also relate to methods of forming an IR- to- visible upconversion device.
  • the IR-to-visible upconversion device can be an IR-to-visible upconversion device with gain
  • the photodetector can be a photodetector with gain.
  • a method of fabricating an IR-to-visible upconversion device can include: forming a photodetector with gain; forming an LED; and coupling the LED and the photodetector with gain.
  • the LED can be an OLED.
  • Forming the OLED can include: forming at least one electrode, forming a hole transporting layer (HTL), forming a light emitting layer (LEL), and forming an electron transporting layer (ETL).
  • HTL hole transporting layer
  • LEL light emitting layer
  • ETL electron transporting layer
  • At least one electrode of the OLED can be transparent to at least a portion of visible and/or at least a portion of IR light, though embodiments are not limited thereto.
  • Each electrode of the OLED can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, CsC0 3 /ITO, and a Mg:Ag/Alq3 stack layer, though embodiments are not limited thereto.
  • the HTL of the OLED can include one or more of the following materials: NPD, TAPC, TFB, TPD, and diamine derivative, though embodiments are not limited thereto.
  • the LEL of the OLED can include one or more of the following materials: Ir(ppy)3, MEH-PPV, Alq3, and Flrpic, though embodiments are not limited thereto.
  • the ETL of the OLED can include one or more of the following materials: BCP, Bphen, 3TPYMB, and Alq3, though embodiments are not limited thereto.
  • the electrode of the OLED is a Mg:Ag/Alq3 stack layer.
  • the Mg:Ag layer of the Mg:Ag/Alq3 stack layer can have a composition of, for example, Mg:Ag (10: 1) and can be formed to a thickness of, for example, less than 30nm.
  • the Alq3 layer of the Mg:Ag/Alq3 stack layer can be formed to a thickness of, for example, from 0 nni to 200 nm.
  • the photodetector can be a photodetector with gain and can be formed as described herein, though only one electrode need be formed. That is, forming the photodetector can include forming at least one electrode, forming a light sensitizing layer, and forming an electron blocking/tunneling layer. Forming the photodetector can also optionally include proving a substrate and/or forming a hole blocking layer.
  • the electrode can be formed of one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the photodetector can be an IR photodetector and the light sensitizing layer can be an IR sensitizing layer.
  • the light sensitizing layer can be formed of, for example, one or more of the following materials: PbS nanocrystals (quantum dots), PbSe nanocrystals (quantum dots), PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Ge, and GaAs.
  • the electron blocking/tunneling layer can be a TAPC/M0O3 stack layer.
  • the TAPC layer can be formed to a thickness of, for example, 0 nm to 100 nm.
  • the Mo0 3 layer can be formed to a thickness of, for example, 0 nm to 100 nm.
  • forming the photodetector can include forming a hole blocking layer, and the hole blocking layer can include one or more of the following materials: ZnO, NTCDA, BCP, UGH2, BPhen, Alq3, mCP, 3TPYMB, and Ti0 2 .
  • coupling the photodetector with gain to the OLED can include coupling the photodetector with gain to an interconnecting part and coupling the OLED to the interconnecting part.
  • the photodetector can be coupled to the interconnecting part such that the electron blocking/tunneling layer of the photodetector is closer than the light sensitizing layer is to the interconnecting part.
  • the OLED can be coupled to the interconnecting part such that the HTL of the OLED is closer than the ETL is to the interconnecting part.
  • the photodetector can include an electrode under the light sensitizing layer, and that electrode can be an anode.
  • the OLED can include an electrode on the ETL, and that electrode can be a cathode.
  • coupling the photodetector with gain to the OLED can include coupling the photodetector with gain directly to the OLED.
  • the photodetector with gain can be coupled to the OLED such that the ETL of the OLED is closer to the light sensitizing layer of the photodetector than it is to the electron blocking/tunneling layer of the photodetector.
  • the photodetector can include a hole blocking layer adjacent to the light sensitizing layer, and the photodetector with gain can be coupled to the OLED such that the ETL of the OLED is adjacent to and in contact with the hole blocking layer of the photodetector.
  • the photodetector can include an electrode adjacent to and in contact with the electron blocking/tunneling layer, and the OLED can include an electrode adjacent to and in contact with the HTL.
  • the electrode of the photodetector can be, for example, a cathode, and the electrode of the OLED can be, for example, an anode.
  • Embodiments of the subject invention also relate to methods of upconverting IR radiation to visible radiation using an IR-to-visible upconversion device.
  • the IR-to-visible upconversion device can include a photodetector and an LED.
  • the LED can be an OLED.
  • the IR-to-visible upconversion device can be an IR-to-visible upconversion device with gain, and the photodetector can be a photodetector with gain.
  • the OLED can include at least one electrode, a hole transporting layer (HTL), a light emitting layer (LEL), and an electron transporting layer (ETL).
  • HTL hole transporting layer
  • LEL light emitting layer
  • ETL electron transporting layer
  • At least one electrode of the OLED can be transparent to at least a portion of visible and/or at least a portion of IR light, though embodiments are not limited thereto.
  • Each electrode of the OLED can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, CsC0 3 /ITO, and a Mg:Ag/Alq3 stack layer, though embodiments are not limited thereto.
  • the HTL of the OLED can include one or more of the following materials: NPD, TAPC, TFB, TPD, and diamine derivative, though embodiments are not limited thereto.
  • the LEL of the OLED can include one or more of the following materials: Ir(ppy)3, MEH-PPV, Alq3, and Flrpic, though embodiments are not limited thereto.
  • the ETL of the OLED can include one or more of the following materials: BCP, Bphen, 3TPYMB, and Alq3, though embodiments are not limited thereto.
  • the electrode of the OLED is a Mg:Ag/Alq3 stack layer.
  • the Mg:Ag layer of the Mg:Ag/Alq3 stack layer can have a composition of, for example, Mg:Ag (10: 1) and can have a thickness of, for example, less than 30nm.
  • the Alq3 layer of the Mg:Ag/Alq3 stack layer can have a thickness of, for example, from 0 nm to 200 nm.
  • the photodetector can be a photodetector with gain as described herein, though only one electrode need be present. That is, the photodetector can include at least one electrode, a light sensitizing layer, and an electron blocking/tunneling layer. The photodetector can also optionally include a substrate and/or a hole blocking layer.
  • the electrode can include one or more of the following materials: ITO, IZO, ATO, AZO, silver, calcium, magnesium, gold, aluminum, carbon nanotubes, silver nanowire, LiF/Al/ITO, Ag/ITO, and CsC0 3 /ITO.
  • the photodetector can be an IR photodetector and the light sensitizing layer can be an IR sensitizing layer.
  • the light sensitizing layer can include, for example, one or more of the following materials: PbS nanocrystals (quantum dots), PbSe nanocrystals (quantum dots), PCTDA, SnPc, SnPc:C60, AlPcCl, AlPcCl:C60, TiOPc, TiOPc:C60, PbSe, PbS, InAs, InGaAs, Si, Gc, and GaAs.
  • the electron blocking/tunneling layer can be a TAPC/Mo0 3 stack layer.
  • the TAPC layer can have a thickness of, for example, 0 nm to 100 nm.
  • the M0O 3 layer can have a thickness of, for example, 0 nm to 100 nm.
  • the photodetector can include a hole blocking layer, and the hole blocking layer can include one or more of the following materials: ZnO, NTCDA, BCP, UGH2, BPhen, Alq3, mCP, 3TPYMB, and Ti0 2 .
  • the IR-to-visible upconversion device can also include an interconnecting part between the photodetector and the OLED.
  • the interconnecting part can be positioned such that the electron blocking/tunneling layer of the photodetector is closer than the light sensitizing layer is to the interconnecting part, and the HTL of the OLED is closer than the ETL is to the interconnecting part.
  • the photodetector can include an electrode under the light sensitizing layer, and that electrode can be an anode.
  • the OLED can include an electrode on the ETL, and that electrode can be a cathode.
  • the IR-to-visible upconversion device does not include an interconnecting part, and the photodetector is positioned directly adjacent to the OLED.
  • the OLED can be positioned such that the ETL of the OLED is closer to the light sensitizing layer of the photodetector than it is to the electron blocking/tunneling layer, of the photodetector.
  • the photodetector can include a hole blocking layer adjacent to the light sensitizing layer, and the ETL of the OLED can be positioned adjacent to and in contact with the hole blocking layer of the photodetector.
  • the photodetector can include an electrode adjacent to and in contact with the electron blocking/tunneling layer, and the OLED can include an electrode adjacent to and in contact with the HTL.
  • the electrode of the photodetector can be, for example, a cathode, and the electrode of the OLED can be, for example, an anode.
  • the IR-to-visible upconversion device can be flipped or turned around and still function properly.
  • the OLED can be transparent to at least a portion of light in the IR spectrum, though embodiments are not limited thereto.
  • the photodetector can be transparent to at least a portion of light in the visible spectrum, though embodiments are not limited thereto.
  • the IR-to-visible upconversion device upconverts IR light to visible light.
  • the IR-to- visible upconversion emits visible light from the OLED when the photodetector absorbs IR light. That is, the light sensitizing layer (e.g., an IR sensitizing layer) of the photodetector absorbs IR light, causing carriers to flow. The carriers flow to the OLED, either directly or via an interconnecting part, causing the LEL of the OLED to emit visible light.
  • the IR-to- visible upconversion device can include a photodetector with gain and can advantageously exhibit gain.
  • a photodetector was fabricated on a glass substrate.
  • the photodetector included an ITO first electrode, a ZnO hole blocking layer on the first electrode, a PbS quantum dot light sensitizing layer on the hole blocking layer, a TAPC/M0O 3 stack electron blocking/tunneling layer on the light sensitizing layer, and a second electrode on the electron blocking/tunneling layer.
  • the PbS quantum dot light sensitizing layer had the absorbance spectrum shown in Figure 1A.
  • the photodetector displayed the J-V characteristic curves (for dark and IR illumination at 1240 nm and 0.302 W/cm 2 ) shown in Figure 3B. Additionally, the photodetector exhibited the gain and detectivity, as functions of applied voltage, shown in Figures 4A and 4B, respectively.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
EP12804913.7A 2011-06-30 2012-07-02 Verfahren und vorrichtung zur detektion von infrarotstrahlung mit verstärkung Active EP2727154B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161503317P 2011-06-30 2011-06-30
PCT/US2012/045272 WO2013003850A2 (en) 2011-06-30 2012-07-02 A method and apparatus for detecting infrared radiation with gain

Publications (3)

Publication Number Publication Date
EP2727154A2 true EP2727154A2 (de) 2014-05-07
EP2727154A4 EP2727154A4 (de) 2015-03-04
EP2727154B1 EP2727154B1 (de) 2019-09-18

Family

ID=47424832

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12804913.7A Active EP2727154B1 (de) 2011-06-30 2012-07-02 Verfahren und vorrichtung zur detektion von infrarotstrahlung mit verstärkung

Country Status (11)

Country Link
US (2) US10134815B2 (de)
EP (1) EP2727154B1 (de)
JP (2) JP6502093B2 (de)
KR (1) KR102059208B1 (de)
CN (1) CN103733355B (de)
AU (1) AU2012275060A1 (de)
BR (1) BR112013033122A2 (de)
CA (1) CA2840498A1 (de)
MX (1) MX2013015214A (de)
RU (1) RU2014102650A (de)
WO (1) WO2013003850A2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG175565A1 (en) 2006-09-29 2011-11-28 Univ Florida Method and apparatus for infrared detection and display
US8498695B2 (en) 2006-12-22 2013-07-30 Novadaq Technologies Inc. Imaging system with a single color image sensor for simultaneous fluorescence and color video endoscopy
US9349970B2 (en) 2009-09-29 2016-05-24 Research Triangle Institute Quantum dot-fullerene junction based photodetectors
US9054262B2 (en) 2009-09-29 2015-06-09 Research Triangle Institute Integrated optical upconversion devices and related methods
JP5778261B2 (ja) 2010-05-24 2015-09-16 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク．Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｔｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． 赤外光アップコンバージョンデバイス上に電荷遮断層を設けるための方法および装置
RU2014102650A (ru) 2011-06-30 2015-08-10 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Усиливающий инфракрасный фотодетектор и его применение для обнаружения ик-излучения
JP6147860B2 (ja) 2012-09-27 2017-06-14 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 銀ナノ構造を作製するための方法及び同方法に有用なコポリマー
KR20150109450A (ko) * 2013-01-25 2015-10-01 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. 용액 처리된 pbs 광검출기를 이용한 신규 ir 이미지 센서
RU2523097C1 (ru) * 2013-02-26 2014-07-20 Гариф Газизович Акчурин Сверхширокополосный вакуумный туннельный фотодиод для детектирования ультрафиолетового, видимого и инфракрасного оптического излучения и способ для его реализации
US20160254101A1 (en) * 2013-04-12 2016-09-01 Stephen R. Forrest Organic photosensitive devices with exciton-blocking charge carrier filters
CN103399058B (zh) * 2013-08-22 2015-01-21 武汉大学 一种高灵敏富勒烯光电化学探针及其制备方法
JP2015195333A (ja) * 2014-03-19 2015-11-05 株式会社東芝 有機光電変換素子および撮像装置
CA2952321A1 (en) * 2014-06-16 2015-12-23 B.G. Negev Technologies And Applications Ltd., At Ben-Gurion University Swir to visible image up-conversion integrated device
KR20180018660A (ko) 2015-06-11 2018-02-21 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 단분산, ir-흡수 나노입자, 및 관련 방법 및 장치
WO2017006520A1 (ja) * 2015-07-08 2017-01-12 パナソニックＩｐマネジメント株式会社 撮像装置
US10356334B2 (en) 2015-11-13 2019-07-16 Novadaq Technologies ULC Systems and methods for illumination and imaging of a target
EP4155716A1 (de) 2016-01-26 2023-03-29 Stryker European Operations Limited Bildsensoranordnung
WO2017163923A1 (ja) 2016-03-24 2017-09-28 ソニー株式会社 光電変換素子およびその測定方法、固体撮像素子、電子機器、並びに太陽電池
US10869645B2 (en) 2016-06-14 2020-12-22 Stryker European Operations Limited Methods and systems for adaptive imaging for low light signal enhancement in medical visualization
US10090466B2 (en) 2016-07-21 2018-10-02 Massachusetts Institute Of Technology Far-infrared detection using Weyl semimetals
CN110582854B (zh) 2016-12-02 2023-03-14 纽约州州立大学研究基金会 用于熔融的多层非晶硒传感器的制造方法
FR3059829B1 (fr) * 2016-12-05 2019-05-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodetecteur infrarouge
KR101930879B1 (ko) * 2016-12-14 2018-12-19 실리콘 디스플레이 (주) 적외선 이미지 센서
TWI615611B (zh) * 2016-12-20 2018-02-21 氣體偵測器
CN109713008A (zh) * 2017-10-26 2019-05-03 苏州大学 一种近红外-可见光上转换器件及其制备方法
CN108831905B (zh) * 2018-05-28 2021-07-09 东南大学 一种基于半导体量子点的红外探测-可见光显示集成系统、制备方法及成像方法
CN109037372B (zh) * 2018-07-20 2019-12-24 大连民族大学 一种基于氧化钼微米带/p型Si的多波段光响应器件及其制备方法
CN109728122B (zh) * 2019-01-03 2020-11-20 吉林大学 一种基于FTO/TiO2/MoO3异质结的紫外探测器及其制备方法
CN110265561A (zh) * 2019-06-17 2019-09-20 深圳扑浪创新科技有限公司 一种纯量子点上转换发光器件及其制备方法
CN110400862B (zh) * 2019-07-29 2021-04-02 中国科学院长春光学精密机械与物理研究所 一种红外热辐射光源及红外传感器
TW202135334A (zh) * 2020-02-13 2021-09-16 日商富士軟片股份有限公司 光檢測元件及影像感測器
CN111628093B (zh) * 2020-05-13 2021-06-29 电子科技大学 一种高效率有机上转换器件

Family Cites Families (213)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139976A (en) 1981-02-23 1982-08-30 Omron Tateisi Electronics Co Light emitting/receiving device
JPS58215081A (ja) 1982-06-08 1983-12-14 Mitsui Toatsu Chem Inc アモルフアスシリコン太陽電池
EP0106514B1 (de) 1982-09-23 1989-03-15 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Infrarotdetektor
JPS6030163A (ja) 1983-07-28 1985-02-15 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池モジユ−ル
JPS61149831A (ja) 1984-12-24 1986-07-08 Matsushita Electric Works Ltd 赤外線検知装置
US4778692A (en) 1985-02-20 1988-10-18 Canon Kabushiki Kaisha Process for forming deposited film
EP0219711A1 (de) 1985-10-08 1987-04-29 Heimann GmbH Infrarotdetektor
JPH0797657B2 (ja) 1986-10-01 1995-10-18 株式会社小松製作所 光メモリ
US4885211A (en) 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
JPS6412583A (en) 1987-07-07 1989-01-17 Toshiba Corp Photodetector
JPH0216421A (ja) 1988-07-04 1990-01-19 Matsushita Electric Ind Co Ltd 光検出器
JP2717583B2 (ja) 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
JPH0379693A (ja) 1989-04-28 1991-04-04 Quantex Corp 光学的アップコンバーションのための高性能光ルミネセント材料及びそれを作る方法
US5122905A (en) 1989-06-20 1992-06-16 The Dow Chemical Company Relective polymeric body
US5121398A (en) 1989-09-26 1992-06-09 Excel Technology, Inc. Broadly tunable, high repetition rate solid state lasers and uses thereof
US5315129A (en) 1990-08-20 1994-05-24 University Of Southern California Organic optoelectronic devices and methods
ES2158847T3 (es) 1991-01-16 2001-09-16 Univ Johns Hopkins Mutaciones heredadas y somaticas del gen apc en el cancer colorectal del hombre.
SE468188B (sv) 1991-04-08 1992-11-16 Stiftelsen Inst Foer Mikroelek Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning
US5270092A (en) 1991-08-08 1993-12-14 The Regents, University Of California Gas filled panel insulation
JPH05186702A (ja) 1992-01-13 1993-07-27 Fuji Xerox Co Ltd ジハロゲン化スズフタロシアニンとハロゲン化ガリウムフタロシアニンとの混合結晶およびそれを用いた電子写真感光体
JPH06326350A (ja) 1993-05-12 1994-11-25 Nichia Chem Ind Ltd 赤外可視変換素子
JP3405608B2 (ja) 1993-09-17 2003-05-12 株式会社東芝 有機ｅｌ素子
JPH07122762A (ja) 1993-10-22 1995-05-12 Asahi Chem Ind Co Ltd 薄膜光起電力装置
US5389788A (en) 1993-12-13 1995-02-14 Hughes Aircraft Company Infrared transducer and goggles incorporating the same
JPH07271067A (ja) * 1994-03-30 1995-10-20 Mita Ind Co Ltd 積層型電子写真感光体
JPH087096A (ja) 1994-06-20 1996-01-12 Fujitsu General Ltd 動画認識システム
FR2729757A1 (fr) 1995-01-20 1996-07-26 Sofradir Dispositif de detection d'ondes electromagnetiques, et notamment de rayonnements infra-rouges
US5710428A (en) 1995-08-10 1998-01-20 Samsung Electronics Co., Ltd. Infrared focal plane array detecting apparatus having light emitting devices and infrared camera adopting the same
US5811834A (en) 1996-01-29 1998-09-22 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organo-electroluminescence device and organo-electroluminescence device for which the light-emitting material is adapted
JPH1065200A (ja) 1996-08-15 1998-03-06 Yokogawa Electric Corp 赤外受光素子
US6211529B1 (en) 1996-08-27 2001-04-03 California Institute Of Technology Infrared radiation-detecting device
US5853497A (en) 1996-12-12 1998-12-29 Hughes Electronics Corporation High efficiency multi-junction solar cells
JPH10242493A (ja) 1997-02-28 1998-09-11 Mitsubishi Heavy Ind Ltd 太陽電池
US6337492B1 (en) 1997-07-11 2002-01-08 Emagin Corporation Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer
EP1051762A1 (de) 1998-02-02 2000-11-15 Uniax Corporation X-y adressierbare elektrische mikroschalteranordnung und seine verwendung in sensormatrizen
US5965875A (en) 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
JPH11329736A (ja) 1998-05-20 1999-11-30 Futaba Corp 光変調鏡
EP1048084A4 (de) 1998-08-19 2001-05-09 Univ Princeton Organische optoelektronische lichtempfindliche verrichtung
US6140646A (en) 1998-12-17 2000-10-31 Sarnoff Corporation Direct view infrared MEMS structure
JP2000277265A (ja) 1999-03-25 2000-10-06 Agency Of Ind Science & Technol 有機空間光変調素子
JP2000349365A (ja) 1999-06-07 2000-12-15 Futaba Corp 光電流増倍素子
JP2001006876A (ja) 1999-06-25 2001-01-12 Futaba Corp 光−光変換素子
JP4107354B2 (ja) 1999-07-15 2008-06-25 独立行政法人科学技術振興機構 ミリ波・遠赤外光検出器
US6512385B1 (en) 1999-07-26 2003-01-28 Paul Pfaff Method for testing a device under test including the interference of two beams
JP3950594B2 (ja) 1999-09-03 2007-08-01 ローム株式会社 表示装置
US6509574B2 (en) 1999-12-02 2003-01-21 Texas Instruments Incorporated Optocouplers having integrated organic light-emitting diodes
US20020066904A1 (en) 1999-12-03 2002-06-06 Han-Tzong Yuan Solid-state relay having integrated organic light-emitting diodes
AUPQ897600A0 (en) 2000-07-25 2000-08-17 Liddiard, Kevin Active or self-biasing micro-bolometer infrared detector
US6579629B1 (en) 2000-08-11 2003-06-17 Eastman Kodak Company Cathode layer in organic light-emitting diode devices
GB0024804D0 (en) 2000-10-10 2000-11-22 Microemissive Displays Ltd An optoelectronic device
US6828045B1 (en) 2003-06-13 2004-12-07 Idemitsu Kosan Co., Ltd. Organic electroluminescence element and production method thereof
DE10101995A1 (de) 2001-01-18 2002-07-25 Philips Corp Intellectual Pty Schaltungsanordnung und Verfahren zum Schützen mindestens einer Chipanordnung vor Manipulation und/oder vor Mißbrauch
JP2002340668A (ja) 2001-05-18 2002-11-27 Denso Corp サーモパイル式赤外線センサおよびその検査方法
WO2002099896A1 (en) 2001-06-05 2002-12-12 State University Of New York Infrared radiation imager
JP2003083809A (ja) 2001-09-10 2003-03-19 Hamamatsu Photonics Kk 赤外可視変換部材及び赤外線検出装置。
US20030052365A1 (en) 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
US7348946B2 (en) 2001-12-31 2008-03-25 Intel Corporation Energy sensing light emitting diode display
US7436038B2 (en) 2002-02-05 2008-10-14 E-Phocus, Inc Visible/near infrared image sensor array
US7378124B2 (en) 2002-03-01 2008-05-27 John James Daniels Organic and inorganic light active devices and methods for making the same
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
CA2480518C (en) 2002-03-29 2016-07-19 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US6951694B2 (en) 2002-03-29 2005-10-04 The University Of Southern California Organic light emitting devices with electron blocking layers
EP1367659B1 (de) 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organischer Feldeffekt-Transistor
TWI272874B (en) 2002-08-09 2007-02-01 Semiconductor Energy Lab Organic electroluminescent device
US20040031965A1 (en) * 2002-08-16 2004-02-19 Forrest Stephen R. Organic photonic integrated circuit using an organic photodetector and a transparent organic light emitting device
US20050126628A1 (en) 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7119359B2 (en) 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US7052351B2 (en) 2002-12-31 2006-05-30 Eastman Kodak Company Using hole- or electron-blocking layers in color OLEDS
JP2003178887A (ja) 2003-01-06 2003-06-27 Canon Inc 電界発光素子用電極材料の選択方法
EP1447860A1 (de) 2003-02-17 2004-08-18 Rijksuniversiteit Groningen Photodiode aus organischem Material
US6869699B2 (en) 2003-03-18 2005-03-22 Eastman Kodak Company P-type materials and mixtures for electronic devices
US7727693B2 (en) 2003-04-24 2010-06-01 Sharp Kabushiki Kaisha Electrophotographic photoreceptor, electrophotographic image forming method, and electrophotographic apparatus
US20040222306A1 (en) 2003-05-08 2004-11-11 Anthony Fajarillo Methods, systems and apparatus for displaying bonsai trees
US6914315B2 (en) 2003-05-28 2005-07-05 Vtera Technology Inc. GaN-based heterostructure photodiode
KR101118810B1 (ko) 2003-06-12 2012-03-20 시리카 코포레이션 자유 캐리어의 정상 상태 비평형 분포 및 이를 이용한 광자에너지 상승 변환
US7053412B2 (en) 2003-06-27 2006-05-30 The Trustees Of Princeton University And Universal Display Corporation Grey scale bistable display
US7148463B2 (en) 2003-07-16 2006-12-12 Triquint Semiconductor, Inc. Increased responsivity photodetector
US7381953B1 (en) 2003-07-25 2008-06-03 Public Service Solutions, Inc. Infrared imaging device
US6906326B2 (en) 2003-07-25 2005-06-14 Bae Systems Information And Elecronic Systems Integration Inc. Quantum dot infrared photodetector focal plane array
US20050077539A1 (en) 2003-08-18 2005-04-14 Jan Lipson Semiconductor avalanche photodetector with vacuum or gaseous gap electron acceleration region
EP1513171A1 (de) 2003-09-05 2005-03-09 Sony International (Europe) GmbH Farbstoffsensibilisierte Solarzelle und Herstellungsverfahren
US6881502B2 (en) 2003-09-24 2005-04-19 Eastman Kodak Company Blue organic electroluminescent devices having a non-hole-blocking layer
US8884845B2 (en) 2003-10-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Display device and telecommunication system
WO2005050164A2 (en) 2003-11-13 2005-06-02 Georgia Tech Research Corporation Detection systems and methods
US6972431B2 (en) 2003-11-26 2005-12-06 Trustees Of Princeton University Multilayer organic photodetectors with improved performance
US7125635B2 (en) 2003-12-23 2006-10-24 Xerox Corporation Imaging members
CN100477289C (zh) 2004-01-20 2009-04-08 瑟雷姆技术公司 具有外延生长量子点材料的太阳能电池
US6943425B2 (en) 2004-01-23 2005-09-13 Intevac, Inc. Wavelength extension for backthinned silicon image arrays
GB0401578D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
US7151339B2 (en) 2004-01-30 2006-12-19 Universal Display Corporation OLED efficiency by utilization of different doping concentrations within the device emissive layer
JP2005266537A (ja) 2004-03-19 2005-09-29 Stanley Electric Co Ltd 赤外線透過フィルタ及び該赤外線透過フィルタを具備する赤外線投光器
JP2005277113A (ja) 2004-03-25 2005-10-06 Sanyo Electric Co Ltd 積層型太陽電池モジュール
US20050228277A1 (en) 2004-04-05 2005-10-13 Siemens Medical Solutions Usa, Inc. System and method for 2D partial beamforming arrays with configurable sub-array elements
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
WO2005101530A1 (en) 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
JP2006013103A (ja) 2004-06-25 2006-01-12 Sony Corp 有機電界発光素子
US20060014044A1 (en) 2004-07-14 2006-01-19 Au Optronics Corporation Organic light-emitting display with multiple light-emitting modules
US7300731B2 (en) 2004-08-10 2007-11-27 E.I. Du Pont De Nemours And Company Spatially-doped charge transport layers
KR20060018583A (ko) 2004-08-25 2006-03-02 삼성전자주식회사 반도체 나노결정을 함유하는 백색 발광 유·무기하이브리드 전기 발광 소자
US8026510B2 (en) 2004-10-20 2011-09-27 Dai Nippon Printing Co., Ltd. Organic electronic device and method for producing the same
JP2006128437A (ja) 2004-10-29 2006-05-18 Sony Corp 有機電界発光素子および表示装置
KR100678291B1 (ko) 2004-11-11 2007-02-02 삼성전자주식회사 나노입자를 이용한 수광소자
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
TWI278252B (en) 2005-04-04 2007-04-01 Au Optronics Corp Organic light-emitting display device
US7279705B2 (en) 2005-01-14 2007-10-09 Au Optronics Corp. Organic light-emitting device
US20060157806A1 (en) 2005-01-18 2006-07-20 Omnivision Technologies, Inc. Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response
US7811479B2 (en) 2005-02-07 2010-10-12 The Trustees Of The University Of Pennsylvania Polymer-nanocrystal quantum dot composites and optoelectronic devices
US8115093B2 (en) 2005-02-15 2012-02-14 General Electric Company Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
KR100624307B1 (ko) 2005-02-23 2006-09-19 제일모직주식회사 표시장치용 저반사율의 휘도 향상 다층 광학필름 및 이를이용한 유기발광다이오드 표시장치
JP4839632B2 (ja) 2005-02-25 2011-12-21 ソニー株式会社 撮像装置
US7208738B2 (en) 2005-02-28 2007-04-24 Sundar Natarajan Yoganandan Light source utilizing an infrared sensor to maintain brightness and color of an LED device
CN101133499B (zh) 2005-03-04 2010-06-16 松下电工株式会社 多层有机太阳能电池
JP4567495B2 (ja) 2005-03-11 2010-10-20 株式会社リコー 光波長変換素子
TWI305431B (en) 2005-04-06 2009-01-11 Au Optronics Corp Organic light emitting diode display
ES2297972A1 (es) 2005-05-30 2008-05-01 Universidad Politecnica De Madrid Fotodetector de infrarrojos de banda intermedia y puntos cuanticos.
US20090084436A1 (en) 2005-06-02 2009-04-02 The Regents Of The University Of California Effective organic solar cells based on triplet materials
US20090115310A1 (en) 2005-06-06 2009-05-07 Sharp Kabushiki Kaisha Coating liquid for hole injection and transport layer, production method of hole injection and transport layer, organic electroluminescent element, and production method thereof
US7696682B2 (en) 2005-06-27 2010-04-13 Samsung Electronics Co., Ltd. Organic light emitting device using Mg—Ag thin film and manufacturing method thereof
US7247850B2 (en) 2005-08-05 2007-07-24 Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of National Defence Of Her Majesty's Canadian Government Infrared imager
WO2007017475A1 (de) 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Organischer photodetektor mit erhöhter empfindlichkeit, sowie verwendung eines triarylmin-fluoren-polymers als zwischenschicht in einem photodetektor
DE102005037290A1 (de) 2005-08-08 2007-02-22 Siemens Ag Flachbilddetektor
KR100720100B1 (ko) 2005-08-23 2007-05-18 한양대학교 산학협력단 다중 이종 헤테로 구조의 정공속박층을 가지는유기발광소자 및 그 제조방법
ATE551723T1 (de) 2005-08-25 2012-04-15 Edward Sargent Optische quantum-dot-vorrichtungen mit erhöhter verstärkung und empfindlichkeit
CN100424897C (zh) 2005-09-28 2008-10-08 中国科学院上海技术物理研究所 氮化镓基红外-可见波长转换探测器
KR100691567B1 (ko) 2005-10-18 2007-03-09 신코엠 주식회사 유기 전계 발광다이오드 디스플레이 패널의 구동회로 및이를 이용한 디스차아지 방법
US8013240B2 (en) * 2005-11-02 2011-09-06 The Trustees Of Princeton University Organic photovoltaic cells utilizing ultrathin sensitizing layer
US7947897B2 (en) 2005-11-02 2011-05-24 The Trustees Of Princeton University Organic photovoltaic cells utilizing ultrathin sensitizing layer
US8021763B2 (en) 2005-11-23 2011-09-20 The Trustees Of Princeton University Phosphorescent OLED with interlayer
WO2007066556A1 (en) 2005-12-05 2007-06-14 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex and light-emitting element, light-emitting device and electronic device using the same
US7414294B2 (en) 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
EP1804309B1 (de) 2005-12-23 2008-07-23 Novaled AG Elektronische Vorrichtung mit einer Schichtenstruktur von organischen Schichten
KR101288304B1 (ko) 2006-01-27 2013-07-18 삼성디스플레이 주식회사 유기 발광 화합물 및 이를 구비한 유기 발광 소자
WO2008060642A2 (en) 2006-02-10 2008-05-22 The Research Foundation Of State University Of New York High density coupling of quantum dots to carbon nanotube surface for efficient photodetection
JP2009527108A (ja) 2006-02-13 2009-07-23 ソレクサント・コーポレイション ナノ構造層を備える光起電装置
KR20080103568A (ko) 2006-02-17 2008-11-27 솔렉슨트 코포레이션 나노구조의 전계발광 장치 및 디스플레이
AU2007224108B2 (en) 2006-03-02 2011-04-07 Compound Photonics Limited Optically addressed spatial light modulator and method
WO2007099880A1 (en) 2006-03-03 2007-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting material, light emitting element, light emitting device and electronic device
WO2008054845A2 (en) 2006-03-23 2008-05-08 Solexant Corporation Photovoltaic device containing nanoparticle sensitized carbon nanotubes
US8247801B2 (en) 2006-03-31 2012-08-21 Imec Organic semi-conductor photo-detecting device
US20080121271A1 (en) 2006-05-03 2008-05-29 Rochester Institute Of Technology Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof
JP2008016831A (ja) 2006-06-09 2008-01-24 Sumitomo Chemical Co Ltd 光−光変換デバイス
WO2008105792A2 (en) 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
TWI312531B (en) 2006-06-30 2009-07-21 Nat Taiwan Universit Photoelectric device and fabrication method thereof
US7955889B1 (en) 2006-07-11 2011-06-07 The Trustees Of Princeton University Organic photosensitive cells grown on rough electrode with nano-scale morphology control
SG175565A1 (en) 2006-09-29 2011-11-28 Univ Florida Method and apparatus for infrared detection and display
US8080824B2 (en) 2006-11-15 2011-12-20 Academia Sinica Suppressing recombination in an electronic device
US20080142075A1 (en) 2006-12-06 2008-06-19 Solexant Corporation Nanophotovoltaic Device with Improved Quantum Efficiency
US7799990B2 (en) 2007-03-12 2010-09-21 Northwestern University Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same
CN102017147B (zh) 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、系统和方法
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
WO2009002551A1 (en) 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
KR100838088B1 (ko) 2007-07-03 2008-06-16 삼성에스디아이 주식회사 유기 발광 소자
ATE498203T1 (de) 2007-07-23 2011-02-15 Basf Se Photovoltaische tandem-zelle
DE102007043648A1 (de) 2007-09-13 2009-03-19 Siemens Ag Organischer Photodetektor zur Detektion infraroter Strahlung, Verfahren zur Herstellung dazu und Verwendung
SG186643A1 (en) 2007-12-13 2013-01-30 Technion Res & Dev Foundation Photovoltaic cells comprising group iv-vi semiconductor core-shell nanocrystals
JP5524859B2 (ja) 2007-12-18 2014-06-18 ティ． ミハレヴィチュ，マレク 量子トンネル効果光検出器アレイ
JP5162271B2 (ja) 2008-02-15 2013-03-13 Ａｇｃテクノグラス株式会社 光学多層膜付きガラス部材とその製造方法
KR20090089073A (ko) 2008-02-18 2009-08-21 삼성모바일디스플레이주식회사 실란일아민계 화합물 및 이를 포함한 유기막을 구비한 유기발광 소자
US20090208776A1 (en) 2008-02-19 2009-08-20 General Electric Company Organic optoelectronic device and method for manufacturing the same
US20090214967A1 (en) 2008-02-26 2009-08-27 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor, and image forming apparatus and process cartridge using the same
US20090217967A1 (en) 2008-02-29 2009-09-03 International Business Machines Corporation Porous silicon quantum dot photodetector
JP5108806B2 (ja) 2008-03-07 2012-12-26 富士フイルム株式会社 光電変換素子及び撮像素子
WO2009116511A1 (ja) 2008-03-19 2009-09-24 シャープ株式会社 光増感素子及びそれを用いた太陽電池
KR101995371B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
JP4533939B2 (ja) 2008-04-10 2010-09-01 三菱重工業株式会社 赤外線検出素子、赤外線検出装置及び赤外線検出素子の製造方法
US7821807B2 (en) 2008-04-17 2010-10-26 Epir Technologies, Inc. Nonequilibrium photodetectors with single carrier species barriers
JP2009272528A (ja) 2008-05-09 2009-11-19 Fujifilm Corp 光電変換素子，光電変換素子の製造方法及び固体撮像素子
WO2009152275A1 (en) 2008-06-11 2009-12-17 Plextronics, Inc. Encapsulation for organic optoelectronic devices
US20100059097A1 (en) 2008-09-08 2010-03-11 Mcdonald Mark Bifacial multijunction solar cell
JP5258037B2 (ja) 2008-09-08 2013-08-07 国立大学法人京都大学 光電変換素子、その製造方法、及び太陽電池
JP2010067802A (ja) 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2010087205A (ja) 2008-09-30 2010-04-15 Kaneka Corp 多接合型薄膜光電変換装置
CN102197507A (zh) 2008-10-28 2011-09-21 密执安州立大学董事会 具有单独的红色、绿色和蓝色子元件的堆叠式白色oled
TWI407610B (zh) 2008-11-28 2013-09-01 Univ Nat Chiao Tung Infrared light distance sensing device for organic semiconductors
KR101584990B1 (ko) 2008-12-01 2016-01-13 엘지디스플레이 주식회사 백색 유기 발광 소자 및 이의 제조 방법
US7968215B2 (en) 2008-12-09 2011-06-28 Global Oled Technology Llc OLED device with cyclobutene electron injection materials
EP2380221A2 (de) 2008-12-19 2011-10-26 Philips Intellectual Property & Standards GmbH Transparente organische leuchtdiode
US20110012091A1 (en) 2009-01-12 2011-01-20 The Regents Of The University Of Michigan Enhancement of organic photovoltaic cell open circuit voltage using electron/hole blocking exciton blocking layers
US8563850B2 (en) 2009-03-16 2013-10-22 Stion Corporation Tandem photovoltaic cell and method using three glass substrate configuration
DE102009018647A1 (de) 2009-04-23 2010-10-28 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
JP2010263030A (ja) 2009-05-01 2010-11-18 Japan Advanced Institute Of Science & Technology Hokuriku 有機ｅｌ素子
TWI380490B (en) 2009-05-05 2012-12-21 Univ Nat Chiao Tung Organic photosensitive photoelectric device
GB2470006B (en) 2009-05-05 2012-05-23 Cambridge Display Tech Ltd Device and method of forming a device
GB0909818D0 (en) 2009-06-08 2009-07-22 Isis Innovation Device
WO2010142575A2 (en) 2009-06-11 2010-12-16 Oerlikon Solar Ag, Trübbach Tandem solar cell integrated in a double insulating glass window for building integrated photovoltaic applications
JP2011098948A (ja) 2009-06-25 2011-05-19 Yamagata Promotional Organization For Industrial Technology ビピリジン誘導体及びそれを含む有機エレクトロルミネッセンス素子
US9496315B2 (en) 2009-08-26 2016-11-15 Universal Display Corporation Top-gate bottom-contact organic transistor
US9666818B2 (en) 2009-09-18 2017-05-30 Konica Minolta Holdings, Inc. Tandem-type organic photoelectric conversion element and solar battery
JP2011065927A (ja) 2009-09-18 2011-03-31 Toshiba Corp 発光装置
WO2011041421A1 (en) 2009-09-29 2011-04-07 Research Triangle Institute, International Quantum dot-fullerene junction based photodetectors
US20110073835A1 (en) 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
US9054262B2 (en) 2009-09-29 2015-06-09 Research Triangle Institute Integrated optical upconversion devices and related methods
KR101608903B1 (ko) 2009-11-16 2016-04-20 삼성전자주식회사 적외선 이미지 센서
WO2011066396A2 (en) * 2009-11-24 2011-06-03 University Of Florida Research Foundation, Inc. Method and apparatus for sensing infrared radiation
CN101794834B (zh) 2009-12-14 2013-06-12 湖南共创光伏科技有限公司 设有上转换荧光材料膜层的高效太阳能薄膜电池及其膜层制备方法
JP5778261B2 (ja) 2010-05-24 2015-09-16 ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク．Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｔｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． 赤外光アップコンバージョンデバイス上に電荷遮断層を設けるための方法および装置
CN101872793B (zh) 2010-07-02 2013-06-05 福建钧石能源有限公司 叠层太阳能电池及其制造方法
US9082922B2 (en) 2010-08-18 2015-07-14 Dayan Ban Organic/inorganic hybrid optical amplifier with wavelength conversion
AU2011332300A1 (en) 2010-11-23 2013-06-06 Nanoholdings, Llc IR photodetectors with high detectivity at low drive voltage
WO2012071107A1 (en) 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
KR101890748B1 (ko) 2011-02-01 2018-08-23 삼성전자주식회사 멀티 스택 씨모스(ｃｍｏｓ) 이미지 센서의 화소 및 그 제조방법
EP2666191A4 (de) 2011-02-28 2018-01-03 University of Florida Research Foundation, Inc. Photodetektor und aufwärtsumsetzungsvorrichtung mit verstärkung (ec)
WO2012118529A1 (en) 2011-02-28 2012-09-07 University Of Florida Research Foundation, Inc. Up-conversion devices with a broad band absorber
EP2695205A4 (de) 2011-04-05 2014-10-08 Univ Florida Verfahren und vorrichtung zur integration einer infrarot (ir)-photovoltaikzelle auf einer dünnfilm-photovoltaikzelle
RU2013158845A (ru) 2011-06-06 2015-07-20 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Прозрачное устройство преобразования инфракрасного излучения в видимое излучение с повышением частоты
WO2012170456A2 (en) 2011-06-06 2012-12-13 University Of Florida Research Foundation, Inc. Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
WO2012178071A2 (en) 2011-06-23 2012-12-27 Brown University Device and methods for temperature and humidity measurements using a nanocomposite film sensor
RU2014102650A (ru) 2011-06-30 2015-08-10 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Усиливающий инфракрасный фотодетектор и его применение для обнаружения ик-излучения
JP5853486B2 (ja) 2011-08-18 2016-02-09 ソニー株式会社 撮像装置および撮像表示システム
EP2599898A1 (de) 2011-12-01 2013-06-05 Bayer Intellectual Property GmbH Durchgehende Synthese von InP/ZnS-Nanokristallen mit hoher Quantenausbeute
KR20150109450A (ko) 2013-01-25 2015-10-01 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. 용액 처리된 pbs 광검출기를 이용한 신규 ir 이미지 센서

Also Published As

Publication number Publication date
JP2017175149A (ja) 2017-09-28
JP6513733B2 (ja) 2019-05-15
BR112013033122A2 (pt) 2017-01-24
RU2014102650A (ru) 2015-08-10
US20140217284A1 (en) 2014-08-07
CN103733355B (zh) 2017-02-08
KR102059208B1 (ko) 2020-02-07
EP2727154B1 (de) 2019-09-18
WO2013003850A3 (en) 2013-04-11
JP2014521214A (ja) 2014-08-25
MX2013015214A (es) 2014-03-21
EP2727154A4 (de) 2015-03-04
KR20140064767A (ko) 2014-05-28
CA2840498A1 (en) 2013-01-03
WO2013003850A2 (en) 2013-01-03
JP6502093B2 (ja) 2019-04-17
US10134815B2 (en) 2018-11-20
CN103733355A (zh) 2014-04-16
WO2013003850A8 (en) 2013-05-16
US20170117335A1 (en) 2017-04-27
AU2012275060A1 (en) 2014-01-30

Similar Documents

Publication Publication Date Title
US10134815B2 (en) Method and apparatus for detecting infrared radiation with gain
US9997571B2 (en) Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
KR102031996B1 (ko) Cmos 이미지 센서를 갖는 ir 업 컨버전 디바이스를 집적한 적외선 이미징 디바이스
US9437835B2 (en) Transparent infrared-to-visible up-conversion device
US20150372046A1 (en) A NOVEL IR IMAGE SENSOR USING A SOLUTION-PROCESSED PbS PHOTODETECTOR
US9190458B2 (en) Method and apparatus for providing a window with an at least partially transparent one side emitting OLED lighting and an IR sensitive photovoltaic panel
WO2013028232A1 (en) Photodetector and upconversion device with gain (ec)

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20140127

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20150204

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 51/52 20060101ALI20150129BHEP

Ipc: H01L 51/44 20060101ALI20150129BHEP

Ipc: H01L 31/10 20060101AFI20150129BHEP

17Q First examination report despatched

Effective date: 20160729

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20190410

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602012064151

Country of ref document: DE

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1182340

Country of ref document: AT

Kind code of ref document: T

Effective date: 20191015

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20190918

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191218

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191218

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191219

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1182340

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190918

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200120

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200224

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602012064151

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG2D Information on lapse in contracting state deleted

Ref country code: IS

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200119

26N No opposition filed

Effective date: 20200619

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602012064151

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20200702

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20200731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200702

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200702

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200731

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200702

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200731

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200731

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210202

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190918