EP2036966B1 - Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür - Google Patents

Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür Download PDF

Info

Publication number
EP2036966B1
EP2036966B1 EP07790452.2A EP07790452A EP2036966B1 EP 2036966 B1 EP2036966 B1 EP 2036966B1 EP 07790452 A EP07790452 A EP 07790452A EP 2036966 B1 EP2036966 B1 EP 2036966B1
Authority
EP
European Patent Office
Prior art keywords
powder
sialon
phosphor
main component
oxynitride phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP07790452.2A
Other languages
English (en)
French (fr)
Other versions
EP2036966A1 (de
EP2036966A4 (de
Inventor
Takeshi Yamao
Tetsuo Yamada
Shin-Ichi Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to EP14153927.0A priority Critical patent/EP2730635B1/de
Publication of EP2036966A1 publication Critical patent/EP2036966A1/de
Publication of EP2036966A4 publication Critical patent/EP2036966A4/de
Application granted granted Critical
Publication of EP2036966B1 publication Critical patent/EP2036966B1/de
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/6261—Milling
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/62675—Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62685—Treating the starting powders individually or as mixtures characterised by the order of addition of constituents or additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
    • C04B2235/3203—Lithium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3865—Aluminium nitrides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3895—Non-oxides with a defined oxygen content, e.g. SiOC, TiON
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/442—Carbonates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/52—Constituents or additives characterised by their shapes
    • C04B2235/5296—Constituents or additives characterised by their shapes with a defined aspect ratio, e.g. indicating sphericity
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5409—Particle size related information expressed by specific surface values
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5463—Particle size distributions
    • C04B2235/5481—Monomodal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
    • H01J2211/20—Constructional details
    • H01J2211/34—Vessels, containers or parts thereof, e.g. substrates
    • H01J2211/42—Fluorescent layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Definitions

  • the present invention relates to an optical functional material having a function of converting a part of irradiation light into light at a wavelength different from that of the irradiation light and at the same time, mixing the converted light with the unconverted irradiation light to cause conversion into light differing in the color, and a production method thereof. More specifically, the present invention relates to a rare earth metal element-activated sialon-based oxynitride phosphor used for a white light-emitting diode (white LED) using a blue light-emitting diode (blue LED) as a light source. The present invention also relates to a production method of a sialon-based oxynitride phosphor for the above-described white light-emitting diode (white LED).
  • the white LED requires low power consumption compared with existing white light sources and has a long life, and therefore expansion of its application to backlights for liquid crystal panels, indoor or outdoor lighting devices, and the like is proceeding.
  • the present white LED is obtained by coating a Ce-doped YAG (yttrium ⁇ aluminum ⁇ garnet) on the surface of blue LED.
  • Ce-doped YAG yttrium ⁇ aluminum ⁇ garnet
  • the fluorescence wavelength of Ce-doped YAG is in the vicinity of 530 nm and when this fluorescence color and light of blue LED are mixed to produce white light, the light is slightly blue-tinged and good white color cannot be obtained.
  • an ⁇ -sialon-based phosphor activated by a rare earth element is known to emit fluorescence of which the wavelength is longer than the fluorescence wavelength of Ce-doped YAG (is shifted to red side) (see, Kokai (Japanese Unexamined Patent Publication) No. 2002-363554 ).
  • silicon nitride is used as a raw material and after mixing a calcium source, a rare earth metal source and an aluminum source all at once, the reaction to sialon is allowed to proceed while compressing the powder by using a hot-press method.
  • Kokai No. 2005-162808 discloses a production method of a sialon-based phosphor, comprising using, as the raw material, a silicon nitride powder containing from 5 to 95 wt% of crystalline silicon nitride, mixing a calcium source, a rare earth metal source and an aluminum source all at once with the powder, and allowing the reaction to sialon to proceed by using a normal-pressure firing method.
  • the phosphor having a composition disclosed in Patent Document 1 is obtained as a firm sintered body because the reaction to sialon is allowed to proceed while compressing the powder by using a hot-press method, and for forming the sintered body into powder particles, a strong grinding treatment is necessary. Even when a grinding treatment is applied, only an aggregate of massive particles each resulting from firm fusion bonding of primary particles is obtained and this is not suited for use as a phosphor powder.
  • the sialon-based phosphor produced by the method disclosed in Patent Document 2 can be obtained as a phosphor powder that is not largely aggregated.
  • the yield of the sialon powder having a particle diameter of 2 to 20 ⁇ m is less than 55 wt%.
  • the amount of Eu remaining in the particle after acid treatment is small, and excessive Eu needs to be added for obtaining a high-brightness phosphor powder.
  • the obtained sialon-based phosphor is an aggregate of massive particles each resulting from fusion bonding of primary particles, and the incident light is scattered on the aggregate surface in a large ratio due to the effect of irregularities on the outer periphery of the aggregate particle.
  • the brightness of the phosphor decreases.
  • a phosphor powder having a particle diameter of 2 to 20 ⁇ m, being less aggregated and causing no reduction in the emission intensity even when the powder becomes a fine particle is preferred.
  • WO 2005/123876 A1 disclosed an ⁇ -sialon represented by the general formula (M1) X (M2) Y (Si,Al) 12 (O,N) 16 , wherein M1 represents one or more elements selected from the group consisting of Li, Mg, Ca, Y and lanthanide metals (except La and Ce), wherein M2 represents one or more elements selected from Ce, Pr, Eu, Tb, Yb and Er, wherein 0.3 ⁇ X+Y ⁇ 1.5, and wherein 0 ⁇ Y ⁇ 0.7.
  • the ⁇ -sialon contains not less than 30 ppm and not more than 1% of fluorine as an impurity.
  • the average primary particle diameter of such an ⁇ -sialon By setting the average primary particle diameter of such an ⁇ -sialon to 1-10 ⁇ m, a large amount of an ⁇ -sialon phosphor can be stably obtained with good reproducibility.
  • the ⁇ -sialon exhibits excellent emission characteristics as a white phosphor.
  • the present invention has been made to solve the above-described problems and an object of the present invention is to provide a sialon-based oxynitride phosphor having high brightness at an emission wavelength of 560 to 620 nm. Another object of the present invention is to provide a sialon-based oxynitride phosphor having high brightness, a desired particle size distribution and excellent miscibility with a resin and thereby achieve high brightness and stabilized color tone of an illuminating device such as white LED using blue LED as the light source or of an image display device having an excitation source such as electron beam.
  • Such a phosphor powder is suitable for forming a thin coated film and has a property that the fluorescence is uniform and the emission intensity is high.
  • Still another object of the present invention is to provide a novel production method of a sialon-based oxynitride phosphor, where a sialon-based oxynitride phosphor having high brightness and excellent miscibility with a resin as described above can be obtained in a high yield.
  • the dispersibility of a powder is determined by the ratio between the secondary particle size and the primary particle size.
  • the present inventors have studied the correlation between the mixing and firing method for a raw material powder containing silicon nitride and various substances as a lithium source, a calcium source, a rare earth metal source and an aluminum source, which are used for the production of a sialon-based oxynitride phosphor, and the dispersibility and fluorescent property of the produced powder.
  • the present invention provides, as means to attain the above-described objects, an oxynitride phosphor in accordance with present claim 1.
  • the above-described oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the median diameter D 50 in the particle size distribution curve is 8.0 ⁇ m or less.
  • the above-described oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the equivalent-sphere diameter D BET calculated on the basis of the BET specific surface area is 8.0 ⁇ m or less.
  • the oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the primary particle diameter D particle measured by the image analysis of a scanning electron micrograph is 8.0 ⁇ m or less.
  • the above-described oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the ratio D 90 /D 10 between the 90% diameter D 90 in the particle size distribution curve and the 10% diameter D 10 is 4.0 or less.
  • the oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein in the general formula: M x Si 12-(m+n) Al (m+n) O n N 16-n :Ln y , 1.0 ⁇ n ⁇ 1.25.
  • an oxynitride phosphor comprising an ⁇ -sialon as the main component, comprising:
  • the above-described production method of an oxynitride phosphor is provided, wherein the second step is a step of mixing at least one kind of a metal compound selected from the group consisting of:
  • the above-described production method of an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the first step is a step of firing a mixed powder obtained by adding:
  • the above-described production method of an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein:
  • the above-described production method of an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein:
  • the above-described production method of an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein:
  • the above-described production method of an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the silicon nitride powder is at least one kind of a silicon nitride powder selected from a nitrogen-containing silane compound, an amorphous silicon nitride and a crystalline silicon nitride.
  • the above-described production method of an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the silicon nitride powder is a mixture of two or more kinds of silicon nitride powders selected from a nitrogen-containing silane compound, an amorphous silicon nitride and a crystalline silicon nitride.
  • the above-described production method of an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the oxynitride phosphor comprising an ⁇ -sialon as the main component obtained by firing is acid-washed to remove the excessive glass phase.
  • the present invention also provides, as means to attain the above-described objects, a lighting device comprising an emission light source and the oxynitride phosphor above comprising an ⁇ -sialon as the main component, the phosphor being represented by the general formula: M x Si 12-(m+n) Al (m+n) O n N 16-n :Ln y .
  • the above-described lighting device comprising an emission above-described lighting device comprising an emission light source and an oxynitride phosphor comprising an ⁇ -sialon as the main component is provided, wherein the emission light source is LED of emitting light at a wavelength of 330 to 500 nm.
  • the present invention provides, as means to attain the above-described objects, an image display device comprising an excitation source and the oxynitride phosphor above comprising an ⁇ -sialon as the main component, the phosphor being represented by the general formula: M x Si 12-(m+n) Al (m+n) O n N 16-n :Ln y .
  • the above-described image display device comprising an excitation source and an oxynitride phosphor comprising an ⁇ -sialon as the main component
  • the excitation source is an electron beam, an electric field, a vacuum ultraviolet ray or an ultraviolet ray.
  • the above-described image display device comprising an excitation source and an oxynitride phosphor comprising an ⁇ -sialon as the main component
  • the image display device is any one of a fluorescent display tube (VFD), a field emission display (FED), a plasma display panel (PDP) and a cathode ray tube (CRT).
  • a sialon-based oxynitride phosphor extremely reduced in the aggregation of primary particles and excellent in miscibility with a resin and dispersibility in a resin is obtained.
  • This phosphor excellent in miscibility with a resin and dispersibility in a resin has characteristic features such as little scattering of incident light, uniform fluorescent property, no color unevenness, stable color tone and high emission intensity.
  • the method has a first step where a mixed powder obtained by previously adding at least one kind of a metal compound selected from a nitride, an oxynitride, an oxide or a precursor substance becoming an oxide upon thermal decomposition, of a metal M (M is at least one metal selected from the group consisting of Li, Ca, Mg, Ba, Sr, Y and a lanthanide metal excluding La, Ce, Pr, Eu, Dy, Er, Tb and Yb) solid-dissolved in an ⁇ -sialon, and a nitride, an oxynitride, an oxide or a precursor substance becoming an oxide upon thermal decomposition, of a lanthanide metal Ln (Ln is at least one lanthanide metal selected from the group consisting of Ce, Pr, Eu, Dy, Er, Tb and Yb) substituting a part or all of the metal element M to work as
  • a lighting device such as a white LED fabricated by combining the sialon-based oxynitride phosphor of the present invention with blue LED or violet LED is uniform and stable in the brightness and color tone and is excellent in view of performance, because high-quality light free of color unevenness is obtained.
  • the advantage in view of production by virtue of use of the sialon-based oxynitride phosphor of the present invention, the fluctuation of quality within and among the lots of the white LED product is small and the yield of the product is high.
  • the present invention is described in detail below.
  • the ⁇ -sialon of the present invention is a sialon where a predetermined amount of a metal M is solid-dissolved in a compound having a composition composed of Si, Al, O and N, represented by the following general formula (1): M x Si 12-(m+n) Al (m+n) O n N 16-n :Ln y (1) (wherein 0.3 ⁇ x+y ⁇ 1.5, 0 ⁇ y ⁇ 0.7, 0.3 ⁇ m ⁇ 4.5, and 0 ⁇ n ⁇ 2.25), and a part or all of the metal M solid-dissolved is substituted by a lanthanide metal Ln working as a luminescence center.
  • the oxynitride phosphor of the present invention is a phosphor comprising the ⁇ -sialon above as the main component.
  • the metal M solid-dissolved is at least one metal selected from the group consisting of Li, Ca, Mg, Ba, Sr, Y and a lanthanide metal excluding La, Ce, Pr, Eu, Dy, Er, Tb and Yb, and the lanthanide metal Ln working as a luminescence center is at least one lanthanide metal selected from Ce, Pr, Eu, Dy, Er, Tb and Yb.
  • factors m and n are 0.3 ⁇ m ⁇ 4.5 and 0 ⁇ n ⁇ 2.25. If m and n deviate from these ranges, an ⁇ -sialon becomes difficult to form and this is not preferred.
  • the value of m is preferably 0.5 ⁇ m ⁇ 2.5, and the value of n is preferably 0.5 ⁇ n ⁇ 1.25, more preferably 1.0 ⁇ n ⁇ 1.25. If n is less than 0.5, the emission intensity of the phosphor decreases, whereas if n exceeds 1.25, fusion bonding or aggregation of phosphor particles aggressively proceeds.
  • a phosphor using Ca as the metal M solid-dissolved in the ⁇ -sialon-based oxynitride phosphor of the present invention and Eu as the lanthanide metal Ln emits light of yellow color (wavelength: approximately from 560 to 590 nm) and has an optimal color tone for obtaining white LED. Furthermore, when the value of factor (m+n) in general formula (1) becomes large, the peak wavelength of the light emission spectrum of the obtained phosphor shifts to the short wavelength side (550 nm), whereas when the value of factor (m+n) becomes small, the peak wavelength of the light emission spectrum of the obtained phosphor shifts to the long wavelength side (600 nm).
  • the aggregation index, A 1 D 50 /D BET , defined as the ratio between the median diameter D 50 [ ⁇ m] in the particle size distribution curve of the ⁇ -sialon-based oxynitride phosphor of the present invention and the equivalent-sphere diameter D BET [ ⁇ m] calculated on the basis of the BET specific surface area is 3.0 or less. If A 1 exceeds 3.0, aggregation or fusion bonding of particles aggressively proceeds and when used as a phosphor for white LED or the like, a large quantity of incident light is scattered and this disadvantageously causes a problem such as reduction in the absorbance or production of color unevenness in the obtained light emission. As for the phosphor particle, a monodisperse equiaxial particle is preferred.
  • the "particle size distribution curve" is obtained by using a in-liquid dispersion sample prepared in accordance with JIS Z8820 and converting the distribution of weight-basis particle diameters measured by laser diffraction/scattering method into a sub-sieve integrated distribution curve, and the "median diameter D 50 " indicates a particle diameter corresponding to the cumulative percentage of 50% in the particle size distribution curve.
  • D BET 6 / ⁇ ⁇ S BET
  • a 2 D 50 /D particle , defined as the ratio between the median diameter D 50 [ ⁇ m] in the particle size distribution curve and the primary particle diameter D particle [ ⁇ m] measured by the image analysis of a scanning electron micrograph, similarly, if A 2 exceeds 3.0, aggregation or fusion bonding of particles aggressively proceeds and when used as a phosphor for white LED or the like, a large quantity of incident light is scattered and this disadvantageously causes a problem such as reduction in the absorbance or production of color unevenness in the obtained light emission.
  • the primary particle diameter D particle of the ⁇ -sialon-based oxynitride phosphor measured by the image analysis of a scanning electron micrograph is preferably 8 ⁇ m or less, more preferably from 1 to 6 ⁇ m.
  • the equivalent-sphere diameter D BET calculated on the basis of the BET specific surface area is also preferably 8 ⁇ m or less, more preferably from 1 to 6 ⁇ m.
  • the median diameter in the particle size distribution curve of the ⁇ -sialon-based oxynitride phosphor of the present invention is preferably 8 ⁇ m or less, more preferably from 1 to 6 ⁇ m. If the primary particle diameter or median diameter exceeds 8 ⁇ m, when a kneaded product with a light-transparent resin such as epoxy resin or acrylic resin is coated on a light-emitting diode (LED) to produce a lighting device such as white LED, fluctuation is produced in the emission intensity and color tone.
  • a light-transparent resin such as epoxy resin or acrylic resin
  • the dispersity d 90 /d 10 defined as the ratio between 10% diameter (d 10 ) and 90% diameter (d 90 ) in the particle size distribution is preferably 4.0 or less.
  • a first raw material powder is obtained in a first step of firing a mixed powder obtained by adding at least one kind of a metal compound selected from:
  • the europium oxide powder when fired at high temperature in a nitrogen atmosphere is reduced into divalent oxide (EuO) and becomes a light emission source.
  • EuO divalent oxide
  • the lithium oxide powder promotes the generation of a nucleus for the production of an ⁇ -sialon crystal and by being solid-dissolved in the crystal lattice, accelerates the production of an ⁇ -sialon phase as well as the resultant invasion and solid-dissolution of Eu atom to raise the emission intensity.
  • lithium oxide Li 2 O
  • a precursor becoming lithium oxide upon thermal decomposition is preferably contained.
  • a number of aggregated particles or fused particles are produced and the effects of the production method of the present invention tend to be disadvantageously decreased.
  • the calcium oxide powder is solid-dissolved in an ⁇ -sialon crystal lattice to expand the lattice spacing of the ⁇ -sialon phase and along the expansion of the lattice, the amount of Eu atom invaded and solid-dissolved is increased to raise the emission intensity.
  • Blending of raw material substances for obtaining he first raw material powder is performed by charging respective raw material substances and a grinding medium into a mixing vessel and grinding and mixing these for 0.25 to 2 hours in a grinder such as ball mill or vibration mill.
  • the firing in the first step is performed in a nitrogen-containing inert gas atmosphere, preferably in a nitrogen atmosphere.
  • a nitrogen-containing silane compound and/or an amorphous silicon nitride powder-containing silicon nitride powder the firing is performed at a crystallization initiating temperature in a range of 1,150°C to 1,250°C while slowly raising the temperature at a temperature rise rate of approximately from 10 to 100°C/hour to 1,400 to 1,800°C, whereby a fired powder of equiaxial crystal mainly comprising a crystalline silicon nitride and/or a silicon nitride-containing composite nitride, in the form of primary particles being dispersed, can be obtained.
  • the temperature rise rate is less than 10°C/hour, firing requires a long time and the productivity decreases, whereas if it exceeds 100°C, a powder containing a needle-like crystal or a hazy aggregated or fused particle is disadvantageously obtained after the firing.
  • the fired powder in the first step is passed through a sieve having an opening of 350 to 590 ⁇ m for obtaining a good mixed state with a second raw material and then used as the first raw material powder.
  • the objective sialon-based phosphor is Li x' Ca x" Si 12-(m+n) Al (m+n) O n N 16-n :Eu y (wherein 0.3 ⁇ x'+x"+y ⁇ 1.5, 0 ⁇ y ⁇ 0.7, 0.3 ⁇ m ⁇ 4.5 and 0 ⁇ n ⁇ 2.25), at least one kind of a metal compound selected from the group consisting of:
  • the obtained mixed powder is filled in a silicon nitride-made crucible and fired at 1,500 to 2,000°C.
  • the firing atmosphere the firing is performed in a nitrogen-containing inert gas atmosphere, preferably a nitrogen atmosphere, but a slight amount of hydrogen, ammonia, hydrocarbon (e.g., methane, ethane) or carbon monoxide may be flowed.
  • a first raw material powder is obtained by employing the same first step as in the production method above.
  • the objective sialon-based phosphor is Li x' Ca x" Si 12-(m+n) Al (m+n) O n N 16-n :Eu y (wherein 0.3 ⁇ x'+x"+y ⁇ 1.5, 0 ⁇ y ⁇ 0.7, 0.3 ⁇ m ⁇ 4.5 and 0 ⁇ n ⁇ 2.25), as for blending of the raw materials in the second step, at least one kind of a metal compound selected from the group consisting of:
  • the atmosphere at the time of weighting and mixing the raw material powders used in the second step may be an air atmosphere but when the humidity is high, care needs to be taken, because a part of aluminum nitride is hydrolyzed or oxidized to increase the oxygen concentration in the raw material powder and, as a result, the production ratio of an aggregated particle or a fused particle increases.
  • the thus-prepared mixed powder is used as a second raw material powder after passing the mixed powder through a sieve having an opening of 350 to 590 ⁇ m for obtaining a good mixed state with the first raw material.
  • the obtained first and second raw material powders are weighed and mixed to give an ⁇ -sialon composition represented by Li x' Ca x" Si 12-(m+n) Al (m+n) O n N 16-n :Eu y , whereby a mixed powder having a desired composition is obtained.
  • the obtained mixed powder is filled in a silicon nitride-made crucible and fired at 1,500 to 2,000°C.
  • a graphite-made crucible, a silicon carbide-made crucible, and a boron nitride-made crucible may be used, other than a silicon nitride-made crucible.
  • the inner wall is preferably coated with silicon nitride, boron nitride or the like.
  • the firing is performed in a nitrogen-containing inert gas atmosphere at 1 atm.
  • the firing may be performed in a nitrogen-containing inert gas atmosphere under pressure.
  • the firing is preferably performed in a nitrogen atmosphere, but a slight amount of hydrogen, ammonia, hydrocarbon (e.g., methane, ethane) or carbon monoxide may be flowed.
  • the firing temperature in a nitrogen atmosphere at 1 atm is from 1,500 to 1,800°C, preferably from 1,550 to 1,750°C. If the firing temperature is less than 1,500°C, heating for a long time is necessary for the production of a desired ⁇ -sialon-based oxynitride powder and this is not practical. Also, the production ratio of an ⁇ -sialon phase in the produced powder decreases. In a nitrogen atmosphere at 1 atm, if the temperature exceeds 1,800°C, silicon nitride and sialon are sublimated and decomposed and free silicon is disadvantageously produced.
  • the firing time is less than 1 hour, the emission intensity of the obtained sialon-based oxynitride phosphor is low, whereas if the firing time is excessively long, productivity is bad.
  • the proportion of a fused particle or a coarse particle tends to increase.
  • the firing in a nitrogen gas atmosphere under pressure, the firing may be performed in a temperature range of 1,600 to 2,000°C, preferably from 1,600 to 1,900°C.
  • the firing temperature may be elevated by raising the nitrogen gas pressure and, for example, the powder mixture can be fired at 1,600 to 1,850°C under nitrogen gas pressure of 5 atm and at 1,600 to 2,000°C under nitrogen gas pressure of 50 atm.
  • the objective sialon-based phosphor is Li x' Ca x" Si 12-(m+n) Al (m+n) O n N 16-n :Eu y (wherein 0.3 ⁇ x'+x"+y ⁇ 1.5, 0 ⁇ y ⁇ 0.7, 0.3 ⁇ m ⁇ 4.5 and 0 ⁇ n ⁇ 2.25)
  • at least one kind of a calcium compound selected from calcium nitride (Ca 3 N 2 ), calcium oxynitride (Ca(O,N)), calcium oxide (CaO) and a precursor substance becoming calcium oxide upon thermal decomposition, lithium oxide (Li 2 O) or a precursor substance becoming lithium oxide upon thermal decomposition, and a silicon nitride powder are charged
  • the grinding and mixing time is less than 0.25 hours, the mixing is insufficient and this gives rise to reduction in the emission intensity of the obtained sialon-based oxynitride phosphor, whereas if the grinding and mixing time exceeds 2 hours, the mixed amount of the grinding medium increases.
  • an aluminum nitride powder or an aluminum oxynitride powder is added to the first raw material powder, and these powders are weighed and mixed to give an ⁇ -sialon composition represented by the general formula: M x Si 12-(m+n) Al (m+n) O n N 16-n :Ln y , whereby a mixed powder having a desired composition is obtained.
  • the aluminum compound added in the second step is two or more kinds of aluminum compound powders selected from the group consisting of an aluminum nitride powder, an aluminum oxynitride powder, an aluminum oxide powder and a precursor powder becoming aluminum oxide upon thermal decomposition
  • a mixed powder is obtained by previously mixing two or more kinds of selected aluminum compound powders to obtain a first second raw material, and weighing and mixing the first raw material powder and the second raw material powder to give the ⁇ -sialon composition above.
  • the atmosphere at the time of weighting and mixing the raw material powders used in the second step may be an air atmosphere but when the humidity is high, care needs to be taken, because a part of aluminum nitride is hydrolyzed or oxidized to increase the oxygen concentration in the raw material powder and, as a result, the production ratio of an aggregated particle or a fused particle increases.
  • the fired powder obtained in the third step is acid-treated using a mineral acid to remove the excessive glass phase.
  • a mineral acid for example, 0.1 to 6 N nitric acid is added and the powder is stirred for 1 to 10 hours, whereby the excessive glass phase is eluted and removed. If the nitric acid concentration is less than 0.1 N, the elution of the glass phase is insufficient and the emission intensity of the obtained phosphor decreases, whereas if it exceeds 6 N, the treatment becomes excessive and the cost for waste treatment and the like disadvantageously rises.
  • the mineral acid sulfuric acid, hydrochloric acid, hydrofluoric acid or a mixed solution of these mineral acids is used, other than nitric acid.
  • the slurry after acid treatment is subjected to water washing, wet sieving, filtration and dried, whereby an ⁇ -sialon-based oxynitride powder having a desired particle size is obtained.
  • the drying is performed, for example, at 120°C.
  • any one of an aluminum nitride (AlN) powder alone, a mixed powder of AlN and aluminum (Al), and a mixed powder of an AlN powder and an aluminum oxide or a precursor substance becoming an oxide of aluminum upon thermal decomposition is used and added as an aluminum nitride source and/or aluminum oxide source necessary for the production of an ⁇ -sialon.
  • Examples of the precursor substances becoming an oxide of a metal M, becoming an oxide of a lanthanide metal Ln and becoming an oxide of aluminum upon thermal decomposition include a hydroxide, a carbonate, an ammonium hydrogen carbonate, a nitrate and an alkoxide of each element, and these are each used in a powder state.
  • examples of the precursor substance becoming lithium oxide upon thermal decomposition include lithium carbonate (Li 2 CO 3 ), lithium hydroxide (LiOH) and lithium nitrate (LiNO 3 ).
  • Examples of the precursor substance becoming calcium oxide upon thermal decomposition include calcium carbonate (CaCO 3 ), calcium hydroxide (Ca(OH) 2 ), calcium nitrate (Ca(NO 3 ) 2 ) and calcium chloride (CaCl 2 ).
  • Examples of the precursor substance becoming aluminum oxide (Al 2 O 3 ) upon thermal decomposition include aluminum hydroxide (Al(OH) 3 ) and an ammonium dawsonite salt of aluminum (AACH(NH 4 AlCO 3 (OH) 2 )).
  • Examples of the precursor becoming an oxide of a lanthanide metal Ln upon thermal decomposition include, in the case of europium oxide (Eu 2 O 3 ), Eu 2 (C 2 O 4 ) 3 , Eu(OH) 3 , EuCl 3 , Eu(NO 3 ) 3 .
  • the amount of the lithium carbonate powder added is preferably 0.03 ⁇ x' ⁇ 0.20 in terms of the compositional ratio x' in Li x' Ca x" Si 12-(m+n) Al (m+n) O n N 16-n :Eu y . If x' is less than 0.03, the effect of raising the emission intensity of the obtained sialon-based oxynitride phosphor becomes small, whereas if x' exceeds 0.20, the amount of oxygen carried over from the raw material such as lithium carbonate increases and the oxygen concentration of the obtained sialon-based oxynitride phosphor rises to bring about an increase in the proportion of a fused particle or an aggregated particle.
  • Examples of the nitrogen-containing silane compound for use in the present invention include silicon diimide (Si(NH) 2 ), silicon tetraamide, silicon nitrogen imide and silicon chloroimide. These are produced by a known method, for example, a method of reacting a silicon halide such as silicon tetrachloride, silicon tetrabromide or silicon tetraiodide with ammonia in a gas phase, or a method of reacting the silicon halide above in a liquid form with liquid ammonia.
  • silicon diimide Si(NH) 2
  • silicon tetraamide silicon nitrogen imide
  • silicon chloroimide silicon chloroimide
  • the amorphous silicon nitride powder those produced by a known method, for example, a method of thermally decomposing the nitrogen-containing silane compound above at a temperature of 600 to 1,200°C in a nitrogen or ammonia gas atmosphere, or a method of reacting a silicon halide such as silicon tetrachloride, silicon tetrabromide or silicon tetraiodide with ammonia at a high temperature, are used.
  • the average particle diameter of the amorphous silicon nitride powder and nitrogen-containing silane compound is usually from 0.005 to 0.05 ⁇ m.
  • the nitrogen-containing silane compound and amorphous silicon nitride powder are readily hydrolyzed or oxidized and therefore, these raw material powders each is weighed in an inert gas atmosphere.
  • Mixing of raw material powders in the first step is performed in an inert gas atmosphere.
  • the nitrogen-containing silane compound or amorphous silicon nitride powder as a raw material is oxidized to raise the oxygen concentration in the raw material power, and the proportion of a fused particle or an aggregated particle in the obtained sialon-based oxynitride phosphor increases.
  • the proportion of a crystalline component in the silicon nitride powder used as a raw material exceeds 95 wt%, the first raw material powder obtained in the first step is firmly fused to worsen the mixed state in the second step. Also, the sialon-based oxynitride powder obtained in the third step is firmly fused and is hard, and a strong grinding treatment is disadvantageously required.
  • crystalline silicon nitride having a particle diameter of 0.1 to 10 ⁇ m may be used, but as the particle diameter of the crystalline silicon nitride is smaller, fuse bonding and sintering of the fired powder obtained in the first and third steps more proceeds, and the powder becomes hard and requires a grinding treatment for a long time.
  • the proportion of a crystalline component in the silicon nitride powder used as a raw material is from 5 to 95 wt%, the reactivity is high and a sialon powder can be produced with good efficiency by a normal powder firing method of mixing starting materials and firing the mixture in a crucible.
  • the sialon powder obtained by this production method is mainly composed of an aggregated particle of 20 ⁇ m or more and for obtaining a phosphor powder having a desired particle size, a grinding treatment is still needed.
  • the first raw material powder is preferably prepared in the first step by mixing at least one kind of a metal compound selected from a nitride, an oxynitride, an oxide or a precursor substance becoming an lanthanide metal Ln oxide upon thermal decomposition, of a lanthanide metal Ln, and a nitride, an oxynitride, an oxide or a precursor substance becoming a metal M oxide upon thermal decomposition, of a metal M (M is at least one metal selected from Li, Ca, Mg, Y and a lanthanide metal excluding La, Ce, Pr, Eu, Dy, Er, Tb and Yb), to a silicon nitride powder in which the proportion of crystalline silicon nitride is less than 5 wt% and the remaining is amorphous silicon nitride and/or nitrogen-containing silane compound, and firing the mixture at 1,400 to 1,800°C in a nitrogen-containing inert gas atmosphere.
  • a metal compound selected from a
  • the primary particles are in an almost monodisperse state and the number of aggregated particles and fused particles is very small.
  • a ⁇ -sialon-based oxynitride phosphor obtained according to a conventional technique by employing a production method of previously mixing all raw material powders at the same time and firing the mixture the production ratio of a particle of less than 20 ⁇ m is less than 60 wt% and the emission intensity of a particle having a particle diameter of less than 20 ⁇ m is low. This is considered because the defect on the particle surface increases. If the particle diameter exceeds 20 ⁇ m, when applied to white LED, the emission intensity becomes extremely non-uniform due to aggregation of particles and this is not preferred.
  • the ⁇ -sialon-based oxynitride phosphor of the present invention has a characteristic feature that the production ratio of a particle having a particle diameter of 2 to 20 ⁇ m is 85 wt% or more, the aggregation is less allowed and moreover, the emission intensity of a particle having a particle diameter of 20 ⁇ m is high.
  • the method for mixing the first raw material powder and the second raw material powder is not particularly limited and there may be employed a method that is itself known, for example, a method of dry-mixing the powders, and a method of wet-mixing the powders in an inactive medium which does not substantially react with respective raw material substances, and then removing the solvent.
  • a V-shaped mixer, a rocking mixer, a ball mill, a vibration mill, a medium stirring mill and the like may be suitably used.
  • Respective raw material powders and a grinding medium are put in a vessel and ground and mixed for 0.25 to 2 hours by using a grinder such as ball mill or vibration mill. If the grinding and mixing time is less than 0.25 hours, the mixing is insufficient and this gives rise to reduction in the emission intensity of the obtained sialon phosphor, whereas if the grinding and mixing time exceeds 2 hours, the mixed amount of the grinding medium increases.
  • the heating furnace used for the firing in the first and third steps is not particularly limited, and there may be used, for example, a batch electric furnace using a high frequency induction heating system or resistance heating system, a rotary kiln, a fluidized kiln or a pusher type electric furnace.
  • the rare earth element-activated ⁇ -sialon-based phosphor of the present invention may be kneaded with a transparent resin such as epoxy resin or acrylic resin by a known method to produce a coating agent, and a light-emitting diode surface-coated with the coating agent is used as a high-brightness lighting device such as white LED, or as an image display device using an excitation source such as electron beam.
  • a transparent resin such as epoxy resin or acrylic resin
  • FlowSorb Model 2300 manufactured by Shimadzu Corp. was used for the measurement of the specific surface area.
  • a sample was put into a cell and after deaeration treatment, a nitrogen gas was adsorbed and desorbed.
  • the specific surface area was determined by a BET one-point method from the amount of gas desorbed.
  • a laser diffraction/scattering particle size distribution analyzer Model LA-910, manufactured by Horiba Ltd. was used.
  • the sample was uniformly dispersed in water by adding SN Dispersant 5468 produced by San Nopco Ltd. as a dispersant and using an ultrasonic bath at an output of 100 W.
  • the liquid dispersion was poured in the analyzer, and the weight-basis particle diameter distribution was measured by laser diffraction/scattering method and converted into a sub-sieve integrated distribution curve.
  • the refractive index of the ⁇ -sialon-based oxynitride particle was set to 1.28.
  • a scanning electron microscope JSM T-220, manufactured by JEOL Ltd. was used. After applying vapor deposition of gold to the powder sample dispersed on the stage, the sample was loaded in the apparatus and the particle form was observed at a magnification of 1,000 to 3,000.
  • the scanning electron micrograph of the produced powder was image-analyzed to determine the primary particle diameter.
  • the outer profile of individual primary particles was decided, and a long axis diameter was determined from the direction wider in the width out of the outer profile of the particle, while determining a short axis diameter from the dimension on the narrower width side crossing with the long axis at right angles.
  • the measurement of the long axis diameter and short axis diameter was performed for 500 or more particles.
  • the majority of the produced powder were an equiaxial particle having an aspect ratio of less than 1.5 and therefore, the primary particle diameter was calculated as a geometric mean of short axis diameters and long axis diameters.
  • Silicon diimide (Si(NH) 2 ) obtained by reacting silicon tetrachloride with ammonia at a temperature lower than room temperature was decomposed under heating at 700 to 1,200°C to obtain silicon nitrogen imide (Si 2 N 2 NH) and/or amorphous silicon nitride powder.
  • the metal impurity content of the silicon nitrogen imide (Si 2 N 2 NH) and/or amorphous silicon nitride powder was 10 ppm or less.
  • a compound(s) as a silicon nitride source(s) selected from nitrogen-containing silane compounds (silicon diimide (Si(NH) 2 ) and silicon nitrogen imide (Si 2 N 2 NH)
  • Si(NH) 2 ) silicon diimide
  • Si 2 N 2 NH silicon nitrogen imide
  • a europium oxide (Eu 2 O 3 ) powder, a lithium carbonate (Li 2 CO 3 ) powder and a calcium carbonate (CaCO 3 ) powder were weighed and added to the silicon nitride raw material to give a chemical composition of Si 9.25 Eu 0.15 Ca 0.62 Li 0.10 O 0.89 N 12.33 after firing, and these were mixed by a vibration mill for 25 minutes in a nitrogen atmosphere.
  • the mixed powder was filled in a silicon nitride-made crucible, the crucible was set in an electric furnace of resistance heating system, and the furnace was heated in a nitrogen gas atmosphere by a temperature-rising schedule of holding the furnace at from temperature to 1,150°C for 2 hours and raising the temperature from 1,150°C to 1,250°C at 50°C/h and from 1,250°C to 1, 635°C at 100°C/h and then held at 1, 635°C for 1 hour to effect firing, whereby a first raw material powder was obtained.
  • the fired powder was observed by a scanning electron microscope, as a result, there was produced a powder where the primary particles each composed of an equiaxial crystal were dispersed and the number of aggregated particles and fused particles was extremely small.
  • the first raw material was passed through a sieve with an opening of 350 ⁇ m.
  • AlN aluminum nitride
  • Al 2 O 3 aluminum oxide
  • the first raw material powder and the second raw material powder each was weighed to give a chemical composition of Ca 0.62 Eu 0.15 Li 0.10 Si 9.25 Al 2.75 O 1.07 N 14.94 and make a total amount of 75 g, and these powders were put in a 1 liter-volume polyethylene-made vessel and mixed while rotating the vessel at a rotation number of 82 rpm for 3 minutes.
  • the raw material powder obtained by mixing was filled in a silicon nitride-made crucible, the crucible was set in an electric furnace of resistance heating system, and the furnace was heated in a nitrogen gas atmosphere by a temperature-rising schedule of holding the furnace at from temperature to 1,200°C for 2 hours and raising the temperature from 1,200°C to 1,650°C at 200°C/h and then held at 1,650°C for 20 hours to effect firing.
  • the resultant fired power was lightly crushed in a silicon nitride-made mortar, and 20 g of the ⁇ -sialon-based powder after crushing was put in a 250 ml-volume polyethylene-made vessel together with 205 g of an aqueous 1 N nitric acid solution and acid-treated while rotating the vessel at a rotation number of 102 rpm for 5 hours.
  • the slurry after acid treatment was passed through a sieve with an opening of 10 ⁇ m, then washed with water, filtered and dried in a drier at a preset temperature of 120°C for 6 hours.
  • the ⁇ -sialon-based powder obtained through the steps above was subjected to analysis of the chemical composition, observation of a particle form by an electron microscope, and evaluation of powder properties such as specific surface area and particle size distribution.
  • the scanning electron micrograph of the produced powder was image-analyzed to determine the primary particle diameter.
  • individual primary particles were decided on the outer profile, and a long axis diameter was determined from the direction wider in the width out of the outer profile of the particle, while determining a short axis diameter from the dimension on the narrower width side crossing with the long axis at right angles.
  • the measurement of the long axis diameter and short axis diameter was performed for 500 or more particles.
  • the majority of the produced powder were an equiaxial particle having an aspect ratio of less than 1.5 and therefore, the primary particle diameter was calculated as a geometric mean of short axis diameters and long axis diameters.
  • the excitation spectrum at a detection wavelength of 570 to 595 nm and the emission spectrum at an excitation wavelength of 450 nm were measured using a fluorescence measuring apparatus (FP-6500, manufactured by JASCO).
  • the fluorescence property is shown in Table 2 by a relative value when the value of highest emission intensity (peak strength at 564 nm) of the emission spectrum by the same excitation wavelength of a commercially available YAG:Ce-based fluorescent material (P46Y3, produced by Kasei Optonix, Ltd.) is taken as 100.
  • An ⁇ -sialon-based oxynitride phosphor was obtained by repeating the same operation as in Example 1, except that the blending ratio of the compound(s) working as a silicon nitride source(s) selected from nitrogen-containing silane compounds (silicon diimide (Si(NH) 2 ) and silicon nitrogen imide (Si 2 N 2 NH)), amorphous silicon nitride and crystalline silicon nitride and the firing conditions in the first and second steps were slightly changed.
  • the conditions in the synthesis of the ⁇ -sialon-based oxynitride phosphor comprising first and second steps are shown in Table 1, and the powder properties and fluorescent properties of the obtained oxynitride phosphor are shown in Table 2.
  • Fig. 2 illustrates the emission spectrum at an excitation wavelength of 450 nm of the ⁇ -sialon-based oxynitride phosphor obtained in Example 2 together with the emission spectra of the ⁇ -sialon-based oxynitride phosphor obtained in Comparative Example 4 and a commercially available YAG:Ce-based fluorescent material (P46Y3, produced by Kasei Optonix, Ltd.).
  • Example 1 those obtained by blending a compound(s) working as a silicon nitride source(s) selected from nitrogen-containing silane compounds (silicon diimide (Si(NH) 2 ) and silicon nitrogen imide (Si 2 N 2 NH)), amorphous silicon nitride and crystalline silicon nitride to give a chemical composition shown in Table 1 were used as the silicon nitride raw material.
  • a compound(s) working as a silicon nitride source(s) selected from nitrogen-containing silane compounds (silicon diimide (Si(NH) 2 ) and silicon nitrogen imide (Si 2 N 2 NH)
  • Si(NH) 2 ) silicon diimide
  • Si 2 N 2 NH silicon nitrogen imide
  • a europium oxide (Eu 2 O 3 ) powder and a lithium oxide precursor powder were weighed and added to the silicon nitride raw material to give a chemical composition of Si 12-(m+n) Eu y Li x' O 0.5x'+1.5y- ⁇ N 16-4(m+n)/3 (wherein 0 ⁇ 0.5y), and these were mixed by a vibration mill under the conditions shown in Table 1 in a nitrogen atmosphere.
  • the mixed powder was filled in a silicon nitride-made crucible, the crucible was set in an electric furnace of resistance heating system, and the furnace was heated in a nitrogen gas atmosphere by a temperature-rising schedule of holding the furnace at from temperature to 1,150°C for 2 hours and raising the temperature from 1,150°C to 1,250°C at 50°C/h and from 1,250°C to a predetermined holding temperature at 100°C/h and then held under the conditions shown in Table 1 for 1 hour to effect firing, whereby a first raw material powder was obtained.
  • the X-ray diffraction measurement of the fired powder revealed that the ⁇ -Si 3 N 4 phase content was 94% or more.
  • the fired powder was observed by a scanning electron microscope, as a result, there was produced a powder where the primary particles each composed of an equiaxial crystal were dispersed and the number of aggregated particles and fused particles was extremely small.
  • the first raw material was passed through a sieve with an opening of 350 ⁇ m.
  • an aluminum nitride (AlN) powder, an aluminum oxide (Al 2 O 3 ) powder and a calcium carbonate (CaCO 3 ) powder were weighed to give a predetermined chemical composition and mixed by a vibration mill under the conditions shown in Table 1 in an air atmosphere to obtain a second raw material powder.
  • the second raw material powder was also passed through a sieve with an opening of 350 ⁇ m.
  • the first raw material powder and the second raw material powder each was weighed to be blended at a ratio giving a chemical composition of Ca x" Eu y Li x' Si 12-(m+n) Al (m+n) O n N 16-n and make a total amount of 75 g, and these powders were put in a 1 liter-volume polyethylene-made vessel and mixed while rotating the vessel at a rotation number of 82 rpm for 3 minutes.
  • the raw material powder obtained after mixing was fired by the same operation as in Example 1 under the conditions shown in Table 1. The resultant fired power was crushed, acid-treated, washed with water, filtered and dried in the same manner as in Example 1.
  • Fig. 1 illustrates a scanning electron micrograph of the ⁇ -sialon-based oxynitride powder obtained in Example 9.
  • An ⁇ -sialon-based oxynitride phosphor was obtained by repeating the same operation as in Example 1 except that in the raw material preparation of the first step, a europium oxide (Eu 2 O 3 ) powder and a calcium carbonate (CaCO 3 ) powder were weighed and added to the silicon nitride raw material to give a chemical composition of Si 12-(m+n) Eu y Ca x" O x"+1.5y- ⁇ N 16-4(m+n)/3 after firing and these were mixed by a vibration mill for 45 minutes in a nitrogen atmosphere.
  • the conditions in the synthesis of the ⁇ -sialon-based oxynitride phosphor comprising first and second steps are shown in Table 1, and the powder properties and fluorescent properties of the obtained
  • An ⁇ -sialon-based oxynitride phosphor was obtained by repeating the same operation as in Example 1 except that in the raw material preparation of the second step, only an aluminum nitride (AlN) powder was used as the aluminum source.
  • AlN aluminum nitride
  • Table 1 The conditions in the synthesis of the ⁇ -sialon-based oxynitride phosphor comprising first and second steps are shown in Table 1, and the powder properties and fluorescent properties of the obtained oxynitride phosphor are shown in Table 2.
  • An ⁇ -sialon-based oxynitride phosphor was obtained by repeating the same operation as in Example 17 except that in the raw material preparation of the first step, calcium nitride (Ca 3 N 2 ) was used as the calcium source in place of the calcium carbonate (CaCO 3 ) powder.
  • the conditions in the synthesis of the ⁇ -sialon-based oxynitride phosphor comprising first and second steps are shown in Table 1, and the powder properties and fluorescent properties of the obtained oxynitride phosphor are shown in Table 2.
  • An ⁇ -sialon-based oxynitride phosphor was obtained by repeating the same operation as in Example 17 except that in the raw material preparation of the first step, calcium nitride (Ca 3 N 2 ) was used as the calcium source in place of the calcium carbonate (CaCO 3 ) powder and europium nitride (EuN) was used as the europium source in place of europium oxide (Eu 2 O 3 ).
  • the conditions in the synthesis of the ⁇ -sialon-based oxynitride phosphor comprising first and second steps are shown in Table 1, and the powder properties and fluorescent properties of the obtained oxynitride phosphor are shown in Table 2.
  • An ⁇ -sialon-based oxynitride phosphor was obtained by repeating the same operation as in Example 3 except that in the raw material preparation of the first step, a by repeating the same operation as in Example 3 except that in the raw material preparation of the first step, a europium oxide (Eu 2 O 3 ) powder was weighed and added to the silicon nitride raw material to give a chemical composition of Si 12-(m+n) Eu y O 1.5y- ⁇ N 16-4(m+n)/3 after firing and these were mixed.
  • the conditions in the synthesis of the ⁇ -sialon-based oxynitride phosphor comprising first and second steps are shown in Table 1, and the powder properties and fluorescent properties of the obtained oxynitride phosphor are shown in Table 2.
  • a first raw material powder was obtained by repeating the same operation as in Example 3 except that a europium oxide (Eu 2 O 3 ) powder was weighed and added to the silicon nitride raw material to give a chemical composition of Si 12-(m+n) Eu y O 1.5y- ⁇ N 16-4(m+n)/3 after firing and these were mixed.
  • the X-ray diffraction measurement of the fired powder revealed that the ⁇ -Si 3 N 4 phase content was 95%.
  • the fired powder was observed by a scanning electron microscope, as a result, there was produced a powder where the primary particles each composed of an equiaxial crystal were dispersed and the number of aggregated particles and fused particles was extremely small.
  • the first raw material was passed through a sieve with an opening of 350 ⁇ m.
  • an aluminum nitride (AlN) powder, an aluminum oxide (Al 2 O 3 ) powder, a calcium carbonate (CaCO 3 ) powder, a lithium carbonate (Li 2 CO 3 ) powder and the fist raw material powder each was weighed to be blended at a ratio giving a chemical composition of Ca x" Eu y Li x' Si 12-(m+n) Al (m+n) O n N 16-n after firing and make a total amount of 75 g, and these powers were put in a 1 liter-volume polyethylene-made vessel and mixed while rotating the vessel at a rotation number of 82 rpm for 3 minutes. This mixed powder was also passed through a sieve with an opening of 350 ⁇ m.
  • the raw material powder obtained after mixing was fired by the same operation as in Example 3 under the conditions shown in Table 1.
  • the resultant fired power was crushed, acid-treated, washed with water, filtered and dried in the same manner as in Example 3 to obtain an ⁇ -sialon-based oxynitride phosphor.
  • the conditions in the synthesis of the ⁇ -sialon-based oxynitride phosphor comprising first and second steps are shown in Table 1, and the powder properties and fluorescent properties of the obtained oxynitride phosphor are shown in Table 2.
  • the metal impurity content of the amorphous silicon nitride powder was 10 ppm or less.
  • An amorphous silicon nitride powder was used as the silicon nitride raw material and a europium oxide (Eu 2 O 3 ) powder, a calcium nitride (Ca 3 N 2 ) powder and an aluminum nitride (AlN) powder were weighed and added to the silicon nitride raw material to give a chemical composition of Ca x" Eu y Si 12-(m+n) Al (m+n) O n N 16-n- ⁇ after firing, and these were mixed by a vibration mill for a predetermined time in a nitrogen atmosphere to obtain a raw material powder.
  • the raw material powder was passed through a sieve with an opening of 350 ⁇ m.
  • the raw material powder obtained after mixing was filled in a silicon nitride-made crucible, the crucible was set in an electric furnace of resistance heating system, and the furnace was heated in a nitrogen gas atmosphere by a temperature-rising schedule of holding the furnace at from temperature to 1,150°C for 2 hours and raising the temperature from 1,150°C to 1,250°C at 50°C/h and from 1,250°C to a predetermined holding temperature at 100°C/h and then held under the conditions shown in Table 1 for 16 hours to effect firing.
  • the resultant fired powder was crushed, acid-treated, washed with water, filtered and dried in the same manner as in Example 1.
  • a europium oxide (Eu 2 O 3 ) powder, a lithium carbonate (Li 2 CO 3 ) powder, a calcium carbonate(CaCO 3 ) powder and an aluminum source compound selected from an aluminum nitride (AlN) powder and an aluminum oxide (Al 2 O 3 ) powder were weighed and added to an amorphous silicon nitride powder to give a chemical composition of Ca x" Eu y Li x' Si 12-(m+n) Al (m+n) O n N 16-n after firing, and these were mixed by a vibration mill for a predetermined time in a nitrogen atmosphere to obtain a raw material powder.
  • the raw material powder was passed through a sieve with an opening of 350 ⁇ m.
  • the raw material powder obtained after mixing was fired in the same manner as in Comparative Example 1 under the conditions shown in Table 1, and the fired powder crushed, acid-treated, washed with water, filtered and dried in the same manner as in Example 1.
  • the ⁇ -sialon-based powder obtained through the steps above was subjected to analysis of the chemical composition, observation of a particle form by an electron microscope, and evaluation of powder properties such as specific surface area and particle size distribution.
  • the scanning electron micrograph of the produced powder was image-analyzed to determine the primary particle diameter.
  • the produced powder was an equiaxial particle having an aspect ratio of less than 1.2 and therefore, the primary particle diameter was measured as an average of short axis diameters and long axis diameters.
  • the excitation spectrum at a detection wavelength of 570 to 595 nm and the emission spectrum at an excitation wavelength of 450 nm were measured using a fluorescence measuring apparatus (FP-6500, manufactured by JASCO).
  • the fluorescence property is shown in Table 2 by a relative value when the value of highest emission intensity (peak strength at 564 nm) of the emission spectrum by the same excitation wavelength of a commercially available YAG:Ce-based fluorescent material (P46Y3, produced by Kasei Optonix, Ltd.) is taken as 100.
  • silicon nitride raw material Those obtained by blending a compound(s) working as a silicon nitride source(s) selected from silicon nitrogen imide (Si 2 N 2 NH), amorphous silicon nitride and crystalline silicon nitride to give a chemical composition shown in Table 1 were used as the silicon nitride raw material.
  • silicon nitrogen imide Si 2 N 2 NH
  • amorphous silicon nitride and crystalline silicon nitride to give a chemical composition shown in Table 1 were used as the silicon nitride raw material.
  • a europium oxide (Eu 2 O 3 ) powder, a calcium carbonate (CaCO 3 ) powder, an aluminum nitride (AlN) powder and an aluminum oxide (Al 2 O 3 ) powder were weighed and added to the silicon nitride raw material to give a chemical composition of Ca x" Eu y Si 12-(m+n) Al (m+n) O n N 16-n , and these were mixed by a vibration mill under the conditions shown in Table 1 in a nitrogen atmosphere.
  • the raw material powder obtained after mixing was fired in the same manner as in Comparative Example 1 under the conditions shown in Table 1, and the fired powder was crushed, acid-treated, after passing through a sieve with a predetermined opening (from 10 to 20 ⁇ m), washed with water, filtered and dried in the same manner as in Comparative Example 1.
  • Fig. 2 illustrates the emission spectrum at an excitation wavelength of 450 nm of the ⁇ -sialon-based oxynitride phosphor obtained in Comparative Example 4 together with the emission spectra of the ⁇ -sialon-based oxynitride phosphor obtained in Example 2 and a commercially available YAG:Ce-based fluorescent material (P46Y3, produced by Kasei Optonix, Ltd.).
  • such a phosphor where the primary particle diameter is large and the aggregation index defined as the ratio between the median diameter (secondary particle diameter) in the particle size distribution curve and the primary particle diameter is 3.0 or less has remarkably high fluorescence intensity as compared with a phosphor obtained by the conventional production method.
  • a lighting device using a phosphor comprising the sialon-based oxynitride of the present invention is described below.
  • a so-called cannonball-type white light-emitting diode (LED) lamp was produced.
  • the sialon-based oxynitride phosphor synthesized in Example 1 was, if desired, mixed with another phosphor powder and then mixed with an epoxy resin.
  • a blue LED element was die-bonded to a recess part for placement of an element therein provided in one of a pair of lead wires, and a lead wire and the lower bottom of the blue light-emitting diode element were electrically connected and fixed.
  • the upper electrode of the blue LED element and another lead wire were electrically connected by wire bonding.
  • an appropriate amount of an epoxy resin containing the phosphor of the present invention was coated by a dispenser to cover the blue LED element and cured to form a first resin part.
  • the tip part of the lead wire, the blue light-emitting diode element and the first resin having dispersed therein a phosphor were sealed in with a second resin.
  • the same epoxy resin was used for both the first resin and the second resin, but another resin such as silicone resin or a transparent material such as glass may be used.
  • the resin a material as much reduced in the deterioration by ultraviolet light as possible is preferably selected.
  • the white LED lamp of this Example is configured to have a lens-like curved surface at the end part and therefore, is commonly called a cannonball type.
  • a cannonball-type white LED lamp was produced in the same manner as in Example 21.
  • color unevenness was slightly observed in the light emitted, fluctuation of brightness and color within and among the lots of the product was large, and the yield of the product was low.
  • a chip-type white LED lamp for substrate mounting shown in Fig. 3 was produced.
  • a liquid epoxy resin having a viscosity of 50 P at room temperature was used as the light-transmitting resin.
  • the ⁇ -sialon-based oxynitride phosphor obtained in Example was mixed with the epoxy resin in a mass ratio of 6:100 to obtain a kneaded product having dispersed therein a phosphor.
  • the kneaded product was coated on LED as the light source and used as a layer that emits fluorescence.
  • a blue LED with the light-emitting layer containing an In n Al m Ga 1-(m+n) N nitride-based semiconductor having a main emission peak at 450 to 470 nm was prepared.
  • this blue LED 2 was fixed with the epoxy resin 1 above.
  • each electrode of the blue LED and each lead electrode 5 were wire-bonded and thereby electrically connected.
  • the epoxy resin containing the ⁇ -sialon-based oxynitride phosphor was poured in the recess part of the molded package 4, in which the blue LED 2 was disposed, and then cured at 120°C for 4 hours to obtain a white LED lamp where the light source was coated with a fluorescent layer.
  • the emission properties were measured for 500 units of each white LED lamp, the average value and standard deviation of emission intensity were examined, and the fluctuation status of properties among devices was grasped. The fluctuation status of color tone was examined.
  • the fluorescence was uniform and free of color unevenness, the fluctuation of brightness and color within and among the lots of the product was small, and the yield of the product was high.
  • a chip-type white light-emitting diode lamp for substrate mounding was produced in the same manner as in Example 22.
  • color unevenness was slightly observed in the light emitted, the fluctuation of brightness and color within and among the lots of the product was large, and the yield of the product was low.
  • Example 1 of the present invention The phosphor obtained in Example 1 of the present invention was coated on the inner face of a cell for a plasma display panel, and a current was passed to the electrode to generate a vacuum ultraviolet ray by Xe discharge in the cell. It was confirmed that the phosphor is excited by this vacuum ultraviolet ray and emits yellow visible light, the light emitted is observed from the outside through the protective layer, dielectric layer and glass substrate, and the device functions as an image display.
  • the high-dispersity phosphor powder with reduced aggregation or fusion bonding and narrow particle size distribution of the present invention can be uniformly mixed with a resin or the like and then easily coated on blue LED, so that a highly-bright white LED can be easily obtained. Furthermore, according to the production method of the present invention, the above-described high-dispersity phosphor powder excellent in miscibility with a resin can be easily obtained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)

Claims (12)

  1. Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente, repräsentiert durch die allgemeine Formel:

            MxSi12-(m+n)Al(m+n)OnN16-n: Lny

    (wobei 0,3≤x+y<1,5, 0<y<0,7, 0,3≤m<4,5, 0<n<2,25, und wenn a die Atomvalenz des Metalls M ist und b die Atomvalenz des Lanthanoids Ln ist, m=ax+by), wobei ein α-Sialon als Hauptkomponente enthalten ist, bei dem ein Teil oder das gesamte Metallelement M (M ist mindestens ein Metall ausgewählt aus der Gruppe bestehend aus Li, Ca, Mg, Ba, Sr, Y und einem Lanthanoid mit Ausnahme von La, Ce, Pr, Eu, Dy, Er, Tb und Yb), das als Feststofflösung in dem α-Sialon vorliegt, durch ein Lanthanoid Ln (Ln ist mindestens ein Lanthanoid ausgewählt aus der Gruppe bestehend aus Ce, Pr, Eu, Dy, Er, Tb und Yb) ersetzt ist, welches als ein Lumineszenzzentrum wirkt,
    wobei (a) der Aggregationsindex, A1=D50/DBET, definiert als das Verhältnis zwischen dem Mediandurchmesser D50 [µm] in der Partikelgrößenverteilungskurve und dem Äquivalenzsphärendurchmesser DBET [µm], berechnet auf Basis der spezifischen BET-Oberfläche, 3,0 oder weniger beträgt, und/oder (b) der Aggregationsindex, A2=D50/DPartiken definiert als das Verhältnis zwischen dem Mediandurchmesser D50 [µm] in der Partikelgrößenverteilungskurve und dem Primärpartikeldurchmesser DPartikel [µm], ermittelt durch die Bildanalyse eines Rasterelektronenmikroskops, 3,0 oder weniger beträgt,
    wobei das Verhältnis D90/D10 zwischen dem 90%-Durchmesser D90 und dem 10%-Durchmesser D10 in der Partikelgrößenverteilungskurve 4,0 oder weniger beträgt, und
    wobei der Leuchtstoff bei einer Anregungswellenlänge von 450 µm eine maximale Emissionswellenlänge von 580 nm bis 589 nm aufweist.
  2. Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach Anspruch 1, wobei der Mediandurchmesser D50 in der Partikelgrößenverteilungskurve 8,0 µm oder weniger beträgt.
  3. Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach Anspruch 1, wobei der Äquivalenzsphärendurchmesser DBET, berechnet auf Basis der spezifischen BET-Oberfläche, 8,0 µm oder weniger beträgt.
  4. Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach Anspruch 1, wobei der Primärpartikeldurchmesser DPartikel, ermittelt durch die Bildanalyse eines Rasterelektronenmikroskops, 8,0 µm oder weniger beträgt.
  5. Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach einem der Ansprüche 1 bis 4, wobei in der allgemeinen Formel:

            MxSi12-(m+n)Al(m+n)OnN16-n:Lny, 1,0≤n≤1,25

    gilt.
  6. Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach einem der Ansprüche 1 bis 4, wobei in der allgemeinen Formel:

            MxSi12-(m+n)Al(m+n)OnN16-n:Lny, 0,5<n<1,0

    gilt, und der Aggregationsindex A1=D50/DBET 2,0 oder weniger beträgt.
  7. Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach einem der Ansprüche 1 bis 4, wobei in der allgemeinen Formel:

            MxSi12-(m+n)Al(m+n)OnN16-n:Lny, 0,5<n<1,0

    gilt, und der Aggregationsindex A2=D50/DPartikel 2,0 oder weniger beträgt.
  8. Leuchtvorrichtung, umfassend eine Emissionslichtquelle und den Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach einem der Ansprüche 1 bis 7, wobei der Leuchtstoff durch die allgemeine Formel repräsentiert wird:

            MxSi12-(m+n)Al(m+n)OnN16-n: Lny

  9. Leuchtvorrichtung, umfassend eine Emissionslichtquelle und einen Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach Anspruch 8, wobei die Emissionslichtquelle eine LED ist, die Licht bei einer Wellenlänger von 330 bis 500 µm emittiert.
  10. Bildanzeigevorrichtung, umfassend eine Anregungsquelle und den Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach einem der Ansprüche 1 bis 7, wobei der Leuchtstoff durch die allgemeine Formel repräsentiert wird:

            MxSi12-(m+n)Al(m+n)OnN16-n: Lny

  11. Bildanzeigevorrichtung, umfassend eine Anregungsquelle und einen Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach Anspruch 10, wobei die Anregungsquelle ausgewählt ist aus der Gruppe bestehend aus einem Elektronenstrahl, einem elektrischen Feld, einem Vakuum-UV-Strahl und einem UV-Strahl.
  12. Bildanzeigevorrichtung, umfassend eine Anregungsquelle und einen Oxinitridleuchtstoff umfassend ein α-Sialon als Hauptkomponente nach Anspruch 10, wobei die Bildanzeigevorrichtung eine Fluoreszenzanzeige (VFD), eine Feldemissionsanzeige (FED), ein Plasmabildschirm (PDP) oder eine Kathodenstrahlröhre (CRT) ist.
EP07790452.2A 2006-07-05 2007-06-29 Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür Ceased EP2036966B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP14153927.0A EP2730635B1 (de) 2006-07-05 2007-06-29 Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006185134 2006-07-05
PCT/JP2007/063510 WO2008004640A1 (fr) 2006-07-05 2007-06-29 Phosphores d'oxynitrure à base de sialon et procédé de production de ceux-ci

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP14153927.0A Division EP2730635B1 (de) 2006-07-05 2007-06-29 Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür
EP14153927.0A Division-Into EP2730635B1 (de) 2006-07-05 2007-06-29 Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür

Publications (3)

Publication Number Publication Date
EP2036966A1 EP2036966A1 (de) 2009-03-18
EP2036966A4 EP2036966A4 (de) 2011-05-04
EP2036966B1 true EP2036966B1 (de) 2017-10-25

Family

ID=38894607

Family Applications (2)

Application Number Title Priority Date Filing Date
EP07790452.2A Ceased EP2036966B1 (de) 2006-07-05 2007-06-29 Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür
EP14153927.0A Not-in-force EP2730635B1 (de) 2006-07-05 2007-06-29 Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP14153927.0A Not-in-force EP2730635B1 (de) 2006-07-05 2007-06-29 Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür

Country Status (6)

Country Link
US (2) US20090284948A1 (de)
EP (2) EP2036966B1 (de)
JP (2) JP5151980B2 (de)
KR (2) KR101354896B1 (de)
TW (1) TWI428429B (de)
WO (1) WO2008004640A1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8277686B2 (en) * 2004-12-27 2012-10-02 Ube Industries, Ltd. Sialon phosphor particles and production method thereof
JP5470911B2 (ja) * 2009-03-02 2014-04-16 宇部興産株式会社 Ｌｉ含有α−サイアロン系酸窒化物蛍光体粉末およびその製造方法
EP2314659B1 (de) * 2008-08-13 2014-07-23 Ube Industries, Ltd. Li-haltige fluoreszierende beta-sialon-substanz und verfahren zu ihrer herstellung sowie beleuchtungsvorrichtung und bildanzeigevorrichtung
JP5170247B2 (ja) * 2008-08-13 2013-03-27 宇部興産株式会社 Ｌｉ含有α−サイアロン系蛍光体とその製造方法、照明器具ならびに画像表示装置
US8558447B2 (en) 2009-03-31 2013-10-15 Fujifilm Corporation Dispersion-type electroluminescence device
JP5129392B2 (ja) * 2009-08-28 2013-01-30 株式会社東芝 蛍光体の製造方法およびそれにより製造された蛍光体
CN101697367B (zh) * 2009-09-30 2014-04-02 烁光特晶科技有限公司 一种利用透明陶瓷制备led的方法
US8709283B2 (en) 2010-01-08 2014-04-29 Sharp Kabushiki Kaisha Phosphor, light emitting apparatus, and liquid crystal display apparatus using the same
EP2543714B1 (de) * 2010-03-01 2015-02-25 Ube Industries, Ltd. Li-haltige fluoreszierende beta-sialon-partikel, verfahren zu ihrer herstellung sowie beleuchtungsvorrichtung und bildanzeigevorrichtung
JP2011199193A (ja) * 2010-03-23 2011-10-06 Toshiba Corp 発光装置及びその製造方法
WO2011122576A1 (ja) * 2010-03-30 2011-10-06 三菱化学株式会社 発光装置
MY160855A (en) * 2010-03-31 2017-03-31 Ube Industries Production method of sialon-based oxynitride phosphor, and sialon-based oxynitride phosphor
JP5185421B2 (ja) * 2010-09-09 2013-04-17 株式会社東芝 赤色発光蛍光体およびそれを用いた発光装置
KR101243774B1 (ko) * 2010-09-30 2013-03-14 순천대학교 산학협력단 산질화물 형광체
JP2012132000A (ja) * 2010-12-02 2012-07-12 Niigata Univ 結晶性物質の製造方法
JP2012131999A (ja) * 2010-12-02 2012-07-12 Niigata Univ 結晶性物質、並びにそれを用いた発光装置及び白色ｌｅｄ
WO2012101899A1 (ja) * 2011-01-26 2012-08-02 電気化学工業株式会社 α型サイアロン、発光装置及びその用途
TW201219543A (en) * 2011-04-01 2012-05-16 Chi Mei Corp having the formula of Ii-Mm-Aa-Bb-Ot-Nn:Zr and providing the high luminance and durability
KR101290678B1 (ko) 2011-04-15 2013-07-29 한국에너지기술연구원 알루미늄이 결핍된 α-ＳｉＡｌＯＮ계 형광체, 그 제조 방법 및 이를 이용한 ＬＥＤ 칩 패키지
KR101793518B1 (ko) 2011-05-19 2017-11-03 삼성전자주식회사 적색 형광체 및 이를 포함하는 발광장치
EP2767572A4 (de) * 2011-10-12 2015-09-30 Ube Industries Fluoreszierendes oxynitridpulver, siliziumnitridpulver zu seiner herstellung und verfahren zu seiner herstellung
KR101610565B1 (ko) * 2011-11-07 2016-04-07 코쿠리츠켄큐카이하츠호징 붓시쯔 자이료 켄큐키코 형광체 및 제조 방법, 형광체를 사용하는 발광 장치 및 화상 표시 장치
KR101877416B1 (ko) * 2011-11-23 2018-07-11 엘지이노텍 주식회사 산질화물 형광체 및 그를 포함한 발광소자 패키지
JP5926966B2 (ja) * 2012-01-30 2016-05-25 オリンパス株式会社 蛍光観察装置
CN104145003B (zh) 2012-03-29 2016-08-24 宇部兴产株式会社 氧氮化物荧光体粉末
US9938460B2 (en) * 2012-04-02 2018-04-10 National Taiwan University Phosphor, light emitting apparatus and method of forming phosphor
KR20140006365A (ko) * 2012-07-04 2014-01-16 선문대학교 산학협력단 인광체용 세라믹스, 이를 이용한 인광체 및 그 제조방법
CN104736664B (zh) * 2012-10-17 2016-09-14 宇部兴产株式会社 波长转换部件及使用其的发光装置
CN104797684B (zh) * 2012-11-13 2017-03-29 电化株式会社 荧光体、发光元件及照明装置
US10266766B2 (en) 2012-11-13 2019-04-23 Denka Company Limited Phosphor, light-emitting element and lighting device
TWI516572B (zh) 2012-12-13 2016-01-11 財團法人工業技術研究院 螢光材料、及包含其之發光裝置
TWI494413B (zh) 2012-12-22 2015-08-01 Chi Mei Corp 螢光體與發光裝置
KR101439735B1 (ko) * 2013-01-23 2014-09-17 주식회사 효성 녹색 형광체의 제조 방법
TWI464238B (zh) * 2013-03-27 2014-12-11 Chi Mei Corp 螢光體與發光裝置
TWI602904B (zh) * 2013-03-29 2017-10-21 宇部興產股份有限公司 Oxynitride phosphor powder and method of manufacturing the same
JP6205818B2 (ja) * 2013-04-22 2017-10-04 宇部興産株式会社 波長変換部材及びそれを用いた発光装置
US9777215B2 (en) 2013-05-28 2017-10-03 Ube Industries, Ltd. Oxynitride phosphor powder
WO2015115640A1 (ja) * 2014-02-03 2015-08-06 宇部興産株式会社 酸窒化物蛍光体粉末およびその製造方法
CN106164218B (zh) * 2014-03-13 2019-07-19 亮锐控股有限公司 用于固态照明的超四面体磷光体
US10294419B2 (en) * 2015-08-28 2019-05-21 Denka Company Limited Charged particle radiation measuring method and charged particle radiation measuring device
WO2017155111A1 (ja) * 2016-03-11 2017-09-14 デンカ株式会社 蛍光体、発光素子及び発光装置
TWI802542B (zh) * 2016-06-30 2023-05-21 日商電化股份有限公司 螢光體及發光裝置
JP6439844B2 (ja) * 2016-09-29 2018-12-19 日亜化学工業株式会社 窒化物蛍光体の製造方法
JP2018150433A (ja) * 2017-03-10 2018-09-27 デンカ株式会社 橙色蛍光体および発光装置
US10260683B2 (en) 2017-05-10 2019-04-16 Cree, Inc. Solid-state lamp with LED filaments having different CCT's
CN109837085B (zh) * 2017-11-27 2023-11-28 日亚化学工业株式会社 波长转换构件的制造方法、和波长转换构件
WO2019188630A1 (ja) * 2018-03-29 2019-10-03 デンカ株式会社 α型サイアロン蛍光体及び発光装置
DE102019104008B4 (de) * 2019-02-18 2022-02-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtstoff, verfahren zur herstellung eines leuchtstoffs und optoelektronisches bauelement
WO2020262200A1 (ja) * 2019-06-26 2020-12-30 デンカ株式会社 蛍光体、蛍光体の製造方法、発光素子、発光装置および画像表示装置
DE112020005122T5 (de) * 2019-10-23 2022-07-21 Denka Company Limited Leuchtstoffplatte, lichtemittierende Vorrichtung und Verfahren zur Herstellung einer Leuchtstoffplatte
CN113200528B (zh) * 2021-05-31 2022-10-18 合肥中航纳米技术发展有限公司 一种高纯α相氮化硅粉末的制备方法及制备设备
KR102599819B1 (ko) 2022-01-20 2023-11-08 미쯔비시 케미컬 주식회사 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등
EP4293732A4 (de) 2022-01-20 2024-05-15 Mitsubishi Chemical Corporation Phosphor, lichtemittierende vorrichtung, beleuchtungsvorrichtung, bildanzeigevorrichtung und anzeigelampe für fahrzeuge

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3332872A1 (de) 1983-09-12 1985-04-04 Optische Werke G. Rodenstock, 8000 München Reflexionsvermindernder belag fuer ein optisches element aus organischem material
WO1991016722A1 (en) * 1990-04-17 1991-10-31 Loctite Luminescent Systems Inc. Electroluminescent phosphors with long life and method for making the same
US6051171A (en) * 1994-10-19 2000-04-18 Ngk Insulators, Ltd. Method for controlling firing shrinkage of ceramic green body
JPH11302020A (ja) * 1998-04-20 1999-11-02 Ube Ind Ltd リチウムマンガン系複合酸化物およびその製造法ならびにその用途
JP2002194346A (ja) * 2000-12-22 2002-07-10 Sumitomo Chem Co Ltd アルミン酸塩蛍光体の製造方法
JP3668770B2 (ja) 2001-06-07 2005-07-06 独立行政法人物質・材料研究機構 希土類元素を付活させた酸窒化物蛍光体
US6632379B2 (en) * 2001-06-07 2003-10-14 National Institute For Materials Science Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
JP4207489B2 (ja) 2002-08-06 2009-01-14 株式会社豊田中央研究所 α−サイアロン蛍光体
JP4072632B2 (ja) * 2002-11-29 2008-04-09 豊田合成株式会社 発光装置及び発光方法
JP4052136B2 (ja) * 2003-02-06 2008-02-27 宇部興産株式会社 サイアロン系酸窒化物蛍光体およびその製造方法
US7074346B2 (en) * 2003-02-06 2006-07-11 Ube Industries, Ltd. Sialon-based oxynitride phosphor, process for its production, and use thereof
JP4165318B2 (ja) 2003-07-16 2008-10-15 宇部興産株式会社 サイアロン系蛍光体およびその製造方法
JP4277666B2 (ja) 2003-12-01 2009-06-10 宇部興産株式会社 サイアロン系蛍光体の製造方法およびサイアロン系蛍光体
JP2005286312A (ja) * 2004-03-02 2005-10-13 Fujikura Ltd 発光デバイス及び照明装置
JP4210761B2 (ja) * 2004-03-12 2009-01-21 独立行政法人物質・材料研究機構 蛍光体とその製造方法
JP4581120B2 (ja) * 2004-04-26 2010-11-17 独立行政法人物質・材料研究機構 酸窒化物粉末およびその製造方法
KR100900282B1 (ko) * 2004-06-18 2009-05-29 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 α형 사이알론 및 α형 사이알론 형광체 및 그 제조 방법
JP4888624B2 (ja) 2004-07-30 2012-02-29 独立行政法人物質・材料研究機構 α型サイアロン粉末の製造方法
JP5105347B2 (ja) * 2004-09-22 2012-12-26 独立行政法人物質・材料研究機構 蛍光体とその製造方法および発光器具
JP2006185134A (ja) 2004-12-27 2006-07-13 Canon Inc ネットワークシステム及び画像配信方法
JP5188687B2 (ja) * 2006-07-18 2013-04-24 昭和電工株式会社 蛍光体及びその製造法並びに発光装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
JP5477360B2 (ja) 2014-04-23
US8628687B2 (en) 2014-01-14
EP2036966A1 (de) 2009-03-18
JP2012036408A (ja) 2012-02-23
US20090284948A1 (en) 2009-11-19
JPWO2008004640A1 (ja) 2009-12-03
KR20120123586A (ko) 2012-11-08
JP5151980B2 (ja) 2013-02-27
US20130001815A1 (en) 2013-01-03
TWI428429B (zh) 2014-03-01
EP2730635A1 (de) 2014-05-14
EP2730635B1 (de) 2017-05-10
KR20090026317A (ko) 2009-03-12
EP2036966A4 (de) 2011-05-04
WO2008004640A1 (fr) 2008-01-10
TW200811271A (en) 2008-03-01
KR101354896B1 (ko) 2014-01-24
KR101263062B1 (ko) 2013-05-09

Similar Documents

Publication Publication Date Title
EP2036966B1 (de) Auf sialon basierende oxynitridleuchtstoffe und herstellungsverfahren dafür
EP1997865B1 (de) Leuchtstoff, herstellungsverfahren dafür und leuchtvorrichtung
JP5549001B2 (ja) 蛍光体とその製造方法
KR101115855B1 (ko) 형광체와 그 제조 방법, 및 그것을 사용한 발광 소자
TWI399422B (zh) 螢光體、其製造方法及照明器具
EP2163595B1 (de) Fluoreszenzstoff, herstellungsverfahren dafür sowie davon gebrauch machende leuchtvorrichtung
EP1498466A1 (de) Leuchtstoff bezogen auf Sialon und Herstellungsverfahren
US20090085465A1 (en) Fluorophor and method for production thereof and illuminator
JP6684412B1 (ja) 蛍光体、その製造方法および発光装置
JPWO2019188319A1 (ja) 蛍光体及びそれを用いた発光装置
US8277686B2 (en) Sialon phosphor particles and production method thereof
JP3975451B2 (ja) 蛍光体を用いた照明器具および画像表示装置
EP3375839B1 (de) Verfahren zur herstellung von aluminatfluoreszenzmaterial, aluminatfluoreszenzmaterial und lichtemittierende vorrichtung
JP6735487B2 (ja) 蛍光体、その製造方法、発光装置、画像表示装置、顔料および紫外線吸収剤
JP6700630B2 (ja) 蛍光体、その製造方法、発光装置、画像表示装置、顔料および紫外線吸収剤
JP6700632B2 (ja) 蛍光体、その製造方法、発光装置、画像表示装置、顔料および紫外線吸収剤
JP7057567B2 (ja) 蛍光体及びそれを用いた発光装置
JP2018095783A (ja) 蛍光体及び発光装置
JP6700631B2 (ja) 蛍光体、その製造方法、発光装置、画像表示装置、顔料および紫外線吸収剤
JP6700633B2 (ja) 蛍光体、その製造方法、発光装置、画像表示装置、顔料および紫外線吸収剤

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20081219

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

RBV Designated contracting states (corrected)

Designated state(s): DE

TPAC Observations filed by third parties

Free format text: ORIGINAL CODE: EPIDOSNTIPA

A4 Supplementary search report drawn up and despatched

Effective date: 20110405

17Q First examination report despatched

Effective date: 20120215

DAX Request for extension of the european patent (deleted)
GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: C09K 11/77 20060101ALI20170418BHEP

Ipc: H01J 31/12 20060101ALI20170418BHEP

Ipc: C09K 11/08 20060101ALI20170418BHEP

Ipc: H01J 29/20 20060101ALI20170418BHEP

Ipc: H01L 33/00 20100101ALI20170418BHEP

Ipc: C09K 11/80 20060101ALI20170418BHEP

Ipc: C09K 11/64 20060101AFI20170418BHEP

Ipc: H01J 61/44 20060101ALI20170418BHEP

Ipc: C04B 35/626 20060101ALI20170418BHEP

Ipc: H01L 33/50 20100101ALI20170418BHEP

Ipc: C04B 35/597 20060101ALI20170418BHEP

INTG Intention to grant announced

Effective date: 20170518

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602007052809

Country of ref document: DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602007052809

Country of ref document: DE

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20180329

Year of fee payment: 12

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20180726

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602007052809

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200101