EP1892721A3 - Verfahren zur Programmierung einer nichtflüchtigen Multi-Bit-Speichervorrichtung und nichtflüchtige Multi-Bit-Speichervorrichtung - Google Patents

Verfahren zur Programmierung einer nichtflüchtigen Multi-Bit-Speichervorrichtung und nichtflüchtige Multi-Bit-Speichervorrichtung Download PDF

Info

Publication number
EP1892721A3
EP1892721A3 EP07016055A EP07016055A EP1892721A3 EP 1892721 A3 EP1892721 A3 EP 1892721A3 EP 07016055 A EP07016055 A EP 07016055A EP 07016055 A EP07016055 A EP 07016055A EP 1892721 A3 EP1892721 A3 EP 1892721A3
Authority
EP
European Patent Office
Prior art keywords
memory device
volatile memory
bit non
bit
programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07016055A
Other languages
English (en)
French (fr)
Other versions
EP1892721A2 (de
Inventor
Hyun-Sun Mo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to US11/843,219 priority Critical patent/US7684238B2/en
Publication of EP1892721A2 publication Critical patent/EP1892721A2/de
Publication of EP1892721A3 publication Critical patent/EP1892721A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Software Systems (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
EP07016055A 2006-08-24 2007-08-16 Verfahren zur Programmierung einer nichtflüchtigen Multi-Bit-Speichervorrichtung und nichtflüchtige Multi-Bit-Speichervorrichtung Withdrawn EP1892721A3 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/843,219 US7684238B2 (en) 2006-08-24 2007-08-22 Methods of programming multi-bit flash memory devices and related devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060080698A KR100919156B1 (ko) 2006-08-24 2006-08-24 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 방법

Publications (2)

Publication Number Publication Date
EP1892721A2 EP1892721A2 (de) 2008-02-27
EP1892721A3 true EP1892721A3 (de) 2008-07-30

Family

ID=38640086

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07016055A Withdrawn EP1892721A3 (de) 2006-08-24 2007-08-16 Verfahren zur Programmierung einer nichtflüchtigen Multi-Bit-Speichervorrichtung und nichtflüchtige Multi-Bit-Speichervorrichtung

Country Status (5)

Country Link
US (1) US7684238B2 (de)
EP (1) EP1892721A3 (de)
JP (1) JP5825749B2 (de)
KR (1) KR100919156B1 (de)
CN (1) CN101145396B (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009095902A2 (en) 2008-01-31 2009-08-06 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
KR101292574B1 (ko) * 2007-10-08 2013-08-16 삼성전자주식회사 멀티 비트 프로그래밍 장치 및 방법
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
US7679972B2 (en) * 2007-11-19 2010-03-16 Spansion Llc High reliable and low power static random access memory
US8453022B2 (en) 2007-12-05 2013-05-28 Densbits Technologies Ltd. Apparatus and methods for generating row-specific reading thresholds in flash memory
US8359516B2 (en) 2007-12-12 2013-01-22 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
US8972472B2 (en) 2008-03-25 2015-03-03 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
US7729166B2 (en) * 2008-07-02 2010-06-01 Mosaid Technologies Incorporated Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same
JP2010140521A (ja) * 2008-12-09 2010-06-24 Powerchip Semiconductor Corp 不揮発性半導体記憶装置とその読み出し方法
KR20100107294A (ko) 2009-03-25 2010-10-05 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 불휘발성 메모리 장치의 프로그램 방법
US8458574B2 (en) * 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US20100332922A1 (en) * 2009-06-30 2010-12-30 Mediatek Inc. Method for managing device and solid state disk drive utilizing the same
US8130543B2 (en) * 2009-08-13 2012-03-06 Macronix International Co., Ltd. Method and apparatus for increasing memory programming efficiency through dynamic switching of sense amplifiers
US9330767B1 (en) 2009-08-26 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory module and method for programming a page of flash memory cells
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
US8730729B2 (en) 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US9037777B2 (en) * 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
KR101829208B1 (ko) 2009-12-31 2018-02-20 에스케이하이닉스 주식회사 반도체 메모리 장치의 동작 방법
KR101626080B1 (ko) * 2010-02-17 2016-06-01 삼성전자주식회사 페이지 버퍼 관리 방법과 상기 방법을 수행할 수 있는 장치들
US9104610B2 (en) * 2010-04-06 2015-08-11 Densbits Technologies Ltd. Method, system and medium for analog encryption in a flash memory
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
US8510639B2 (en) 2010-07-01 2013-08-13 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
US8508992B2 (en) * 2010-07-09 2013-08-13 SK Hynix Inc. Semiconductor memory device and method of operating the same
JP2013534685A (ja) * 2010-07-21 2013-09-05 モサイド・テクノロジーズ・インコーポレーテッド フラッシュメモリのためのマルチページプログラム方式
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
US8850100B2 (en) 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US8990665B1 (en) 2011-04-06 2015-03-24 Densbits Technologies Ltd. System, method and computer program product for joint search of a read threshold and soft decoding
US9110785B1 (en) 2011-05-12 2015-08-18 Densbits Technologies Ltd. Ordered merge of data sectors that belong to memory space portions
US9396106B2 (en) 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US9372792B1 (en) 2011-05-12 2016-06-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US9501392B1 (en) 2011-05-12 2016-11-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of a non-volatile memory module
US8996790B1 (en) 2011-05-12 2015-03-31 Densbits Technologies Ltd. System and method for flash memory management
US9195592B1 (en) 2011-05-12 2015-11-24 Densbits Technologies Ltd. Advanced management of a non-volatile memory
JP2013041634A (ja) * 2011-08-11 2013-02-28 Fujitsu Ltd 不揮発性半導体記憶装置
US8947941B2 (en) 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US8996788B2 (en) 2012-02-09 2015-03-31 Densbits Technologies Ltd. Configurable flash interface
US8996793B1 (en) 2012-04-24 2015-03-31 Densbits Technologies Ltd. System, method and computer readable medium for generating soft information
US8838937B1 (en) 2012-05-23 2014-09-16 Densbits Technologies Ltd. Methods, systems and computer readable medium for writing and reading data
US8879325B1 (en) 2012-05-30 2014-11-04 Densbits Technologies Ltd. System, method and computer program product for processing read threshold information and for reading a flash memory module
US9921954B1 (en) 2012-08-27 2018-03-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and system for split flash memory management between host and storage controller
KR102040904B1 (ko) 2012-11-05 2019-11-05 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
US9368225B1 (en) 2012-11-21 2016-06-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Determining read thresholds based upon read error direction statistics
US9069659B1 (en) 2013-01-03 2015-06-30 Densbits Technologies Ltd. Read threshold determination using reference read threshold
US8885405B2 (en) * 2013-01-31 2014-11-11 Ememory Technology Inc. Flash memory and associated programming method
US9136876B1 (en) 2013-06-13 2015-09-15 Densbits Technologies Ltd. Size limited multi-dimensional decoding
US9413491B1 (en) 2013-10-08 2016-08-09 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for multiple dimension decoding and encoding a message
US9786388B1 (en) 2013-10-09 2017-10-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9348694B1 (en) 2013-10-09 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9397706B1 (en) 2013-10-09 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for irregular multiple dimension decoding and encoding
US9536612B1 (en) 2014-01-23 2017-01-03 Avago Technologies General Ip (Singapore) Pte. Ltd Digital signaling processing for three dimensional flash memory arrays
US10120792B1 (en) 2014-01-29 2018-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Programming an embedded flash storage device
US9542262B1 (en) 2014-05-29 2017-01-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Error correction
US9892033B1 (en) 2014-06-24 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of memory units
US9584159B1 (en) 2014-07-03 2017-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Interleaved encoding
US9972393B1 (en) 2014-07-03 2018-05-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Accelerating programming of a flash memory module
US9449702B1 (en) 2014-07-08 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Power management
KR20160044923A (ko) * 2014-10-16 2016-04-26 에스케이하이닉스 주식회사 복수의 메모리 셀들을 포함하는 반도체 메모리 장치 및 그것의 동작 방법
US9524211B1 (en) 2014-11-18 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Codeword management
KR102239868B1 (ko) * 2014-11-28 2021-04-13 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
KR102271462B1 (ko) 2015-01-13 2021-07-05 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 및 그것의 프로그램 방법
US10305515B1 (en) 2015-02-02 2019-05-28 Avago Technologies International Sales Pte. Limited System and method for encoding using multiple linear feedback shift registers
JP2016173868A (ja) * 2015-03-17 2016-09-29 株式会社東芝 不揮発性半導体記憶装置
TWI550612B (zh) * 2015-03-23 2016-09-21 群聯電子股份有限公司 資料程式化方法、記憶體儲存裝置及記憶體控制電路單元
US10628255B1 (en) 2015-06-11 2020-04-21 Avago Technologies International Sales Pte. Limited Multi-dimensional decoding
US9851921B1 (en) 2015-07-05 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory chip processing
US10466908B2 (en) * 2015-08-25 2019-11-05 Toshiba Memory Corporation Memory system that buffers data before writing to nonvolatile memory
KR102329800B1 (ko) * 2015-10-22 2021-11-22 삼성전자주식회사 메모리 장치 및 메모리 장치의 에지 워드라인 관리 방법
US9954558B1 (en) 2016-03-03 2018-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Fast decoding of data stored in a flash memory
JP2018005959A (ja) * 2016-06-30 2018-01-11 東芝メモリ株式会社 メモリシステムおよび書き込み方法
US20180039427A1 (en) * 2016-08-08 2018-02-08 Nuvoton Technology Corporation Reducing programming time of memory devices using data encoding
KR20200048318A (ko) 2018-10-29 2020-05-08 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
JP2020102286A (ja) * 2018-12-21 2020-07-02 キオクシア株式会社 半導体記憶装置
CN109859683B (zh) * 2019-04-12 2023-08-04 深圳市德普微电子有限公司 一种led显示屏单双锁存自动切换芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278636B1 (en) * 1999-03-08 2001-08-21 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device having improved page buffers
EP1280161A1 (de) * 2001-07-23 2003-01-29 Samsung Electronics Co., Ltd. Speicheranordnung mit einem zwei Register enthaltenden Seitenpufferspeicher sowie entsprechendes Benutzungsverfahren
EP1326257A2 (de) * 2001-12-21 2003-07-09 Fujitsu Limited Pipeline-programmierung für einen NAND-typ Flash-Speicher
US7023737B1 (en) * 2005-08-01 2006-04-04 Sandisk Corporation System for programming non-volatile memory with self-adjusting maximum program loop
US20060181924A1 (en) * 2005-02-17 2006-08-17 Hynix Semiconductor Inc. Non-volatile memory device and method for operation page buffer thereof

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960000616B1 (ko) 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
JP3153730B2 (ja) * 1995-05-16 2001-04-09 株式会社東芝 不揮発性半導体記憶装置
KR0172408B1 (ko) 1995-12-11 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 및 그의 구동방법
US5724284A (en) 1996-06-24 1998-03-03 Advanced Micro Devices, Inc. Multiple bits-per-cell flash shift register page buffer
US6335878B1 (en) 1998-07-28 2002-01-01 Hitachi, Ltd. Non-volatile multi-level semiconductor flash memory device and method of driving same
WO1998001861A1 (fr) 1996-07-10 1998-01-15 Hitachi, Ltd. Memoire remanente a semi-conducteurs
JPH1092186A (ja) * 1996-09-12 1998-04-10 Hitachi Ltd 半導体記憶装置
KR100205240B1 (ko) 1996-09-13 1999-07-01 윤종용 단일 비트 및 다중 비트 셀들이 장착된 불휘발성 반도체 메모리 장치
KR100206709B1 (ko) 1996-09-21 1999-07-01 윤종용 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법
US5862074A (en) 1996-10-04 1999-01-19 Samsung Electronics Co., Ltd. Integrated circuit memory devices having reconfigurable nonvolatile multi-bit memory cells therein and methods of operating same
KR100259972B1 (ko) 1997-01-21 2000-06-15 윤종용 메모리 셀당 2개 이상의 저장 상태들을 갖는 불휘발성 반도체 메모리 장치
JP3156636B2 (ja) * 1997-05-30 2001-04-16 日本電気株式会社 不揮発性半導体記憶装置
JPH11144479A (ja) 1997-11-10 1999-05-28 New Koa Technology Kk 不揮発性半導体多値メモリ装置
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
KR100266744B1 (ko) 1997-12-29 2000-09-15 윤종용 고집적 가능한 멀티-비트 데이터 래치 회로를 갖는 반도체 메모리 장치
KR100266745B1 (ko) 1997-12-29 2000-09-15 윤종용 멀티-비트 데이터를 저장하기 위한 반도체 메모리 장치
KR100295135B1 (ko) 1997-12-31 2001-07-12 윤종용 멀티-비트 셀 구조를 갖는 비휘발성 메모리 장치
US5930172A (en) 1998-06-23 1999-07-27 Advanced Micro Devices, Inc. Page buffer for a multi-level flash memory with a limited number of latches per memory cell
JP2000215679A (ja) * 1999-01-18 2000-08-04 Taito Corp 半導体記憶装置
JP2001093288A (ja) 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
KR20010068554A (ko) 2000-01-06 2001-07-23 김헌배 차량 엔진의 고장상태를 진단하는 장치
US6266273B1 (en) 2000-08-21 2001-07-24 Sandisk Corporation Method and structure for reliable data copy operation for non-volatile memories
KR100386296B1 (ko) * 2000-12-30 2003-06-02 주식회사 하이닉스반도체 멀티레벨을 가지는 플래쉬 메모리를 프로그램/리드하기위한 회로 및 그 방법
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
KR100390959B1 (ko) * 2001-06-29 2003-07-12 주식회사 하이닉스반도체 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법
JP2003030993A (ja) 2001-07-17 2003-01-31 Toshiba Corp 半導体記憶装置
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
JP4122750B2 (ja) * 2001-10-24 2008-07-23 沖電気工業株式会社 半導体記憶装置および半導体記憶装置のデータ書き込み方法
KR100855504B1 (ko) 2001-12-08 2008-09-01 엘지디스플레이 주식회사 액정표시소자의 제조방법
KR100437461B1 (ko) 2002-01-12 2004-06-23 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 소거, 프로그램,그리고 카피백 프로그램 방법
KR100466980B1 (ko) 2002-01-15 2005-01-24 삼성전자주식회사 낸드 플래시 메모리 장치
JP4082913B2 (ja) 2002-02-07 2008-04-30 株式会社ルネサステクノロジ メモリシステム
US6549457B1 (en) * 2002-02-15 2003-04-15 Intel Corporation Using multiple status bits per cell for handling power failures during write operations
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
JP4294977B2 (ja) * 2003-02-28 2009-07-15 株式会社ルネサステクノロジ 不揮発性記憶装置
JP4563715B2 (ja) 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
JP4041057B2 (ja) * 2003-11-13 2008-01-30 株式会社東芝 不揮発性半導体記憶装置
KR100541819B1 (ko) 2003-12-30 2006-01-10 삼성전자주식회사 스타트 프로그램 전압을 차등적으로 사용하는 불휘발성반도체 메모리 장치 및 그에 따른 프로그램 방법
KR100528482B1 (ko) 2003-12-31 2005-11-15 삼성전자주식회사 데이타를 섹터 단위로 랜덤하게 입출력할 수 있는 플래시메모리 시스템
KR100525004B1 (ko) * 2004-02-26 2005-10-31 삼성전자주식회사 멀티레벨 셀（Ｍｕｌｔｉ－ｌｅｖｅｌ ｃｅｌｌ）플래쉬메모리장치 및 이의 프로그램 방법
JP2005353171A (ja) 2004-06-10 2005-12-22 Toshiba Corp 半導体記憶装置及びそのブランクページ検索方法
KR100568116B1 (ko) 2004-09-13 2006-04-05 삼성전자주식회사 전압 조절 수단을 구비한 플래시 메모리 장치
JP4410188B2 (ja) * 2004-11-12 2010-02-03 株式会社東芝 半導体記憶装置のデータ書き込み方法
US7298648B2 (en) * 2004-11-19 2007-11-20 Samsung Electronics Co., Ltd. Page buffer and multi-state nonvolatile memory device including the same
JP4768256B2 (ja) * 2004-12-16 2011-09-07 株式会社東芝 半導体記憶装置
KR100597788B1 (ko) * 2004-12-17 2006-07-06 삼성전자주식회사 프로그램 동작 속도를 개선하는 불휘발성 반도체 메모리장치의 페이지 버퍼와 이에 대한 구동방법
US7187583B2 (en) 2005-01-25 2007-03-06 Phison Electronics Corp. Method for reducing data error when flash memory storage device using copy back command
KR100597063B1 (ko) 2005-04-08 2006-07-06 후지쯔 가부시끼가이샤 플래시 메모리 및 메모리 제어 방법
JP4874566B2 (ja) * 2005-04-11 2012-02-15 株式会社東芝 半導体記憶装置
KR100721012B1 (ko) * 2005-07-12 2007-05-22 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
KR101247247B1 (ko) 2005-11-30 2013-03-25 삼성전자주식회사 클락 신호의 출력을 제어할 수 있는 컨트롤러 및 상기 컨트롤러를 구비하는 시스템

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278636B1 (en) * 1999-03-08 2001-08-21 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device having improved page buffers
EP1280161A1 (de) * 2001-07-23 2003-01-29 Samsung Electronics Co., Ltd. Speicheranordnung mit einem zwei Register enthaltenden Seitenpufferspeicher sowie entsprechendes Benutzungsverfahren
EP1326257A2 (de) * 2001-12-21 2003-07-09 Fujitsu Limited Pipeline-programmierung für einen NAND-typ Flash-Speicher
US20060181924A1 (en) * 2005-02-17 2006-08-17 Hynix Semiconductor Inc. Non-volatile memory device and method for operation page buffer thereof
US7023737B1 (en) * 2005-08-01 2006-04-04 Sandisk Corporation System for programming non-volatile memory with self-adjusting maximum program loop

Also Published As

Publication number Publication date
US7684238B2 (en) 2010-03-23
KR20080018495A (ko) 2008-02-28
CN101145396B (zh) 2013-09-18
JP5825749B2 (ja) 2015-12-02
CN101145396A (zh) 2008-03-19
JP2008052899A (ja) 2008-03-06
EP1892721A2 (de) 2008-02-27
KR100919156B1 (ko) 2009-09-28
US20080049497A1 (en) 2008-02-28

Similar Documents

Publication Publication Date Title
EP1892721A3 (de) Verfahren zur Programmierung einer nichtflüchtigen Multi-Bit-Speichervorrichtung und nichtflüchtige Multi-Bit-Speichervorrichtung
EP1679721A3 (de) Verfahren zum Betrieb einer NROM Speichervorrichtung
WO2007130615A3 (en) A method for reading a multilevel cell in a non-volatile memory device
WO2007146010A3 (en) Programming a non-volatile memory device
AU2003301939A1 (en) Nonvolatile memory array using unified cell structure in divided-well allowing write operation with no disturb
EP1916665A3 (de) Kombinierte Lese- und Schreibschaltung für einen Speicher
AU2003262675A1 (en) Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
EP2787507A3 (de) Resistive Speicherzellen und ihre Programmierverfahren, Leseverfahren und Betriebsverfahren
EP1755128A3 (de) Verfahren zum Lesen nichtflüchtiger Speicherzellen
TW200707189A (en) Memory block erasing in a flash memory device
WO2009139567A3 (en) Memory device and memory programming method
WO2006072945A3 (en) Method of managing a multi-bit cell flash memory with improved reliability and performance
TW200634823A (en) System and method for use of on-chip non-volatile memory write cache
EP1306855A3 (de) Verfahren zum Löschen einer Speicherzelle
TW200625320A (en) Nonvolatile memory devices and programming methods using subsets of columns
WO2007126830A9 (en) Memory array having a programmable word length, and method of operating same
WO2009072104A3 (en) Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith
WO2004044917A3 (en) A combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
TW200715293A (en) Memory device and method for operating the same
TW200638425A (en) Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
AU2003263748A1 (en) Nrom memory cell, memory array, related devices and methods
EP1603137A3 (de) Program- und Löschverfahren für P-kanal ladungsabfangende Speicheranordnung
WO2009038780A3 (en) Nand-structured series variable-resistance material memories, processes of forming same, and methods of using same
EP1796102A3 (de) Halbleiterspeicheranordnung
TW200701237A (en) Reference scheme for a non-volatile semiconductor memory device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK YU

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

17P Request for examination filed

Effective date: 20090126

17Q First examination report despatched

Effective date: 20090303

AKX Designation fees paid

Designated state(s): DE

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20110301