EP1833096A4 - Batterie solaire à film mince à base cis et procédé de fabrication de ladite batterie - Google Patents
Batterie solaire à film mince à base cis et procédé de fabrication de ladite batterieInfo
- Publication number
- EP1833096A4 EP1833096A4 EP05814238.1A EP05814238A EP1833096A4 EP 1833096 A4 EP1833096 A4 EP 1833096A4 EP 05814238 A EP05814238 A EP 05814238A EP 1833096 A4 EP1833096 A4 EP 1833096A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- cis
- producing
- thin film
- same
- solar battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004356909A JP2006165386A (ja) | 2004-12-09 | 2004-12-09 | Cis系薄膜太陽電池及びその作製方法 |
PCT/JP2005/022698 WO2006062206A1 (fr) | 2004-12-09 | 2005-12-09 | Batterie solaire à film mince à base cis et procédé de fabrication de ladite batterie |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1833096A1 EP1833096A1 (fr) | 2007-09-12 |
EP1833096A4 true EP1833096A4 (fr) | 2014-10-01 |
Family
ID=36578026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05814238.1A Withdrawn EP1833096A4 (fr) | 2004-12-09 | 2005-12-09 | Batterie solaire à film mince à base cis et procédé de fabrication de ladite batterie |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080271781A1 (fr) |
EP (1) | EP1833096A4 (fr) |
JP (1) | JP2006165386A (fr) |
KR (1) | KR20070100249A (fr) |
CN (1) | CN101076895B (fr) |
WO (1) | WO2006062206A1 (fr) |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100838167B1 (ko) | 2006-07-18 | 2008-06-13 | 주식회사 엘지화학 | Ci(g)s 태양전지 후면전극의 제조방법 |
JP2008047614A (ja) * | 2006-08-11 | 2008-02-28 | Showa Shell Sekiyu Kk | 吸着材を利用した改良型太陽電池モジュール |
WO2008120307A1 (fr) * | 2007-03-28 | 2008-10-09 | Showa Shell Sekiyu K.K. | Système de fabrication d'un sous-module de cellule solaire en couches minces à base de cis |
US7914762B2 (en) | 2007-09-28 | 2011-03-29 | Korea Research Institute Of Chemical Technology | Preparation method of chalcopyrite-type compounds with microwave irradiation |
JP2009267337A (ja) | 2007-09-28 | 2009-11-12 | Fujifilm Corp | 太陽電池 |
JP4974986B2 (ja) | 2007-09-28 | 2012-07-11 | 富士フイルム株式会社 | 太陽電池用基板および太陽電池 |
WO2009041660A1 (fr) | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | Substrat pour cellule solaire et cellule solaire |
FR2922046B1 (fr) * | 2007-10-05 | 2011-06-24 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere |
KR101047941B1 (ko) * | 2007-10-31 | 2011-07-11 | 주식회사 엘지화학 | Ci(g)s 태양전지 후면 전극의 제조방법 |
FR2924863B1 (fr) * | 2007-12-07 | 2017-06-16 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere. |
US20090260678A1 (en) * | 2008-04-16 | 2009-10-22 | Agc Flat Glass Europe S.A. | Glass substrate bearing an electrode |
JP4384237B2 (ja) * | 2008-05-19 | 2009-12-16 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の製造方法 |
KR20110025207A (ko) * | 2008-06-30 | 2011-03-09 | 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 | 나트륨을 함유하는 유리 기체를 갖는 전자 장치 및 그 제조 방법 |
TWI382556B (en) * | 2008-10-17 | 2013-01-11 | A method for manufacturing electrodes of a solar cell and a shelter structure for use in the manufacture of electrodes of the solar cell | |
JP2010212336A (ja) * | 2009-03-09 | 2010-09-24 | Fujifilm Corp | 光電変換素子とその製造方法、及び太陽電池 |
US20100236616A1 (en) * | 2009-03-19 | 2010-09-23 | Jenn Feng Industrial Co., Ltd. | Cigs solar cell having thermal expansion buffer layer and method for fabricating the same |
US20100242953A1 (en) * | 2009-03-27 | 2010-09-30 | Ppg Industries Ohio, Inc. | Solar reflecting mirror having a protective coating and method of making same |
KR101014106B1 (ko) | 2009-03-31 | 2011-02-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US7897020B2 (en) * | 2009-04-13 | 2011-03-01 | Miasole | Method for alkali doping of thin film photovoltaic materials |
US7785921B1 (en) * | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
US8134069B2 (en) | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
JP2010258368A (ja) * | 2009-04-28 | 2010-11-11 | Tohoku Univ | 電子装置及びその製造方法 |
KR101039993B1 (ko) | 2009-06-19 | 2011-06-09 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101081194B1 (ko) * | 2009-06-16 | 2011-11-07 | 엘지이노텍 주식회사 | 태양전지의 제조장치, 이를 이용한 태양전지의 제조방법 |
JP2011009287A (ja) | 2009-06-23 | 2011-01-13 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池 |
KR101081079B1 (ko) | 2009-06-25 | 2011-11-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP5114683B2 (ja) * | 2009-09-07 | 2013-01-09 | 新日鐵住金株式会社 | 太陽電池用ガラス基板の裏面電極及びその製造方法 |
US7923628B2 (en) * | 2009-09-09 | 2011-04-12 | International Business Machines Corporation | Method of controlling the composition of a photovoltaic thin film |
JP5381562B2 (ja) * | 2009-09-29 | 2014-01-08 | 大日本印刷株式会社 | 薄膜太陽電池及びその製造方法 |
KR101072089B1 (ko) * | 2009-09-30 | 2011-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US8709335B1 (en) | 2009-10-20 | 2014-04-29 | Hanergy Holding Group Ltd. | Method of making a CIG target by cold spraying |
US8709548B1 (en) | 2009-10-20 | 2014-04-29 | Hanergy Holding Group Ltd. | Method of making a CIG target by spray forming |
JP2011129631A (ja) | 2009-12-16 | 2011-06-30 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池の製造方法 |
TWI520367B (zh) * | 2010-02-09 | 2016-02-01 | 陶氏全球科技公司 | 具透明導電阻擋層之光伏打裝置 |
JP2012077321A (ja) * | 2010-09-30 | 2012-04-19 | Sumitomo Heavy Ind Ltd | 成膜基板の製造方法、成膜基板、および成膜装置 |
US7935558B1 (en) | 2010-10-19 | 2011-05-03 | Miasole | Sodium salt containing CIG targets, methods of making and methods of use thereof |
US9169548B1 (en) | 2010-10-19 | 2015-10-27 | Apollo Precision Fujian Limited | Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof |
US8048707B1 (en) | 2010-10-19 | 2011-11-01 | Miasole | Sulfur salt containing CIG targets, methods of making and methods of use thereof |
KR20120054365A (ko) * | 2010-11-19 | 2012-05-30 | 한국전자통신연구원 | 화합물 반도체 태양전지 및 그 제조방법 |
CN102610690A (zh) * | 2011-01-19 | 2012-07-25 | 河南师范大学 | 一种铜铟镓硒薄膜太阳能电池缓冲层材料制备方法 |
KR101219948B1 (ko) | 2011-01-27 | 2013-01-21 | 엘지이노텍 주식회사 | 태양광 발전장치 및 제조방법 |
KR101283183B1 (ko) * | 2011-04-04 | 2013-07-05 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP5620334B2 (ja) * | 2011-05-18 | 2014-11-05 | 株式会社神戸製鋼所 | Cigs系太陽電池 |
WO2012169845A2 (fr) * | 2011-06-10 | 2012-12-13 | 주식회사 포스코 | Substrat de cellule solaire, son procédé de fabrication et cellule solaire utilisant celui-ci |
KR101228735B1 (ko) | 2011-06-10 | 2013-02-01 | 주식회사 포스코 | 다층 확산방지막을 포함하는 태양전지 기판 및 이를 이용한 태양전지 |
KR101228685B1 (ko) * | 2011-06-13 | 2013-01-31 | 주식회사 포스코 | Ci(g)s태양전지용 기판 및 이를 이용한 ci(g)s태양전지 |
EP2720279A4 (fr) * | 2011-06-13 | 2014-12-24 | Posco | Substrat de cellule solaire et cellule solaire l'utilisant |
KR101228666B1 (ko) * | 2011-06-13 | 2013-01-31 | 주식회사 포스코 | 다층 하부전극을 포함한 ci(g)s 태양전지용 기판 및 이를 이용한 ci(g)s 태양전지 |
FR2977078B1 (fr) * | 2011-06-27 | 2013-06-28 | Saint Gobain | Substrat conducteur pour cellule photovoltaique |
JP5665712B2 (ja) * | 2011-09-28 | 2015-02-04 | 京セラ株式会社 | 光電変換装置 |
JP2013074123A (ja) * | 2011-09-28 | 2013-04-22 | Fujifilm Corp | 光電変換素子用基板および光電変換素子 |
KR101196350B1 (ko) | 2011-10-19 | 2012-11-01 | 주식회사 아바코 | 박막형 태양전지와 그 제조 방법 및 이를 제조하기 위한 스퍼터링장치 |
KR101306529B1 (ko) * | 2011-11-21 | 2013-09-09 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101338782B1 (ko) * | 2011-11-29 | 2014-01-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP5258951B2 (ja) | 2011-12-02 | 2013-08-07 | 昭和シェル石油株式会社 | 薄膜太陽電池 |
KR101867617B1 (ko) * | 2011-12-20 | 2018-06-15 | 주식회사 포스코 | 다층 확산방지막을 포함하는 태양전지 |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
JP5575163B2 (ja) * | 2012-02-22 | 2014-08-20 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の製造方法 |
DE102012205375A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwen-dung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module |
DE102012205377A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwendung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module |
KR101382819B1 (ko) * | 2012-04-17 | 2014-04-09 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
US20140041721A1 (en) * | 2012-08-09 | 2014-02-13 | Samsung Sdi Co., Ltd. | Solar cell and manufacturing method thereof |
JP5660091B2 (ja) | 2012-08-30 | 2015-01-28 | 株式会社豊田中央研究所 | 光電素子用電極 |
KR101865953B1 (ko) * | 2012-09-12 | 2018-06-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP2014063795A (ja) | 2012-09-20 | 2014-04-10 | Seiko Epson Corp | 光電変換素子、光電変換素子の製造方法、及び電子機器 |
EP2917941A2 (fr) * | 2012-11-09 | 2015-09-16 | Nanoco Technologies Ltd | Substrats en molybdène pour dispositifs photovoltaïques en cigs |
US8748217B2 (en) * | 2012-11-13 | 2014-06-10 | Tsmc Solar Ltd. | Metal-based solution treatment of CIGS absorber layer in thin-film solar cells |
KR101474488B1 (ko) | 2013-05-15 | 2014-12-19 | 엘에스엠트론 주식회사 | 화합물 박막 태양전지용 후면 기판 및 이를 포함하는 화합물 박막 태양전지 |
KR20150050186A (ko) * | 2013-10-31 | 2015-05-08 | 삼성에스디아이 주식회사 | 태양 전지 및 그 제조 방법 |
CN104617183B (zh) * | 2014-09-05 | 2016-09-28 | 厦门神科太阳能有限公司 | 一种cigs基薄膜太阳电池及其制备方法 |
EP3109905A1 (fr) * | 2015-06-26 | 2016-12-28 | International Iberian Nanotechnology Laboratory | Module de cellule solaire |
JP6673360B2 (ja) * | 2015-09-18 | 2020-03-25 | Agc株式会社 | 太陽電池用ガラス基板及び太陽電池 |
CN108511537B (zh) * | 2018-06-26 | 2022-11-29 | 上海祖强能源有限公司 | 一种太阳能电池 |
CN112071946A (zh) * | 2019-05-21 | 2020-12-11 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池的制备方法 |
KR20220055526A (ko) * | 2020-10-26 | 2022-05-04 | 삼성디스플레이 주식회사 | 반도체 구조물을 포함하는 적층 구조물 및 이의 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5626688A (en) * | 1994-12-01 | 1997-05-06 | Siemens Aktiengesellschaft | Solar cell with chalcopyrite absorber layer |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
JP2004047917A (ja) * | 2002-07-12 | 2004-02-12 | Honda Motor Co Ltd | 薄膜太陽電池およびその製造方法 |
US20040144419A1 (en) * | 2001-01-31 | 2004-07-29 | Renaud Fix | Transparent substrate equipped with an electrode |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047101A (en) * | 1976-01-08 | 1977-09-06 | Westinghouse Electric Corporation | Filament for alkali metal ionization detector |
JPS6220381A (ja) * | 1985-07-16 | 1987-01-28 | シーメンス ソーラー インダストリーズ,エル.ピー. | 二セレン化インジウム銅半導体膜の製造方法 |
US5089442A (en) * | 1990-09-20 | 1992-02-18 | At&T Bell Laboratories | Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd |
JPH05114749A (ja) * | 1991-10-23 | 1993-05-07 | Nikko Kyodo Co Ltd | 電子素子部材およびその製造方法 |
JPH09186350A (ja) * | 1996-01-05 | 1997-07-15 | Canon Inc | 光起電力素子及びその製造方法 |
JP3777281B2 (ja) * | 1999-03-29 | 2006-05-24 | 新光電気工業株式会社 | 化合物半導体太陽電池及びその製造方法 |
JP2004103663A (ja) * | 2002-09-05 | 2004-04-02 | Matsushita Electric Ind Co Ltd | 太陽電池 |
JP4055064B2 (ja) * | 2002-10-16 | 2008-03-05 | 本田技研工業株式会社 | 薄膜太陽電池の製造方法 |
-
2004
- 2004-12-09 JP JP2004356909A patent/JP2006165386A/ja active Pending
-
2005
- 2005-12-09 US US11/721,381 patent/US20080271781A1/en not_active Abandoned
- 2005-12-09 WO PCT/JP2005/022698 patent/WO2006062206A1/fr active Application Filing
- 2005-12-09 CN CN2005800425138A patent/CN101076895B/zh not_active Expired - Fee Related
- 2005-12-09 KR KR1020077012933A patent/KR20070100249A/ko active Search and Examination
- 2005-12-09 EP EP05814238.1A patent/EP1833096A4/fr not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5626688A (en) * | 1994-12-01 | 1997-05-06 | Siemens Aktiengesellschaft | Solar cell with chalcopyrite absorber layer |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
US20040144419A1 (en) * | 2001-01-31 | 2004-07-29 | Renaud Fix | Transparent substrate equipped with an electrode |
JP2004047917A (ja) * | 2002-07-12 | 2004-02-12 | Honda Motor Co Ltd | 薄膜太陽電池およびその製造方法 |
Non-Patent Citations (3)
Title |
---|
CONTRERAS M A ET AL: "HIGH EFFICIENCY CU(IN,GA)SE2-BASED SOLAR CELLS: PROCESSING OF NOVELABSORBER STRUCTURES", WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY. WAIKOLOA, DEC. 5 - 9, 1994; [WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY], NEW YORK, IEEE, US, vol. CONF. 1, 5 December 1994 (1994-12-05), pages 68 - 75, XP000681256 * |
SCOFIELD J H ET AL: "SODIUM DIFFUSION, SELENIZATION, AND MICROSTRUCTURAL EFFECTS ASSOCIATED WITH VARIOUS MOLYBDENUM BACK CONTACT LAYERS FOR CIS- BASED SOLAR CELLS", WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY. WAIKOLOA, DEC. 5 - 9, 1994; [WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY], NEW YORK, IEEE, US, vol. CONF. 1, 5 December 1994 (1994-12-05), pages 164 - 167, XP000681272 * |
See also references of WO2006062206A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN101076895B (zh) | 2011-12-21 |
US20080271781A1 (en) | 2008-11-06 |
JP2006165386A (ja) | 2006-06-22 |
EP1833096A1 (fr) | 2007-09-12 |
WO2006062206A1 (fr) | 2006-06-15 |
CN101076895A (zh) | 2007-11-21 |
KR20070100249A (ko) | 2007-10-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1833096A4 (fr) | Batterie solaire à film mince à base cis et procédé de fabrication de ladite batterie | |
EP1939946A4 (fr) | Module de batterie solaire en couches minces de type cis et son procédé de production | |
EP1835548A4 (fr) | Pile solaire a jonction de renfort et procede de fabrication idoine | |
EP1816683A4 (fr) | Cellule solaire et son procede de production | |
EP1732139A4 (fr) | Substrat pour cellule solaire a film mince, procede de fabrication dudit substrat, et cellule solaire a film mince employant ledit substrat | |
EP1947704A4 (fr) | Module pour pile solaire à couche mince de type cis et son procédé de production | |
EP1855325A4 (fr) | Cellule solaire et procede de fabrication idoine | |
EP1804299B8 (fr) | Cellule solaire et son procédé de fabrication | |
EP2249395A4 (fr) | Pile solaire en couche mince et procede de fabrication associe | |
EP2169724A4 (fr) | Cellule solaire à couche mince intégrée et son procédé de fabrication | |
EP1833097A4 (fr) | Procede d'elaboration d'une couche d'absorption de lumiere dans une batterie solairea film mince a base cis | |
AU2003220984A1 (en) | Compound thin-film solar cell and process for producing the same | |
EP2080231A4 (fr) | Cellule solaire a film mince et son procede de fabrication | |
EP1714308A4 (fr) | Photopiles a contact arriere et procedes de fabrication associes | |
TWI369788B (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
EP2095429A4 (fr) | Cellule solaire et procédé de fabrication de celle-ci | |
EP1772429A4 (fr) | Méthode pour produire du silicium polycristallin et silicium polycristallin pour une cellule solaire produite par la méthode | |
EP2302692A4 (fr) | Module de batterie solaire et son procédé de fabrication | |
EP1950813A4 (fr) | Substrat conducteur transparent pour pile solaire et son procede de fabrication | |
EP1887632A4 (fr) | Cellule de pile solaire et son procédé de fabrication | |
EP1619728A4 (fr) | Cellule solaire | |
EP2302690A4 (fr) | Cellule de batterie solaire et son procédé de fabrication | |
EP2012364A4 (fr) | Bande adhesive et module de cellule solaire l'employant | |
HK1094915A1 (en) | Multilayer solar cell | |
EP1956659A4 (fr) | Batterie solaire et module de batterie solaire |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20070608 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20140903 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 31/0392 20060101ALI20140828BHEP Ipc: H01L 31/0224 20060101ALI20140828BHEP Ipc: H01L 31/0749 20120101AFI20140828BHEP Ipc: H01L 31/18 20060101ALI20140828BHEP |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SOLAR FRONTIER K.K. |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20170901 |