JP2011009287A - Cis系薄膜太陽電池 - Google Patents
Cis系薄膜太陽電池 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 239000011521 glass Substances 0.000 claims abstract description 48
- 239000010408 film Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 239000003513 alkali Substances 0.000 claims description 66
- 230000031700 light absorption Effects 0.000 claims description 30
- 229910052738 indium Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- -1 composed of Cu Chemical class 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 38
- 239000010949 copper Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000011669 selenium Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000005357 flat glass Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】本発明のCIS系薄膜太陽電池は、高歪点ガラス基板(1)、アルカリ制御層(2)、裏面電極層(3)、p型CIS系光吸収層(4)、n型透明導電膜(6)の順に積層されたCIS系薄膜太陽電池において、前記アルカリ制御層(2)を、膜厚が2.00〜10.00nm、屈折率が1.450〜1.500の範囲のシリカ膜で形成する。
【選択図】図2
Description
RFスパッタ:SiO2ターゲット
投入電力:0.1〜3W/cm2
O2濃度(O2/O2+Ar):0〜20%
成膜圧力:0.3〜2.0Pa
p型光吸収層4は、金属裏面電極3上に、Cu、In、Gaを含む積層構造又は混晶の金属プリカーサ膜を、スパッタ法や蒸着法などにより成膜した後、これをセレン化および硫化することによって形成する。実施例では、InおよびGaのIII族元素の原子数に対するCuの原子数の比率(Cu/III族比)を0.85〜0.95とし、III族元素の原子数に占めるGaの原子数の比率(Ga/III族比)を0.15〜0.4とし、セレン化を350℃〜500℃、硫化を550℃〜650℃の条件で実行することにより、p型の導電型を有する膜厚1〜3μmの光吸収層を成膜した。
2イオウ化銅インジウム (CuInS2)
2セレン・イオウ化銅インジウム (CuIn(SeS)2)
2セレン化銅ガリウム (CuGaSe2)
2イオウ化銅ガリウム (CuGaS2)
2セレン化銅インジウム・ガリウム (Cu(InGa)Se2)
2イオウ化銅インジウム・ガリウム (Cu(InGa)S2)
等であってよい。
図2の実施形態では、バッファ層5として、n型の導電型を有し透明で高抵抗な、膜厚2〜50nmのZn(O、S、OH)xを成膜した。このバッファ層5は、溶液成長法、MOCVD法によって成膜することが可能である。なお、本実施形態では、バッファ層5としてZn(O、S、OH)xからなる半導体膜を成膜したが、本発明はこの実施形態に限定されることはない。例えば、CdS、ZnS、ZnO等のII−VI族化合物半導体薄膜、これらの混晶であるZn(O、S)x等、例えば、In2O3、In2S3、In(OH)等のIn系化合物半導体薄膜であっても良い。
図2の実施形態では、n型の導電型を有し、禁制帯幅が広く透明で抵抗値が低く、厚さ0.5〜2.5μmのZnO:Bからなる半導体膜を成膜した。この窓層6は、スパッタ法、MOCVD法によって成膜可能である。また、本実施形態で用いたZnO:B以外にも、ZnO:Al、ZnO:Gaを使用可能であり、更に、透明導電膜(ITO)からなる半導体膜であっても良い。
2 アルカリ制御層
3 裏面電極層
4 p型光吸収層
5 バッファ層
6 透明導電膜(窓層)
Claims (15)
- 高歪点ガラス基板、アルカリ制御層、裏面電極層、p型CIS系光吸収層、n型透明導電膜の順に積層されたCIS系薄膜太陽電池において、
前記アルカリ制御層は、膜厚が2.00〜10.00nmでかつ屈折率が1.450〜1.500の範囲のシリカ膜であることを特徴とする、CIS系薄膜太陽電池。 - 請求項1に記載のCIS系薄膜太陽電池において、前記アルカリ制御層の膜厚は2.00〜7.00nmの範囲であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1又は2に記載のCIS系薄膜太陽電池において、前記アルカリ制御層の屈折率は1.470〜1.490の範囲であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜3の何れか1項に記載のCIS系薄膜太陽電池において、前記高歪点ガラス基板の歪点が560℃以上であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜4の何れか1項に記載のCIS系薄膜太陽電池において、前記高歪点ガラス基板の徐冷点が610℃以上であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜5の何れか1項に記載のCIS系薄膜太陽電池において、前記高歪点ガラス基板の熱膨張係数が8×10−6/℃〜9×10−6/℃の範囲であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜6の何れか1項に記載のCIS系薄膜太陽電池において、前記高歪点ガラス基板の密度が2.7〜2.9g/cm3の範囲であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜7の何れか1項に記載のCIS系薄膜太陽電池において、前記高歪点ガラスは1〜7重量%のNa2Oを含むことを特徴とする、CIS系薄膜太陽電池。
- 請求項8に記載のCIS系薄膜太陽電池において、前記Na2Oの含有量は3〜5重量%であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜8の何れか1項に記載のCIS系薄膜太陽電池において、前記高歪点ガラスは1〜15重量%の範囲のK2Oを含むことを特徴とする、CIS系薄膜太陽電池。
- 請求項10に記載のCIS系薄膜太陽電池において、前記K2Oの含有量は5〜10重量%の範囲であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜10の何れか1項に記載のCIS系薄膜太陽電池において、前記高歪点ガラスは1〜15重量%のCaOを含んでいることを特徴とする、CIS系薄膜太陽電池。
- 請求項12に記載のCIS系薄膜太陽電池において、前記CaOの含有量は1〜10重量%の範囲であることを特徴とする、CIS系薄膜太陽電池。
- 請求項1〜13の何れか1項に記載のCIS系薄膜太陽電池において、前記p型CIS系光吸収層はCu、In、Ga、Se、Sを主成分とする5元系化合物を材料とすることを特徴とする、CIS系薄膜太陽電池。
- 請求項14に記載のCIS系薄膜太陽電池において、前記p型CIS系光吸収層は、Cu、In、Gaを含む積層構造またはそれらの混晶の金属プリカーサ膜を、セレン化および硫化して形成されていることを特徴とする、CIS系薄膜太陽電池。
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JP2009148768A JP2011009287A (ja) | 2009-06-23 | 2009-06-23 | Cis系薄膜太陽電池 |
US13/379,871 US20120118384A1 (en) | 2009-06-23 | 2010-06-18 | Cis-based thin film solar cell |
DE112010002687T DE112010002687T5 (de) | 2009-06-23 | 2010-06-18 | Dünnfilmsolarzelle auf CIS-Basis |
PCT/JP2010/060793 WO2010150864A1 (ja) | 2009-06-23 | 2010-06-18 | Cis系薄膜太陽電池 |
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Cited By (3)
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JP2012243915A (ja) * | 2011-05-18 | 2012-12-10 | Kobe Steel Ltd | Cigs系太陽電池用金属酸化物薄膜、及び該薄膜を備えたcigs系太陽電池 |
KR101219835B1 (ko) | 2011-01-25 | 2013-01-21 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
WO2017047366A1 (ja) * | 2015-09-18 | 2017-03-23 | 旭硝子株式会社 | 太陽電池用ガラス基板及び太陽電池 |
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US20150000742A1 (en) * | 2013-07-01 | 2015-01-01 | Tsmc Solar Ltd. | Solar cell absorber thin film and method of fabricating same |
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US20120118384A1 (en) | 2012-05-17 |
WO2010150864A1 (ja) | 2010-12-29 |
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