JP2010258368A - 電子装置及びその製造方法 - Google Patents
電子装置及びその製造方法 Download PDFInfo
- Publication number
- JP2010258368A JP2010258368A JP2009109552A JP2009109552A JP2010258368A JP 2010258368 A JP2010258368 A JP 2010258368A JP 2009109552 A JP2009109552 A JP 2009109552A JP 2009109552 A JP2009109552 A JP 2009109552A JP 2010258368 A JP2010258368 A JP 2010258368A
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- Prior art keywords
- layer
- gas
- glass substrate
- zinc oxide
- sodium
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 147
- 239000011787 zinc oxide Substances 0.000 claims abstract description 72
- 239000011521 glass Substances 0.000 claims abstract description 63
- 239000011734 sodium Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 57
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 47
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 47
- 238000009792 diffusion process Methods 0.000 claims abstract description 38
- 230000003405 preventing effect Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 125000002524 organometallic group Chemical group 0.000 claims description 19
- 229910052783 alkali metal Inorganic materials 0.000 claims description 17
- 150000001340 alkali metals Chemical class 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 164
- 239000007789 gas Substances 0.000 description 116
- 229910021417 amorphous silicon Inorganic materials 0.000 description 44
- 238000006243 chemical reaction Methods 0.000 description 28
- 239000010408 film Substances 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 239000011669 selenium Substances 0.000 description 17
- 238000010248 power generation Methods 0.000 description 15
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 12
- 229910052711 selenium Inorganic materials 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 230000002265 prevention Effects 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 206010013647 Drowning Diseases 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
【解決手段】透明導電性層のうち、酸化亜鉛層がナトリウムの拡散を防止する作用を有することを見出し、当該酸化亜鉛層を電子装置の電極と同時に、ガラス基板からのナトリウムの拡散を防止する拡散防止層として利用した電子装置が得られる。
【選択図】 図3
Description
2 誘電体天板
3 上段シャワープレート
4 下段シャワープレート
5 上段ガス導入管
6 下段ガス導入管
7 被処理基板
8 有機金属系材料供給システム
9 MO容器
10 MO容器
11 処理室
12 排気系
13 ステージ
14、15 温調ヒータ
18 仕切り板
20 第1の電極(n+型ZnO層)
22 発電積層体
24 セレン層
26 第2の電極(Al層)
28 絶縁層(SiCN層)
30 ヒートシンク
100 光電変換素子
112 ガードガラス
114 ソーダガラス基板
201 絶縁層(SiCN層)
221 n+型a−Si層
222 i型a−Si層
223 p+型a−Si層
224 SiO2層
Claims (12)
- ナトリウムを含有するガラス基体と、該ガラス基体表面に設けられた酸化亜鉛層とを有し、前記酸化亜鉛層上に電子素子が形成されていることを特徴とする電子装置。
- 前記酸化亜鉛層はナトリウム拡散防止層であるとともに前記電子素子の透明電極として用いられていることを特徴とする請求項1に記載の電子装置。
- 前記酸化亜鉛層にはGa、Al、またはInがドープされていることを特徴とする請求項1または2に記載の電子装置。
- 前記酸化亜鉛層の厚さが150nm以上であることを特徴とする請求項1乃至3のいずれか1項に記載の電子装置。
- 前記電子素子が太陽電池素子であることを特徴とする請求項1乃至4のいずれか1項に記載の電子装置。
- 前記電子素子が表示素子を含むことを特徴とする請求項1乃至4のいずれか1項に記載の電子装置。
- ナトリウムを含有するガラス基体の少なくとも一方の主面に有機金属系材料を用いたプラズマCVD法によって酸化亜鉛層を成膜する工程を含むことを特徴とする電子装置の製造方法。
- 透明導電性層を用いてアルカリ金属の拡散を防止することを特徴とするアルカリ金属拡散防止方法。
- 請求項8において、前記透明導電性層は酸化亜鉛層であり、前記アルカリ金属はナトリウムであることを特徴とするアルカリ金属拡散防止方法。
- 請求項9において、前記酸化亜鉛層は、有機金属系材料を用いたプラズマCVD法によって成膜されたものであることを特徴とするアルカリ金属拡散防止方法。
- 請求項10において、前記酸化亜鉛層は、前記ナトリウムを前記アルカリ金属として含むガラス基板上に形成されることを特徴とするアルカリ金属拡散防止方法。
- 請求項11において、前記酸化亜鉛層にはGa,Al,またはInがドープされていることを特徴とするアルカリ金属拡散防止方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009109552A JP2010258368A (ja) | 2009-04-28 | 2009-04-28 | 電子装置及びその製造方法 |
US13/266,269 US20120037407A1 (en) | 2009-04-28 | 2010-04-10 | Electronic Apparatus and Method of Manufacturing the Same |
KR1020117026420A KR20120024594A (ko) | 2009-04-28 | 2010-04-12 | 전자 장치 및 그 제조 방법 |
CN2010800185629A CN102414832A (zh) | 2009-04-28 | 2010-04-12 | 电子装置以及其制造方法 |
PCT/JP2010/056531 WO2010125906A1 (ja) | 2009-04-28 | 2010-04-12 | 電子装置及びその製造方法 |
TW099112523A TW201103880A (en) | 2009-04-28 | 2010-04-21 | Electronic device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009109552A JP2010258368A (ja) | 2009-04-28 | 2009-04-28 | 電子装置及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013191339A Division JP2013251582A (ja) | 2013-09-17 | 2013-09-17 | 電子装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010258368A true JP2010258368A (ja) | 2010-11-11 |
Family
ID=43032059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009109552A Pending JP2010258368A (ja) | 2009-04-28 | 2009-04-28 | 電子装置及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120037407A1 (ja) |
JP (1) | JP2010258368A (ja) |
KR (1) | KR20120024594A (ja) |
CN (1) | CN102414832A (ja) |
TW (1) | TW201103880A (ja) |
WO (1) | WO2010125906A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2010001793A1 (ja) * | 2008-06-30 | 2011-12-22 | 国立大学法人東北大学 | ナトリウムを含有するガラス基体を有する電子装置及びその製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5782768B2 (ja) | 2011-03-23 | 2015-09-24 | セイコーエプソン株式会社 | 光電変換装置およびその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0388223U (ja) * | 1989-12-26 | 1991-09-10 | ||
JP2002025350A (ja) * | 2000-07-11 | 2002-01-25 | Sanyo Electric Co Ltd | 透明導電膜付き基板及びその作製方法,それを用いたエッチング方法並びに光起電力装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4187336A (en) * | 1977-04-04 | 1980-02-05 | Gordon Roy G | Non-iridescent glass structures |
JPH06104089A (ja) * | 1992-09-24 | 1994-04-15 | Fuji Electric Co Ltd | 薄膜発光素子 |
FR2736632B1 (fr) * | 1995-07-12 | 1997-10-24 | Saint Gobain Vitrage | Vitrage muni d'une couche conductrice et/ou bas-emissive |
JPH11121780A (ja) * | 1997-10-16 | 1999-04-30 | Asahi Glass Co Ltd | 太陽電池およびその製造方法 |
JP2002025250A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体記憶装置 |
JP2005310387A (ja) * | 2004-04-16 | 2005-11-04 | Ebara Corp | 透明電極及びその製造方法 |
WO2006013373A2 (en) * | 2004-08-04 | 2006-02-09 | Cambridge Display Technology Limited | Organic electroluminescent device |
JP2006165386A (ja) * | 2004-12-09 | 2006-06-22 | Showa Shell Sekiyu Kk | Cis系薄膜太陽電池及びその作製方法 |
-
2009
- 2009-04-28 JP JP2009109552A patent/JP2010258368A/ja active Pending
-
2010
- 2010-04-10 US US13/266,269 patent/US20120037407A1/en not_active Abandoned
- 2010-04-12 WO PCT/JP2010/056531 patent/WO2010125906A1/ja active Application Filing
- 2010-04-12 CN CN2010800185629A patent/CN102414832A/zh active Pending
- 2010-04-12 KR KR1020117026420A patent/KR20120024594A/ko not_active Application Discontinuation
- 2010-04-21 TW TW099112523A patent/TW201103880A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0388223U (ja) * | 1989-12-26 | 1991-09-10 | ||
JP2002025350A (ja) * | 2000-07-11 | 2002-01-25 | Sanyo Electric Co Ltd | 透明導電膜付き基板及びその作製方法,それを用いたエッチング方法並びに光起電力装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2010001793A1 (ja) * | 2008-06-30 | 2011-12-22 | 国立大学法人東北大学 | ナトリウムを含有するガラス基体を有する電子装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010125906A1 (ja) | 2010-11-04 |
KR20120024594A (ko) | 2012-03-14 |
US20120037407A1 (en) | 2012-02-16 |
TW201103880A (en) | 2011-02-01 |
CN102414832A (zh) | 2012-04-11 |
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