Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Definitions

• the present invention relates to a device for treating substrates, in particular semiconductor wafers, with a process container having at least one opening, in which the opening can be closed from the outside through the substrate.
• a device for treating substrates is known, for example, from DE 198 59 470, which did not pre-publish and which goes back to the same applicant.
• This device has a process tank which is open at the top and through which a metal-containing electrolyte flows from bottom to top. On its way up, the electrolyte flows through an anode designed as an expanded metal.
• a semiconductor wafer to be plated with the metal in the electrolyte is held by a substrate holder over an upper edge of the process container so that a flow gap is formed therebetween.
• the electrolyte flowing through the process tank is brought to overflow between the upper edge of the process tank and the substrate and is brought into contact with the wafer.
• the substrate has to be raised and, if necessary, a rinsing-drying unit, as described in DE 198 59 469, which was published by the same applicant and is not prepublished, has to be moved under the wafer.
• a device for treating substrates of the type mentioned in which an opening of a process container is closed from the outside by a substrate to be treated.
• the opening is arranged in a vertical wall of the process container in order to achieve a uniform flow of treatment fluid onto the substrate during metal plating.
• the substrate After a plating process, the substrate has to be reloaded in a complex manner in order to be treated, for example rinsed, in a further process container.
• reloading there is a risk of damage to the substrate due to the necessary handling steps. Furthermore, there is a risk during reloading that the treatment fluid dries due to the required reloading time and thereby damages the substrate.
• the present invention is therefore based on the object of providing a device of the type mentioned at the outset which enables simple, homogeneous treatment of a surface of the substrate to be treated and reduces the risk of damage to the substrate between successive treatment steps.
• a second process container is provided adjacent to the first process container, one wall of which is at least partially the container wall of the first process container containing the opening.
• the device provides an electrode opposite the opening for generating an electric field between the electrode and the substrate.
• the electrode is preferably an electrode plate which enables the application of a homogeneous electric field.
• the electrode plate has openings for passing at least one fluid, in particular a drying fluid, in order to enable a targeted, vertical fluid flow onto the substrate opposite the electrode.
• the electrode is preferably an anode.
• At least one sealing element is provided on the electrode and / or on a container wall surrounding the opening.
• the sealing element preferably radially surrounds the electrode and projects axially over a surface of the electrode facing the opening.
• at least one treatment fluid which can be introduced into the process container is an electrolyte containing metal and / or an etching medium.
• FIG. 1 shows a schematic illustration of an embodiment of the device according to the invention
• Fig. 3 shows an alternative embodiment of the invention with two process containers.
• the substrate holder 4 has a main body 42 and a slide rod 43 attached to it.
• the shift rod 43 can also be formed in one piece with the main body 42.
• a central vacuum finger 44 is arranged in the main body 42 and is connected to a vacuum line 45.
• a pressure sensor is arranged in the vacuum line 45 and is used to determine whether a sufficient negative pressure is maintained between the vacuum finger 44 and the wafer 31 for holding the wafer.
• the vacuum finger 44 is laterally movable out of the main body 42 and retractable into it so that it is completely sunk in the main body 42.
• the main body 42 there are also a plurality of openings 47 radially surrounding the vacuum fingers 44, which are connected to a vacuum line 48 and can be subjected to negative pressure in order to pull the wafer 31 firmly against the base body 42 of the substrate holder 4.
• the vacuum lines 45 and 48 can be subjected to negative pressure separately from one another, although they can be connected to a common negative pressure source.
• the wafer 31 is introduced vertically through a side opening (not shown) of the second process container 60 via a wafer handling device and is received on the substrate holder 4 in the manner described above.
• the substrate holder 4 is then moved in the direction of the wall 9 until the wafer surface 40 comes into contact with the seal 32 at the opening 29 and the process containers 2 and 60 seal against one another.
• the wafer is processed in the manner described above and electrically contacted directly behind the seal 32 on its surface 40.
• the opening 29, which can be closed off by the wafer 31, could, for example, also be formed in a bottom wall of a treatment device, the respective treatment fluid inlets and outlets having to be adapted accordingly.
• the movement of the substrate holder and the anode arrangement could be controlled such that the anode plate and / or the wafer closes the opening 29 at all times.
• the anode arrangement can be designed as a combined washing / drying unit, via which the washing and drying fluid is directed onto the wafer opposite the anode plate 20.

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Weting (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Electroplating Methods And Accessories (AREA)

Applications Claiming Priority (3)

Publications (1)

Family

ID=7900762

Family Applications (1)

Country Status (6)

Families Citing this family (4)

Family Cites Families (7)

• 1999
  • 1999-03-12 DE DE19911084A patent/DE19911084C2/de not_active Expired - Fee Related
• 2000
  • 2000-03-08 JP JP2000606035A patent/JP2002539334A/ja active Pending
  • 2000-03-08 WO PCT/EP2000/001984 patent/WO2000055888A1/de not_active Application Discontinuation
  • 2000-03-08 KR KR1020017011532A patent/KR20010103049A/ko not_active Application Discontinuation
  • 2000-03-08 EP EP00918768A patent/EP1161765A1/de not_active Withdrawn
  • 2000-03-09 TW TW089104247A patent/TW472316B/zh not_active IP Right Cessation

Non-Patent Citations (1)

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