EP1020935B1 - Dispositif composite émetteur de lumière, unité semiconductrice émettrice de lumière et méthode de fabrication - Google Patents

Dispositif composite émetteur de lumière, unité semiconductrice émettrice de lumière et méthode de fabrication Download PDF

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Publication number
EP1020935B1
EP1020935B1 EP00100496.9A EP00100496A EP1020935B1 EP 1020935 B1 EP1020935 B1 EP 1020935B1 EP 00100496 A EP00100496 A EP 00100496A EP 1020935 B1 EP1020935 B1 EP 1020935B1
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European Patent Office
Prior art keywords
led chip
light
electrodes
wavelength
electrode
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Expired - Lifetime
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EP00100496.9A
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German (de)
English (en)
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EP1020935A3 (fr
EP1020935A2 (fr
Inventor
Toshihide Maeda
Kunihiko Obara
Tomio Inoue
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of EP1020935A3 publication Critical patent/EP1020935A3/fr
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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K61/00—Culture of aquatic animals
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    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present invention relates to a composite light-emitting device including a light-emitting diode (LED) chip, which is implemented as multiple semiconductor layers stacked on a transparent substrate, and a resin member.
  • the resin member contains a photofluorescent compound that shifts the wavelength of the radiation emitted from the (LED) chip or a filtering compound that partially absorbs the radiation.
  • the present invention also relates to a semiconductor light-emitting unit including the composite light-emitting device and to a method for fabricating the same.
  • a technique of shifting the wavelength of radiation emitted from a light-emitting element using some phosphor has been well known in the art.
  • the inner wall of a glass neon tube is coated with a phosphor, thereby changing orange light into green one.
  • a photofluorescent compound is added into a molding resin compound for a gallium arsenide (GaAs) light-emitting diode (LED) to convert red emission into green one.
  • GaAs gallium arsenide
  • LED gallium arsenide
  • a white LED lamp which emits white light by coating a blue-light-emitting diode of a Group III nitride semiconductor like gallium nitride (GaN) with a photofluorescent compound, was put on the market. In this specification, such an LED will be simply referred to as a "GaN LED”.
  • Figure 14 illustrates a cross-sectional structure of a conventional white LED lamp.
  • the lamp includes: a first leadframe 100A, which is provided with a reflective cup 100a at the end; and a second leadframe 100B, the end of which is spaced apart from that of the reflective cup 100a.
  • a GaN LED 110 is bonded onto the bottom of the reflective cup 100a with an insulating adhesive 101.
  • One of the electrodes of the GaN LED 110 is connected to the first leadframe 100A with a first wire 102A , while the other electrode thereof is connected to the second leadframe 100B with a second wire 102B.
  • the reflective cup 100a is filled in with a wavelength-shifting resin medium 104 , which contains a photofluorescent compound that shifts the wavelength of the radiation emitted from the GaN LED 110 , so as to cover the GaN LED 110 .
  • the upper ends of the first and second leadframes 100A and 100B , as well as the reflective cup 100a are molded together within a spherical resin encapsulant 105 such as transparent epoxy resin to form the white LED lamp.
  • a chip LED may also be formed without using the reflective cup 100a or the spherical resin encapsulant 105 .
  • the GaN LED 110 is mounted onto a concave receptacle within a casing and then the gap between the LED 110 and the receptacle is filled in with a resin encapsulant containing a photofluorescent compound to secure them together.
  • Figures 15(a) and 15(b) illustrate the GaN LED for use in the conventional white LED lamp:
  • Figure 15(a) illustrates a planar layout thereof;
  • Figure 15(b) illustrates a cross-sectional structure thereof taken along the line XVb-XVb in Figure 15(a) .
  • the GaN LED 110 includes n-type GaN contact layer 112 , quantum well structure and p-type GaN contact layer 116, which are stacked in this order over a sapphire substrate 111.
  • the quantum well structure is formed on part of the upper surface of the n-type contact layer 112 and includes n-type AlGaN first barrier layer 113 , InGaN single quantum well (SQW) layer 114 and p-type AlGaN second barrier layer 115 .
  • an n-side electrode 117 is formed on the exposed part of the upper surface of the n-type contact layer 112 .
  • a current-diffusing transparent electrode 118 is formed on the p-type contact layer 116 .
  • a p-side electrode 119 is formed on the transparent electrode 118 to be located farthest from the n-side electrode 117 .
  • both the n- and p-side electrodes 117 and 119 are provided on the same side of the substrate 111 as that including the LED thereon.
  • the conventional white LED lamp shown in Figure 14 or the chip LED covers the GaN LED 110 by filling in the reflective cup 100a or the receptacle of the casing with the wavelength-shifting resin medium 104 containing the photofluorescent compound 103 .
  • the prior art construction is not applicable to a light-emitting unit including no such reflective cup 100a or receptacle.
  • the reflective cup 100a or receptacle should be filled in with the wavelength-shifting resin medium 104 , it is difficult to precisely control the amount of the resin medium to be filled in or the variation in concentration of the photofluorescent compound 103 .
  • the chromaticity changes significantly.
  • the yield of good light-emitting units with a desired chromaticity decreases.
  • the GaN LED 110 included in the white LED lamp or chip LED is the same as that included in a blue LED lamp.
  • the blue-light-emitting diode is poorly resistant to static electricity due to the physical constants (like the relative dielectric constant ⁇ ) of the constituent materials thereof or the structure thereof.
  • WO 98 34285 A1 describes a light emitting device having the features defined in the preamble of claim 1.
  • a first object of the present invention is getting a composite light-emitting device always covered with a wavelength-shifting resin medium irrespective the shapes of leadframes or casings.
  • a second object of the present invention is improving the resistance of a composite light-emitting device or semiconductor light-emitting unit to an overvoltage caused by static electricity.
  • a third object of the present invention is making the chromaticity of the emission finely adjustable while at the same time suppressing the variation in chromaticity.
  • an inventive composite light-emitting device includes an LED chip and a submount member.
  • the LED chip with an active region defined on a transparent substrate is mounted facedown on the submount member with the active region of the LED chip facing the principal surface of the submount member.
  • the submount member is electrically connected to the LED chip.
  • the LED chip is covered with a wavelength-shifting resin medium on the principal surface of the submount member.
  • the submount member is implemented as an overvoltage protector.
  • the light-emitting face of the substrate for the LED chip on the opposite side to its circuitry side and/or the outer surface of the wavelength-shifting resin medium above the light-emitting face are/is made parallel to the back surface of the submount member.
  • a composite light-emitting device includes the features of claim 1.
  • the multilayer structure of the LED chip which functions as active region of the LED chip is flip-chip bonded to the principal surface of the submount member. And the radiation emitted is allowed to pass through the backside of the substrate for the LED chip. Accordingly, the submount member, on which the LED chip is mounted, supports the wavelength-shifting resin member thereon, or acts as a receptacle for the resin member.
  • the LED chip can be covered with the wavelength-shifting resin member irrespective of the shape of a leadframe or a mount of a casing.
  • the principal surface of the submount member is preferably greater in area than that of the substrate for the LED chip and is preferably rectangular with a side of about 0.25 mm or more.
  • the LED chip preferably includes: a first electrode formed on the multilayer structure and electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer.
  • the submount member is preferably an overvoltage protector including first and second counter electrodes, which are formed on the principal surface thereof so as to face the first and second electrodes of the LED chip, respectively.
  • a voltage which is lower than a dielectric breakdown voltage but exceeds a predetermined voltage, is applied between the first and second electrodes of the LED chip, a current preferably flows between the first and second counter electrodes.
  • the first and second electrodes of the LED chip are preferably n- and p-side electrodes, respectively, and the overvoltage protector is preferably a diode using the first and second counter electrodes as anode and cathode, respectively.
  • a forward operating voltage of the diode is preferably lower than a reverse dielectric breakdown voltage of the LED chip.
  • a reverse breakdown voltage of the diode is preferably higher than an operating voltage of the LED chip but lower than a forward dielectric breakdown voltage of the LED chip.
  • first and second electrodes are preferably connected electrically to the first and second counter electrodes, respectively, with microbumps interposed therebetween.
  • the microbumps are preferably fused and bonded together with the associated electrodes facing the bumps.
  • the overvoltage protector preferably includes a backside electrode on another surface thereof opposite to the principal surface.
  • One of the first and second counter electrodes preferably includes a bonding pad to be electrically connected to an external component.
  • the polarity of the backside electrode is preferably opposite to that of the first or second counter electrode that includes the bonding pad.
  • the first and second semiconductor layers of the LED chip are preferably made of Group III nitride compound semiconductors, and the overvoltage protector is preferably a lateral diode made of silicon. P-and n-type semiconductor regions are defined in an upper part thereof closer to the principal surface.
  • the LED chip may include: a first electrode formed on the multilayer structure and electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer.
  • the submount member may be an auxiliary member made of a conductor.
  • the submount member may include: a first counter electrode, which is formed on the principal surface thereof so as to face the first electrode of the LED chip and is electrically isolated from the conductor; and a second counter electrode, which is formed on the principal surface thereof so as to face the second electrode of the LED chip and is electrically continuous with the conductor.
  • first and second electrodes are preferably connected electrically to the first and second counter electrodes, respectively, with microbumps interposed therebetween.
  • the microbumps are preferably fused and bonded together with the associated electrodes facing the bumps.
  • the auxiliary member preferably includes a backside electrode on another surface thereof opposite to the principal surface.
  • One of the first and second counter electrodes preferably includes a bonding pad to be electrically connected to an external component.
  • the backside electrode is preferably continuous electrically with the first or second counter electrode that includes no bonding pads.
  • the first and second semiconductor layers of the LED chip are preferably made of Group III nitride compound semiconductors, and the auxiliary member is preferably made of conductive silicon.
  • the wavelength-shifting resin member is preferably made of a transparent resin containing the photofluorescent compound at about 50 to about 90 percent by weight.
  • a light-emitting surface of the substrate for the LED chip on the opposite side to another surface thereof on which the multilayer structure is formed and/or an outer surface of part of the wavelength-shifting resin member above the light-emitting surface are/is preferably parallel to a surface of the submount member on which the backside electrode is formed.
  • the thickness of the part of the wavelength-shifting resin member above the light-emitting surface is preferably in a range from approximately 20 ⁇ m to approximately 110 ⁇ m, both inclusive.
  • the thickness of a part of the wavelength-shifting resin member covering the light-emitting surface and sides of the LED chip is preferably in the range from approximately 20 ⁇ m to approximately 110 ⁇ m, both inclusive.
  • a semiconductor light-emitting unit according to the present invention includes the features of claim 18.
  • An inventive semiconductor light-emitting unit can be formed easily to include the composite light-emitting device of the present invention.
  • the submount member preferably includes a bonding pad, which is formed on the principal surface thereof and electrically connected to the LED chip.
  • the submount member preferably further includes a backside electrode, which is formed on another surface thereof opposite to the principal surface on which the LED chip is mounted.
  • the backside electrode and the mount are preferably bonded together with a conductive paste.
  • the bonding pad is preferably connected electrically to a member other than the mount via a wire.
  • a method for fabricating a semiconductor light-emitting unit according to the present invention includes the steps defined in claim 20.
  • the submount members which will support the wavelength-shifting resin member thereon, are handled before these members are cut out from the wafer.
  • the wavelength-shifting resin medium can be supplied not just by using a dispenser but by some patterning technique for a wafer, e.g., screen printing. Accordingly, the resin medium can be shaped accurately and efficiently.
  • the method may further include, between the steps d) and e), the step of polishing a light-emitting surface of the substrate for each said LED chip on the opposite side to another surface thereof on which the multilayer structure is formed such that the light-emitting surface becomes parallel to a surface of the associated submount member on which the backside electrode is formed.
  • the method may further include, between the steps e) and f), the step of polishing an outer surface of part of the wavelength-shifting resin medium above each said LED chip such that the outer surface becomes parallel to the surface of the associated submount member on which the backside electrode is formed.
  • Figures 1(a) and 1(b) respectively illustrate a cross-section and a planar layout of a composite light-emitting device according to the first embodiment.
  • the composite light-emitting device includes a Group III nitride (e.g., GaN) LED chip 1 , which is flip-chip bonded onto the principal surface of a diode 2 functioning as submount member.
  • the entire surface of the LED chip 1 and part of the principal surface of the diode 2 are coated with a wavelength-shifting resin medium 3 .
  • the wavelength-shifting resin medium 3 contains, as an additive, a photofluorescent compound that shifts the wavelength of radiation emitted from the LED chip 1 or a filtering compound that absorbs the radiation partially.
  • the LED chip 1 includes a transparent sapphire substrate 10 .
  • the radiation emitted is allowed to pass through the upper surface (i.e., light-emitting surface) of the substrate 10 on the opposite side to another surface (i.e., lower surface) thereof facing the diode 2 .
  • n- and p-side electrodes 17 and 18 which are respectively connected to n- and p-type semiconductor layers of the LED chip 1 , are formed.
  • the diode 2 includes a body 20 made of silicon (Si), for example.
  • a p-type semiconductor region 20a is defined in the upper part of the body 20 under its exposed region and its region facing the n-side electrode 17 of the LED chip 1 .
  • the remaining portion of the body 20 is an n-type semiconductor region 20b .
  • a p-side counter electrode 21 i.e., first counter electrode
  • An n-side counter electrode 22 i.e., second counter electrode
  • a backside electrode 24 is further formed on the back surface of the body 20 , i.e., on the opposite side to the principal surface thereof, and is connected to the n-type semiconductor region 20b .
  • n- and p-side electrodes 17 and 18 of the LED chip 1 are electrically connected to the p- and n-side counter electrodes 21 and 22 of the diode 2 , respectively, by being bonded together with fused microbumps 25 of gold (Au).
  • the diameter and height of each of these microbumps 25 are about 100 ⁇ m and about 15 ⁇ m, respectively.
  • the exposed part of the p-side counter electrode 21 functions as a bonding pad 21a . Electrical continuity may be established between the diode 2 and an external component using the bonding pad 21a and the backside electrode 24 .
  • the LED chip 1 and the diode 2 are preferably coated with the wavelength-shifting resin medium 3 by a screen printing process, because the wavelength-shifting resin medium 3 is patternable according to the technique.
  • a potting process with a dispenser may be adopted.
  • one side of the diode chip 2 should preferably be longer than the diagonal of the LED chip 1 such that the wavelength-shifting resin medium 3 does not flow over the principal surface of the diode 2 .
  • the composite light-emitting device is characterized by flip-chip bonding the blue-light-emitting diode chip 1 , which is made of a Group III nitride poorly resistant to overvoltage, onto the protective diode 2 with the microbumps 25 interposed therebetween.
  • the light-emitting device is also characterized by partially coating the principal surface of the diode 2 with the wavelength-shifting resin medium 3 such that the medium 3 will be received and supported on the surface when cured.
  • the LED chip 1 can always be covered with the wavelength-shifting resin medium 3 irrespective of the shape of a lead-frame for an LED lamp or a wiring board for a chip LED. That is to say, no reflective cup or no mounting receptacle needs to be included in assembling members of a light-emitting unit.
  • a photofluorescent compound with a property changing blue emission into yellowish green one which is the complementary color of blue
  • a photofluorescent compound with a property changing blue emission into yellowish green one which is the complementary color of blue
  • part of the blue light emitted passes through the wavelength-shifting resin medium 3 as it is, while another part of the blue light is changed into the complementary color light due to the existence of the photofluorescent compound. And these colors are mixed together outside to produce non-colored light perceptible as white.
  • the radiation emitted from the LED chip 1 passes through the upper surface of the sapphire substrate 10 . Accordingly, the current-diffusing transparent electrode 118 , which is needed in the prior art LED 110 , is no longer necessary for the p-side electrode 18 of the LED chip 1 .
  • the p-side electrode 18 is only required to be relatively thick for the current diffusion purposes.
  • Dielectric breakdown happens in the prior art white LED lamp of GaN at a forward static voltage of about 100 V or at a reverse static voltage of about 30 V when electric discharge is caused between the lamp and a charged capacitor facing each other. These static voltages are much lower than those of a long-wavelength-oscillating LED made of any other bulk compound semiconductor such as GaP or GaAlAs. Thus, dielectric breakdown is far more likely to happen in such an LED lamp if no overvoltage protective function is provided therefor to prevent the external application of static electricity.
  • the diode 2 with the protective function and the LED chip 1 are connected in the reverse direction and in parallel to each other.
  • Figure 2 represents that connection as an equivalent circuit diagram.
  • the electrodes of mutually opposite polarities are connected together between the LED chip 1 and diode 2 , thereby preventing an overvoltage from being applied to the LED chip 1 externally. That is to say, the negative electrode of the LED chip 1 is connected to the positive one of the diode 2 and vice versa.
  • a resistive component produced by the n-type substrate of the diode 2 is added in series to the positive electrode of the LED chip 1 so as to function as a protective resistor R although its resistance is very low.
  • the reverse bias voltage applied to the LED chip 1 is cut off at 0.9 V.
  • the reverse breakdown voltage (i.e., Zener voltage) of the diode 2 can be set at around 10 V, the LED chip 1 can also be protected using the protective resistor R and the Zener voltage even when a forward bias voltage is applied thereto.
  • the forward and reverse dielectric breakdown voltages of the LED chip 1 are about 100 V and about 30 V.
  • Vf1 and Vb1 represent the forward and reverse dielectric breakdown voltages of the LED chip 1
  • Vf2 and Vb2 represent the forward operating voltage and reverse breakdown voltage of the diode 2
  • VF represents the operating voltage of the LED chip 1 , respectively. According to this notation, the following inequalities should be met to avoid the destructive breakdown: Vf ⁇ 2 ⁇ Vb ⁇ 1 VF ⁇ Vb ⁇ 2 ⁇ Vf ⁇ 1
  • Figures 3(a) and 3(b) respectively illustrate a planar layout and a cross-section taken along the line IIIb-IIIb in Figure 3(a) of the LED chip according to the first embodiment.
  • an AlN buffer layer 11 and an n-type GaN contact layer 12 are deposited in this order on a sapphire substrate 10 .
  • an n-type AlGaN first cladding layer 13 On part of the upper surface of the n-type contact layer 12 , an n-type AlGaN first cladding layer 13 , a multiple quantum well (MQW) structure 14 , a p-type AlGaN second cladding layer 15 and a p-type GaN contact layer 16 are stacked in this order one upon the other.
  • the MQW structure 14 is formed by stacking a multiplicity of quantum well layers, each consisting of an undoped InGaN well layer and an undoped GaN barrier layer.
  • an n-side electrode 17 containing aluminum (Al) is formed on an exposed part of the upper surface of the n-type contact layer 12 at a corner.
  • a p-side electrode 18 containing silver (Ag), titanium (Ti) and gold (Au) is formed on the p-type contact layer 16 without providing any current-diffusing transparent electrode thereon.
  • the LED chip 1 is substantially square on its planar layout. Each side of the square is about 0.3 mm long. It should be noted that each side of the squared LED chip 1 should preferably be 0.18 mm or more. This is because it would be difficult to shape an LED with a size of less than 0.18 mm into a chip form and because the reliability of the light-emitting diode deteriorates in such a small size.
  • Figures 4(a) and 4(b) respectively illustrate a planar layout and a cross-section taken along the line IVb-IVb in Figure 4(a) of the diode 2 functioning as a submount member according to the first embodiment.
  • the diode 2 includes the p-type semiconductor region 20a in the upper part of the n-type silicon body 20 .
  • the region 20a has been doped with p-type dopant ions such as boron ions to set the reverse breakdown voltage at around 10 V.
  • the p-side counter electrode 21 of Al is formed over, and connected to, the p-type semiconductor region 20a , and the n-side counter electrode 22 of Al is formed over the n-type semiconductor region 20b .
  • the n-side counter electrode 22 is connected to the n-type semiconductor region 20b but is separated from the p-side counter electrode 21 via the insulating film 23 .
  • the backside electrode 24 containing antimony (Sb), nickel (Ni) or gold (Au) is formed.
  • the backside electrode 24 may be electrically connected to an external lead, for example.
  • the size of the diode 2 is about 0.4 mm by about 0.6 mm in its planar layout. It should be noted that each side of the rectangular diode 2 as the submount member is preferably about 0.25 mm or more. This is because the diode 2 of such a size can function as a support (or receptacle) for the wavelength-shifting resin medium 3 most suitably. More preferably, when the LED chip 1 is about 0.28 mm ⁇ about 0.28 mm square, the diode 2 should be in the shape of a rectangle, at least one side of which is equal to or longer than the diagonal of the square, i.e., 0.40 mm or more.
  • the light-emitting device includes the submount member 2 for supporting the LED chip 1 and wavelength-shifting resin member 3 thereon.
  • the LED chip 1 is flip-chip bonded onto the principal surface of the diode 2 via the microbumps 25 .
  • a relatively wide bonding pad region which is needed for electrically connecting the LED chip 1 to the diode 2 using wires, is not necessary.
  • the composite light-emitting device of a size smaller than ordinary ones can be obtained.
  • the area of the n-side electrode 17 which does not contribute to the emission of radiation from the LED chip 1 , can be relatively small as shown in Figure 3(a) . Accordingly, the chip can be downsized without cutting down the desired emission area.
  • the LED substrate 10 is made of transparent sapphire and the emission is allowed to pass through the substrate side.
  • a higher luminous efficiency is attainable because the emission is not blocked by the electrodes.
  • the chip area of the composite light-emitting device which is made of relatively expensive compound semiconductors, can be reduced. As a result, a higher luminous efficiency is attainable at a reduced cost.
  • the device can dissipate heat more efficiently.
  • the heat generated from the LED 110 is radiated through the wavelength-shifting resin member 104 , first and second Au wires 102A , 102B and sapphire substrate.
  • the thermal conductivities of the wavelength-shifting resin member 104 and sapphire substrate are low.
  • the thermal conductivity of the wires 102A and 102B is high, these wires cannot dissipate heat satisfactorily, because the diameter thereof (in the range from 25 to 30 ⁇ m) is much smaller than the size of the LED 110 .
  • the heat generated from the LED chip 1 is dissipated to an external member through the n- and p-side electrodes 17 , 18 , the microbumps 25 with a diameter of about 100 ⁇ m and a height of about 15 ⁇ m and then the Si diode 2 with a thermal conductivity high enough to be usable as a heat sink.
  • the device of this embodiment can dissipate the heat very efficiently, and therefore the discoloration of the wavelength-shifting resin member 3 , which usually decreases the brightness, is avoidable. As a result, such a device ensures long-term reliability.
  • the lateral diode 2 is used as an exemplary overvoltage protector.
  • any of various other diodes including vertical pn diode, pin diode, Schottky-barrier diode, Zener diode, tunnel diode and Gunn diode is also applicable.
  • a Gunn diode utilizing the Gunn effect of compound semiconductors may be formed on the substrate 10 of the LED chip 1 .
  • a field effect transistor with its threshold voltage set higher than the operating voltage of the light-emitting diode but lower than the forward and reverse dielectric breakdown voltages thereof may also be provided as the overvoltage protector.
  • Figure 5 illustrates a cross-sectional structure of a composite light-emitting device according to a modified example of the first embodiment.
  • Figure 6 illustrates a planar layout of an auxiliary member implemented as a submount member according to this modified example.
  • the same members as those illustrated in Figure 1(a) will be identified by the same reference numerals and the description thereof will be omitted herein.
  • the LED chip is supported over the auxiliary member 4 with no protective function, not the diode 2 as a submount member for the LED chip 1 , with the microbumps 25 interposed therebetween as shown in Figure 5 .
  • the LED substrate 10 is made of transparent silicon carbide (SiC) instead of sapphire, then the auxiliary member 4 with a simple configuration is applicable, because the LED chip with such a substrate is highly resistant to static electricity.
  • the auxiliary member 4 includes first and second counter electrodes 42 and 43 over the principal surface of a substrate 40 made of conductive silicon.
  • the first counter electrode 42 is formed over, and electrically isolated from, the substrate 40 with an insulating film 41 of silicon dioxide, for example, interposed therebetween.
  • the second counter electrode 43 is electrically continuous with the substrate 40 .
  • the exposed part of the first counter electrode 42 serves as a bonding pad 42a .
  • a backside electrode 44 is formed on another surface of the substrate 40 on the opposite side to its principal surface and is electrically continuous with the second counter electrode 43 .
  • the first counter electrode 42 faces and is connected to the n-side electrode 17 of the LED chip 1
  • the second counter electrode 43 faces and is connected to the p-side electrode 18 of the LED chip 1
  • the size of the auxiliary member 4 is about 0.4 mm by about 0.6 mm in its planar layout. It should be noted that since the substrate 40 has no polarity, the electrodes 17 and 18 may be connected to the counter electrodes 43 and 42 , respectively.
  • the composite light-emitting device according to this modified example is provided with the auxiliary member 4 including the conductive substrate 40 , the following effects are attainable.
  • the submount member is provided for supporting the LED chip 1 and wavelength-shifting resin member 3 , which are indispensable for a composite light-emitting device.
  • the composite light-emitting device can be mounted onto a semiconductor light-emitting unit easily and just as intended irrespective of the shape of the mount provided for the light-emitting unit.
  • the LED chip 1 is flip-chip bonded onto the principal surface of the auxiliary member 4 , which functions as the submount member, via the microbumps 25 .
  • the composite light-emitting device of a size smaller than ordinary ones can be obtained.
  • the emission of the LED chip 1 is allowed to pass through the transparent substrate 10 .
  • a higher luminous efficiency is attainable while cutting down the chip cost.
  • the heat generated from the LED chip 1 can be dissipated very efficiency through the auxiliary member 4 to an external member, thus preventing a decrease in brightness.
  • the Group III nitride LED chip 1 is used as an exemplary light-emitting element.
  • a surface-emitting laser diode is hereby also disclosed.
  • the composite light-emitting device may include a longer-wavelength-oscillating light-emitting diode containing a Group III arsenide such as GaAs.
  • Figures 7(a) and 7(b) illustrate cross-sectional structures of two exemplary composite light-emitting devices according to the second embodiment.
  • the same members as those of the composite light-emitting device according to the first embodiment illustrated in Figure 1(a) will be identified by the same reference numerals.
  • a surface 20c of the diode 2 as a submount member, which is opposite to another surface thereof facing the LED chip 1 , i.e., the surface on which the backside electrode is formed, is substantially parallel to the upper surface 3a of the wavelength-shifting resin member 3 .
  • the back surface 20c of the diode 2 , the upper surface 10a of the LED substrate 10 and the upper surface 3a of the wavelength-shifting resin member 3 are all substantially parallel to each other.
  • the chromaticity of the white light passing through the wavelength-shifting resin member 3 is adjustable and the variation in chromaticity is suppressible.
  • the diode 2 may be replaced with the auxiliary member 4 shown in Figure 5 .
  • the white emission is obtained as a mixture of the blue light that has passed through the wavelength-shifting resin member 3 as it is and the light that has been changed into the complementary color light due to the existence of the photofluorescent compound in the resin member 3 . Accordingly, the chromaticity of the white emission is determined primarily by the content of the photofluorescent compound and the thickness D of an upper part of the wavelength-shifting resin member 3 .
  • the present inventors analyzed the dependence of chromaticity coordinates (x, y) on the content of the photofluorescent compound in the wavelength-shifting resin member 3 and on the thickness D using an LED chip 1 emitting blue light with a dominant wavelength of approximately 465 to 470 nm.
  • Table 1 illustrates the results of this analysis: [Table 1] 10 ⁇ m 20 ⁇ m 50 ⁇ m 100 ⁇ m 11 ⁇ m 120 ⁇ m 30wt% x 0.19 x 0.22 x 0.23 x 0.23 x 0.24 x 0.24 y 0.24 y 0.27 y 0.28 y 0.28 y 0.29 y 0.29 50wt% x 0.20 x 0.25 x 0.28 x 0.30 x 0.30 x 0.36 y 0.25 y 0.30 y 0.33 y 0.35 y 0.35 y 0.41 90wt% x 0.24 x 0.30 x 0.32 x 0.33 x 0.35 x 0.37 y 0.29 y 0.35 y 0.37 y 0.38 y 0.40 y 0.42
  • the content of the photofluorescent compound is represented in percentages by weight and the thickness D is shown in micrometers. In this case, an epoxy resin compound was used as the transparent resin and (Y, Gd) 3 (
  • the wavelength-shifting resin member 3 can be precisely provided on the upper surface 10a of the LED substrate 10 at a uniform thickness of about 50 ⁇ m in the following manner. Specifically, the LED chip 1 may be bonded onto the diode 2 included in a wafer such that the upper surface 10a of the LED substrate 10 becomes parallel to the back surface 20c of the diode 2 . Then, the upper surface 10a of the LED substrate 10 may be coated with the wavelength-shifting resin medium 3 to the thickness of about 50 ⁇ m by a screen printing technique, for example, such that the upper surface of the medium 3 becomes parallel to the upper surface 10a of the LED substrate 10 . In this case, the upper surface of the diode 2 could be a reference plane. However, the back surface 20c is preferred, because there is some unevenness on the upper surface of the diode 2 due to the existence of the electrodes 21 and 22 .
  • the thickness D of that part of the wavelength-shifting resin member 3 above the substrate 10 may also be uniformized by coating the upper surface 10a with relatively thick wavelength-shifting resin medium 3 and then polishing and parallelizing the surface of the medium 3 with respect to the reference plane.
  • the chromaticity is adjustable to an arbitrary value and the variation in thickness D of that part can be minimized among the diodes 2 on the wafer.
  • the thickness D defined between the center of the upper surface 10a of the LED substrate 10 and the upper surface 3a of the wavelength-shifting resin member 3 may be set at the predetermined value of 50 ⁇ m. Then, after the LED chip 1 has been bonded onto the diode 2 on the wafer, the upper surface 10a of the LED substrate 10 may be polished to be parallel to the reference plane 20c as shown in Figure 7(b) .
  • the upper surface 10a of the LED substrate 10 and/or the upper surface 3a of the wavelength-shifting resin member 3 provided on the substrate 10 are/is substantially parallel to the back surface 20c of the diode 2 as a reference plane.
  • the chromaticity of white light is adjustable and the variation thereof is suppressible.
  • the thickness of another part of the wavelength-shifting resin member 3 covering the sides of the LED chip 1 should also be substantially uniform.
  • the thickness is preferably in the range from 20 ⁇ m to 110 ⁇ m, both inclusive.
  • not only that part of the wavelength-shifting resin member 3 above the upper surface 10a of the LED substrate 10 but also another part thereof surrounding the LED chip 1 can have their thicknesses optimized. As a result, good white emission can be obtained without causing any color unevenness.
  • Figure 8 illustrates a cross-sectional structure of a semiconductor light-emitting unit according to the third embodiment, or a white LED lamp including the composite light-emitting device of the present invention.
  • the white LED lamp according to the third embodiment includes first and second leadframes 60A and 60B .
  • a reflective cup 60a with an opening at the top is provided for the first leadframe 60A at one end thereof.
  • the top of the second lead-frame 60B is spaced apart from the reflective cup 60a .
  • the composite light-emitting device 5 according to the first embodiment is bonded and electrically connected onto a die pad at the bottom of the reflective cup 60a with silver (Ag)-containing paste 61 interposed between the backside electrode 24 of the diode 2 and the die pad.
  • silver (Ag)-containing paste 61 interposed between the backside electrode 24 of the diode 2 and the die pad.
  • the bonding pad 21a of the p-side counter electrode in the diode 2 of the composite light-emitting device 5 is electrically connected to the second leadframe 60B with a gold (Au) wire 62 .
  • a resin encapsulant 63A e.g., transparent epoxy resin.
  • the upper half of the resin encapsulant 63A is molded in a hemispherical shape.
  • Figure 9 illustrates a cross-sectional structure of a semiconductor light-emitting unit according to a modified example of the third embodiment, or a chip LED lamp including the composite light-emitting device of the present invention.
  • the chip LED lamp according to this modified example includes an insulating wiring board 64 and the composite light-emitting device 5 .
  • first and second interconnection lines 65A and 65B are formed selectively.
  • the composite light-emitting device 5 is bonded and electrically connected onto a die pad of the first interconnection line 65A on the wiring board 64 with the Ag-containing paste 61 interposed between the backside electrode 24 of the diode 2 and the die pad.
  • the bonding pad 21a of the p-side counter electrode in the diode 2 of the composite light-emitting device 5 is electrically connected to the second interconnection line 65B with the gold (Au) wire 62 .
  • a bonding region on the wiring board 64 covering the composite light-emitting device 5 , wire 62 and surrounding regions thereof, are molded together within a resin encapsulant 63B , e.g., transparent epoxy resin.
  • the upper and side faces of the resin encapsulant 63B are planarized.
  • the thickness T of the resin encapsulant 63B for the chip LED lamp which is defined between the mount of the wiring board 64 and the upper surface of the resin encapsulant 63B , can be reduced. Since the LED lamp is thinned, the mount volume can also be smaller, thus advantageously contributing to downsizing of light-emitting units.
  • the light-emitting unit including the composite light-emitting device 5 of the present invention is even thinner in size than the prior art chip LED lamp including a receptacle in its casing and filling in the receptacle with the wavelength-shifting resin medium.
  • the semiconductor light-emitting units according to the third embodiment and its modified example are applicable no matter whether or not the mount is provided or how the mount is shaped in a supporting member like the reflective cup 60a or the casing receptacle for the composite light-emitting device.
  • the diode 2 is provided as the submount member, overvoltage protective function is also attainable by the submount member.
  • auxiliary member 4 shown in Figure 5 may substitute as an alternative submount member for the diode 2 .
  • Figures 10(a) through 11(b) illustrate cross-sectional structures corresponding to respective process steps for fabricating a semiconductor light-emitting unit according to the fourth embodiment.
  • the light-emitting unit also includes the composite light-emitting device of the present invention.
  • a number of LED chips 1 shown in Figure 3(a) are fabricated.
  • Each of the LED chips 1 is fabricated in the following manner.
  • an AlN buffer layer 11 and an n-type GaN contact layer 12 are deposited by an MOVPE process, for example, in this order on a sapphire wafer.
  • an n-type AlGaN first cladding layer 13 , an MQW structure 14 , a p-type AlGaN second cladding layer 15 and a p-type GaN contact layer 16 are stacked in this order on the n-type contact layer 12 .
  • the MQW structure 14 is formed by stacking a multiplicity of quantum well layers, each consisting of an InGaN well layer and a GaN barrier layer. Then, parts of the n-type contact layer 12 are selectively exposed by photolithography and dry etching techniques and n-side electrodes 17 containing aluminum (Al) are formed by an evaporation technique on the exposed parts of the n-type contact layer 12 . Also, p-side electrodes 18 containing silver (Ag), titanium (Ti) and gold (Au) are formed on the p-type contact layer 16 .
  • the backside of the wafer which is opposite to its circuitry side, is attached to an adhesive sheet 70 and the wafer is diced into multiple chips, thereby obtaining a plurality of LED chips 1 .
  • the adhesive sheet 70 is stretched with appropriate tension applied thereto, thereby increasing the space between adjacent ones of the chips. This is done to get each chip easily adhered to, and then held (picked up) by, a jig in a subsequent bonding process step.
  • diodes 2 are fabricated and the microbump 25 are formed on the diodes 2 as shown in Figure 10(b) .
  • multiple p-type semiconductor regions 20a are defined in columns and rows by an ion implantation technique within an n-type silicon wafer 20A .
  • the p- and n-side counter electrodes 21 and 22 of aluminum are formed by an evaporation technique, for example, on the principal surface of the wafer 20A .
  • the backside electrode 24 containing Sb, Ni or Au is formed on the other surface of the wafer 20A opposite to the principal surface.
  • the microbumps 25 are formed by a stud bump forming technique on the p- and n-side counter electrodes 21 and 22 on the wafer 20A .
  • each LED substrate 10 which is opposite to its circuitry side, is held by a bonder 71 .
  • the n- and p-side electrodes 17 , 18 of each LED chip 1 are aligned with the p- and n-side counter electrodes 21 , 22 of the associated diode 2 and these electrodes are brought into contact with the microbumps 25 .
  • the microbumps 25 are fused with heat, ultrasonic waves and load applied thereto, thereby bonding and electrically connecting the corresponding electrodes of the LED chips 1 and diodes 2 together.
  • the tact (or cycle) time of this chip bonding process step which includes recognition, transportation, alignment and bonding of the LED chips 1 , can be about 3 seconds or less in total.
  • the alignment accuracy should be about 15 ⁇ m or less.
  • a gap of about 15 ⁇ m is formed between the LED chips 1 and the diodes 2 . Accordingly, almost no shortcircuit failure happens between them.
  • the principal surface of the wafer 20A is coated with a wavelength-shifting resin medium 3 containing a photofluorescent compound to cover the LED chips 1 and to leave bonding pad areas over the p-type semiconductor regions 20a .
  • a patternable method like screen printing is preferably adopted so as not to contaminate the bonding pads of the diodes 2 with the wavelength-shifting resin medium 3 as described above.
  • the wafer 20A is attached to an adhesive sheet (not shown) and then diced into a plurality of chips, corresponding to respective composite light-emitting devices 5 including the diode 2 , using a dicer 72 .
  • each composite light-emitting device 5 is bonded and electrically connected to the first leadframe 60A with conductive paste interposed between the die pad of the first leadframe 60A and the backside electrode 24 of the diode 2 .
  • the bonding pad of the p-side counter electrode 21 in the diode 2 of the composite light-emitting device 5 is electrically connected to the second leadframe 60B with the wire 62 .
  • the ends of the first and second leadframes 60A and 60B , as well as the composite light-emitting device 5 are molded together within the transparent epoxy resin encapsulant 63A .
  • the composite light-emitting device 5 itself includes a submount member (i.e., the diode 2 ) for supporting the wavelength-shifting resin member 3 thereon.
  • a white-light-emitting unit with overvoltage protective function can be obtained without depending on the shape of the supporting member on which the composite light-emitting device 5 is mounted.
  • a chip LED may be formed by replacing the first and second leadframes 60A and 60B with the insulating wiring board 64 as shown in Figure 9 .
  • the auxiliary member 4 may be used instead of the diode 2 .
  • the microbumps 25 may be formed on the p- and n-side electrodes of the LED chip 1 .
  • the stud bumps 25 are used as the microbumps.
  • plated bumps may be formed by a plating technique. In such a case, the diameter of each microbump can be reduced, thus downsizing the LED chip 1 and cutting down the fabrication cost thereof.
  • the plated bumps can be formed at far more accurate positions. As a result, the assembly yield can be improved.
  • the LED chip 1 is disclosed in accordance with the present invention as defined by the appended claims.
  • a laser diode is hereby also disclosed.
  • the LED chip does not have to emit blue light using GaN.
  • Figures 12(a) through 13(c) illustrate cross-sectional structures corresponding to respective process steps for fabricating a semiconductor light-emitting unit according to the fifth embodiment.
  • the semiconductor light-emitting unit also includes the composite light-emitting device of the present invention.
  • multiple p-type semiconductor regions 20a are defined within an n-type silicon wafer 20A .
  • the p- and n-side counter electrodes 21 and 22 are formed on the principal surface of the wafer 20A .
  • the backside electrode 24 is formed on the other surface of the wafer 20A opposite to the principal surface.
  • the microbumps 25 are formed by a stud bump forming or plating technique on the p- and n-side counter electrodes 21 and 22 on the wafer 20A .
  • the n-and p-side electrodes 17 , 18 of each LED chip 1 are aligned with the p- and n-side counter electrodes 21, 22 of the associated diode 2 using the bonder 71 and these electrodes are brought into contact with the microbumps 25 .
  • the microbumps 25 are fused, thereby bonding the corresponding electrodes of the LED chips 1 and diodes 2 together and electrically and mechanically connecting the LED chips 1 and diodes 2 together.
  • the respective upper surfaces of the LED substrates 10 are polished using a polisher 73 such that the upper surface of each substrate 10 becomes substantially parallel to the back surface of the wafer 20A .
  • the gap between the wafer 20A and the LED chips 1 should preferably be filled in with a photoresist resin, for example, to prevent the LED chips 1 from being detached from the wafer 20A due to the friction caused between the LED chips 1 and the polishing slurry.
  • the principal surface of the wafer 20A is coated by a screen printing technique with a wavelength-shifting resin medium 3 to cover the LED chips 1 and to leave bonding pad areas over the p-type semiconductor regions 20a .
  • a wavelength-shifting resin medium 3 to cover the LED chips 1 and to leave bonding pad areas over the p-type semiconductor regions 20a .
  • each wavelength-shifting resin members 3 is polished to a predetermined thickness using the polisher 73 again so as to be substantially parallel to the backside of the wafer 20A .
  • each resin member 3 is also partially cut away such that part of the wavelength-shifting resin member 3 covering the sides of the LED chip 1 has a substantially uniform predetermined thickness.
  • each of the composite light-emitting devices 5 obtained is mounted onto a leadframe or wiring board, and then molded within a resin encapsulant, thereby completing a semiconductor light-emitting unit.
  • the method according to the fifth embodiment can attain the same effects as those attainable by the method of the fourth embodiment.
  • the upper surface of each wavelength-shifting resin member 3 is made substantially parallel to the back surface of the diode 2 on which the backside electrode is formed, no chromaticity variation would be brought about among the composite light-emitting devices 5 .
  • light-emitting units that can emit radiation at a desired chromaticity can be obtained at an increased yield.
  • one of the polishing process steps shown in Figures 12(d) and 13(b) may be carried out selectively. However, both of these process steps are preferably performed. This is because if the thickness of that part of the wavelength-shifting resin member 3 above the LED chip 1 is uniformized, then variation in chromaticity of emission can be further suppressed. As a result, the chromaticity is adjustable even more precisely.

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Claims (22)

  1. Dispositif luminescent composite comprenant :
    un circuit intégré (1) de diode électroluminescente (DEL) comprenant un substrat transparent (10) et une structure multicouche formée sur le substrat, la structure multicouche comprenant des première et deuxième couches semi-conductrices (12, 16) de premier et deuxième types de conductivité, respectivement ;
    un élément de sous-monture (2) pour y monter le circuit intégré de DEL (1), la surface principale de l'élément de sous-monture faisant face à la structure multicouche, l'élément de sous-monture étant connecté électriquement au circuit intégré de DEL (1) ;
    caractérisé par
    un élément en résine de décalage de longueur d'onde (3), qui est pourvu sur la surface principale de l'élément de sous-monture pour recouvrir le circuit intégré de DEL (1) et contient un composé photofluorescent ou de filtrage, le composé photofluorescent décalant la longueur d'onde de radiation qui a été émise par le circuit intégré de DEL (1), le composé de filtrage absorbant partiellement la radiation, dans lequel l'élément de sous-monture (2) fonctionne comme un support pour l'élément en résine de décalage de longueur d'onde (3), et dans lequel l'élément en résine de décalage de longueur d'onde (3) ne s'étend pas au-delà de la surface principale de l'élément de sous-monture (2).
  2. Dispositif selon la revendication 1, dans lequel la surface principale de l'élément de sous-monture est supérieure à la surface du substrat pour le circuit intégré de DEL (1) et est rectangulaire avec un côté supérieur ou égal à environ 0,25 mm.
  3. Dispositif selon la revendication 1, dans lequel le circuit intégré de DEL (1) comprend :
    une première électrode (17) formée sur la structure multicouche et connectée électriquement à la première couche semi-conductrice (12), et
    une deuxième électrode (18) connectée électriquement à la deuxième couche semi-conductrice (16), et
    dans lequel l'élément de sous-monture (2) est un protecteur de surtension comprenant une première contre-électrode (21) et une deuxième contre-électrode (22), qui sont formées sur la surface principale correspondante de manière à faire face aux première et deuxième électrodes du circuit intégré de DEL (1), respectivement, et
    dans lequel, quand une tension qui est inférieure à une tension de claquage diélectrique mais dépasse une tension prédéterminée est appliquée entre les première et deuxième électrodes du circuit intégré de DEL (1), un courant s'écoule entre les première et deuxième contre-électrodes.
  4. Dispositif selon la revendication 3, dans lequel la première électrode (17) et la deuxième électrode (18) du circuit intégré de DEL (1) sont des électrodes de côté N et de côté P, respectivement, et
    dans lequel le protecteur de surtension est une diode qui utilise la première contre-électrode (21) et la deuxième contre-électrode (22) comme anode et cathode, respectivement.
  5. Dispositif selon la revendication 4, dans lequel une tension de fonctionnement directe de la diode est inférieure à une tension de claquage diélectrique inverse du circuit intégré de DEL (1), et
    dans lequel une tension de claquage inverse de la diode est supérieure à une tension de fonctionnement du circuit intégré de DEL (1) mais inférieure à une tension de claquage diélectrique directe du circuit intégré de DEL (1).
  6. Dispositif selon la revendication 3, dans lequel la première électrode (17) et la deuxième électrode (18) sont connectées électriquement à la première contre-électrode (21) et à la deuxième contre-électrode (22), respectivement, avec des micro-bosses (25) interposées.
  7. Dispositif selon la revendication 6, dans lequel les micro-bosses (25) sont fusionnées et adhérées conjointement aux électrodes associées qui font face aux bosses, et
    dans lequel le protecteur de surtension comprend une électrode de face arrière (24) sur une autre surface correspondante opposée à la surface principale, et
    dans lequel une contre-électrode parmi la première contre-électrode (21) et la deuxième contre-électrode (22) comprend un plot d'adhésion (21a) à connecter électriquement à un composant externe, et
    dans lequel la polarité de l'électrode de face arrière (24) est opposée à celle de la première ou de la deuxième contre-électrode qui comprend le plot d'adhésion (21a).
  8. Dispositif selon la revendication 7, dans lequel les première et deuxième couches semi-conductrices (12, 16) du circuit intégré de DEL (1) sont constituées de semi-conducteurs à composé nitrure du groupe III, et
    dans lequel le protecteur de surtension est une diode latérale (2) constituée de silicium, des zones semi-conductrices de type P et de type N étant définies dans une partie supérieure correspondante plus proche de la surface principale.
  9. Dispositif selon la revendication 1, dans lequel le circuit intégré de DEL (1) comprend :
    une première électrode (17) formée sur la structure multicouche et connectée électriquement à la première couche semi-conductrice (12) ; et
    une deuxième électrode (18) connectée électriquement à la deuxième couche semi-conductrice (16), et
    dans lequel l'élément de sous-monture (2) est un élément auxiliaire constitué d'un conducteur, et
    dans lequel l'élément de sous-monture comprend :
    une première contre-électrode (21), qui est formée sur la surface principale correspondante de manière à faire face à la première électrode du circuit intégré de DEL (1) et est isolée électriquement du conducteur ; et
    une deuxième contre-électrode (22), qui est formée sur la surface principale correspondante de manière à faire face à la deuxième électrode du circuit intégré de DEL (1) et est électriquement continue avec le conducteur.
  10. Dispositif selon la revendication 9, dans lequel les première et deuxième électrodes (17, 18) sont connectées électriquement aux première et deuxième contre-électrodes (21, 22), respectivement, avec des micro-bosses (25) interposées.
  11. Dispositif selon la revendication 10, dans lequel les micro-bosses (25) sont fusionnées et adhérées conjointement aux électrodes associées qui font face aux bosses, et
    dans lequel l'élément auxiliaire (2) comprend une électrode de face arrière (24) sur une autre surface correspondante opposée à la surface principale, et
    dans lequel une contre-électrode parmi les première et deuxième contre-électrodes (21, 22) comprend un plot d'adhésion (21a) à connecter électriquement à un composant externe, et
    dans lequel l'électrode de face arrière est électriquement continue avec la première ou deuxième contre-électrode qui ne comporte pas de plots d'adhésion.
  12. Dispositif selon la revendication 11, dans lequel les première et deuxième couches semi-conductrices (12, 16) du circuit intégré de DEL (1) sont constituées de semi-conducteurs à composé nitrure du groupe III, et
    dans lequel l'élément auxiliaire (2) est constitué de silicium conducteur.
  13. Dispositif selon la revendication 1, dans lequel l'élément en résine de décalage de longueur d'onde (3) est constitué d'une résine transparente contenant le composé photofluorescent à raison d'environ 50 à 90 pour cent en masse.
  14. Dispositif selon la revendication 13, dans lequel une surface luminescente du substrat (10) pour le circuit intégré de DEL (1) sur le côté opposé à une autre surface correspondante sur laquelle la structure multicouche est formée et/ou une surface externe d'une partie de l'élément en résine de décalage de longueur d'onde (3) au-dessus de la surface luminescente est/sont parallèle/s à une surface de l'élément de sous-monture (2) sur laquelle l'électrode de face arrière (24) est formée.
  15. Dispositif selon la revendication 14, dans lequel l'épaisseur de la partie de l'élément en résine de décalage de longueur d'onde (3) au-dessus de la surface luminescente est approximativement comprise dans une plage de 20 µm à 110 µm, ces valeurs étant toutes deux incluses.
  16. Dispositif selon la revendication 13, dans lequel l'épaisseur d'une partie de l'élément en résine de décalage de longueur d'onde (3) recouvrant la surface luminescente et des côtés du circuit intégré de DEL (1) est approximativement comprise dans une plage de 20 µm à 110 µm, ces valeurs étant toutes deux incluses.
  17. Dispositif selon la revendication 1, dans lequel l'élément en résine de décalage de longueur d'onde (3) revêt partiellement la surface principale de l'élément de sous-monture (2).
  18. Unité luminescente semi-conductrice comprenant :
    le dispositif luminescent composite selon la revendication 1 ; et
    une grille de connexion (60a) ou une carte de câblage comprenant une monture pour supporter une surface de l'élément de sous-monture (2) sur le côté opposé à la surface principale correspondante sur lequel le circuit intégré de DEL (1) est monté ; et
    un encapsulant en résine transparente (63a) qui recouvre la monture ainsi que le dispositif luminescent composite.
  19. Unité selon la revendication 18, dans lequel l'élément de sous-monture (2) comprend un plot d'adhésion (21a), qui est formé sur la surface principale correspondante et est connecté électriquement au circuit intégré de DEL (1), et une électrode de face arrière (24), qui est formée sur une autre surface correspondante opposée à la surface principale sur laquelle le circuit intégré de DEL (1) est monté, et
    dans laquelle l'électrode de face arrière et la monture sont adhérées conjointement avec une pâte conductrice (61), et
    dans laquelle le plot d'adhésion est connecté électriquement à un élément (60b) autre que la monture via un fil (62).
  20. Procédé de fabrication d'une unité luminescente semi-conductrice, comprenant les étapes suivantes :
    a) fabrication d'un circuit intégré (1) de diode électroluminescente (DEL) en formant une structure multicouche sur un substrat transparent (10) et en formant des électrodes (17, 18) sur la structure multicouche, la structure multicouche comprenant des première et deuxième couches semi-conductrices (12, 16) de premier et deuxième types de conductivité, respectivement ;
    b) fabrication d'un élément de sous-monture (2) comprenant des contre-électrodes (21, 22) sur la surface principale correspondante, les contre-électrodes faisant face aux électrodes du circuit intégré de DEL (1) ;
    c) formation de micro-bosses (25) sur les électrodes ou sur les contre-électrodes ;
    d) montage du circuit intégré de DEL (1) tourné vers le bas sur la surface principale de l'élément de sous-monture de telle sorte que la structure multicouche fait face à la surface principale et que les électrodes du circuit intégré de DEL (1) sont connectées électriquement aux contre-électrodes via les micro-bosses ;
    e) revêtement du circuit intégré de DEL (1) avec un milieu de résine de décalage de longueur d'onde (3) qui sera supporté sur la surface principale de l'élément de sous-monture lorsqu'il est durci, le milieu de résine de décalage de longueur d'onde contenant un composé photofluorescent ou de filtrage, le composé photofluorescent décalant la longueur d'onde de radiation qui a été émise par le circuit intégré de DEL (1), le composé de filtrage absorbant partiellement la radiation, dans lequel :
    à l'étape a), de multiples circuits imprimés de DEL (1) sont fabriqués ;
    à l'étape b), de multiples éléments de sous-monture (20) sont fabriqués sur une tranche de semi-conducteur, chaque dit élément de sous-monture comprenant en outre : un plot d'adhésion (21a) sur la surface principale correspondante ; et une électrode de face arrière (24) sur une autre surface correspondante opposée à la surface principale ;
    à l'étape c), les micro-bosses (25) sont formées selon une technique de plaquage ou de formage par bosse de plot ;
    à l'étape d), les micro-bosses (25) sont fusionnées en y appliquant des ondes ultrasonores ou de la chaleur de telle sorte que les micro-bosses et les électrodes associées sont adhérées ensemble, connectant ainsi électriquement les circuits imprimés de DEL (1) aux éléments de sous-monture associés (2) ;
    à l'étape e), une pluralité de dispositifs luminescents composites sont obtenus, qui chacun comprennent l'un des circuits imprimés de DEL (1) et sont associés à l'un des éléments de sous-monture (2),
    le procédé comprenant en outre les étapes suivantes :
    f) découpe de la tranche de semi-conducteur, sur laquelle les dispositifs luminescents composites ont été formés, en de multiples circuits intégrés ;
    g) fixation de chaque dit dispositif luminescent composite inclus sur l'un des circuits intégrés sur une monture d'une grille de connexion (60a) ou d'une carte de câblage, de telle sorte que l'électrode de face arrière (24) de l'élément de sous-monture (2) correspondante est adhérée à la monture via une pâte conductrice (61) ; et
    h) connexion du plot d'adhésion (21a) de chaque dit élément de sous-monture (2) à la grille de connexion (60b) ou carte de câblage associée avec un fil (62).
  21. Procédé selon la revendication 20, comprenant en outre, entre les étapes d) et e), l'étape de polissage d'une surface luminescente du substrat (10) pour chaque dit circuit intégré de DEL (1) sur le côté opposé à une autre surface correspondante sur laquelle la structure multicouche est formée de telle sorte que la surface luminescente devient parallèle à une surface de l'élément de sous-monture (2) associé sur laquelle l'électrode de face arrière (24) est formée.
  22. Procédé selon la revendication 20, comprenant en outre, entre les étapes e) et f), l'étape de polissage d'une surface externe d'une partie du milieu à résine de décalage de longueur d'onde (3) au-dessus de chaque dit circuit intégré de DEL (1) de telle sorte que la surface externe devient parallèle à la surface de l'élément de sous-monture (2) associé sur laquelle l'électrode de face arrière (24) est formée.
EP00100496.9A 1999-01-11 2000-01-11 Dispositif composite émetteur de lumière, unité semiconductrice émettrice de lumière et méthode de fabrication Expired - Lifetime EP1020935B1 (fr)

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Families Citing this family (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6903376B2 (en) 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6603258B1 (en) * 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
KR100372834B1 (ko) * 2000-05-25 2003-02-19 에이프로시스템즈 (주) 형광 물질을 이용한 복합 파장의 광을 발생시키는 발광반도체 소자
JP2002190622A (ja) * 2000-12-22 2002-07-05 Sanken Electric Co Ltd 発光ダイオード用透光性蛍光カバー
DE60137995D1 (de) 2000-08-09 2009-04-30 Avago Technologies General Ip Lichtemittierende Vorrichtungen
DE10039433B4 (de) * 2000-08-11 2017-10-26 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
JP4763122B2 (ja) * 2000-09-20 2011-08-31 スタンレー電気株式会社 発光ダイオード及びその製造方法
JP2002100813A (ja) * 2000-09-22 2002-04-05 Matsushita Electric Ind Co Ltd 波長変換ペースト材料と半導体発光装置、及びその製造方法
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP2002158376A (ja) * 2000-11-22 2002-05-31 Matsushita Electric Ind Co Ltd 発光ダイオード照明装置
JP5110744B2 (ja) * 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
JP3895570B2 (ja) 2000-12-28 2007-03-22 株式会社ルネサステクノロジ 半導体装置
JP2002232013A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子
JP4050482B2 (ja) * 2001-04-23 2008-02-20 豊田合成株式会社 半導体発光装置
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP3812827B2 (ja) * 2001-08-23 2006-08-23 ソニー株式会社 発光素子の取り付け方法
TW595012B (en) 2001-09-03 2004-06-21 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device
TW535307B (en) * 2002-03-04 2003-06-01 United Epitaxy Co Ltd Package of light emitting diode with protective diode
EP1536487A4 (fr) * 2002-05-28 2008-02-06 Matsushita Electric Works Ltd Element electroluminescent, dispositif electroluminescent et dispositif d'eclairage par emission de surface utilisant ledit element
CA2489237A1 (fr) * 2002-06-13 2003-12-24 Cree, Inc. Emetteur a l'etat solide au phosphore sature
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
KR100497121B1 (ko) * 2002-07-18 2005-06-28 삼성전기주식회사 반도체 led 소자
TW554553B (en) * 2002-08-09 2003-09-21 United Epitaxy Co Ltd Sub-mount for high power light emitting diode
US7692289B2 (en) * 2002-08-12 2010-04-06 Adc Telecommunications, Inc. Semiconductor devices with improved heat dissipation and method for fabricating same
US6642550B1 (en) * 2002-08-26 2003-11-04 California Micro Devices Silicon sub-mount capable of single wire bonding and of providing ESD protection for light emitting diode devices
KR100499129B1 (ko) 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
EP1556904B1 (fr) 2002-10-30 2018-12-05 OSRAM Opto Semiconductors GmbH Procede pour produire une source lumineuse a diodes electroluminescentes comprenant un element de conversion de luminescence
TW200414572A (en) * 2002-11-07 2004-08-01 Matsushita Electric Ind Co Ltd LED lamp
US7180099B2 (en) * 2002-11-11 2007-02-20 Oki Data Corporation Semiconductor apparatus with thin semiconductor film
CN100352069C (zh) * 2002-11-25 2007-11-28 松下电器产业株式会社 Led照明光源
US6897486B2 (en) 2002-12-06 2005-05-24 Ban P. Loh LED package die having a small footprint
US7692206B2 (en) * 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
JP2004193393A (ja) * 2002-12-12 2004-07-08 Matsushita Electric Ind Co Ltd 複合発光素子
CA2517009A1 (fr) * 2003-02-26 2004-09-10 Cree, Inc. Source de lumiere blanche composite et son procede d'obtention
WO2004100279A2 (fr) * 2003-04-30 2004-11-18 Cree, Inc. Blocs de photoemetteurs haute puissance a optiques compactes
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP3813599B2 (ja) 2003-06-13 2006-08-23 ローム株式会社 白色発光の発光ダイオード素子を製造する方法
JP2005044963A (ja) * 2003-07-28 2005-02-17 Tdk Corp レーザダイオードモジュール
EP1649514B1 (fr) * 2003-07-30 2014-01-01 Panasonic Corporation Dispositif electroluminescent a semi-conducteur, module electroluminescent et appareil d'eclairage
WO2005022654A2 (fr) * 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Dispositif electroluminescent a semiconducteur, module electroluminescent, appareil d'eclairage, element d'affichage et procede de fabrication du dispositif electroluminescent a semiconducteur
JP4400327B2 (ja) * 2003-09-11 2010-01-20 セイコーエプソン株式会社 タイル状素子用配線形成方法
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
JP4496774B2 (ja) * 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
WO2005062389A2 (fr) * 2003-12-24 2005-07-07 Matsushita Electric Industrial Co., Ltd. Dispositif electroluminescent a semi-conducteur, module et appareil d'eclairage, element d'affichage, et procede de fabrication du dispositif electroluminescent a semi-conducteur
JP5346909B2 (ja) * 2004-02-03 2013-11-20 パナソニック株式会社 半導体発光装置、照明モジュール、照明装置、および表示素子
US7488990B2 (en) * 2004-04-02 2009-02-10 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Using multiple types of phosphor in combination with a light emitting device
US20050227394A1 (en) * 2004-04-03 2005-10-13 Bor-Jen Wu Method for forming die protecting layer
JP2005311089A (ja) * 2004-04-22 2005-11-04 Fuji Xerox Co Ltd 垂直共振器型面発光半導体レーザ装置
KR20070012501A (ko) * 2004-04-28 2007-01-25 마츠시타 덴끼 산교 가부시키가이샤 발광장치 및 그 제조방법
JP2005332857A (ja) * 2004-05-18 2005-12-02 Showa Denko Kk 発光ダイオードの製造方法および発光ダイオード
JP4624719B2 (ja) * 2004-05-18 2011-02-02 昭和電工株式会社 発光ダイオードの製造方法および発光ダイオード
JP2005332858A (ja) * 2004-05-18 2005-12-02 Showa Denko Kk 発光ダイオードの製造方法および発光ダイオード
US7456499B2 (en) 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US7280288B2 (en) * 2004-06-04 2007-10-09 Cree, Inc. Composite optical lens with an integrated reflector
JP4747516B2 (ja) * 2004-06-08 2011-08-17 富士ゼロックス株式会社 垂直共振器型面発光半導体レーザ装置
KR100623024B1 (ko) * 2004-06-10 2006-09-19 엘지전자 주식회사 고출력 ｌｅｄ 패키지
JP4608966B2 (ja) * 2004-06-29 2011-01-12 日亜化学工業株式会社 発光装置の製造方法
CN100386891C (zh) * 2004-07-02 2008-05-07 北京工业大学 高抗静电高效发光二极管及制作方法
DE102004036157B4 (de) * 2004-07-26 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Leuchtmodul
JP4617761B2 (ja) * 2004-08-03 2011-01-26 日亜化学工業株式会社 発光装置の製造方法
US7087463B2 (en) * 2004-08-04 2006-08-08 Gelcore, Llc Laser separation of encapsulated submount
JP2006059851A (ja) * 2004-08-17 2006-03-02 Matsushita Electric Ind Co Ltd 半導体発光装置、それを用いた照明装置およびその製造方法
JP2006086300A (ja) * 2004-09-15 2006-03-30 Sanken Electric Co Ltd 保護素子を有する半導体発光装置及びその製造方法
KR100576872B1 (ko) * 2004-09-17 2006-05-10 삼성전기주식회사 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자
KR100506743B1 (ko) * 2004-09-17 2005-08-08 삼성전기주식회사 트랜지스터를 구비한 플립칩 구조 발광장치용 서브 마운트
JP2006086469A (ja) 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法
US7372198B2 (en) * 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
US7081667B2 (en) * 2004-09-24 2006-07-25 Gelcore, Llc Power LED package
JP4579654B2 (ja) * 2004-11-11 2010-11-10 パナソニック株式会社 半導体発光装置及びその製造方法、並びに半導体発光装置を備えた照明モジュール及び照明装置
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Ind Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
DE112005002889B4 (de) * 2004-12-14 2015-07-23 Seoul Viosys Co., Ltd. Licht emittierendes Bauelement mit einer Mehrzahl Licht emittierender Zellen und Baugruppen-Montage desselben
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
KR100696062B1 (ko) * 2005-01-05 2007-03-15 엘지이노텍 주식회사 발광 반도체 패키지
US7777247B2 (en) * 2005-01-14 2010-08-17 Cree, Inc. Semiconductor light emitting device mounting substrates including a conductive lead extending therein
US7655997B2 (en) * 2005-01-26 2010-02-02 Harvatek Corporation Wafer level electro-optical semiconductor manufacture fabrication mechanism and a method for the same
US20100301349A1 (en) * 2005-01-26 2010-12-02 Harvatek Corporation Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same
US20060258031A1 (en) * 2005-01-26 2006-11-16 Bily Wang Wafer-level electro-optical semiconductor manufacture fabrication method
JP4617902B2 (ja) * 2005-01-31 2011-01-26 信越半導体株式会社 発光素子及び発光素子の製造方法
US20150295154A1 (en) * 2005-02-03 2015-10-15 Epistar Corporation Light emitting device and manufacturing method thereof
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
JP4731949B2 (ja) * 2005-02-25 2011-07-27 株式会社沖データ 半導体装置、ｌｅｄヘッド、及びこれを用いた画像形成装置
EP2280430B1 (fr) * 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. Boîtier de diodes électroluminescentes à matrice de cellules photoemettrices montées en serie
KR100593934B1 (ko) * 2005-03-23 2006-06-30 삼성전기주식회사 정전기 방전 보호 기능을 갖는 발광 다이오드 패키지
US7535180B2 (en) * 2005-04-04 2009-05-19 Cree, Inc. Semiconductor light emitting circuits including light emitting diodes and four layer semiconductor shunt devices
TWI261932B (en) * 2005-05-06 2006-09-11 Harvatek Corp Fabrication method of optoelectronic chip package structure having control chip
TWI389337B (zh) 2005-05-12 2013-03-11 Panasonic Corp 發光裝置與使用其之顯示裝置及照明裝置，以及發光裝置之製造方法
US7105863B1 (en) * 2005-06-03 2006-09-12 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source with improved life
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
WO2006135130A1 (fr) * 2005-06-15 2006-12-21 Lg Chem, Ltd. Dispositif a diode electroluminescente utilisant une section d'interconnexion electroconductrice
KR101161383B1 (ko) 2005-07-04 2012-07-02 서울반도체 주식회사 발광 다이오드 및 이를 제조하기 위한 방법
CN100454593C (zh) * 2005-08-03 2009-01-21 刘士龙 一种基板型白光二极管的制造方法
DE102005040558A1 (de) * 2005-08-26 2007-03-01 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip
US7736070B2 (en) * 2005-08-31 2010-06-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Double mold optocoupler
US20070096120A1 (en) * 2005-10-27 2007-05-03 Gelcore Llc Lateral current GaN flip chip LED with shaped transparent substrate
KR100765385B1 (ko) * 2005-12-16 2007-10-10 서울옵토디바이스주식회사 다수의 발광 셀이 어레이된 발광 소자
US7614759B2 (en) 2005-12-22 2009-11-10 Cree Led Lighting Solutions, Inc. Lighting device
JP2007180111A (ja) * 2005-12-27 2007-07-12 Showa Denko Kk 発光装置
US8030575B2 (en) * 2005-12-29 2011-10-04 Sensor Electronic Technology, Inc. Mounting structure providing electrical surge protection
US7928462B2 (en) * 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
JP4172501B2 (ja) * 2006-05-31 2008-10-29 ソニー株式会社 発光ダイオード点灯回路、照明装置及び液晶表示装置
WO2007142946A2 (fr) 2006-05-31 2007-12-13 Cree Led Lighting Solutions, Inc. Dispositif et procédé d'éclairage
JP2007324417A (ja) * 2006-06-01 2007-12-13 Sharp Corp 半導体発光装置とその製造方法
JP2006245626A (ja) * 2006-06-19 2006-09-14 Citizen Electronics Co Ltd 発光ダイオードの製造方法および構造
KR100866879B1 (ko) * 2006-12-19 2008-11-04 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
TWI418054B (zh) 2006-08-08 2013-12-01 Lg Electronics Inc 發光裝置封裝與製造此封裝之方法
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
US7964892B2 (en) * 2006-12-01 2011-06-21 Nichia Corporation Light emitting device
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
TWI481064B (zh) * 2007-02-13 2015-04-11 3M Innovative Properties Co 具有透鏡之發光二極體裝置及其製造方法
US9944031B2 (en) * 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101346341B1 (ko) * 2007-05-08 2013-12-31 서울반도체 주식회사 서브마운트를 갖는 발광장치 및 그 제조방법
TWI351115B (en) * 2007-05-18 2011-10-21 Everlight Electronics Co Ltd Light-emitting diode module and the manufacturing method thereof
CN101958391B (zh) * 2007-08-03 2013-06-26 松下电器产业株式会社 发光装置
TWI396298B (zh) 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
TWI401820B (zh) * 2007-11-07 2013-07-11 Ind Tech Res Inst 發光元件及其製作方法
US8946987B2 (en) 2007-11-07 2015-02-03 Industrial Technology Research Institute Light emitting device and fabricating method thereof
JP2009146571A (ja) * 2007-12-11 2009-07-02 Yazaki Corp 制御回路内蔵ユニット
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8362703B2 (en) * 2007-12-20 2013-01-29 Luminus Devices, Inc. Light-emitting devices
KR101428085B1 (ko) * 2008-07-24 2014-08-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TW201015743A (en) * 2008-10-01 2010-04-16 Formosa Epitaxy Inc LED and manufacturing method thereof
CN102361953A (zh) * 2009-03-27 2012-02-22 柯尼卡美能达精密光学株式会社 荧光体部件、荧光体部件的制造方法以及照明装置
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8679865B2 (en) * 2009-08-28 2014-03-25 Samsung Electronics Co., Ltd. Resin application apparatus, optical property correction apparatus and method, and method for manufacturing LED package
US10264637B2 (en) 2009-09-24 2019-04-16 Cree, Inc. Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof
US9713211B2 (en) 2009-09-24 2017-07-18 Cree, Inc. Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof
US8901845B2 (en) 2009-09-24 2014-12-02 Cree, Inc. Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods
KR101034054B1 (ko) * 2009-10-22 2011-05-12 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
JP5349260B2 (ja) 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
TWI409975B (zh) * 2009-12-01 2013-09-21 Au Optronics Corp 具大發光角度之光源裝置及其製造方法
US8476836B2 (en) 2010-05-07 2013-07-02 Cree, Inc. AC driven solid state lighting apparatus with LED string including switched segments
US8330178B2 (en) * 2010-05-11 2012-12-11 Advanced Semiconductor Engineering, Inc. Package structure and package process of light emitting diode
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
KR101154709B1 (ko) * 2010-07-28 2012-06-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
CN101937959A (zh) * 2010-08-12 2011-01-05 武汉华灿光电有限公司 带滤光膜的发光二极管及其制造方法
JP2012044034A (ja) * 2010-08-20 2012-03-01 Stanley Electric Co Ltd 半導体発光装置および半導体発光装置の製造方法
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8569974B2 (en) 2010-11-01 2013-10-29 Cree, Inc. Systems and methods for controlling solid state lighting devices and lighting apparatus incorporating such systems and/or methods
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US8802461B2 (en) * 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
WO2012131532A1 (fr) * 2011-03-25 2012-10-04 Koninklijke Philips Electronics N.V. Couche de matériau fluorescent au silicone sensible aux ultraviolets à motifs sur des diodes électroluminescentes
US9839083B2 (en) 2011-06-03 2017-12-05 Cree, Inc. Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same
US8742671B2 (en) 2011-07-28 2014-06-03 Cree, Inc. Solid state lighting apparatus and methods using integrated driver circuitry
CN103000768A (zh) * 2011-09-09 2013-03-27 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
JP5902908B2 (ja) 2011-10-19 2016-04-13 スタンレー電気株式会社 半導体発光装置および車両用灯具
JP6100794B2 (ja) * 2011-12-08 2017-03-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 厚い金属層を有する半導体発光デバイス
US8847516B2 (en) 2011-12-12 2014-09-30 Cree, Inc. Lighting devices including current shunting responsive to LED nodes and related methods
US8823285B2 (en) 2011-12-12 2014-09-02 Cree, Inc. Lighting devices including boost converters to control chromaticity and/or brightness and related methods
JP5683507B2 (ja) * 2012-01-30 2015-03-11 株式会社沖データ 発光デバイス及びその製造方法
JP6154392B2 (ja) * 2012-02-16 2017-06-28 シチズン電子株式会社 発光ダイオードおよび発光ダイオードを有する照明装置
US8952413B2 (en) * 2012-03-08 2015-02-10 Micron Technology, Inc. Etched trenches in bond materials for die singulation, and associated systems and methods
KR20140036670A (ko) 2012-09-17 2014-03-26 삼성전자주식회사 발광소자 패키지 및 이를 구비한 차량용 헤드라이트
CN103887411A (zh) * 2012-12-22 2014-06-25 鸿富锦精密工业（深圳）有限公司 荧光粉设置方法及发光二极管制造方法
DE102013202904A1 (de) * 2013-02-22 2014-08-28 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
JP6331376B2 (ja) * 2013-12-17 2018-05-30 日亜化学工業株式会社 発光装置の製造方法及び発光装置
DE102014102293A1 (de) 2014-02-21 2015-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung optoelektronischer Halbleiterbauteile und optoelektronisches Halbleiterbauteil
JP6592902B2 (ja) * 2014-03-28 2019-10-23 日亜化学工業株式会社 発光装置
KR102171024B1 (ko) * 2014-06-16 2020-10-29 삼성전자주식회사 반도체 발광소자 패키지의 제조 방법
JP2016062986A (ja) * 2014-09-16 2016-04-25 株式会社東芝 半導体装置と半導体装置の製造方法
KR102227769B1 (ko) * 2014-11-06 2021-03-16 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
TWI587548B (zh) * 2015-09-07 2017-06-11 隆達電子股份有限公司 發光二極體封裝件
JP6212589B2 (ja) 2016-03-28 2017-10-11 シャープ株式会社 発光装置および画像表示装置
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
KR102610885B1 (ko) * 2019-01-10 2023-12-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
JP7239840B2 (ja) * 2020-08-31 2023-03-15 日亜化学工業株式会社 発光装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120562A (ja) 1992-10-01 1994-04-28 Nichia Chem Ind Ltd 青色発光デバイス
JPH06177429A (ja) 1992-12-08 1994-06-24 Nichia Chem Ind Ltd 青色ｌｅｄ素子
JPH0799345A (ja) 1993-09-28 1995-04-11 Nichia Chem Ind Ltd 発光ダイオード
US5557115A (en) 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
JP3627822B2 (ja) 1994-08-18 2005-03-09 ローム株式会社 半導体発光素子、およびその製造方法
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
CN1264228C (zh) 1996-06-26 2006-07-12 奥斯兰姆奥普托半导体股份有限两合公司 发光半导体器件、全色发光二极管显示装置及其应用
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JPH10163526A (ja) 1996-11-27 1998-06-19 Matsushita Electron Corp 発光素子及び発光ダイオード
US6333522B1 (en) 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
JP2998696B2 (ja) * 1997-05-17 2000-01-11 日亜化学工業株式会社 発光ダイオード
JP3257455B2 (ja) 1997-07-17 2002-02-18 松下電器産業株式会社 発光装置
JP3048368U (ja) 1997-10-27 1998-05-06 興 陳 発光ダイオード
JP3241338B2 (ja) * 1998-01-26 2001-12-25 日亜化学工業株式会社 半導体発光装置
DE29804149U1 (de) * 1998-03-09 1998-06-18 Chen, Hsing, Hsinchu Leuchtdiode (LED) mit verbesserter Struktur
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置

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KR100853064B1 (ko) 2008-08-19
KR20000053441A (ko) 2000-08-25
JP2000208822A (ja) 2000-07-28
KR20060128762A (ko) 2006-12-14
US6696704B1 (en) 2004-02-24
US20020028527A1 (en) 2002-03-07
KR100686416B1 (ko) 2007-02-23

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