CN103000768A - 发光二极管封装结构的制造方法 - Google Patents
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Abstract
一种发光二极管封装结构的制造方法,包括以下步骤:步骤一,提供基板;步骤二,设置发光二极管芯片于基板上;步骤三,在基板上形成封装体,该封装体覆盖于发光二极管芯片之上;步骤四,利用工具将封装体的顶面平整为平面。采用本发明的发光二极管封装结构制造方法,利用工具将封装体的顶面平整为平面,保证了发光二极管封装结构的出光强度,进而有效提高制造发光二极管封装结构的良品率。
Description
技术领域
本发明涉及一种半导体发光元件,尤其涉及一种发光二极管封装结构的制造方法。
背景技术
发光二极管凭借其高光效、低能耗、无污染等优点,已得到了广泛应用,大有取代传统光源的趋势。
通常,在发光二极管封装结构的制造过程中,通过在发光二极管芯片上覆盖一封装体以保护该发光二极管芯片。一般通过点胶的方式将液态封装体注入到发光二极管芯片上,再通过挤压定型使封装体的顶面平整,而后使封装体凝固成型。然而,由于液态封装体凝固为固态封装体之后,封装体的顶面很可能会是向内凹陷的曲面,这与预先设定的平面有较大的偏差,并且还无法对其做出调整,导致发光二极管封装结构的出光效果不佳,良率下降。
发明内容
有鉴于此,有必要提供一种可提高发光二极管封装结构的良品率的制造方法。
一种发光二极管封装结构的制造方法,包括以下步骤:步骤一,提供基板;步骤二,设置发光二极管芯片于基板上;步骤三,在基板上形成封装体,该封装体覆盖于发光二极管芯片之上;步骤四,利用工具将封装体的顶面平整为平面。
上述发光二极管封装结构制造方法中,通过工具将封装体的顶面研磨为平面,保证了发光二极管封装结构的出光效果,进而有效提高制造发光二极管封装结构的良品率。
下面参照附图,结合具体实施例对本发明作进一步的描述。
附图说明
图1为本发明第一实施例的发光二极管封装结构的制造方法的流程图。
图2示出了图1中发光二极管封装结构的制造方法的各步骤。
图3为本发明的发光二极管封装结构的制造方法所得的发光二极管封装结构的剖面示意图。
图4示出了本发明第二实施例的发光二极管封装结构的制造方法的各步骤。
主要元件符号说明
基板 | 10 |
第一电连接部 | 11 |
第二电连接部 | 12 |
反射杯 | 20 |
容置部 | 22,22a |
发光二极管芯片 | 30 |
导线 | 40 |
封装体 | 50 |
工具 | 60 |
挡板 | 70 |
粗糙面 | 100 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
图1示出了本发明第一实施例的发光二极管封装结构制造方法的流程。该发光二极管封装结构的制造方法至少包括如下步骤:
步骤一,提供基板10;
步骤二,设置发光二极管芯片30于基板10上;
步骤三,在基板10上形成封装体50,该封装体50覆盖于发光二极管芯片30之上;
步骤四,利用工具60将封装体50的顶面平整为平面。
下面结合图2及图3对该流程作详细说明。
所述基板10可以是铝基电路板或者是表面设置有导电线路的陶瓷基板如氧化铝基板、氧化锌基板或者硅基板等。首先,在所述基板10的表面上设置第一电连接部11和第二电连接部12。所述第一电连接部11和第二电连接部12之间相互绝缘。在本实施例中,所述第一电连接部11和所述第二电连接部12从基板10的上表面延伸到下表面,从而形成一种可表面贴装的结构。接着,可选择性地在所述基板10的上表面上设置一反射杯20。该反射杯20在其中央围设出一容置部22,以供所述发光二极管芯片30容置于该容置部22内。所述反射杯20环绕所述发光二极管芯片30,用以反射汇聚发光二极管芯片30发出的光线。
然后,在第一电连接部11的上表面上设置所述发光二极管芯片30。所述发光二极管芯片30包括半导体发光结构(未标示)以及设置在半导体发光结构顶部的第一电极(未标示)和第二电极(未标示)。在本实施例中,所述第一电极、第二电极间隔设置在半导体发光结构远离基板10的顶面上。所述第一电极通过一导线40与第一电连接部11形成电性连接,同样,所述第二电极通过另一导线40与第二电连接部12形成电性连接。所述导线40具有良好的导电性能,通常由金属材料制成。另外,所述发光二极管芯片30的两电极并不限于上述实施例中分布于发光二极管芯片30的同一侧,其也可以位于发光二极管芯片30的相反两侧。此种情况仅需要一根导线40连接相应的电极及电连接部11、12,另外的电极及电连接部11、12可直接通过导电胶实现电连接而无需使用导线40。
接着,形成一封装体50于所述基板10上、反射杯20的容置部22内并覆盖所述发光二极管芯片30。该封装体50通过点胶工艺完成,材料采用硅树脂、环氧树脂或其他透明材料。在本实施例中,该封装体50内可以包含荧光转换材料,以接收发光二极管芯片30的光线后可改变发出光的光特性。其中荧光转换材料可以为石榴石(garnet)结构的化合物、硫化物(sulfide)、磷化物(phosphate)、氮化物(nitride)、氮氧化物(oxynitride)、硅酸盐类(silicate)、砷化物、硒化物或碲化物中的至少一种。在本实施例中,所述封装体50填满所述容置部22,且在该封装体50凝固成固态后,该封装体50的顶部仍高出反射杯20。
提供一工具60,利用该工具60对封装体50的顶部进行加工,将所述封装体50的顶面平整为平面。在本实施例中,该工具60为研磨工具,通过对封装体50的顶部进行不断研磨,将所述封装体50的顶面研磨为平面。为加工方便,所述工具60对封装体50高出反射杯20的部分进行研磨,使得该封装体50的顶面与反射杯20的顶面齐平。
最后,通过切割分离得到若干独立的发光二极管封装结构,每个独立的发光二极管封装结构至少包含一发光二极管芯片30。
另外,为提高发光二极管封装结构的光萃取率,在所述工具60研磨封装体50的顶面时,可以将封装体50的顶面加工为粗糙面100,如图3所示,该粗糙面100可以为波浪面、网格面或者其他凹凸状表面。之后,再通过切割分离得到若干独立的发光二极管封装结构
图4示出了本发明第二实施例的发光二极管封装结构制造方法的流程。该发光二极管封装结构的制造方法至少包括如下步骤:
步骤一,提供基板10;
步骤二,设置发光二极管芯片30于基板10上;
步骤三,在基板10上形成封装体50,该封装体50覆盖于发光二极管芯片30之上;
步骤四,利用工具60将封装体50的顶面平整为平面。
具体地,所述基板10可以是铝基电路板或者是表面设置有导电线路的陶瓷基板如氧化铝基板、氧化锌基板或者硅基板等。首先,在所述基板10的表面上设置第一电连接部11和第二电连接部12。所述第一电连接部11和第二电连接部12之间相互绝缘。在本实施例中,所述第一电连接部11和所述第二电连接部12从基板10的上表面延伸到下表面,从而形成一种可表面贴装的结构。
然后,在第一电连接部11的上表面上设置所述发光二极管芯片30。所述发光二极管芯片30包括半导体发光结构(未标示)以及设置在半导体发光结构顶部的第一电极(未标示)和第二电极(未标示)。在本实施例中,所述第一电极、第二电极间隔设置在半导体发光结构远离基板10的顶面上。所述第一电极通过一导线40与第一电连接部11形成电性连接,同样,所述第二电极通过另一导线40与第二电连接部12形成电性连接。所述导线40具有良好的导电性能,通常由金属材料制成。另外,所述发光二极管芯片30的两电极并不限于上述实施例中分布于发光二极管芯片30的同一侧,其也可以位于发光二极管芯片30的相反两侧。此种情况仅需要一根导线40连接相应的电极及电连接部11、12,另外的电极及电连接部11、12可直接通过导电胶实现电连接而无需使用导线40。
接着,在基板10的相对两侧分别设置挡板70。所述挡板70与基板10共同围设出一容置部22a。通过点胶工艺形成一封装体50于所述基板10上、容置部22a内并覆盖所述发光二极管芯片30。该封装体50的材料采用硅树脂、环氧树脂或其他透明材料。在本实施例中,该封装体50内可以包含荧光转换材料,以接收发光二极管芯片30的光线后可改变发出光的光特性。其中荧光转换材料可以为石榴石(garnet)结构的化合物、硫化物(sulfide)、磷化物(phosphate)、氮化物(nitride)、氮氧化物(oxynitride)、硅酸盐类(silicate)、砷化物、硒化物或碲化物中的至少一种。在本实施例中,所述封装体50填满所述容置部22a,且在该封装体50凝固成固态后,该封装体50的顶部仍高出顶板70。
提供一工具60,利用该工具60对封装体50的顶部进行加工,将所述封装体50的顶面平整为平面。在本实施例中,该工具60为研磨工具,通过对封装体50的顶部不断研磨,将所述封装体50的顶面研磨为平面。为加工方便,所述工具60对封装体50高出挡板70的部分进行研磨,使得该封装体50的顶面与挡板70的顶面齐平。
最后,移除所述挡板70,再通过切割分离得到若干独立的发光二极管封装结构,每个独立的发光二极管封装结构至少包含一发光二极管芯片30。
综上所述,所述发光二极管封装结构的制造方法,通过工具60将封装体50的顶面平整为平面,保证了发光二极管封装结构的出光强度,进而有效提高制造发光二极管封装结构的良品率。
应该指出,上述实施方式仅为本发明的较佳实施方式,本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (10)
1.一种发光二极管封装结构的制造方法,包括以下步骤:
步骤一,提供基板;
步骤二,设置发光二极管芯片于基板上;
步骤三,在基板上形成封装体,该封装体覆盖于发光二极管芯片上;
步骤四,利用工具将封装体的顶面平整为平面。
2.如权利要求1所述的发光二极管封装结构的制造方法,其特征在于:步骤三之前还包括在所述基板上形成有反射杯,该反射杯的中央形成容置部,所述发光二极管芯片容置于该容置部内。
3.如权利要求2所述的发光二极管封装结构的制造方法,其特征在于:所述封装体填充于所述容置部内。
4.如权利要求3所述的发光二极管封装结构的制造方法,其特征在于:所述封装体填满所述容置部,且该封装体的顶部高出所述反射杯。
5.如权利要求4所述的发光二极管封装结构的制造方法,其特征在于:平整后的封装体的顶面与反射杯的顶面齐平。
6.如权利要求1所述的发光二极管封装结构的制造方法,其特征在于:在步骤三之前,还包括在所述基板两侧分别设置有挡板,所述挡板与基板共同围设成容置部,所述发光二极管芯片容置于该容置部内。
7.如权利要求6所述的发光二极管封装结构的制造方法,其特征在于:所述封装体填充于所述容置部内。
8.如权利要求7所述的发光二极管封装结构的制造方法,其特征在于:所述封装体填满所述容置部,且该封装体的顶部高出所述挡板。
9.如权利要求8所述的发光二极管封装结构的制造方法,其特征在于:平整后的封装体的顶面与挡板的顶面齐平。
10.如权利要求1-9中任一项所述的发光二极管封装结构的制造方法,其特征在于:所述步骤四为利用研磨工具将封装体的顶面研磨为平面。
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CN2011102673962A CN103000768A (zh) | 2011-09-09 | 2011-09-09 | 发光二极管封装结构的制造方法 |
TW100132923A TWI425678B (zh) | 2011-09-09 | 2011-09-14 | 發光二極體封裝結構之製造方法 |
US13/593,473 US20130065332A1 (en) | 2011-09-09 | 2012-08-23 | Method for manufacturing led with an encapsulant having a flat top face |
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CN108352434A (zh) * | 2015-11-10 | 2018-07-31 | 亿光电子工业股份有限公司 | 发光二极管装置与其制作方法 |
JP2018125477A (ja) * | 2017-02-03 | 2018-08-09 | 日本電気硝子株式会社 | パッケージ及び波長変換部材の製造方法、パッケージ、波長変換部材、発光デバイス、パッケージの母材、並びに容器の母材 |
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CN101807629A (zh) * | 2009-02-12 | 2010-08-18 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
CN201754416U (zh) * | 2010-07-09 | 2011-03-02 | 戴美惠 | 具有提升反射效率的led发光载体结构 |
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JP4073098B2 (ja) * | 1998-11-18 | 2008-04-09 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP3877454B2 (ja) * | 1998-11-27 | 2007-02-07 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2000208822A (ja) * | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
AU2001241136A1 (en) * | 2000-03-31 | 2001-10-15 | Toyoda Gosei Co. Ltd. | Method for dicing semiconductor wafer into chips |
JP2002026182A (ja) * | 2000-07-07 | 2002-01-25 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP3738176B2 (ja) * | 2000-08-03 | 2006-01-25 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6884663B2 (en) * | 2002-01-07 | 2005-04-26 | Delphon Industries, Llc | Method for reconstructing an integrated circuit package using lapping |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
KR100703217B1 (ko) * | 2006-02-22 | 2007-04-09 | 삼성전기주식회사 | 발광다이오드 패키지 제조방법 |
US20080116171A1 (en) * | 2006-11-22 | 2008-05-22 | Clarkson University | Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide |
KR100890741B1 (ko) * | 2007-03-13 | 2009-03-26 | 삼성전기주식회사 | 고출력 led 패키지 및 그 제조방법 |
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JP2012023184A (ja) * | 2010-07-14 | 2012-02-02 | Sharp Corp | 発光装置 |
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- 2011-09-14 TW TW100132923A patent/TWI425678B/zh not_active IP Right Cessation
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US6080602A (en) * | 1997-12-25 | 2000-06-27 | Sanyo Electric Co., Ltd. | Method of producing a semiconductor device using a reduced mounting area |
CN101807629A (zh) * | 2009-02-12 | 2010-08-18 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
CN201754416U (zh) * | 2010-07-09 | 2011-03-02 | 戴美惠 | 具有提升反射效率的led发光载体结构 |
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TW201312802A (zh) | 2013-03-16 |
TWI425678B (zh) | 2014-02-01 |
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