EP0333734A1 - Attachment of semiconductor die to lead frame by means of an adhesive resin - Google Patents

Attachment of semiconductor die to lead frame by means of an adhesive resin

Info

Publication number
EP0333734A1
EP0333734A1 EP87907718A EP87907718A EP0333734A1 EP 0333734 A1 EP0333734 A1 EP 0333734A1 EP 87907718 A EP87907718 A EP 87907718A EP 87907718 A EP87907718 A EP 87907718A EP 0333734 A1 EP0333734 A1 EP 0333734A1
Authority
EP
European Patent Office
Prior art keywords
adhesive
die
substrate
heating
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87907718A
Other languages
German (de)
English (en)
French (fr)
Inventor
William N. Bolster
Stanley A. Marcus
Lincoln Ying
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
M&T Chemicals Inc
Original Assignee
M&T Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by M&T Chemicals Inc filed Critical M&T Chemicals Inc
Publication of EP0333734A1 publication Critical patent/EP0333734A1/en
Withdrawn legal-status Critical Current

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    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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    • H01L23/4828Conductive organic material or pastes, e.g. conductive adhesives, inks
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    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01044Ruthenium [Ru]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01076Osmium [Os]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Definitions

  • This invention pertains to the assembly of semiconductor devices and more particularly to processes and equipment for attaching dies to lead frames using a polymer based die attach adhesive.
  • thermosonic bonding at temperatures ranging from about room temperature to about 300oC; or by
  • thermocompression bonding which is a process employing pressure in conjunction with temperatures up to about 300oC, or above.
  • the adhesives used for bonding the dies to the lead frame can be:
  • one or more pads can serve as grounds allowing current to exit through the leads.
  • thermal or non-conductive adhesives are used as the die bonding material.
  • the currently used polymer based adhesives in this art are epoxy resins and polyamic acids which are cured to polyimides. It is an object of this invention to provide an improved method for fabricating semiconductor devices.
  • Apparatus for carrying out the method above comprises:
  • (B) means for dispensing an adhesive onto said die placement areas as the substrate moves through the assembly operation
  • (E) means for selecting and depositing dies onto the heated adhesive on the substrate
  • (F) optional postheat means for optionally heating the die-adhesive substrate assembly as the substrate moves down the assembly line.
  • the substrate material of construction is not critical.
  • the substrate therefore can be a metal lead frame, a ceramic or a ceramic package, a ceramic hybrid or a like material.
  • the heating means for heating the adhesive can be any suitable heating device known to those skilled in the art, as for example, a heated platen, a stream of heated air or nitrogen, a laser beam, an infra-red lamp, and the like.
  • the post heat means is not limited to any particular means but also can be a heated platen, infra-red heating means, heated air or nitrogen, microwave or induction heaters, and the like.
  • Figure 1 is a view in perspective schematically delineating the steps of one version of the instant invention using an adhesive paste.
  • Figure 2 is also a view in perspective of another version of the invention using an adhesive ribbon.
  • the adhesive is a polymer-based composition; thus, it can be based on a thermoplastic resin as well as a curable or hardenable thermosetting resin.
  • the adhesive can be in the form of a paste, a film, a tape, a foil or a ribbon.
  • the preferred adhesive resin compositions used herein are the thermoplastic paste or ribbon resin compositions because these compositions tend to result in less residual stress on the chip or die than thermoset or curable products that undergo chemical reaction during heating.
  • Pastes are highly viscous, non-solid mixtures of solid particles dispersed in a liquid suspending medium or solvent.
  • Films, tapes, foils, and ribbons may be distinguished from pastes, rheologically, in that they are not viscous. Tapes, foils and ribbons can be supported or unsupported and can be used with release agents to preclude blocking when being unrolled from a dispenser.
  • thermoplastic resin components useful in the practice of this invention should be room temperature stable, flexible, heat activatable and heat resistant. They should not lose their rheological properties at low temperatures or embrittle with age. They preferably should be soluble in organic solvents which can be readily removed without leaving traces of solvent adhering to or complexed with the resin. They should be water resistant, exhibit excellent adhesion to metals and die, accept a high conductivity filler loading and have a low volume resistivity value.
  • thermoplastic resins include thermoplastic polyhydroxyethers (phenoxy resins) described in U.S. No. 3,177,090 and 3,395,118; polyimides described in U.S. No. 3,410,875 and 3,615,913; polyarylene polyether polysulfone resins described in U.S. No. 3,933,764 as well as polyphenylene oxides and other low stress, high temperature thermoplastic polarylate resins referred to as structural or high performance adhesive resins.
  • phenoxy resins phenoxy resins
  • polyimides described in U.S. No. 3,410,875 and 3,615,913
  • polyarylene polyether polysulfone resins described in U.S. No. 3,933,764 as well as polyphenylene oxides and other low stress, high temperature thermoplastic polarylate resins referred to as structural or high performance adhesive resins.
  • Thermoplastic resins containing alpha, beta-ethylenically unsaturated hydrocarbon groups polymerized therein which are not corrosive to metals commonly used in semiconductor packages can also be used if their second order transition temperatures are high enough to preclude shifting of dies after being adhesively bonded to a substrate.
  • halogenated vinyls such as, polyvinyl chloride, polyvinylidene chloride, vinyl chloride-alpha-olefin copolymers, acrylic or methacrylic acid copolymers, chloroprene, acrylonitrile polymers and the like are unsatisfactory.
  • thermoplastic resin used in the adhesive compositions of this invention are the siloxane-modified polyimides prepared as described in U.S. Patents No. 3,440,527, 3,575,923, 3,875,116 and 4,395,527 the teachings of which are incorporated herein by reference.
  • the adhesive paste composition comprises:
  • thermoplastic resin (a) about 5% to about 75% by weight of the thermoplastic resin and preferably 5% to 85% by weight;
  • (c) about 0% to about 50% by weight of an organic solvent and preferably 20% to 50% by weight.
  • Other additives to adjust viscosity, rheology, tack and other physical properities of the wet paste or dried adhesive can be included in the composition if desired.
  • the electrically conductive filler can be any metal used in the art, such as, silver, gold, platinum, palladium, iridium, mercury, ruthenium and osmium. Mixtures or alloys of these metals can also be used. However, the preferred metal is silver, either alone or alloyed with platinum or palladium.
  • the electrically conductive filler can also be coated on a glass or ceramic substrate to reduce cost or to modify the properties of the adhesive.
  • the thermally conductive filler can be beryllia, alumina, silica, oxides of antimony, magnesium, or zinc and the like.
  • thermosettlng resins are used as the polymer-based adhesive, one can choose from such commercially available materials as the epoxy resins, polyamic acids, maleimides and the like.
  • Suitable solvents include derivatives of monoalkyl and/or dialkyl ethers of ethylene glycol and condensed polyethylene glycols and/or cyclic ethers containing no less than a 5-member ring, such as, triethylene glycol dimethyl ether (triglyme), diethylene glycol dimethyl ether (diglyme) and ethylene glycol dimethyl ether (monoglyme); and N-methyl- 2-pyrrolidone, gamma-butryolactone, 2-(2-ethoxy) ethyl acetate (Carbitol acetate), 2-butoxyethyl acetate (butyl Cellosolve), and the like.
  • the preferred solvent is diglyme, particularly when the resin is a siloxane-modified polyimide.
  • the adhesive After evaporation of the solvent, the adhesive itself comprises about 5-50% by weight of the resin, preferably 8- 30% and 40-95% by weight of the metal, preferably 65-90%. If desired other materials can be added to the adhesive composition including rheological control agents, inert fillers, colorants and colloidal silica.
  • thermoplastic resins useful in formulating adhesive compositions can also be characterized by their second order glass transition temperatures. Such compositions should have a minimum value of 100oC and a maximum value of 285oC with a range of 150 -250oC being preferred.
  • the molecular weight (number average) of the siloxanemodified polyimide resins is in the range of about 50,000 to about 200,000.
  • thermoplastic resins have high resilience and flexibility characteristics enabling them to bond dies to lead frames in the practice of this invention without danger of stress cracking of the dies. Stress may be considered to be a function of crosslinking causing volume shrinkage which passes stress on to a chip. A creep mechanism enables thermoplastics to relax and to dissipate stress. This is a significant improvement over previously used resins, as for example epoxy resins, bis-maleimide resins, polyamic acid resins and the like, where the shrinkage which occurs upon curing also contributes to the creation of stress.
  • the application of the adhesive composition to the pre-designated areas of the lead frame can be effected by the use of a screen print, a syringe or a stamping mechanism (similar to off-set printing) where an arm picks up adhesive from a pot or reservoir and then moves to stamp the adhesive on the lead frame.
  • a screen print e.g., a syringe or a stamping mechanism (similar to off-set printing) where an arm picks up adhesive from a pot or reservoir and then moves to stamp the adhesive on the lead frame.
  • Mechanical problems, such as, voids or excess adhesive are resolved by programmed automatic dispensing techniques.
  • An unexpected advantage of the first version of the instant invention over the prior art methods is the time saving achieved by dispensing cold adhesive to a cold lead frame.
  • the heating means raises the temperature of the adhesive paste in 0.5-2.5 seconds, driving out the solvent and leaving a tacky thermoplastic adhesive spot on which the die is placed and bonded. Brief postheating may optimize solvent removal.
  • the lead frame with bonded die is then ready for the finishing steps of wire welding, encapsulation and separation into semiconduuctor packages.
  • activated is used in this invention to mean that state at which the resin in the adhesive composition functions to adhesively bond a die to a lead frame.
  • an adhesive resin paste composition containing or based on a thermoplastic resin it is the temperature at which sufficient organic solvent is removed to afford a hot thermoplastic resin with sufficient tack to exhibit adhesive properties sufficient to bond a die to a lead frame. After activation, these pastes are essentially solids. Where the solvent is diglyme, an effective activation temperature is about 200oC.
  • thermosetting resins they are activated in this invention when they are cured or crosslinked to a state where they function as adhesives for die bonding with or without the release of a solvent or vaporized liquid, such as water generated during the cure of a polyamic acid.
  • Activation temperatures can be from about 175oC to about 350oC.
  • This invention lends itself to incorporation in "jelly bean” IC techniques where the assembly lines run flat out at maximum speeds as well as hybrid and chip on board assemblies.
  • lead frame, 2 is passed as part of belt feed system, 3, in proximity to an adhesive composition dispensing means, 4, which can be screen printing, a syringe or a print stamper which deposits small premeasured portions of a polymer-based adhesive paste composition, 6, at room temperature on the paddle, 8, of lead frame, 2.
  • the lead frame containing deposited paste composition, 6, passes through optional pre-heat means, 10, and then on to heated platen, 12, where the temperature of the paste composition, 6, is quickly raised to a temperature high enough to activate the adhesive. Where the solvent is diglyme this temperature can be from about 50o to about 200oC.
  • a transfer arm from die dispensing means, 14, deposits a die, 16, on the heated paste composition, 6, adhering to lead frame paddle, 8.
  • the composite of die, 16, bonded to paddle, 8, on lead frame, 2 passes through an optional heating means, 18, or directly without optional heating means, 18, to an apppropriate collector, such as a magazine, 20, en route to the wire bond step.
  • a lead frame, 22, is rted as part of a belt feed system, 24, through an 1 heating means, 26, to a position in contact with platen, 28, where the temperature of the paddle, 30, ed rapidly to a temperature high enough to activate ticular adhesive being used.
  • this temperature will be from about 250oC to 50oC.
  • Ribbon adhesive dispensing means, 32, equipped guillotine and applicator, 34 cuts and deposits a tab sive, 35, onto heated paddle, 30.
  • Immediately thereaftransfer arm of die dispensing means, 36 places a , on the tab of heated and activated adhesive adhering le, 30.
  • the composite of die, 37, bonded to paddle, lead frame, 22, passes on belt feed system, 24, through optional heating means, 38, or by-passes optional heating means, 38, going to a collector or magazine, 40, in preparation for the wire bonding step.
  • the invention described herein is preferably carried out in a continuous manner although it may also be practiced in an intermittently if so desired.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
EP87907718A 1986-11-13 1987-11-12 Attachment of semiconductor die to lead frame by means of an adhesive resin Withdrawn EP0333734A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93060086A 1986-11-13 1986-11-13
US930600 1986-11-13

Publications (1)

Publication Number Publication Date
EP0333734A1 true EP0333734A1 (en) 1989-09-27

Family

ID=25459505

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87907718A Withdrawn EP0333734A1 (en) 1986-11-13 1987-11-12 Attachment of semiconductor die to lead frame by means of an adhesive resin

Country Status (6)

Country Link
EP (1) EP0333734A1 (ko)
JP (1) JPH01502868A (ko)
KR (1) KR910006966B1 (ko)
CN (1) CN87107692A (ko)
BR (1) BR8707876A (ko)
WO (1) WO1988003704A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111500212A (zh) * 2013-04-30 2020-08-07 日东电工株式会社 薄膜状胶粘剂、切割胶带一体型薄膜状胶粘剂以及半导体装置的制造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019535A (en) * 1989-03-28 1991-05-28 General Electric Company Die attachment method using nonconductive adhesive for use in high density interconnected assemblies
US5237206A (en) * 1989-07-21 1993-08-17 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
EP0409257A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
EP0409004A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
US5002818A (en) * 1989-09-05 1991-03-26 Hughes Aircraft Company Reworkable epoxy die-attach adhesive
DE4124053A1 (de) * 1991-07-19 1993-01-21 Siemens Ag Verfahren zum herstellen einer haftverbindung zwischen wenigstens einem bauteil und einem metallischen substrat
DE69426347T2 (de) * 1993-09-29 2001-05-17 Matsushita Electric Ind Co Ltd Verfahren zum Montieren einer Halbleiteranordnung auf einer Schaltungsplatte und eine Schaltungsplatte mit einer Halbleiteranordnung darauf
JP2000144082A (ja) * 1998-11-16 2000-05-26 Minnesota Mining & Mfg Co <3M> 熱硬化性接着剤組成物、接着剤、および接着剤の製造方法
KR100576886B1 (ko) * 2000-08-30 2006-05-03 앰코 테크놀로지 코리아 주식회사 반도체패키지의 제조 방법
JP3542080B2 (ja) 2001-03-30 2004-07-14 リンテック株式会社 半導体チップ担持用接着テープ・シート、半導体チップ担持体、半導体チップマウント方法および半導体チップ包装体
KR100819794B1 (ko) * 2002-04-02 2008-04-07 삼성테크윈 주식회사 리드프레임 및, 그것을 이용한 반도체 패키지 제조 방법
DE10240460A1 (de) 2002-08-29 2004-03-11 Infineon Technologies Ag Universelles Halbleitergehäuse mit vorvernetzten Kunststoffeinbettmassen und Verfahren zur Herstellung desselben
WO2009006284A2 (en) * 2007-06-28 2009-01-08 Sandisk Corporation Semiconductor die having a redistribution layer
DE102015107724B4 (de) * 2015-04-02 2016-12-01 Heraeus Deutschland GmbH & Co. KG Verfahren zum Herstellen einer Substratanordnung, Substratanordnung, Verfahren zum Verbinden eines Elektronikbauteils mit einer Substratanordnung und Elektronikbauteil

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029628A (en) * 1974-05-22 1977-06-14 The United States Of America As Represented By The Secretary Of The Navy Bonding material for planar electronic device
JPS5211154A (en) * 1975-07-17 1977-01-27 Shoei Chemical Ind Co Electrode material for wire welding
EP0051165A1 (en) * 1980-11-03 1982-05-12 BURROUGHS CORPORATION (a Michigan corporation) Repairable IC package with thermoplastic chip attach
JPS57152135A (en) * 1981-03-13 1982-09-20 Yamagata Nippon Denki Kk Manufacture of semiconductor device
EP0065686A3 (en) * 1981-05-21 1984-10-10 General Electric Company Power device module
JPS59931A (ja) * 1982-06-25 1984-01-06 Mitsubishi Electric Corp 半導体素子のマウント方法
JPS6045030A (ja) * 1983-08-23 1985-03-11 Hitachi Chem Co Ltd 半導体装置の製造法
JPS6066440A (ja) * 1983-09-21 1985-04-16 Fujitsu Ltd 半導体装置の製造方法
JPS6110246A (ja) * 1984-06-26 1986-01-17 Hitachi Chem Co Ltd 半導体装置の製造法
JPS61164233A (ja) * 1985-01-17 1986-07-24 Oki Electric Ind Co Ltd ダイボンデイング方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO8803704A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111500212A (zh) * 2013-04-30 2020-08-07 日东电工株式会社 薄膜状胶粘剂、切割胶带一体型薄膜状胶粘剂以及半导体装置的制造方法

Also Published As

Publication number Publication date
BR8707876A (pt) 1990-03-01
WO1988003704A1 (en) 1988-05-19
CN87107692A (zh) 1988-05-25
KR890700267A (ko) 1989-03-10
JPH01502868A (ja) 1989-09-28
KR910006966B1 (ko) 1991-09-14

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