WO1988003704A1 - Attachment of semiconductor die to lead frame by means of an adhesive resin - Google Patents
Attachment of semiconductor die to lead frame by means of an adhesive resin Download PDFInfo
- Publication number
- WO1988003704A1 WO1988003704A1 PCT/US1987/002952 US8702952W WO8803704A1 WO 1988003704 A1 WO1988003704 A1 WO 1988003704A1 US 8702952 W US8702952 W US 8702952W WO 8803704 A1 WO8803704 A1 WO 8803704A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adhesive
- die
- substrate
- heating
- lead frame
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 12
- 239000004840 adhesive resin Substances 0.000 title abstract description 7
- 229920006223 adhesive resin Polymers 0.000 title abstract description 7
- 239000000853 adhesive Substances 0.000 claims abstract description 88
- 230000001070 adhesive effect Effects 0.000 claims abstract description 88
- 239000000203 mixture Substances 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 45
- 238000010438 heat treatment Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 31
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 229920005992 thermoplastic resin Polymers 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 11
- 229920001169 thermoplastic Polymers 0.000 claims description 10
- 239000011231 conductive filler Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical group O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 4
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- 239000004332 silver Substances 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
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- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical group COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 3
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- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
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- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 2
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- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- NAMDIHYPBYVYAP-UHFFFAOYSA-N 1-methoxy-2-(2-methoxyethoxy)ethane Chemical compound COCCOCCOC.COCCOCCOC NAMDIHYPBYVYAP-UHFFFAOYSA-N 0.000 description 1
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- -1 2-(2-ethoxy) ethyl Chemical group 0.000 description 1
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- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
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- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29364—Palladium [Pd] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29369—Platinum [Pt] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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Definitions
- This invention pertains to the assembly of semiconductor devices and more particularly to processes and equipment for attaching dies to lead frames using a polymer based die attach adhesive.
- thermosonic bonding at temperatures ranging from about room temperature to about 300oC; or by
- thermocompression bonding which is a process employing pressure in conjunction with temperatures up to about 300oC, or above.
- the adhesives used for bonding the dies to the lead frame can be:
- one or more pads can serve as grounds allowing current to exit through the leads.
- thermal or non-conductive adhesives are used as the die bonding material.
- the currently used polymer based adhesives in this art are epoxy resins and polyamic acids which are cured to polyimides. It is an object of this invention to provide an improved method for fabricating semiconductor devices.
- Apparatus for carrying out the method above comprises:
- (B) means for dispensing an adhesive onto said die placement areas as the substrate moves through the assembly operation
- (E) means for selecting and depositing dies onto the heated adhesive on the substrate
- (F) optional postheat means for optionally heating the die-adhesive substrate assembly as the substrate moves down the assembly line.
- the substrate material of construction is not critical.
- the substrate therefore can be a metal lead frame, a ceramic or a ceramic package, a ceramic hybrid or a like material.
- the heating means for heating the adhesive can be any suitable heating device known to those skilled in the art, as for example, a heated platen, a stream of heated air or nitrogen, a laser beam, an infra-red lamp, and the like.
- the post heat means is not limited to any particular means but also can be a heated platen, infra-red heating means, heated air or nitrogen, microwave or induction heaters, and the like.
- Figure 1 is a view in perspective schematically delineating the steps of one version of the instant invention using an adhesive paste.
- Figure 2 is also a view in perspective of another version of the invention using an adhesive ribbon.
- the adhesive is a polymer-based composition; thus, it can be based on a thermoplastic resin as well as a curable or hardenable thermosetting resin.
- the adhesive can be in the form of a paste, a film, a tape, a foil or a ribbon.
- the preferred adhesive resin compositions used herein are the thermoplastic paste or ribbon resin compositions because these compositions tend to result in less residual stress on the chip or die than thermoset or curable products that undergo chemical reaction during heating.
- Pastes are highly viscous, non-solid mixtures of solid particles dispersed in a liquid suspending medium or solvent.
- Films, tapes, foils, and ribbons may be distinguished from pastes, rheologically, in that they are not viscous. Tapes, foils and ribbons can be supported or unsupported and can be used with release agents to preclude blocking when being unrolled from a dispenser.
- thermoplastic resin components useful in the practice of this invention should be room temperature stable, flexible, heat activatable and heat resistant. They should not lose their rheological properties at low temperatures or embrittle with age. They preferably should be soluble in organic solvents which can be readily removed without leaving traces of solvent adhering to or complexed with the resin. They should be water resistant, exhibit excellent adhesion to metals and die, accept a high conductivity filler loading and have a low volume resistivity value.
- thermoplastic resins include thermoplastic polyhydroxyethers (phenoxy resins) described in U.S. No. 3,177,090 and 3,395,118; polyimides described in U.S. No. 3,410,875 and 3,615,913; polyarylene polyether polysulfone resins described in U.S. No. 3,933,764 as well as polyphenylene oxides and other low stress, high temperature thermoplastic polarylate resins referred to as structural or high performance adhesive resins.
- phenoxy resins phenoxy resins
- polyimides described in U.S. No. 3,410,875 and 3,615,913
- polyarylene polyether polysulfone resins described in U.S. No. 3,933,764 as well as polyphenylene oxides and other low stress, high temperature thermoplastic polarylate resins referred to as structural or high performance adhesive resins.
- Thermoplastic resins containing alpha, beta-ethylenically unsaturated hydrocarbon groups polymerized therein which are not corrosive to metals commonly used in semiconductor packages can also be used if their second order transition temperatures are high enough to preclude shifting of dies after being adhesively bonded to a substrate.
- halogenated vinyls such as, polyvinyl chloride, polyvinylidene chloride, vinyl chloride-alpha-olefin copolymers, acrylic or methacrylic acid copolymers, chloroprene, acrylonitrile polymers and the like are unsatisfactory.
- thermoplastic resin used in the adhesive compositions of this invention are the siloxane-modified polyimides prepared as described in U.S. Patents No. 3,440,527, 3,575,923, 3,875,116 and 4,395,527 the teachings of which are incorporated herein by reference.
- the adhesive paste composition comprises:
- thermoplastic resin (a) about 5% to about 75% by weight of the thermoplastic resin and preferably 5% to 85% by weight;
- (c) about 0% to about 50% by weight of an organic solvent and preferably 20% to 50% by weight.
- Other additives to adjust viscosity, rheology, tack and other physical properities of the wet paste or dried adhesive can be included in the composition if desired.
- the electrically conductive filler can be any metal used in the art, such as, silver, gold, platinum, palladium, iridium, mercury, ruthenium and osmium. Mixtures or alloys of these metals can also be used. However, the preferred metal is silver, either alone or alloyed with platinum or palladium.
- the electrically conductive filler can also be coated on a glass or ceramic substrate to reduce cost or to modify the properties of the adhesive.
- the thermally conductive filler can be beryllia, alumina, silica, oxides of antimony, magnesium, or zinc and the like.
- thermosettlng resins are used as the polymer-based adhesive, one can choose from such commercially available materials as the epoxy resins, polyamic acids, maleimides and the like.
- Suitable solvents include derivatives of monoalkyl and/or dialkyl ethers of ethylene glycol and condensed polyethylene glycols and/or cyclic ethers containing no less than a 5-member ring, such as, triethylene glycol dimethyl ether (triglyme), diethylene glycol dimethyl ether (diglyme) and ethylene glycol dimethyl ether (monoglyme); and N-methyl- 2-pyrrolidone, gamma-butryolactone, 2-(2-ethoxy) ethyl acetate (Carbitol acetate), 2-butoxyethyl acetate (butyl Cellosolve), and the like.
- the preferred solvent is diglyme, particularly when the resin is a siloxane-modified polyimide.
- the adhesive After evaporation of the solvent, the adhesive itself comprises about 5-50% by weight of the resin, preferably 8- 30% and 40-95% by weight of the metal, preferably 65-90%. If desired other materials can be added to the adhesive composition including rheological control agents, inert fillers, colorants and colloidal silica.
- thermoplastic resins useful in formulating adhesive compositions can also be characterized by their second order glass transition temperatures. Such compositions should have a minimum value of 100oC and a maximum value of 285oC with a range of 150 -250oC being preferred.
- the molecular weight (number average) of the siloxanemodified polyimide resins is in the range of about 50,000 to about 200,000.
- thermoplastic resins have high resilience and flexibility characteristics enabling them to bond dies to lead frames in the practice of this invention without danger of stress cracking of the dies. Stress may be considered to be a function of crosslinking causing volume shrinkage which passes stress on to a chip. A creep mechanism enables thermoplastics to relax and to dissipate stress. This is a significant improvement over previously used resins, as for example epoxy resins, bis-maleimide resins, polyamic acid resins and the like, where the shrinkage which occurs upon curing also contributes to the creation of stress.
- the application of the adhesive composition to the pre-designated areas of the lead frame can be effected by the use of a screen print, a syringe or a stamping mechanism (similar to off-set printing) where an arm picks up adhesive from a pot or reservoir and then moves to stamp the adhesive on the lead frame.
- a screen print e.g., a syringe or a stamping mechanism (similar to off-set printing) where an arm picks up adhesive from a pot or reservoir and then moves to stamp the adhesive on the lead frame.
- Mechanical problems, such as, voids or excess adhesive are resolved by programmed automatic dispensing techniques.
- An unexpected advantage of the first version of the instant invention over the prior art methods is the time saving achieved by dispensing cold adhesive to a cold lead frame.
- the heating means raises the temperature of the adhesive paste in 0.5-2.5 seconds, driving out the solvent and leaving a tacky thermoplastic adhesive spot on which the die is placed and bonded. Brief postheating may optimize solvent removal.
- the lead frame with bonded die is then ready for the finishing steps of wire welding, encapsulation and separation into semiconduuctor packages.
- activated is used in this invention to mean that state at which the resin in the adhesive composition functions to adhesively bond a die to a lead frame.
- an adhesive resin paste composition containing or based on a thermoplastic resin it is the temperature at which sufficient organic solvent is removed to afford a hot thermoplastic resin with sufficient tack to exhibit adhesive properties sufficient to bond a die to a lead frame. After activation, these pastes are essentially solids. Where the solvent is diglyme, an effective activation temperature is about 200oC.
- thermosetting resins they are activated in this invention when they are cured or crosslinked to a state where they function as adhesives for die bonding with or without the release of a solvent or vaporized liquid, such as water generated during the cure of a polyamic acid.
- Activation temperatures can be from about 175oC to about 350oC.
- This invention lends itself to incorporation in "jelly bean” IC techniques where the assembly lines run flat out at maximum speeds as well as hybrid and chip on board assemblies.
- lead frame, 2 is passed as part of belt feed system, 3, in proximity to an adhesive composition dispensing means, 4, which can be screen printing, a syringe or a print stamper which deposits small premeasured portions of a polymer-based adhesive paste composition, 6, at room temperature on the paddle, 8, of lead frame, 2.
- the lead frame containing deposited paste composition, 6, passes through optional pre-heat means, 10, and then on to heated platen, 12, where the temperature of the paste composition, 6, is quickly raised to a temperature high enough to activate the adhesive. Where the solvent is diglyme this temperature can be from about 50o to about 200oC.
- a transfer arm from die dispensing means, 14, deposits a die, 16, on the heated paste composition, 6, adhering to lead frame paddle, 8.
- the composite of die, 16, bonded to paddle, 8, on lead frame, 2 passes through an optional heating means, 18, or directly without optional heating means, 18, to an apppropriate collector, such as a magazine, 20, en route to the wire bond step.
- a lead frame, 22, is rted as part of a belt feed system, 24, through an 1 heating means, 26, to a position in contact with platen, 28, where the temperature of the paddle, 30, ed rapidly to a temperature high enough to activate ticular adhesive being used.
- this temperature will be from about 250oC to 50oC.
- Ribbon adhesive dispensing means, 32, equipped guillotine and applicator, 34 cuts and deposits a tab sive, 35, onto heated paddle, 30.
- Immediately thereaftransfer arm of die dispensing means, 36 places a , on the tab of heated and activated adhesive adhering le, 30.
- the composite of die, 37, bonded to paddle, lead frame, 22, passes on belt feed system, 24, through optional heating means, 38, or by-passes optional heating means, 38, going to a collector or magazine, 40, in preparation for the wire bonding step.
- the invention described herein is preferably carried out in a continuous manner although it may also be practiced in an intermittently if so desired.
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Abstract
Semiconductor packages are fabricated by first depositing an adhesive resin (6) composition on the paddle (8) of a lead frame (2), activating the adhesive resin by rapidly raising its temperature and then depositing a die (16) on the activated adhesive. Conventional wire bonding and encapsulating steps follow to afford the semiconductor package.
Description
Attachment of semiconductor die to lead-frame by means of an adhesive resin.
FIELD OF THE INVENTION This invention pertains to the assembly of semiconductor devices and more particularly to processes and equipment for attaching dies to lead frames using a polymer based die attach adhesive.
BACKGROUND OF THE INVENTION
Assembly-stage processing involving polymer-based hybrid circuits, chip-on-board and other semiconductor devices employ the following general process sequence:
(1) dispensing an adhesive to a substrate (for example, a lead frame) where the adhesive and substrate are at room temperature,
(2) placing the die onto the adhesive,
(3) baking the assembly at 135ºC to 250ºC to cure the adhesive,
(4) bonding the wires between the die and points on the substrate to effect electrical contact therebetween, and
(5) encapsulating the die (for example, molding it in epoxy) to complete the package.
Fine gold, gold alloy or aluminum wires are welded to the die pads and leads by:
(1) thermosonic bonding at temperatures ranging from about room temperature to about 300ºC; or by
(2) thermocompression bonding which is a process employing pressure in conjunction with temperatures up to about 300ºC, or above.
As with any line operation, the speed of fabrication and the space required for each separate step are of the essence.
The adhesives used for bonding the dies to the lead frame can be:
(1) electrically conductive
(2) thermally conductive, or
(3) non-conductive
If the design of the semiconductor package uses the back of the die as a ground, an electrically conductive adhesive is needed to enable current to exit from the lead frame.
Alternatively one or more pads can serve as grounds allowing current to exit through the leads. In the latter case thermal or non-conductive adhesives are used as the die bonding material.
The currently used polymer based adhesives in this art are epoxy resins and polyamic acids which are cured to polyimides.
It is an object of this invention to provide an improved method for fabricating semiconductor devices.
It is another object to provide a method which eliminates one or more fabricating steps.
It is still another object to provide a method which shortens the total time required to fabricate a semiconductor device.
It is also an object of this invention to provide equipment or apparatus for carrying out the improved method.
Other objects will become apparent to those skilled in the art upon a further reading of the specification.
SUMMARY OF THE INVENTION A method has been discovered for improving the fabrication of semiconductor devices which comprises the steps of:
(a) depositing a bonding amount of a polymer-based adhesive composition onto a substrate;
(b) thereafter heating the adhesive composition to activate the adhesive; and
(c) contacting the adhesive with a die, whereby the die is attached to the substrate.
This method lends itself well to attaching a die to a lead frame by:
(1) depositing a bonding amount of a polymer-based adhesive composition on a pre-determined area of a lead frame;
(2) raising the temperature of the polymer-based adhesive composition to a level where said adhesive is activated;
(3) contacting a die containing at least one bond pad with said activated adhesive; and
(4) subsequently, completing the assembly by wire bonding and encapsulation.
Apparatus for carrying out the method above comprises:
(A) transport means for carrying a substrate, such as a lead frame, having distinct die placement areas such as paddles, through a moving in-line assembly operation;
(B) means for dispensing an adhesive onto said die placement areas as the substrate moves through the assembly operation;
(C) optional preheat means for optionally heating the moving substrate;
(D) heating means for heating the adhesive on the substrate;
(E) means for selecting and depositing dies onto the heated adhesive on the substrate; and
(F) optional postheat means for optionally heating the die-adhesive substrate assembly as the substrate moves down the assembly line.
The substrate material of construction is not critical. The substrate therefore can be a metal lead frame, a ceramic or a ceramic package, a ceramic hybrid or a like material.
The heating means for heating the adhesive can be any suitable heating device known to those skilled in the art, as for example, a heated platen, a stream of heated air or nitrogen, a laser beam, an infra-red lamp, and the like. Similarly the post heat means is not limited to any particular means but also can be a heated platen, infra-red heating means, heated air or nitrogen, microwave or induction heaters, and the like.
DESCRIPTION OF THE INVENTION
Figure 1 is a view in perspective schematically delineating the steps of one version of the instant invention using an adhesive paste.
Figure 2 is also a view in perspective of another version of the invention using an adhesive ribbon.
In line equipment useful for the practice of conventional assembly stage processing is commercially available and is known to those skilled in the art. Such equipment can be modified to implement the present invention.
In the practice of this invention, the adhesive is a polymer-based composition; thus, it can be based on a thermoplastic resin as well as a curable or hardenable thermosetting resin. The adhesive can be in the form of a paste, a film, a tape, a foil or a ribbon.
The preferred adhesive resin compositions used herein are the thermoplastic paste or ribbon resin compositions because these compositions tend to result in less residual stress on the chip or die than thermoset or curable products
that undergo chemical reaction during heating.
Pastes are highly viscous, non-solid mixtures of solid particles dispersed in a liquid suspending medium or solvent.
Films, tapes, foils, and ribbons may be distinguished from pastes, rheologically, in that they are not viscous. Tapes, foils and ribbons can be supported or unsupported and can be used with release agents to preclude blocking when being unrolled from a dispenser.
The thermoplastic resin components useful in the practice of this invention should be room temperature stable, flexible, heat activatable and heat resistant. They should not lose their rheological properties at low temperatures or embrittle with age. They preferably should be soluble in organic solvents which can be readily removed without leaving traces of solvent adhering to or complexed with the resin. They should be water resistant, exhibit excellent adhesion to metals and die, accept a high conductivity filler loading and have a low volume resistivity value.
Suitable thermoplastic resins include thermoplastic polyhydroxyethers (phenoxy resins) described in U.S. No. 3,177,090 and 3,395,118; polyimides described in U.S. No. 3,410,875 and 3,615,913; polyarylene polyether polysulfone resins described in U.S. No. 3,933,764 as well as polyphenylene oxides and other low stress, high temperature thermoplastic polarylate resins referred to as structural or high performance adhesive resins.
Thermoplastic resins containing alpha, beta-ethylenically unsaturated hydrocarbon groups polymerized therein which are not corrosive to metals commonly used in semiconductor packages can also be used if their second order transition temperatures are high enough to preclude shifting of dies after being adhesively bonded to a substrate.
Because corrosion is a highly critical factor in semiconductor packages, many commonly used thermoplastic resins cannot be utilized. For example, halogenated vinyls, such as, polyvinyl chloride, polyvinylidene chloride, vinyl chloride-alpha-olefin copolymers, acrylic or methacrylic acid copolymers, chloroprene, acrylonitrile polymers and the like are unsatisfactory.
Preferred as the thermoplastic resin used in the adhesive compositions of this invention are the siloxane-modified polyimides prepared as described in U.S. Patents No. 3,440,527, 3,575,923, 3,875,116 and 4,395,527 the teachings of which are incorporated herein by reference.
The adhesive paste composition comprises:
(a) about 5% to about 75% by weight of the thermoplastic resin and preferably 5% to 85% by weight;
(b) about 25% to about 95% by weight of a thermally or electrically conductive filler and preferably 5% to 75% by weight; and
(c) about 0% to about 50% by weight of an organic solvent and preferably 20% to 50% by weight.
Other additives to adjust viscosity, rheology, tack and other physical properities of the wet paste or dried adhesive can be included in the composition if desired.
The electrically conductive filler can be any metal used in the art, such as, silver, gold, platinum, palladium, iridium, mercury, ruthenium and osmium. Mixtures or alloys of these metals can also be used. However, the preferred metal is silver, either alone or alloyed with platinum or palladium. The electrically conductive filler can also be coated on a glass or ceramic substrate to reduce cost or to modify the properties of the adhesive.
The thermally conductive filler can be beryllia, alumina, silica, oxides of antimony, magnesium, or zinc and the like.
If it is desired to use thermosettlng resins as the polymer-based adhesive, one can choose from such commercially available materials as the epoxy resins, polyamic acids, maleimides and the like.
The organic solvents used in these adhesive compositions should dissolve the resins and be volatile enough so that they can be removed easily wihout adhering to the resins. Suitable solvents include derivatives of monoalkyl and/or dialkyl ethers of ethylene glycol and condensed polyethylene glycols and/or cyclic ethers containing no less than a 5-member ring, such as, triethylene glycol dimethyl ether (triglyme), diethylene glycol dimethyl ether (diglyme)
and ethylene glycol dimethyl ether (monoglyme); and N-methyl- 2-pyrrolidone, gamma-butryolactone, 2-(2-ethoxy) ethyl acetate (Carbitol acetate), 2-butoxyethyl acetate (butyl Cellosolve), and the like. The preferred solvent is diglyme, particularly when the resin is a siloxane-modified polyimide. After evaporation of the solvent, the adhesive itself comprises about 5-50% by weight of the resin, preferably 8- 30% and 40-95% by weight of the metal, preferably 65-90%. If desired other materials can be added to the adhesive composition including rheological control agents, inert fillers, colorants and colloidal silica.
The thermoplastic resins useful in formulating adhesive compositions can also be characterized by their second order glass transition temperatures. Such compositions should have a minimum value of 100ºC and a maximum value of 285ºC with a range of 150 -250ºC being preferred.
The molecular weight (number average) of the siloxanemodified polyimide resins is in the range of about 50,000 to about 200,000.
These thermoplastic resins have high resilience and flexibility characteristics enabling them to bond dies to lead frames in the practice of this invention without danger of stress cracking of the dies. Stress may be considered to be a function of crosslinking causing volume shrinkage which passes stress on to a chip. A creep mechanism enables thermoplastics to relax and to dissipate stress. This is a significant improvement over previously used resins, as for example epoxy resins, bis-maleimide resins, polyamic acid
resins and the like, where the shrinkage which occurs upon curing also contributes to the creation of stress.
The application of the adhesive composition to the pre-designated areas of the lead frame can be effected by the use of a screen print, a syringe or a stamping mechanism (similar to off-set printing) where an arm picks up adhesive from a pot or reservoir and then moves to stamp the adhesive on the lead frame. Mechanical problems, such as, voids or excess adhesive are resolved by programmed automatic dispensing techniques.
An unexpected advantage of the first version of the instant invention over the prior art methods is the time saving achieved by dispensing cold adhesive to a cold lead frame. The heating means raises the temperature of the adhesive paste in 0.5-2.5 seconds, driving out the solvent and leaving a tacky thermoplastic adhesive spot on which the die is placed and bonded. Brief postheating may optimize solvent removal. The lead frame with bonded die is then ready for the finishing steps of wire welding, encapsulation and separation into semiconduuctor packages.
The term "activated" is used in this invention to mean that state at which the resin in the adhesive composition functions to adhesively bond a die to a lead frame. Thus, in the case of an adhesive resin paste composition containing or based on a thermoplastic resin, it is the temperature at which sufficient organic solvent is removed to afford a hot thermoplastic resin with sufficient tack to exhibit adhesive
properties sufficient to bond a die to a lead frame. After activation, these pastes are essentially solids. Where the solvent is diglyme, an effective activation temperature is about 200ºC.
In the case of thermosetting resins, they are activated in this invention when they are cured or crosslinked to a state where they function as adhesives for die bonding with or without the release of a solvent or vaporized liquid, such as water generated during the cure of a polyamic acid. Activation temperatures can be from about 175ºC to about 350ºC.
The above definitions apply to ribbon adhesives as well whether they are based on thermoplastic or thermosetting resins.
This invention lends itself to incorporation in "jelly bean" IC techniques where the assembly lines run flat out at maximum speeds as well as hybrid and chip on board assemblies.
The invention is further described in the examples that follow. All parts and percentages are by weight unless otherwise specified.
EXAMPLE 1
Referring to Figure 1, lead frame, 2, is passed as part of belt feed system, 3, in proximity to an adhesive composition dispensing means, 4, which can be screen printing, a syringe or a print stamper which deposits small premeasured portions of a polymer-based adhesive paste composition, 6, at room temperature on the paddle, 8, of lead frame, 2. The lead frame containing deposited paste composition, 6, passes through optional pre-heat means, 10, and then on to heated platen, 12, where the temperature of the paste composition, 6, is quickly raised to a temperature high enough to activate the adhesive. Where the solvent is diglyme this temperature can be from about 50º to about 200ºC. At this point, a transfer arm from die dispensing means, 14, deposits a die, 16, on the heated paste composition, 6, adhering to lead frame paddle, 8. The composite of die, 16, bonded to paddle, 8, on lead frame, 2, passes through an optional heating means, 18, or directly without optional heating means, 18, to an apppropriate collector, such as a magazine, 20, en route to the wire bond step.
The die shear strengths of the die bonds obtained by using a filled thermoplastic polyimide composition (described in U.S. Patent 4,395,527 which is incorporated herein by reference) with this method are shown below and exceed those required by the specification MIL-STD-883C.
TEST VALVE
Initial die shear strength, kg 8.0
Die shear after 1,000 hours @ 150ºC. 5.0
Die shear after 250 hours pressure pot (121ºC, 15 psig) 7.5
Die shear after 1,000 hours ( 85ºC/85/ R.H.) 6.0
The thermal properties of the die bonds obtained by this method are presented below.
TEST VALUE
Thermogravimetric Analysis in air @ 400ºC, % weight loss. 3.8 Loss after 16 hours @ 250ºC in air 2.5
Residual stress on IC, meters >15
ASTM Thermal Conductivity, in BTU/hr-ft2 (º F/ft) 0.47 Maximum wire bond Temp., º C 225
The electrical properties of the resultant die bonds are given below.
TEST VALUE
Resistivity, ohm-cm as baked 9.0 x 10-5 ,000 hours @ 150º C 8.3 x 10-5
50 hours e pot(121ºC, 15 psig) 9.0 x 10-5
,000 hours % R.H. 9.0 x 10-5
EXAMPLE 2
With reference to Figure 2, a lead frame, 22, is rted as part of a belt feed system, 24, through an 1 heating means, 26, to a position in contact with platen, 28, where the temperature of the paddle, 30, ed rapidly to a temperature high enough to activate ticular adhesive being used. For a thermoplastic resin dhesive, this temperature will be from about 250ºC to 50ºC. Ribbon adhesive dispensing means, 32, equipped guillotine and applicator, 34, cuts and deposits a tab sive, 35, onto heated paddle, 30. Immediately thereaftransfer arm of die dispensing means, 36, places a , on the tab of heated and activated adhesive adhering le, 30. The composite of die, 37, bonded to paddle,
lead frame, 22, passes on belt feed system, 24,
through optional heating means, 38, or by-passes optional heating means, 38, going to a collector or magazine, 40, in preparation for the wire bonding step.
The invention described herein is preferably carried out in a continuous manner although it may also be practiced in an intermittently if so desired.
Although the invention has been described in its preferred forms with a certain degree of particularity, it is understood that the present disclosure has been made only by way of example and that numerous changes can be made without departing from the spirit and the scope of this invention.
Claims
1. A method of attaching a die to a substrate which comprises the steps of:
(a) depositing a bonding amount of a polymer-based adhesive composition onto a substrate;
(b) thereafter heating the adhesive composition to activate the adhesive; and
(c) contacting the activated adhesive with a die, whereby the die is attached to the substrate.
2. Method claimed in claim 1 in which the adhesive composition is in the form of a paste.
3. Method claimed in claim 2 in which the adhesive composition is heated to a temperature of about 175ºC to about 350ºC.
4. Method claimed in claim 3 in which the adhesive paste comprises a thermosetting polymer composition.
5. Method claimed in claim 4 in which the adhesive paste composition-thermosetting polymer composition comprises an epoxy or a maleimide resin.
6. Method claimed in claim 2 in which the adhesive paste comprises a thermoplastic polymer composition.
7. Method claimed in claim 6 in which the adhesive paste thermoplastic polymer is a thermoplastic polyimide.
8. Method claimed in claims 6 or 7 in which the adhesive paste is heated from about 50ºC to about 200ºC to effect activation.
9. Method claimed in claim 1 in which the adhesive composition is in the form of a film or ribbon.
10. Method claimed in claim 9 in which the adhesive composition is heated to a temperature of from about 175ºC to about 350ºC.
11. Method claimed in claim 1 in which the substrate comprises a metal lead frame.
12. Method claimed in claim 1 in which the substrate comprises a ceramic.
13. Method claimed in claim 12 in which the substrate comprises a ceramic hybrid substrate.
14. Method claimed in claim 12 in which the substrate comprises a ceramic package.
15. Method claimed in claim 1 in which the substrate comprises a circuit board.
16. Method claimed in clam 2 in which the composition comprises:
5-75% of resin 25-95% of filler 0-50% of solvent
17. Method claimed in claim 6 in which the composition comprises:
5-85% of thermoplastic resin 25-75% of filler 20-50% of solvent
18. Method claimed in claim 17 in which the filler comprises an electrically conductive filler.
19. Method claimed in claim 18 in which the electrically conductive filler is a metal selected from the class consisting of silver, gold, platinum, iridium, mercury, ruthenium, osmium and mixtures or alloys thereof.
20. Method claimed in claim 17 in which the filler comprises a thermally conductive filler.
21. Method claimed in claim 20 in which the thermally conductive filler is beryllia.
22. Method claimed in claim 20 in which the thermally conductive filler is alumina.
23. Method claimed in claim 1 in which the assembly of substrate, adhesive and die is further heated.
24. Method claimed in claim 1 in which the method is carried out in a continuous manner.
25. A method for attaching a die to a metal lead frame which comprises:
(a) depositing a bonding amount of a thermoplastic polymer-based adhesive composition in paste form on the paddle area of the lead frame;
(b) thereafter heating the adhesive composition to a temperature of about 50ºC to about 200ºC to activate the adhesive; (c) placing a die onto the activated adhesive; and
(d) optionally further heating the assembly of lead frame, adhesive and die, whereby the die is bonded to the lead frame.
26. Method claimed in claim 25 in which the method is carried out in a continuous manner.
27. A method for attaching a die to a metal lead frame which comprises:
(a) depositing a bonding amount of thermoplastic polymer-based adhesive composition in ribbon or film form on the paddle area of a lead frame;
(b) thereafter heating the adhesive composition to about 250ºC-350ºC to activate the adhesive;
(c) placing a die onto the activated adhesive; and
(d) optionally further heating the assembly of lead frame, adhesive and die, whereby the die is bonded to the lead frame.
28. Method claimed in claim 27 in which the method is carried out in a continuous manner.
29. An apparatus for attaching a die to a substrate with a polymer-based adhesive which comprises:
(a) transport means for moving a substrate through the apparatus;
(b) optional means for heating the substrate prior to dispensing the adhesive;
(c) means for dispensing the adhesive composition onto a selected area of the substrate;
(d) heating means for heating the adhesive prior to placement of the die;
(e) means for selecting and placing a die onto the heated adhesive; and
(f) optional means for postheating the assembly of substrate, adhesive and die.
30. The apparatus claimed in claim 29 in which the adhesive is in paste form.
31. The apparatus claimed in claim 29 in which the adhesive is in film or ribbon form.
32. The apparatus claimed in claim 29 in which the heating means for heating the adhesive comprises a heated platen.
33. The apparatus claimed in claim 29 in which the heating means for heating the adhesive comprises a stream of heated air.
34. The apparatus claimed in claim 29 in which the heating means for heating the adhesive comprises a laser.
35. The apparatus claimed in claim 29 in which the heating means, for heating the adhesive comprises an infra-red lamp.
36. The apparatus claimed in claim 29 in which the post heat means comprises one or more heated platens.
37. The apparatus claimed in claim 29 in which the post heat means comprises infra-red heating means.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BR8707876A BR8707876A (en) | 1986-11-13 | 1987-11-12 | SEMICONDUCTOR DEVICES MANUFACTURING PROCESS |
KR1019880700809A KR910006966B1 (en) | 1986-11-13 | 1987-11-12 | Attachement of semiconductor die to lead frame by means of an adhesive resing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93060086A | 1986-11-13 | 1986-11-13 | |
US930,600 | 1986-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1988003704A1 true WO1988003704A1 (en) | 1988-05-19 |
Family
ID=25459505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1987/002952 WO1988003704A1 (en) | 1986-11-13 | 1987-11-12 | Attachment of semiconductor die to lead frame by means of an adhesive resin |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0333734A1 (en) |
JP (1) | JPH01502868A (en) |
KR (1) | KR910006966B1 (en) |
CN (1) | CN87107692A (en) |
BR (1) | BR8707876A (en) |
WO (1) | WO1988003704A1 (en) |
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EP0645805A2 (en) * | 1993-09-29 | 1995-03-29 | Matsushita Electric Industrial Co., Ltd. | Method for mounting a semiconductor device on a circuit board, and a circuit board with a semiconductor device mounted thereon |
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JP2000144082A (en) * | 1998-11-16 | 2000-05-26 | Minnesota Mining & Mfg Co <3M> | Thermosetting adhesive composition, adhesive and preparation of adhesive |
KR100576886B1 (en) * | 2000-08-30 | 2006-05-03 | 앰코 테크놀로지 코리아 주식회사 | Manufacturing method of semiconductor package |
KR100819794B1 (en) * | 2002-04-02 | 2008-04-07 | 삼성테크윈 주식회사 | Lead-frame and method for manufacturing semi-conductor package using such |
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JP6033734B2 (en) * | 2013-04-30 | 2016-11-30 | 日東電工株式会社 | Film adhesive, dicing tape integrated film adhesive, and method for manufacturing semiconductor device |
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1987
- 1987-11-06 CN CN198787107692A patent/CN87107692A/en active Pending
- 1987-11-12 BR BR8707876A patent/BR8707876A/en unknown
- 1987-11-12 JP JP62507154A patent/JPH01502868A/en active Pending
- 1987-11-12 EP EP87907718A patent/EP0333734A1/en not_active Withdrawn
- 1987-11-12 KR KR1019880700809A patent/KR910006966B1/en active IP Right Grant
- 1987-11-12 WO PCT/US1987/002952 patent/WO1988003704A1/en not_active Application Discontinuation
Patent Citations (4)
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US4029628A (en) * | 1974-05-22 | 1977-06-14 | The United States Of America As Represented By The Secretary Of The Navy | Bonding material for planar electronic device |
EP0051165A1 (en) * | 1980-11-03 | 1982-05-12 | BURROUGHS CORPORATION (a Michigan corporation) | Repairable IC package with thermoplastic chip attach |
JPS59931A (en) * | 1982-06-25 | 1984-01-06 | Mitsubishi Electric Corp | Method for mounting of semiconductor element |
JPS6045030A (en) * | 1983-08-23 | 1985-03-11 | Hitachi Chem Co Ltd | Manufacture of semiconductor device |
Non-Patent Citations (2)
Title |
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Patent Abstracts of Japan, volume 8, no. 81 (E-238)(1518), 13 April 1984 & JP-A-59 000931 (MITSUBISHI DENKI K.K.) 6 January 1984 * |
Patent Abstracts of Japan, volume 9, no. 173 (E-329)(1896), 18 July 1985 & JP-A-60 045030 (HITACHI KASEI KOGYO K.K.) 11 March 1985 * |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0461316A1 (en) * | 1989-03-28 | 1991-12-18 | General Electric Company | Die attachment |
EP0409257A2 (en) * | 1989-07-21 | 1991-01-23 | Kabushiki Kaisha Toshiba | Low-melting point glass sealed semiconductor device and method of manufacturing the same |
EP0409004A2 (en) * | 1989-07-21 | 1991-01-23 | Kabushiki Kaisha Toshiba | Low-melting point glass sealed semiconductor device and method of manufacturing the same |
EP0409257A3 (en) * | 1989-07-21 | 1991-04-03 | Kabushiki Kaisha Toshiba | Low-melting point glass sealed semiconductor device and method of manufacturing the same |
EP0409004A3 (en) * | 1989-07-21 | 1991-04-03 | Kabushiki Kaisha Toshiba | Low-melting point glass sealed semiconductor device and method of manufacturing the same |
US5237206A (en) * | 1989-07-21 | 1993-08-17 | Kabushiki Kaisha Toshiba | Low-melting point glass sealed semiconductor device and method of manufacturing the same |
WO1991003835A1 (en) * | 1989-09-05 | 1991-03-21 | Hughes Aircraft Company | Reworkable epoxy die-attach adhesive |
WO1993002538A1 (en) * | 1991-07-19 | 1993-02-04 | Mannesmann Ag | Process for making an adhesive joint between at least one component and a metallic substrate |
EP0645805A2 (en) * | 1993-09-29 | 1995-03-29 | Matsushita Electric Industrial Co., Ltd. | Method for mounting a semiconductor device on a circuit board, and a circuit board with a semiconductor device mounted thereon |
EP0645805A3 (en) * | 1993-09-29 | 1995-04-12 | Matsushita Electric Ind Co Ltd | |
US5651179A (en) * | 1993-09-29 | 1997-07-29 | Matsushita Electric Industrial Co., Ltd. | Method for mounting a semiconductor device on a circuit board |
US5670826A (en) * | 1993-09-29 | 1997-09-23 | Matsushita Electric Industrial Co., Ltd. | Method for mounting a semiconductor device on a circuit board using a conductive adhesive and a thermosetting resin, and a circuit board with a semiconductor device mounted thereon using the method |
EP1246236A1 (en) * | 2001-03-30 | 2002-10-02 | Lintec Corporation | Semiconductor chip carrying adhesive tape/sheet, semiconductor chip carrier, semiconductor chip mounting method and semiconductor chip packaging body |
US6753614B2 (en) | 2001-03-30 | 2004-06-22 | Lintec Corporation | Semiconductor chip carrying adhesive tape/sheet, semiconductor chip carrier, and semiconductor chip packaging body |
US6924211B2 (en) | 2001-03-30 | 2005-08-02 | Lintec Corporation | Semiconductor chip carrying adhesive tape/sheet, semiconductor chip carrier, semiconductor chip mounting method and semiconductor chip packaging body |
US7517722B2 (en) | 2002-08-29 | 2009-04-14 | Infineon Technologies Ag | Method of producing a universal semiconductor housing with precrosslinked plastic embedding compounds |
Also Published As
Publication number | Publication date |
---|---|
EP0333734A1 (en) | 1989-09-27 |
JPH01502868A (en) | 1989-09-28 |
CN87107692A (en) | 1988-05-25 |
KR910006966B1 (en) | 1991-09-14 |
BR8707876A (en) | 1990-03-01 |
KR890700267A (en) | 1989-03-10 |
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