JPH01502868A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPH01502868A
JPH01502868A JP62507154A JP50715487A JPH01502868A JP H01502868 A JPH01502868 A JP H01502868A JP 62507154 A JP62507154 A JP 62507154A JP 50715487 A JP50715487 A JP 50715487A JP H01502868 A JPH01502868 A JP H01502868A
Authority
JP
Japan
Prior art keywords
adhesive
die
heating
substrate
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62507154A
Other languages
Japanese (ja)
Inventor
ボルスター，ウィリアム　エヌ
マーカス，スタンレイ　エイ
イン，リンカーン
Original Assignee
エム　アンド　ティ　ケミカルズ，インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エム　アンド　ティ　ケミカルズ，インコーポレーテッド filed Critical エム　アンド　ティ　ケミカルズ，インコーポレーテッド
Publication of JPH01502868A publication Critical patent/JPH01502868A/en
Pending legal-status Critical Current

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Classifications

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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  • Adhesives Or Adhesive Processes (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 半導体装置の製造方法 発明の分野 本発明は半導体装置の組み立てに関し、特にポリマ基ダイ、（ｄ　ｉ　ｅ）取付 接着剤を使用するダイのり一ドフレームへの取付方法及び装置に関する。[Detailed description of the invention] Manufacturing method of semiconductor device field of invention TECHNICAL FIELD The present invention relates to the assembly of semiconductor devices, and particularly to polymer-based die, (die) mounting. The present invention relates to a method and apparatus for attaching a die to a frame using an adhesive.

発明の背景 ポリマ基ハイブリッド回路、チップ−オン−ボード、その他の半導体装置などを 含む組立てステージ処理は、以下に示す一般的な処理順序を採用している。Background of the invention Polymer-based hybrid circuits, chip-on-board, and other semiconductor devices, etc. The assembly stage processing involved employs the general processing order shown below.

（１）サブストレート（例えばリードフレーム）に接着剤をディスペンスするが 、ここで接着剤とサブストレートとは室温にあり、 （２）接着剤の上にダイを置き、 （３）接着剤を硬化させる為に組立体を１３５℃ないし２５０℃でベーキングし 、 （４）ダイとサブストレート上の点との間の電気的接続を行うためにこれらの間 をワイアでボンディングし、更に、 （５）パッケージを完成するためにダイを外囲に納める（たとえばエポキシの中 にモールドして）。(1) Dispensing adhesive onto the substrate (e.g. lead frame) , where the adhesive and substrate are at room temperature, (2) Place the die on the adhesive, (3) Bake the assembly at 135℃ to 250℃ to harden the adhesive. , (4) between the die and a point on the substrate to make an electrical connection between them; Bonded with wire, and further, (5) Encasing the die to complete the package (e.g. in epoxy) molded into).

金の細線、金合金又はアルミニウムワイアをダイパッドとリードに、以下の様に して溶接する、（１）はぼ室温から約３００℃の間の温度での熱ソニック（ｔｈ ｅｒｖｏｓｏｎｌｃ）ボンディングニヨツテ、又ハ、（２）３００℃までの、或 いはそれ以上の温度と共に圧力を使用しての方法である熱圧接（ｔｈｅｒｍｏｃ ｏｉｐｒｅｓｓｉｏｎ）ポンディングによって。Use fine gold wire, gold alloy or aluminum wire as the die pad and leads as shown below. (1) Thermal sonic (th (2) up to 300℃, or Thermocompression welding is a method that uses pressure in conjunction with higher temperatures. oipression) by pounding.

どのライン工程においても、製造速度と各工程に必要なスペースとが重要問題で ある。In any line process, production speed and the space required for each process are important issues. be.

ダイをリードフレームに接着する接着剤としては、（１）電気伝導的である、 （２）熱的に伝導的である、 （３）非伝導的である、 ものであり得る。The adhesive for bonding the die to the lead frame must be (1) electrically conductive; (2) thermally conductive; (3) non-conductive; It can be something.

半導体のパッケージの設計が、ダイの裏を接地として使用している時には、リー ドフレームから電流が出ることが出来る様にするために電気的に導電性の接着剤 が必要となる。When a semiconductor package design uses the back of the die as a ground, the lead electrically conductive adhesive to allow current to flow out of the frame Is required.

或いは、一つ又はそれ以上のパッドが接地の作用が可能で、リードを介して電流 を流し得るようにする事も出来る。この場合、熱的又は非伝導的接着剤をダイボ ンディング剤として使用する。Alternatively, one or more pads can act as a ground and conduct current through the leads. It can also be made to flow. In this case, the thermal or non-conductive adhesive is Used as a loading agent.

この技術において現在使用されるポリマ基接着剤はエポキシ樹脂とポリイミドに 硬化されるポリアミン酸（ｐｏｌｙａａｉｃ　ａｃｉｄ）とである。The polymer-based adhesives currently used in this technology are epoxy resins and polyimides. and polyamic acid that is cured.

半導体装置を製造する改良方法を提供する事が本発明の目的である。It is an object of the present invention to provide an improved method of manufacturing semiconductor devices.

一つ又はそれ以上の製造工程を省略する方法を提供する事が別の目的である。It is another object to provide a method that eliminates one or more manufacturing steps.

半導体装置を製造するのに必要な全時間を短縮する方法を提供する事が更に別の 目的である。It is a further object to provide a method for reducing the overall time required to manufacture semiconductor devices. It is a purpose.

この改良方法を実施する設備乃至装置を提供する事もまた本発明の目的である。It is also an object of the invention to provide equipment for carrying out this improved method.

その他の目的は本明細書を更に読むことによって当業者には明らかになるであろ う。Other objects will become apparent to those skilled in the art upon further reading of this specification. cormorant.

発明の要約 方法は以下の工程を有する半導体装置の製造を改良することによりて発見された 。　。Summary of the invention The method was discovered by improving the manufacturing of semiconductor devices with the following steps: . .

（ａ）サブストレートの上にポリマ基接着剤組成物のボンディング量を置く、 （ｂ）次に接着剤組成物を活性化するために加熱する、そして、 （Ｃ）接着剤にダイを接触させて、それによってダイをサブストレートに取付け る。(a) placing a bonding amount of a polymer-based adhesive composition on the substrate; (b) then heating the adhesive composition to activate it; and (C) Contacting the die with the adhesive, thereby attaching the die to the substrate. Ru.

この方法はダイをリードフレームに取り付けるのに以下の様にする事により十分 に役立つものである、即ち、（１）ボンディング量のポリマ基接着剤組成物をリ ードフレームの所定の領域に置き、 （２）ポリマ基接着剤組成物の温度を前記接着物が活性化されるレベルにまで上 昇させ、 （３）少なくとも一つのボンドパッドを有するダイを前記活性化接着剤に接触さ せ、 （４）次に、ワイアポンディングとパッケージングとを行って組み立てを完了す る。This method is sufficient to attach the die to the lead frame as follows: (1) Reconciling the bonding amount of the polymer-based adhesive composition. in the designated area of the card frame. (2) increasing the temperature of the polymer-based adhesive composition to a level at which said adhesive is activated; let it rise, (3) contacting the die with at least one bond pad to the activated adhesive; height, (4) Next, perform wire bonding and packaging to complete the assembly. Ru.

上述の方法を実施するための装置は、以下のものを含んでいる、即ち、 （Ａ）リードフレームの様な、パドルの様な個々のダイ接地場所を有するサブス トレートを移動インライン組み立て工程に沿って移動させる移送装置と、（Ｂ） サブストレートが組み立て工程に沿って移動するときに前記ダイ接地場所上に接 着剤をディスペンスする装置と、 （Ｃ）必要に応じて移動サブストレートを加熱する必要に応じての予熱装置と、 （Ｄ）サブストレート上の接着剤を加熱する装置と、（Ｅ）サブストレート上の 加熱接着剤上にダイを選択、設置する装置と、更に、 （Ｆ）サブストレートが組み立てラインを流れ下る時にダイ−接着剤−サブスト レート組立物を必要に応じて後加熱する必要に応じての後加熱装置。The apparatus for carrying out the method described above includes: (A) Substrates with individual die grounding locations, such as paddles, such as lead frames. (B) a transfer device for moving the tray along the moving inline assembly process; The substrate contacts the die ground location as it moves along the assembly process. a device for dispensing adhesive; (C) an optional preheating device for heating the moving substrate as needed; (D) a device for heating the adhesive on the substrate; and (E) a device for heating the adhesive on the substrate; a device for selecting and placing a die on the hot adhesive; (F) Die-adhesive-substrate as the substrate flows down the assembly line. Optional post-heating device for post-heating the rate assembly as required.

構成するサブストレート材料は限定的なものではない。The constituent substrate material is not limited.

その目的のサブストレートは金属リードフレームでも、セラミック乃至セラミッ クパッケージでも、セラミックハイブリッド等の材料でも良い。The substrate for this purpose may be a metal lead frame or a ceramic or ceramic lead frame. It may be a package or a material such as a ceramic hybrid.

接着剤加熱用の加熱装置は、例えば、加熱したプラテン（ｐｌａｔｅｎ）、加熱 した空気または窒素の流れ、レーザービーム、赤外線電球、などの様な当業者に 公知の任意適当な加熱装置で良い。同様に、後加熱装置は特別な装置に限定され るものではなく、やはり、加熱プラテン、赤外線加熱装置、加熱空気ないし窒素 、マイクロ波又はインダクションヒータ、など、でよい。Heating devices for heating the adhesive include, for example, a heated platen, a heated For those skilled in the art, such as air or nitrogen flows, laser beams, infrared light bulbs, etc. Any known suitable heating device may be used. Similarly, post-heating equipment is limited to special equipment. It is not a heating platen, an infrared heating device, heated air or nitrogen. , microwave or induction heater, etc.

本発明の説明 第１図は、接着剤ペーストを使用する本発明の１方法の工程を略示する斜視図で ある。Description of the invention FIG. 1 is a perspective view schematically illustrating the steps of one method of the invention using adhesive paste; be.

第２図も又、接着剤リボンを使用する本発明の別の実施例の斜視図である。FIG. 2 is also a perspective view of another embodiment of the invention using an adhesive ribbon.

通常の組立工程処理の実施のために有用なインライン設備は市販されており、当 業者の周知のところである。Useful in-line equipment for performing normal assembly process processes is commercially available; This is well known to business operators.

この種の設備は本発明の実施の為に変形可能である。This type of equipment can be modified to implement the invention.

本発明の実施に当たっては、接着剤はポリマ基組成物であり、即ち、熱可塑性樹 脂でも、硬化可能な熱硬化樹脂でも良い。接着剤はペースト、フィルム、テープ 、フォイル乃至リボンのどの形式でも良い。In the practice of this invention, the adhesive is a polymer-based composition, i.e., a thermoplastic resin. It may be a resin or a curable thermosetting resin. Adhesives include paste, film, and tape , foil or ribbon.

ここで使用される好ましい接着剤樹脂組成物は、加熱中に化学反応を生じる熱硬 化性製品に比較してチップ乃至ダイに残留歪が少ない事からして、熱可塑性ペー スト乃至リボン樹脂組成物である。Preferred adhesive resin compositions used herein are thermosets that undergo a chemical reaction during heating. Thermoplastic paper has less residual strain on the chip or die compared to thermoplastic products. It is a strip or ribbon resin composition.

ペーストは液体懸濁媒体乃至溶媒内に分散された固体粒子の高粘度な非固体混合 物である。A paste is a highly viscous, non-solid mixture of solid particles dispersed in a liquid suspending medium or solvent. It is a thing.

フィルム、テープ、フォイル及びリボンはペーストとは、レオロジカルには、こ れらが粘性的ではないと言う事で区別される。テープ、フォイル、及びリボンは 支持されでもされなくてもよく、ディスペンサがら巻き戻されたときに塊になる のを防止する為に離型剤を使用することができる。Films, tapes, foils and ribbons are rheologically defined as pastes. They are distinguished by the fact that they are not viscous. Tapes, foils, and ribbons May be supported or unsupported, clumping when unwound from dispenser A mold release agent can be used to prevent this.

本発明の実施のために有−用な熱可塑性樹脂組成物は室温安定性があり、フレキ シブルで、熱活性化可能で、耐熱性のものでなければならない。低温でそのレオ ロジカルな性質を失ってはならず、時と共に脆化してはならない・好ましくは樹 脂に付着して又はこれと化合して溶媒の跡を残すことなしに容易に除去可能な有 機溶媒に溶解可能であるべきである。これらは又、耐水性で、金属及びダイに優 秀な接着性を示し、高伝導性のフィシの混入が可能で、更に低体積変化率を有す るべきである。Thermoplastic resin compositions useful in the practice of this invention are room temperature stable and flexible. It must be flexible, heat activatable and heat resistant. Its leo at low temperature Must not lose its logical properties or become brittle over time - preferably wood-based Compounds that adhere to or combine with fats and can be easily removed without leaving traces of solvent. It should be soluble in the organic solvent. They are also water resistant and superior to metal and die. It exhibits excellent adhesion, can be mixed with highly conductive fissures, and has a low volume change rate. Should.

好ましい熱可塑性樹脂には、米国特許第３，１７７゜０９０号及び第３，３９５ ，１１８号に記載のポリヒドロキシエーテル（フェノキシ樹脂）、米国特許第３ ，４１０．８７５号及び第３．６１５．９１３号に記載のポリイミド、米国特許 第３９３３．７６４号記載のポリアリレンポリエーテルポリスルフォン樹脂、乃 至、構造材的ないし高パーフォーマンス接着樹脂とされるポリフェニレンオキサ イドその他の低歪力、高温熱可塑性ポリアリル（ｐｏｌｙａｒｙｌａｔｅ）樹脂 、が含まれる。Preferred thermoplastic resins include U.S. Pat. , 118, U.S. Patent No. 3 , 410.875 and 3.615.913, U.S. Pat. Polyarylene polyether polysulfone resin described in No. 3933.764, Polyphenylene oxa, which is used as a structural material or high-performance adhesive resin. Other low strain, high temperature thermoplastic polyarylate resins , is included.

その中でポリメライズされたアルファ、ベーターエチレン的に不飽和な炭化水素 基を含み、半導体パッケージの中に普通含有される金属に対して腐食を及ぼさな い熱可塑性樹脂は、その第２次遷移温度が十分に高くてサブストレートに十分に 接着された後にダイに移動を起こさせないならば、これも使用可能である。alpha, beta ethylenically unsaturated hydrocarbons polymerized therein It does not corrode metals commonly contained in semiconductor packages, including A thermoplastic resin whose secondary transition temperature is sufficiently high that it is suitable for substrates This can also be used if the die does not move after being bonded.

半導体パッケージにおいては、腐食は最も悪い要因なので、多くの普通に使用さ れる熱可塑性樹脂は使用できない。例えば、ハロゲン化ビニル、例えばポリ塩化 ビニル、ポリ塩化ビリニデン、塩化とニル−アルファーオレフィン・コポリマ、 アクリル又はメタアクリル酸コポリマ、クロロブレン、アクリロニトリル・ポリ マ等は不満足なものである。Corrosion is the worst factor in semiconductor packaging, so many commonly used Thermoplastic resins cannot be used. For example, vinyl halides, e.g. polychloride vinyl, polyvinidene chloride, chloride and nyl-alpha olefin copolymers, Acrylic or methacrylic copolymers, chlorobrene, acrylonitrile poly Ma etc. are unsatisfactory.

本発明の接着剤組成物として使用される熱可塑性樹脂の好ましい例は、米国特許 第３，４４０，５２７号、第３．５７５，９２３号、第３．８７５．１１６号、 及び第４，３９５．５２７号の記載によって製造されたシロキサン−モディファ イド−ポリイミドであるが、これらの明細書の教示はこの中に参考文献として採 用されている。Preferred examples of thermoplastic resins used as adhesive compositions of the present invention include U.S. Pat. No. 3,440,527, No. 3.575,923, No. 3.875.116, and siloxane modifiers prepared as described in No. 4,395.527. The teachings of these specifications are incorporated herein by reference. It is used.

接着剤ペースト組成物は以下のものを有する、（ａ）約５重量％乃至約７５重量 ％、好ましくは５重量％乃至８５重量％の熱可塑性樹脂、 （ｂ）約２５重量％乃至約９５重量％好ましくは５重量％乃至７５重量％の熱的 又は電気的伝導性フィシ、（ｃ）約０重量％乃至約５０重量％好ましくは２０重 量％乃至５０重量％の有機溶媒。The adhesive paste composition has: (a) from about 5% to about 75% by weight; %, preferably from 5% to 85% by weight of thermoplastic resin, (b) about 25% to about 95% by weight, preferably 5% to 75% thermal or electrically conductive fiber, (c) from about 0% to about 50% by weight, preferably 20% by weight. % to 50% by weight of organic solvent.

粘度、レオロジー、タック（ｔａｃｋ）、その他の液体を含むペースト又は液体 を含まない接着剤の物理的特性を調節するためのその他の添加物を所望に応じて この組成物に含めてもよい。Pastes or liquids containing viscosity, rheology, tack, and other liquids Contains no other additives as desired to adjust the physical properties of the adhesive may be included in this composition.

電気導電性フィシはこの分野において使用されるどの金属、例えば、銀、金、白 金、パラジウム、イリジウム、水銀、ルテニウム、及びオスミウム、であってよ い。これらの金属の混合物乃至合金も又使用可能である。しかし、推奨される金 属は銀で、単独ででも白金又はパラジウムと合金にされていてもよい。電気伝導 性フィシは又、価格低減乃至接着性を変化させるために、ガラス又はセラミック サブストレートに被覆されても良い。Electrically conductive fibers can be made of any metal used in this field, such as silver, gold, white May be gold, palladium, iridium, mercury, ruthenium, and osmium. stomach. Mixtures or alloys of these metals can also be used. However, the recommended gold The genus is silver, which may be alone or alloyed with platinum or palladium. electrical conduction Fibers can also be made of glass or ceramic to reduce cost or change adhesion. The substrate may also be coated.

熱伝導性フィシはベリリア、アルミナ、シリカ、アンチモン、マグネシウム又は 亜鉛の酸化物などで良い。Thermal conductive fibers are beryllia, alumina, silica, antimony, magnesium or Zinc oxide etc. are good.

ポリマ基接着剤として熱硬化性樹脂を所望する場合は、エポキシ樹脂、ポリアミ ン酸、マレイミド等を使用する事ができる。If a thermosetting resin is desired as a polymer-based adhesive, epoxy resin, polyamide phosphoric acid, maleimide, etc. can be used.

これらの接着剤組成物に使用される有機溶媒は、樹脂を溶解し、樹脂に付着する ことなしに容易に除去可能なように十分な揮発性がなければならない。好ましい 溶媒のうちには、エチレングリコール及び濃縮ポリエチレングリコールのモノア ルキル及び／又はジアルキルエーテル、及び／又は５メンバー環より少なくない ものを含む環状エーテル、例えばトリエチレングリコールジメチルエーテル（ト リグリーム）、ジエチレングリコールジメチルエーテル（ジグリーム）及びエチ レングリコールジメチルエーテル（モノグリーム）：及びＮ−メチル−２−ピロ リドン、ガンマーブトリオラクトン、２−　（２−エトキシ）エチルアセテート （酢酸カルピトール）、２−ブトキシルアセテート（ブチルセロソルブ）、など 、を含む。好ましい溶媒は、特に樹脂がシロキサン変性ポリイミドの場合、ジグ リームである。溶媒を蒸発させた後、接着剤自体は、重量比５−５０％、好まし くは８乃至３０％の樹脂と、重量比４０−９５％、好ましくは６５−９５％の金 属とからなる。The organic solvents used in these adhesive compositions dissolve and adhere to the resin. It must be sufficiently volatile so that it can be easily removed without damage. preferable Among the solvents, monoamines of ethylene glycol and concentrated polyethylene glycol are included. alkyl and/or dialkyl ethers, and/or not less than a 5-member ring cyclic ethers, such as triethylene glycol dimethyl ether (triethylene glycol dimethyl ether) (digreme), diethylene glycol dimethyl ether (digleme) and ethyl Ren glycol dimethyl ether (monoglyme): and N-methyl-2-pyro Lydone, gamma butriolactone, 2-(2-ethoxy)ethyl acetate (carpitol acetate), 2-butoxylacetate (butyl cellosolve), etc. ,including. Preferred solvents are suitable for jigging, especially when the resin is a siloxane-modified polyimide. It's ream. After evaporating the solvent, the adhesive itself has a weight ratio of 5-50%, preferably preferably 8-30% resin and 40-95% gold by weight, preferably 65-95% gold. It consists of the genus.

所望ならば、レオロジカル制御剤、不活性フィシ、着色剤、及びコロイド状シリ カ等を接着剤組成物に加えることもできる。Rheological control agents, inert fibres, colorants, and colloidal silica, if desired. Mosquitoes and the like can also be added to the adhesive composition.

接着剤組成物を形成するのに有用な熱可塑性樹脂は、その２次ガラス遷移温度で 特徴付けられる。この種の組成物は最低値１００℃、最高値２８５℃の値、好ま しくハ１５０−２５０℃、を有するべきである。Thermoplastic resins useful in forming adhesive compositions have a temperature at their secondary glass transition temperature of characterized. This type of composition has a minimum value of 100°C and a maximum value of 285°C, which is preferred. The temperature should preferably be 150-250°C.

シロキサン変性ポリイミド樹脂の分子量（平均値）は約５０，０００乃至約２０ ０，０００の間である−これらの熱可塑性樹脂は、高い弾性と可とう性を有し、 ダイの歪力による破壊の危険なしに本発明の実施に当たってダイのリードフレー ムへの接着を可能とする。歪力はチップに歪みをもたらす体積収縮の原因である 交さ結合（ｃｒｏｓｓ　Ｉ　ｉｎｋｉｎｇ）によるものと考えられる。クリープ 機構が熱可塑性樹脂をして歪力を緩め、消耗することを可能としている。これは 従来から使用されている樹脂、例えばエポキシ樹脂、とスーマレイミド樹脂、ポ リアミン樹脂、などに対して重要な改良を成すものであるが、これらの従来使用 樹脂は、硬化によって生じる収縮が歪力の発生に寄与しているものである。The molecular weight (average value) of the siloxane-modified polyimide resin is about 50,000 to about 20 0,000 - these thermoplastics have high elasticity and flexibility, The die leadflare can be easily removed in the practice of the invention without risk of failure due to die strain forces. This allows for adhesion to other materials. Strain force is the cause of volumetric contraction that causes distortion in the chip This is thought to be due to cross I inking. creep The mechanism uses thermoplastic resin to relieve strain and allow wear and tear. this is Traditionally used resins, such as epoxy resins, sumaleimide resins, and polymers, This is an important improvement over the conventionally used In resin, shrinkage caused by curing contributes to the generation of strain force.

リードフレームの所定の領域への接着剤組成物の塗布は、スクリーン印刷、アー ムがポット又は容器から接着剤を取り出して次に接着剤をリードフレームにスタ ンプするために移動するスポイト又はスタンプ機構（オフセット印刷に類似）を 使用して行われる。例えば、無駄な、或いは余分な接着剤、と言う様な機械的な 問題はプログラム化した自動ディスペンシング技術によって解決される。Application of the adhesive composition to predetermined areas of the lead frame can be done by screen printing, art The system removes the adhesive from the pot or container and then stamps the adhesive onto the lead frame. a dropper or stamp mechanism that moves to print (similar to offset printing) done using. For example, mechanical damage such as wasted or excess adhesive. The problem is solved by programmed automatic dispensing technology.

従来方法に対して本発明の第１実施例の有する予期しなかった長所は、冷たい接 着剤を冷たいリードフレームにディスペンスする事によって達成された時間の節 約である。加熱装置は接着剤ペーストを０．５−２．５秒で温度を上げ、溶媒を 駆逐してその上にダイを設置して接着する粘性のある熱可塑性接着剤スポットを 残す。短い予熱が溶媒の除去を良好ならしめる。接着ダイを有するリードフレー ムはこれで、ワイア溶接、外囲取付、及び半導体パッケージへの分離、と言った 仕上げ工程への準備が完了している。An unexpected advantage of the first embodiment of the present invention over conventional methods is that cold contact Time savings achieved by dispensing adhesive onto a cold lead frame It is about. The heating device raises the temperature of the adhesive paste in 0.5-2.5 seconds and removes the solvent. A spot of viscous thermoplastic adhesive is removed and a die is placed on top of it to bond it. leave. A short preheating allows for better solvent removal. lead frame with adhesive die The process now includes wire welding, enclosure mounting, and separation into semiconductor packages. Preparation for finishing process is complete.

「活性化」という言葉は、本発明において、接着剤組成物中の樹脂がダイをリー ドフレームに接着的にボンドするように作用する状態にあることを意味する。即 ち、熱可塑性樹脂を含有しまたはこれを基礎とする接着剤樹脂ペースト組成物の 場合、これは、十分に有機溶媒が除去されて高温熱可塑性樹脂が十分な粘性を持 ちダイをリードフレームにボンドするのに十分な接着性を見せる温度である。活 性化後、これらのペーストは事実上固体である。溶媒がジグリームのとき、有効 な活性化温度は約２００℃である。The term "activation" refers to the term "activation" used in the present invention when the resin in the adhesive composition leads the die. means in a state in which it acts to adhesively bond to the frame. Immediately In other words, adhesive resin paste compositions containing or based on thermoplastic resins. If the organic solvent has been removed sufficiently, the high temperature thermoplastic has sufficient viscosity. This is the temperature at which the die exhibits sufficient adhesion to bond to the lead frame. life After sexualization, these pastes are virtually solid. Effective when the solvent is diglyme A typical activation temperature is about 200°C.

熱硬化性樹脂の場合、これらは本発明においてはこれらが、溶媒又は気化した液 体の放出例えばポリアミン酸の硬化中に発生する水の、ありまたはなしでダイボ ンディングの為の接着剤として機能する状態に硬化又はクロスリンクされた時活 性化されている。活性化温度は約１７５℃から約３５０℃の間である。In the case of thermosetting resins, these are used in the present invention as solvents or vaporized liquids. Daibo with or without body release e.g. water generated during curing of polyamic acid When cured or cross-linked to a state that acts as an adhesive for bonding It's sexualized. The activation temperature is between about 175°C and about 350°C.

上述の定義は、熱可塑性樹脂であろうが熱硬化性樹脂であろうがリボン接着剤で あっても同様に適用可能である。The above definition applies to ribbon adhesives, whether thermoplastic or thermosetting. It is equally applicable even if there is.

本発明は、組み立てラインが最高速で流れる「ジェリービーンズＪＩＣ技術にも 、ハイブリッド乃至チップオンボード組み立てにも適応可能である。The present invention also applies to ``Jelly Beans JIC technology'' where the assembly line runs at maximum speed. It is also applicable to hybrid or chip-on-board assembly.

本発明は更に、以下の例示において説明する。全ての部分及び百分率は他に断り が無い限り重量で示す。The invention is further illustrated in the following examples. All parts and percentages are not otherwise stated. Unless otherwise specified, weight is shown.

例、１６ 第１図を参照すると、リードフレーム２は、ベルト供給システム３の一部として 接着剤組成物ディスペンス装置４の近くを通過するがこの装置４は、リードフレ ーム２のパドル８上に室温でポリマ基接着剤ペースト組成物６の少量の予め測定 された量をディスペンスするスクリーン印刷でも、スポイト乃至印刷スタンバで も良い。ディスペンスされたペースト組成物６を有するリードフレームは、所望 による予熱装置１０を通過し、次に加熱プラテン上を通過するが、ここでペース ト組成物６の温度は接着剤を活性化するのに十分な高い温度に急激に上昇される 。溶媒がジグリームの場合、この温度は約５０℃乃至約２００℃で良い。この点 においてダイディスペンス装置１４からのトランスファアームがダイ１６を加熱 ペースト組成物６の上に供給し、リードフレームバドル８に接着する。リードフ レーム２の上のバドル８にボンドされたダイ複合物１６は、所望による加熱装置 １８を通過するか、或いは、直接に所望加熱装置１８なしに、適当なコレクタ、 例えばマガジン２０に集められて、ワイアボンド工程に向かう。Example, 16 Referring to FIG. 1, the lead frame 2 is installed as part of a belt feeding system 3. It passes close to an adhesive composition dispensing device 4 which is connected to a lead frame. Pre-measure a small amount of polymer-based adhesive paste composition 6 at room temperature onto paddle 8 of room 2 Even in screen printing, which dispenses the amount of Also good. The leadframe with the dispensed paste composition 6 has the desired passes through a preheating device 10, then over a heating platen, where the pace The temperature of composition 6 is rapidly raised to a temperature high enough to activate the adhesive. . If the solvent is diglyme, this temperature may be from about 50°C to about 200°C. This point The transfer arm from die dispensing device 14 heats die 16 at Apply on top of the paste composition 6 and adhere to the lead frame paddle 8. Leadoff Die composite 16 bonded to paddle 8 on frame 2 is provided with an optional heating device. 18 or directly without the desired heating device 18, a suitable collector, For example, they are collected in a magazine 20 and sent to the wire bonding process.

充填熱可塑性ポリイミド組成物（米国特許第４，３９５．５２７号に記載のもの 、この特許明細書は参考文献としてここに引用されている）を使用して本方法に よって得られたダイボンドの剪断強度を下表に示すが、これはＭＩ　Ｌ−ＳＴＤ −８８３Ｃに要求される値を越えるものである。Filled thermoplastic polyimide compositions (as described in U.S. Pat. No. 4,395.527) , this patent specification is hereby incorporated by reference). The shear strength of the die bond thus obtained is shown in the table below, which is MI L-STD. This exceeds the value required for -883C.

試験項目　値 初期グイ剪断強度、ｋｇ　８．Ｏ ｉ、ｏｏｏ時間後のダイ剪断強度、１５０℃で　５．０加圧ポツト（１２１℃、 １５　ｐｓｇ）　２５０時間後のグイ剪断強度　７．５ １．０００時間後のグイ剪断強度（８５℃、相対湿度８５）６．０ この方法で得られたダイボンドの熱特性を次表に示す。Test item value Initial shear strength, kg 8. O i, die shear strength after ooo hours, 5.0 pressure pot at 150°C (121°C, 15 psg) Gui shear strength after 250 hours 7.5 Gui shear strength after 1.000 hours (85°C, relative humidity 85) 6.0 The thermal properties of the die bond obtained by this method are shown in the following table.

試験項目　値 ４００℃の空気中での熱重量分析、％重量損失３．８ 空気中２５０℃１６時間後の損失　２．５ＩＣ上での残留歪、メートル　〉１５ ＡＳＴＭ熱伝導率、ＢＴＵ／ｈｒ−ｒｔ２（”　Ｆ　／　ｆ　ｔ　）０．４７ 最大ワイアボンド温度、℃　２２５ 得られたダイボンドの電気的特性は下表の通り。Test item value Thermogravimetric analysis in air at 400°C, % weight loss 3.8 Loss after 16 hours at 250°C in air 2.5 Residual strain on IC, meters 15 ASTM thermal conductivity, BTU/hr-rt2 ("F/ft) 0.47 Maximum wire bond temperature, °C 225 The electrical properties of the obtained die bond are shown in the table below.

試験項目　値 容積抵抗、オーム−ｃｍ　ベークしたまま、９．０Ｘ１０−５ １５０℃１０００時間後　８．３Ｘ１０’−５２５０時間後、圧力ポット（１２ １”ｃ　１４ｐｓｇ）９．０Ｘ１０−５ ８５℃８５％相対湿度で１０００時間後　９．０Ｘ１０”−５例６２゜ 第２図を参照する々、リードフレーム２２は、所望による加熱装置２６を通りで 加熱プラテン２８に接触する位置にベルト供給システムの一部として搬送される が、を活性化するのに十分なほど急激に上昇されている。熱可塑性樹脂を基礎と する接着剤に対しては、この温度は約２５０℃乃至約３５０℃である。リボン接 着剤ディスペンス装置３２は、ギロチンとアプリケータ３４を有するが、接着剤 のタブ３５を切断して加熱されたパドル３０の上に置く。その直後に、ダイディ スペンス装置３６のトランスファアームがダイ３７を加熱され、パドル３０に接 着されている活性化接着剤のタブの上に置く。Test item value Volume resistance, ohm-cm, as baked, 9.0X10-5 After 1000 hours at 150℃ 8.3X10'-5250 hours, pressure pot (12 1”c 14psg) 9.0X10-5 After 1000 hours at 85°C and 85% relative humidity 9.0X10” - 5 cases 62° Referring to FIG. 2, the lead frame 22 can be passed through an optional heating device 26. conveyed as part of a belt feeding system into position in contact with heated platen 28 has been raised rapidly enough to activate the. Based on thermoplastic resin For adhesives such as 250°C to 350°C. Ribbon connection The adhesive dispensing device 32 has a guillotine and an applicator 34, but the adhesive Cut the tab 35 and place it on the heated paddle 30. Immediately after that, Daidi The transfer arm of the Spence device 36 heats the die 37 and contacts the paddle 30. Place it on top of the activated adhesive tab that has been applied.

リードフレーム２２の上のパドル３０にボンドされているダイ複合体３７、ベル ト供給システム２４の上で所望の加熱装置３８を通過するか、或いは加熱装置３ ８をバイパスして、ワイアボンディング工程のための準備へのコレクタ又はマガ ジン４０へ行く。Die complex 37 bonded to paddle 30 on lead frame 22, bell the desired heating device 38 over the supply system 24 or heating device 3 8 and bypass the collector or magazine to prepare for the wire bonding process. Go to Jin 40.

本発明はここでは、好ましくは連続した要領で実施されたが、所望ならば間欠的 に実施しても良い。The invention is herein preferably practiced in a continuous manner, but intermittently if desired. It may also be carried out.

本発明は相当な特種性の下で好ましい形態として説明したが、本開示は例示とし てのみのものであり、各種の変更が本発明の精神と範囲を離れること無く成し得 ることは言うまでもないところである。Although the invention has been described in preferred form with considerable specificity, this disclosure is intended to be illustrative only. It is understood that various changes may be made without departing from the spirit and scope of the invention. It goes without saying that this is true.

特許請求の範囲（補正後） １．（ａ）サブストレート上にボンディング相当量のポリマ基接着剤組成物を被 着し、 （ｂ）接着剤を活性化するために、０．５〜２６５秒間接着秒間底物を加熱し、 （ｃ）ダイを活性化接着剤に接触して、ダイをサブストレートに取り付ける、 工程から成るダイをサブストレートに取り付け−る方法。Claims (after amendment) 1. (a) coat a substrate with a bonding equivalent amount of a polymer-based adhesive composition; Arrived, (b) heating the bottom object for 0.5-265 seconds to activate the adhesive; (c) contacting the die with an activated adhesive to attach the die to the substrate; A method of attaching a die to a substrate.

２、接着剤組成物がペーストである特許請求の範囲第１項記載の方法。2. The method according to claim 1, wherein the adhesive composition is a paste.

３、接着剤組成物は約１７５℃乃至約３５０℃に加熱される特許請求の範囲第２ 項記載の方法。3. The adhesive composition is heated to about 175°C to about 350°C. The method described in section.

４、接着剤組成物は約５０℃乃至約２００℃の温度に加熱される特許請求の範囲 第２項記載の方法。4. Claims in which the adhesive composition is heated to a temperature of about 50°C to about 200°C The method described in Section 2.

５、工程（ｂ）は０．５乃至２．５秒行われる特許請求の範囲第１項記載の方法 。5. The method according to claim 1, wherein step (b) is carried out for 0.5 to 2.5 seconds. .

６、サブストレートが金属リードフレームである特許請求の範囲第１項記載の方 法。6. The person according to claim 1, wherein the substrate is a metal lead frame. Law.

７、サブストレートがセラミックから成る特許請求の範囲第１項記載の方法。7. The method of claim 1, wherein the substrate is made of ceramic.

ブストレートである特許請求の範囲第７項記載のる特許請求の範囲第７項記載の 方法。Claim 7 which is a straight rate Method.

１０、サブストレートが回路基板である特許請求の範囲第１項記載の方法。10. The method according to claim 1, wherein the substrate is a circuit board.

１１、組成物は、 ５−７５％の樹脂と、 ２５−９５％のフィシと、 ０−５０％の溶媒 とから成る特許請求の範囲第２項記載の方法。11. The composition is 5-75% resin, 25-95% fisi, 0-50% solvent A method according to claim 2, comprising:

１２、組成物は、 ５−８５％の熱可塑性樹脂と、 ２５−７５％のフィシと、 ２０−５０％の溶媒 とから成る特許請求の範囲第１項記載の方法。12. The composition is 5-85% thermoplastic resin; 25-75% fisi, 20-50% solvent A method according to claim 1, comprising:

１３、フィシが電気的に導電性のフィシである特許請求の範囲第１２項記載の方 法。13. The person according to claim 12, wherein the fiber is an electrically conductive fiber. Law.

１４、電気的に導電性のフィシが銀、金、白金、イリジウム、水銀、ルテニウム 、オスミウム、及びそれらの混合物乃至合金で構成されるクラスから選定された 金属である特許請求の範囲第１３項記載の方法。14. Electrically conductive materials include silver, gold, platinum, iridium, mercury, and ruthenium. selected from the class consisting of osmium, osmium, and mixtures or alloys thereof. 14. The method according to claim 13, wherein the material is metal.

１５、フィシが熱的に伝導性のフィシである特許請求の範囲第１２項記載の方法 。15. The method according to claim 12, wherein the fiber is a thermally conductive fiber. .

１６、熱的に伝導性のフィシがベリリアである特許請求の範囲第１５項記載の方 法。16. The person according to claim 15, wherein the thermally conductive fisi is beryllia. Law.

１７、熱的に伝導性のフィシがアルミナである特許請求の範囲第１項記載の方法 。17. The method according to claim 1, wherein the thermally conductive fiber is alumina. .

１８、サブストレート、接着剤、及びダイ、からなる組み立て物が更に加熱され る特許請求の範囲第１項記載の方法。18. The assembly consisting of the substrate, adhesive, and die is further heated. A method according to claim 1.

１９、接着剤組成物は金属リードフレームのパドル領域内に設置され、これが更 にリードフレーム、接着剤、およびダイの組み立て物を所望により更に加熱する 装置を有し、これによってダイかリードフレームにボンドされる特許請求の範囲 第６項記載の方法。19. The adhesive composition is placed within the paddle area of the metal lead frame, which further heat the leadframe, adhesive, and die assembly as desired. Claims having an apparatus thereby bonded to a die or lead frame The method described in Section 6.

２０、方法が連続的な要領で行われる特許請求の範囲第１項又は第１９項記載の 方法。20. The method according to claim 1 or 19, wherein the method is carried out in a continuous manner. Method.

２１、（ａ）サブストレートを装置に沿って動かす移送装置と、 （ｂ）接着剤をディスペンスする前にサブストレートを加熱する所望により設置 する装置と、（Ｃ）サブストレートの選択された領域に接着剤組成物をディスペ ンスする装置と、 （ｄ）ダイを設置する前に接着剤を加熱する装置と、 （ｅ）加熱された接着剤の上にダイを選択、設置する装置と、更に、 （ｆ）サブストレート、接着剤、及びダイの組み立て物を後加熱する所望により 設置する装置とを有するダイをサブストレート上にポリマ基接着剤で取り付ける 装置。21. (a) a transfer device for moving the substrate along the device; (b) Optional installation of heating the substrate before dispensing the adhesive. (C) dispensing the adhesive composition onto selected areas of the substrate; a device to monitor the (d) a device for heating the adhesive prior to placing the die; (e) a device for selecting and placing a die on the heated adhesive; (f) Optionally post-heating the substrate, adhesive, and die assembly. Attach the die with the mounting equipment onto the substrate with a polymer-based adhesive Device.

２２、接着剤を加熱する加熱装置は加熱したプラテンである特許請求の範囲第２ １項記載の装置。22. Claim 2, wherein the heating device for heating the adhesive is a heated platen. The device according to item 1.

２３、接着剤を加熱する加熱装置は加熱した空気の流れである特許請求の範囲第 ２１項記載の装置。23. Claim No. 2 in which the heating device for heating the adhesive is a flow of heated air. 22. The device according to item 21.

２４、接着剤を加熱する加熱装置がレーザーを有するものである特許請求の範囲 第２１項記載の装置。24. Claims in which the heating device for heating the adhesive includes a laser Apparatus according to clause 21.

２５、接着剤を加熱する加熱装置が赤外線電球を有するものである特許請求の範 囲第２１項記載の装置。25. Claims in which the heating device for heating the adhesive includes an infrared light bulb 22. The apparatus according to paragraph 21.

２６、後加熱装置が１又はそれ以上の加熱プラテンを有する特許請求の範囲第２ １項記載の装置。26. Claim 2 in which the post-heating device has one or more heating platens The device according to item 1.

２７、後加熱装置が赤外線加熱装置を有するものである特許請求の範囲第２１項 記載の装置。27. Claim 21, wherein the post-heating device has an infrared heating device The device described.

２８、熱可塑性樹脂の接着剤が分子量（平均値）が５０．０００〜２００．００ ０のシロキサン変性ポリイミド樹脂である特許請求の範囲第１項記載の方法。28. The thermoplastic resin adhesive has a molecular weight (average value) of 50.000 to 200.00. The method according to claim 1, wherein the siloxane-modified polyimide resin has a composition of 0.

補正書の翻訳文提出書（特許法第１８４条の８）平成　曜５月　９日Submission of translation of written amendment (Article 184-8 of the Patent Law) May 9, Heisei

Claims (1)

【特許請求の範囲】 １．（ａ）サブストレート上にボンディング相当量のポリマ基接着剤組成物を被 着し、 （ｂ）引きつづいて接着剤組成物を加熱して接着剤を活性化し、更に、 （ｃ）ダイを活性化接着剤に接触して、ダイをサブストレートに取り付ける、 工程から成るダイをサブストレートに取り付ける方法。 ２．接着剤組成物がペーストの形状をしている請求項１記載の方法。 ３．接着剤組成物は約１７５℃乃至約３５０℃に加熱される請求項２記載の方法 。 ４．接着剤ペーストは熱硬化ポリマ化合物からなる請求項３記載の方法。 ５．接着剤ペースト組成物−熱硬化ポリマ化合物はエポキシ又はマレイミド樹脂 からなる請求項４記載の方法。 ６．接着剤ペーストは熱可塑性ポリマ化合物である請求項２記載の方法。 ７．接着剤ペースト熱可塑性ポリマは熱可塑性ポリイミドである請求項６記載の 方法。 ８．接着剤ペーストは約５０℃から約２００℃に加熱されて活性化される請求項 ６又は第７記載の方法。 ９．接着剤組成物はフィルム又はリボンの形である請求項第１記載の方法。 １０．接着剤組成物は約１７５℃乃至約３５０℃に加熱される請求項９記載の方 法。 １１．サブストレートは金属リードフレームである請求項１記載の方法。 １２．サブストレートはセラミックから成る請求項１記載の方法。 １３．サブストレートはセラミックハイブリッドサブストレートである請求項１ ２記載の方法。 １４．サブストレートはセラミックパッケージである請求項１２記載の方法。 １５．サブストレートは回路基板である請求項１記載の方法。 １６．組成物は、 ５−７５％の樹脂と、 ２５−９５％のフィラと、 ０−５０％の溶媒 とから成る請求項２記載の方法。 １７．組成物は、 ５−８５％の熱可塑性樹脂と、 ２５−７５％のフィラと、 ２０−５０％の溶媒 とから成る請求項６記載の方法。 １８．フィラは電気的に導電性のフィラである請求項１７記載の方法。 １９．電気的に導電性のフィラは銀、金、白金、イリジウム、水銀、ルテニウム 、オスミウム、及びそれらの混合物乃至合金で構成されるクラスから選定された 金属である請求項１８記載の方法。 ２０．フィラは熱的に伝導性のフィラである請求項１８記載の方法。 ２１．熱的に伝導性のフィラはベリリアである請求項２０記載の方法。 ２２．熱的に伝導性のフィラはアルミナである請求項２０記載の方法。 ２３．サブストレート、接着剤、及びダイ、からなる組み立て物は更に加熱され る請求項１記載の方法。 ２４．方法が連続的な要領で行われる請求項１記載の方法。 ２５．（ａ）リードフレームのパドル領域上にペースト状の熱可塑性ポリマ基接 着剤組成物のボンディング量を設置し、 （ｂ）つづいて、接着剤組成物を約５０℃乃至約２００℃に加熱して接着剤を活 性化し、 （ｃ）ダイを活性化接着剤の上におき、更に、（ｄ）所望により、リードフレー ム、接着剤、及びクイからなる組み立て体を更に加熱してダイをリードフレーム にボンディングする、 工程を有するダイを金属リードフレームに取り付ける方法。 ２６．方法が連続的に行われる請求項２５記載の方法。 ２７．（ａ）リードフレームのパドル領域上にリボン又はフィルム状の熱可塑性 ポリマ基接着剤組成物のボンディング量を設置し、 （ｂ）つづいて、接着剤組成物を約２５０℃乃至約３５０℃に加熱して接着剤を 活性化し、 （ｃ）ダイを活性化接着剤の上におき、更に、（ｄ）所望により、リードフレー ム、接着剤、及びダイからなる組み立て体を更に加熱してダイをリードフレーム にボンディングする、 工程を有するダイを金属リードフレームに取り付ける方法。 ２８．方法が連続的に行われる請求項２７記載の方法。 ２９（ａ）サブストレートを装置に沿って動かす移送装置と、 （ｂ）接着剤をディスペンスする前にサブストレートを加熱する所望により設置 する装置と、 （ｃ）サブストレートの選択された領域に接着剤組成物をディスペンスする装置 と、 （ｄ）ダイを設置する前に接着剤を加熱する装置と、（ｅ）加熱された接着剤の 上にダイを選択、設置する装置と、更に、 （ｆ）サブストレート、接着剤、及びダイの組み立て物を後加熱する所望により 設置する装置 とを有するダイをサブストレート上にポリマ基接着剤で取り付ける装置。 ３０．接着剤がペースト状である請求項２９記載の装置。 ３１．接着剤がフィルム又はリボン状である請求項２９記載の装置。 ３２．接着剤を加熱する加熱装置が加熱したブラテンである請求項２９記載の装 置。 ３３．接着剤を加熱する加熱装置は加熱した空気の流れである請求項２９記載の 装置。 ３４．接着剤を加熱する加熱装置はレーザーを有するものである請求項２９記載 の装置。 ３５．接着剤を加熱する加熱装置が赤外線電球を有するものである請求項２９記 載の装置。 ３６．後加熱装置が１又はそれ以上の加熱プラテンを有する請求項２９記載の装 置。 ３７．後加熱装置が赤外線加熱装置を有するものである請求項２９記載の装置。[Claims] 1. (a) coat a substrate with a bonding equivalent amount of a polymer-based adhesive composition; Arrived, (b) subsequently heating the adhesive composition to activate the adhesive; (c) contacting the die with an activated adhesive to attach the die to the substrate; A method of attaching a die to a substrate, consisting of a process. 2. The method of claim 1, wherein the adhesive composition is in the form of a paste. 3. The method of claim 2, wherein the adhesive composition is heated to about 175°C to about 350°C. . 4. 4. The method of claim 3, wherein the adhesive paste comprises a thermoset polymer compound. 5. Adhesive paste composition - thermoset polymer compound is epoxy or maleimide resin 5. The method according to claim 4, comprising: 6. 3. The method of claim 2, wherein the adhesive paste is a thermoplastic polymer compound. 7. 7. The adhesive paste thermoplastic polymer according to claim 6, wherein the adhesive paste thermoplastic polymer is a thermoplastic polyimide. Method. 8. Claim: The adhesive paste is activated by heating from about 50°C to about 200°C. 6 or 7. 9. A method according to claim 1, wherein the adhesive composition is in the form of a film or ribbon. 10. 10. The method of claim 9, wherein the adhesive composition is heated to about 175<0>C to about 350<0>C. Law. 11. The method of claim 1, wherein the substrate is a metal lead frame. 12. 2. The method of claim 1, wherein the substrate comprises ceramic. 13. Claim 1: The substrate is a ceramic hybrid substrate. The method described in 2. 14. 13. The method of claim 12, wherein the substrate is a ceramic package. 15. The method of claim 1, wherein the substrate is a circuit board. 16. The composition is 5-75% resin, 25-95% filament, 0-50% solvent 3. The method of claim 2, comprising: 17. The composition is 5-85% thermoplastic resin; 25-75% filler, 20-50% solvent 7. The method of claim 6, comprising: 18. 18. The method of claim 17, wherein the filler is an electrically conductive filler. 19. Electrically conductive fillers include silver, gold, platinum, iridium, mercury, and ruthenium. selected from the class consisting of osmium, osmium, and mixtures or alloys thereof. 19. The method according to claim 18, wherein the material is metal. 20. 19. The method of claim 18, wherein the filler is a thermally conductive filler. 21. 21. The method of claim 20, wherein the thermally conductive filler is beryllia. 22. 21. The method of claim 20, wherein the thermally conductive filler is alumina. 23. The assembly consisting of substrate, adhesive, and die is further heated. 2. The method according to claim 1. 24. 2. A method according to claim 1, wherein the method is carried out in a continuous manner. 25. (a) Paste thermoplastic polymer base on the paddle area of the lead frame. Setting the bonding amount of the adhesive composition, (b) Next, heat the adhesive composition to about 50°C to about 200°C to activate the adhesive. sexualized, (c) place the die on the activated adhesive; and (d) optionally place the die on the lead frame. The assembly consisting of the rubber, adhesive, and die is further heated to attach the die to the lead frame. bonding to, A method of attaching a die to a metal lead frame with a process. 26. 26. The method of claim 25, wherein the method is performed continuously. 27. (a) a ribbon or film of thermoplastic on the paddle area of the lead frame; Installing a bonding amount of polymer-based adhesive composition; (b) Subsequently, the adhesive composition is heated to about 250°C to about 350°C to release the adhesive. Activate, (c) place the die on the activated adhesive; and (d) optionally place the die on the lead frame. The assembly consisting of the film, adhesive, and die is further heated to attach the die to the lead frame. bonding to, A method of attaching a die to a metal lead frame with a process. 28. 28. The method of claim 27, wherein the method is performed continuously. 29(a) a transfer device for moving the substrate along the device; (b) Optional installation of heating the substrate before dispensing the adhesive. a device to (c) a device for dispensing the adhesive composition onto selected areas of the substrate; and, (d) a device for heating the adhesive before placing the die; and (e) a device for heating the adhesive before placing the die. a device for selecting and installing a die on the top; (f) Optionally post-heating the substrate, adhesive, and die assembly. Equipment to be installed A device for attaching a die with a polymer-based adhesive onto a substrate. 30. 30. The device of claim 29, wherein the adhesive is in the form of a paste. 31. 30. The device of claim 29, wherein the adhesive is in the form of a film or ribbon. 32. The apparatus according to claim 29, wherein the heating device for heating the adhesive is a heated braten. Place. 33. 30. The heating device according to claim 29, wherein the heating device for heating the adhesive is a stream of heated air. Device. 34. Claim 29, wherein the heating device for heating the adhesive comprises a laser. equipment. 35. Claim 29, wherein the heating device for heating the adhesive comprises an infrared light bulb. equipment. 36. 30. The apparatus of claim 29, wherein the post-heating device comprises one or more heating platens. Place. 37. 30. The apparatus of claim 29, wherein the post-heating device comprises an infrared heating device.
JP62507154A 1986-11-13 1987-11-12 Manufacturing method of semiconductor device Pending JPH01502868A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US93060086A 1986-11-13 1986-11-13
US930,600 1986-11-13
US948376 1986-12-31
US008810 1987-01-30
US087002 1987-08-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144082A (en) * 1998-11-16 2000-05-26 Minnesota Mining & Mfg Co <3M> Thermosetting adhesive composition, adhesive and preparation of adhesive
WO2014178252A1 (en) * 2013-04-30 2014-11-06 日東電工株式会社 Film-like adhesive, dicing tape-integrated film-like adhesive, and method for manufacturing semiconductor device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019535A (en) * 1989-03-28 1991-05-28 General Electric Company Die attachment method using nonconductive adhesive for use in high density interconnected assemblies
EP0409257A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
EP0409004A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
US5237206A (en) * 1989-07-21 1993-08-17 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
US5002818A (en) * 1989-09-05 1991-03-26 Hughes Aircraft Company Reworkable epoxy die-attach adhesive
DE4124053A1 (en) * 1991-07-19 1993-01-21 Siemens Ag METHOD FOR MAKING AN ADHESIVE CONNECTION BETWEEN AT LEAST ONE COMPONENT AND A METAL SUBSTRATE
KR0171438B1 (en) * 1993-09-29 1999-10-15 모리시따 요오이찌 Method for mounting a semiconductor device on a circuit board, and a circuit board with a semiconductor device mounted thereon
KR100576886B1 (en) * 2000-08-30 2006-05-03 앰코 테크놀로지 코리아 주식회사 Manufacturing method of semiconductor package
JP3542080B2 (en) * 2001-03-30 2004-07-14 リンテック株式会社 Adhesive tape / sheet for supporting semiconductor chip, semiconductor chip carrier, semiconductor chip mounting method, and semiconductor chip package
KR100819794B1 (en) * 2002-04-02 2008-04-07 삼성테크윈 주식회사 Lead-frame and method for manufacturing semi-conductor package using such
DE10240460A1 (en) 2002-08-29 2004-03-11 Infineon Technologies Ag Universal semiconductor package with pre-crosslinked plastic investment materials and process for producing the same
CN101765911B (en) * 2007-06-28 2012-06-27 桑迪士克公司 Semiconductor die having a redistribution layer
DE102015107724B4 (en) * 2015-04-02 2016-12-01 Heraeus Deutschland GmbH & Co. KG Method for producing a substrate arrangement, substrate arrangement, method for connecting an electronic component to a substrate arrangement and electronic component

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211154A (en) * 1975-07-17 1977-01-27 Shoei Chemical Ind Co Electrode material for wire welding
JPS57152135A (en) * 1981-03-13 1982-09-20 Yamagata Nippon Denki Kk Manufacture of semiconductor device
JPS57202765A (en) * 1981-05-21 1982-12-11 Gen Electric Power device module
JPS6066440A (en) * 1983-09-21 1985-04-16 Fujitsu Ltd Manufacture of semiconductor device
JPS6110246A (en) * 1984-06-26 1986-01-17 Hitachi Chem Co Ltd Manufacture of semiconductor device
JPS61164233A (en) * 1985-01-17 1986-07-24 Oki Electric Ind Co Ltd Die-bonding method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029628A (en) * 1974-05-22 1977-06-14 The United States Of America As Represented By The Secretary Of The Navy Bonding material for planar electronic device
EP0051165A1 (en) * 1980-11-03 1982-05-12 BURROUGHS CORPORATION (a Michigan corporation) Repairable IC package with thermoplastic chip attach
JPS59931A (en) * 1982-06-25 1984-01-06 Mitsubishi Electric Corp Method for mounting of semiconductor element
JPS6045030A (en) * 1983-08-23 1985-03-11 Hitachi Chem Co Ltd Manufacture of semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211154A (en) * 1975-07-17 1977-01-27 Shoei Chemical Ind Co Electrode material for wire welding
JPS57152135A (en) * 1981-03-13 1982-09-20 Yamagata Nippon Denki Kk Manufacture of semiconductor device
JPS57202765A (en) * 1981-05-21 1982-12-11 Gen Electric Power device module
JPS6066440A (en) * 1983-09-21 1985-04-16 Fujitsu Ltd Manufacture of semiconductor device
JPS6110246A (en) * 1984-06-26 1986-01-17 Hitachi Chem Co Ltd Manufacture of semiconductor device
JPS61164233A (en) * 1985-01-17 1986-07-24 Oki Electric Ind Co Ltd Die-bonding method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144082A (en) * 1998-11-16 2000-05-26 Minnesota Mining & Mfg Co <3M> Thermosetting adhesive composition, adhesive and preparation of adhesive
WO2014178252A1 (en) * 2013-04-30 2014-11-06 日東電工株式会社 Film-like adhesive, dicing tape-integrated film-like adhesive, and method for manufacturing semiconductor device

Also Published As

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WO1988003704A1 (en) 1988-05-19
BR8707876A (en) 1990-03-01
KR910006966B1 (en) 1991-09-14
EP0333734A1 (en) 1989-09-27
KR890700267A (en) 1989-03-10
CN87107692A (en) 1988-05-25

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