JP2010278025A - Anisotropic conductive film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an anisotropic conductive film having superior connectivity in a fine circuit. <P>SOLUTION: The anisotropic conductive film is constituted of a 3-layer structure of an ACF layer 11 which is a conductive particle containing layer, an NCF layer 12 which is a first insulating resin layer, and a pressurized flow layer 13 which is a second insulating resin layer. Due to the pressurized flow layer 13, which does not contain a curing agent, conductive particles jam-packed between bumps are made to be a pressurized flow, outbreak of short-circuits is suppressed. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an anisotropic conductive film in which conductive particles are dispersed in a thermosetting resin.

  Conventionally, an anisotropic conductive film (ACF) is used for mounting a component such as a semiconductor on a printed circuit board. For example, in the manufacture of an LCD (Liquid Crystal Display) panel, a driving IC (integrated circuit) for controlling pixels is used for a so-called chip-on-glass (COG) that is bonded to a glass substrate.

  When this anisotropic conductive film is used for fine pitch wiring connection, there is a disadvantage that the conductive particles dispersed in the anisotropic conductive film are sandwiched between the wirings and a short circuit occurs. For this reason, for example, Patent Document 1 proposes that the entire surface of the conductive particles is covered with an insulating film to suppress the occurrence of a short circuit.

  However, in the technique described in Patent Document 1, when conductive particles are sandwiched between wirings that have been further refined in recent years, the connection resistance between the electrodes increases, and it is difficult to obtain a stable conduction resistance. Met.

JP-A-8-335407

  The present invention has been proposed in view of such conventional circumstances, and provides an anisotropic conductive film excellent in connectivity in a fine circuit.

  As a result of intensive studies, the inventors of the present invention have suppressed the occurrence of short-circuits by providing an insulating resin layer that does not contain a curing agent for causing conductive particles to flow out between the wires during crimping, thereby reducing connectivity. It was found that can be improved.

  That is, the anisotropic conductive film according to the present invention includes a film-forming resin, a thermosetting resin, a curing agent, a conductive particle-containing layer containing conductive particles, a film-forming resin, and a thermosetting resin. It has the 1st insulating resin layer containing resin, a hardening | curing agent, film forming resin, and the 2nd insulating resin layer which contains a thermosetting resin and does not contain a hardening | curing agent.

  Moreover, the method for producing an anisotropic conductive film according to the present invention includes a film-forming resin, a thermosetting resin, a curing agent, a conductive particle-containing layer containing conductive particles, a film-forming resin, Laminating a first insulating resin layer containing a thermosetting resin, a curing agent, a film-forming resin, and a second insulating resin layer containing a thermosetting resin and no curing agent Let

  In the connection method according to the present invention, the above-described anisotropic conductive film is pasted on the terminal of the first electronic component, the second electronic component is temporarily arranged on the anisotropic conductive film, and the second The electronic component is pressed by a heat pressing device to connect the terminal of the first electronic component and the terminal of the second electronic component.

  Moreover, the connection body which concerns on this invention is a connection body manufactured by the said connection method.

  According to the present invention, since the insulating resin layer that does not contain a curing agent pushes the conductive particles out of the wiring during pressure bonding, the occurrence of a short circuit can be suppressed and the connectivity can be improved.

It is a figure which shows the structural example of an anisotropic conductive film. It is a figure for demonstrating the state in which electroconductive particle is jammed between bumps.

Hereinafter, embodiments of the present invention will be described in detail in the following order with reference to the drawings.
1. 1. Anisotropic conductive film 2. Manufacturing method of anisotropic conductive film Connection method 4. Example

<1. Anisotropic Conductive Film>
An anisotropic conductive film shown as a specific example of the present invention includes a film-forming resin, a thermosetting resin, a curing agent, a conductive particle-containing layer containing conductive particles, a film-forming resin, and a thermosetting resin. A first insulating resin layer containing a curable resin, a curing agent, a film-forming resin, a thermosetting resin, and a second insulating resin layer containing no curing agent. is there.

  FIG. 1 is a diagram illustrating a configuration example of an anisotropic conductive film. The anisotropic conductive film in the present embodiment includes an ACF layer 11 that is a conductive particle-containing layer and an NCF layer 12 that is a first insulating resin layer, as shown in (i) to (iii) of FIG. , And a three-layer structure of a draft layer 13 which is a second insulating resin layer.

  The anisotropic conductive film shown in (i) of FIG. 1 has a configuration in which a push layer 13, an NCF layer 12, and an ACF layer 11 are disposed in order from a PET (Polyethylene Terephthalate) layer 14 that is a release film. In addition, the anisotropic conductive film shown in (ii) of FIG. 1 has a configuration in which an NCF layer 12, a rush current layer 13, and an ACF layer 11 are arranged in this order from the PET layer 14. In addition, the anisotropic conductive film shown in (iii) of FIG. 1 has a configuration in which an NCF layer 12, an ACF layer 11, and an urging layer 13 are arranged in this order from the PET layer. On the other hand, the anisotropic conductive film shown in (iv) of FIG. 1 has a conventional configuration in which the NCF layer 12 and the ACF layer 11 are arranged in this order from the PET layer 14.

  Since the conventional anisotropic conductive film is composed of the NCF layer 12 containing the curing agent and the ACF layer 11, the conductive particles are sandwiched between the wirings during crimping as shown in FIG. It may harden and cause a short circuit. However, the anisotropic conductive film according to the present embodiment has a push layer 13 that does not contain a curing agent, and as a result, as shown in FIG. The conductive particles that have been swept away can be suppressed and the occurrence of short circuits can be suppressed. In addition, since it is not necessary to reinforce such as increasing the thickness of the insulating film of conductive particles, the connection can be made with a low resistance. Furthermore, since it is not necessary to reduce the compounding quantity of electroconductive particle, high connection reliability can be acquired also with a fine circuit.

  In addition, the anisotropic conductive film in the present embodiment has the structure (i) to (iii) shown in FIG. 1, in which the push-flow layer 13 is sandwiched between the NCF layer 12 and the ACF layer 11 (ii). A configuration is preferred. By adopting the configuration (ii), the conductive particles clogged between the bumps can be swept to suppress the occurrence of a short circuit, and the conductive particles can be captured at a high capture rate.

  Moreover, it is preferable that the melt viscosity of the draft layer 13 is lower than the melt viscosity of the NCF layer 12 and the ACF layer 11 at the temperature at which the NCF layer 12 exhibits the lowest melt viscosity. As a result, the swirling layer 13 quickly heats and melts the conductive particles clogged between the bumps at the time of pressure bonding, so that the occurrence of a short circuit can be suppressed.

Moreover, it is preferable that the specific melt viscosity of the draft layer 13 is 1.0 * 10 < ² > -2.5 * 10 < ³ > Pa * s. When the melt viscosity of the draft layer 13 is 1.0 × 10 ² Pa · s or more, the shape of the draft layer 13 can be maintained. Moreover, the fluidity | liquidity at the time of crimping | compression-bonding can be ensured and the electroconductive particle can be swept away because the melt viscosity of the draft layer 13 is 2.5 * 10 < ³ > Pa * s or less.

  Moreover, it is preferable that the total thickness of the three layers of the ACF layer 11, the NCF layer 12, and the swirling layer 13 is larger than the height of the bump of the electronic component to be connected. More preferably, the thickness is obtained by adding 15 to 45 μm to the height of the bump. Thereby, the conductive particles clogged between the bumps can be strongly swept away, and the connection resistance value can be lowered.

  Next, the ACF layer 11, the NCF layer 12, the rush layer 13, and the PET layer 14 of the anisotropic conductive film in the present embodiment will be described.

<1-1. ACF layer>
The ACF layer 11 contains a film forming resin, a thermosetting resin, a curing agent, and conductive particles.

  The film-forming resin corresponds to a high molecular weight resin having an average molecular weight of 10,000 or more, and preferably has an average molecular weight of about 10,000 to 80,000 from the viewpoint of film formation. Examples of the film forming resin include various resins such as phenoxy resin, polyester urethane resin, polyester resin, polyurethane resin, acrylic resin, polyimide resin, butyral resin, and these may be used alone or in combination of two or more. You may use it in combination. Among these, phenoxy resin is preferably used from the viewpoints of film formation state, connection reliability, and the like.

  As the thermosetting resin, an epoxy resin, a liquid epoxy resin having fluidity at room temperature, or the like may be used alone, or two or more kinds may be mixed and used. Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolac type epoxy resin, various modified epoxy resins such as rubber and urethane, etc. These are used alone or in combination of two or more. May be. Liquid epoxy resins include bisphenol type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, phenol novolac type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, phenol aralkyl type epoxy resin, and naphthol type epoxy resin. Resin, dicyclopentadiene type epoxy resin, triphenylmethane type epoxy resin and the like can be used, and these may be used alone or in admixture of two or more.

  The curing agent is not particularly limited and can be appropriately selected depending on the purpose. For example, a latent curing agent that is activated by heating, a latent curing agent that generates free radicals by heating, and the like can be used. Examples of the latent curing agent activated by heating include anionic curing agents such as polyamine and imidazole, and cationic curing agents such as sulfonium salts.

  The conductive particles can be used as long as they are electrically good conductors. Examples thereof include particles in which metal powder such as copper, silver, nickel, or resin is coated with the metal. Moreover, you may use what coat | covered the whole surface of electroconductive particle with the insulating film.

  As another additive composition, a silane coupling agent is preferably added. As the silane coupling agent, epoxy, amino, mercapto sulfide, ureido, and the like can be used. Among these, in this Embodiment, an epoxy-type silane coupling agent is used preferably. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved. Moreover, you may add an inorganic filler. As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like can be used, and the kind of the inorganic filler is not particularly limited. Depending on the content of the inorganic filler, the fluidity can be controlled and the particle capture rate can be improved. A rubber component or the like can also be used as appropriate for the purpose of relaxing the stress of the bonded body.

  These constituent components of the ACF layer 11 are blended so that the melt viscosity of the ACF layer 11 is greater than the melt viscosity of the swept layer 13 at a temperature at which the NCF layer 12 exhibits the lowest melt viscosity. In addition, as an organic solvent for dissolving them at the time of blending, toluene, ethyl acetate, a mixed solvent thereof, or other various organic solvents can be used.

  The melt viscosity of the ACF layer 11 is preferably higher than the melt viscosity of the NCF layer 12 from the viewpoint of improving the particle capture rate of the conductive particles.

<1-2. NCF layer>
The NCF layer 12 contains a film forming resin, a thermosetting resin, and a curing agent. As the film-forming resin, the thermosetting resin, and the curing agent, those similar to the ACF layer 11 can be used. As other additive composition, it is preferable to add a silane coupling agent as in the case of the ACF layer. As the silane coupling agent, epoxy, amino, mercapto sulfide, ureido, and the like can be used. Among these, in this Embodiment, an epoxy-type silane coupling agent is used preferably. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved. Moreover, you may add an inorganic filler. As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like can be used, and the kind of the inorganic filler is not particularly limited. Depending on the content of the inorganic filler, the fluidity can be controlled and the particle capture rate can be improved. A rubber component or the like can also be used as appropriate for the purpose of relaxing the stress of the bonded body.

  These constituent components of the NCF layer 12 are blended so that the melt viscosity of the NCF layer 12 is greater than the melt viscosity of the swept layer 13 at a temperature at which the NCF layer 12 exhibits the lowest melt viscosity.

  Furthermore, from the viewpoint of improving the particle capture rate of the conductive particles, it is preferable that the melt viscosity becomes higher in the order of the draft layer 13, the NCF layer, and the ACF layer.

<1-3. Current layer>
The pushing layer 13 contains a film-forming resin and a thermosetting resin. As the film forming resin and the thermosetting resin, those similar to the ACF layer 11 can be used. As other additive composition, it is preferable to add a silane coupling agent as in the case of the ACF layer. As the silane coupling agent, epoxy, amino, mercapto sulfide, ureido, and the like can be used. Among these, in this Embodiment, an epoxy-type silane coupling agent is used preferably. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved. Moreover, you may add an inorganic filler. As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like can be used, and the kind of the inorganic filler is not particularly limited. Depending on the content of the inorganic filler, the fluidity can be controlled and the particle capture rate can be improved. A rubber component or the like can also be used as appropriate for the purpose of relaxing the stress of the bonded body.

Each component of the swirling layer 13 is blended so that the melt viscosity of the swirling layer 13 is smaller than the melt viscosity of the NCF layer 12 and the ACF layer 11 at a temperature at which the NCF layer 12 exhibits the lowest melt viscosity. . The specific melt viscosity of the swirling layer 13 is preferably 1.0 × 10 ^{2 to} 2.5 × 10 ³ Pa · s. When the melt viscosity of the draft layer 13 is 1.0 × 10 ² Pa · s or more, the shape of the draft layer 13 can be maintained. If the melt viscosity of the flow layer 13 is less than 1.0 × 10 ² Pa · s, the melt viscosity may be too low, which may cause problems in film formation, and if it is greater than 2.5 × 10 ³ Pa · s. Since the melt viscosity is too high, the swept layer 13 cannot secure sufficient fluidity. Moreover, the fluidity | liquidity at the time of crimping | compression-bonding can be ensured and the electroconductive particle can be swept away because the melt viscosity of the draft layer 13 is 2.5 * 10 < ³ > Pa * s or less.

<1-4. PET layer>
The PET layer 14 has a laminated structure in which, for example, a release agent such as silicone is applied to PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), and the like. While preventing the ACF layer 11, the NCF layer 12, and the draft layer 13 from drying, these shapes are maintained.

<2. Method for producing anisotropic conductive film>
Next, the manufacturing method of the anisotropic conductive film mentioned above is demonstrated. In addition, about the part corresponding to the anisotropic conductive film mentioned above, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  The method for manufacturing an anisotropic conductive film in the present embodiment is a method in which the ACF layer 11, the NCF layer 12, and the rush current layer 13 are laminated. Specifically, the resin composition of the ACF layer 11 is applied on a release substrate and dried to form the ACF layer 11. Similarly, the NCF layer 12 and the rushing layer 13 are formed, and each layer Are pasted together as in the configurations of (i) to (iii) shown in FIG.

  In the forming step, the resin composition of the ACF layer 11, the NCF layer 12, or the rushing layer 13 is applied onto the release substrate using a bar coater, a coating apparatus, or the like, and the resin composition on the release substrate 12 is heated. A layer having a predetermined thickness is formed by drying using an oven, a heat drying apparatus, or the like.

  In the bonding step, the ACF layer 11, the NCF layer 12, and the swirling layer 13 having a predetermined thickness formed in the forming step are bonded and laminated in any one of the configurations (i) to (iii) shown in FIG. .

  In addition, it is not restricted to the above manufacturing methods, The 1st layer resin composition is apply | coated and dried on a peeling base material, a 1st layer is formed on it, and a 2nd layer, a 1st layer are sequentially performed on it similarly. Three layers may be formed.

<3. Connection method>
Next, the connection method of the electronic component using the anisotropic conductive film mentioned above is demonstrated. The electronic component connecting method in the present embodiment is performed by attaching an anisotropic conductive film having the ACF layer 11, the NCF layer 12, and the swirling layer 13 to the terminal of the first electronic component. Temporarily disposing the second electronic component on the isotropic conductive film, pressing the second electronic component from the second electronic component with a heat pressing device, and connecting the terminal of the first electronic component and the terminal of the second electronic component Is. Thereby, the connection body by which the terminal of the 1st electronic component and the terminal of the 2nd electronic component were connected via the electroconductive particle disperse | distributed to the anisotropic conductive film is obtained.

  In the present embodiment, since the anisotropic conductive film has the push layer 13 that does not contain a curing agent, the conductive particles quickly melted at the time of pressure bonding and the conductive particles clogged between the terminals are swept away, and a short circuit occurs. Can be suppressed. In particular, by using the anisotropic conductive film of the present embodiment for connection of a fine circuit such as an IC chip having an inter-bump space of 10 μm or less or an IC chip having a staggered lattice bump, conductive particles are sandwiched between wirings. Can be prevented, and a stable conduction resistance can be obtained.

<4. Example>
Examples of the present invention will be described below, but the present invention is not limited to these examples.

  First, as shown in Table 1, an ACF layer, an NCF layer, and a rushing layer A to C were prepared.

[ACF layer]
20 parts by mass of phenoxy resin (trade name: YP-50, Nippon Steel Chemical Co., Ltd.) as the film-forming resin, and bisphenol A type epoxy resin (trade name: YD-019, Nippon Steel Chemical) as the thermosetting resin 20 parts by mass, bisphenol A type liquid epoxy resin (EP828, Japan Epoxy Resin Co., Ltd.) 40 parts by mass, epoxy silane coupling agent (trade name: A-187, Momentive Performance Materials) 2 parts by mass, a cationic polymerization initiator, 5 parts by mass of a sulfonium salt cationic curing agent (trade name: SI-60L, Sanshin Chemical Industry Co., Ltd.), and Ni / Au plating is applied to the resin particles. 30 parts by mass of the conductive particles (AU203A, Sekisui Chemical Co., Ltd.) having an average particle diameter of 3 μm were blended to prepare a resin composition for the ACF layer. This was applied to the peeled PET using a bar coater and dried in an oven at 70 ° C. for 5 minutes to prepare an ACF layer having a predetermined thickness.

[NCF layer]
An NCF layer having a predetermined thickness was produced in the same manner as the ACF layer except that no conductive particles were blended.

[Swivel layer A]
40 parts by mass of phenoxy resin (trade name: YP-50, Nippon Steel Chemical Co., Ltd.) as a film-forming resin and bisphenol A type liquid epoxy resin (EP828, Japan Epoxy Resin Co., Ltd.) as a thermosetting resin 40 parts by mass and 2 parts by mass of an epoxy-based silane coupling agent (trade name: A-187, Momentive Performance Materials Co., Ltd.) were blended to prepare a resin composition for the rushing layer A. This was applied to the peeled PET using a bar coater, and dried in an oven at 70 ° C. to prepare a scouring layer A having a predetermined thickness.

[Casting layer B]
20 parts by mass of phenoxy resin (trade name: YP-50, Nippon Steel Chemical Co., Ltd.) as the film forming resin, and bisphenol A type epoxy resin (trade name: YD-019, Nippon Steel Chemical) as the thermosetting resin 20 parts by mass, bisphenol A type liquid epoxy resin (EP828, Japan Epoxy Resin Co., Ltd.) 40 parts by mass, epoxy silane coupling agent (trade name: A-187, Momentive Performance Materials) 2 parts by mass was blended to prepare a resin composition for the swirling layer B. This was applied to the peeled PET using a bar coater, and dried in an oven at 80 ° C. to produce a rushing layer B having a predetermined thickness.

[Casting layer C]
40 parts by mass of bisphenol A type epoxy resin (trade name: YD-019, Nippon Steel Chemical Co., Ltd.), 40 parts by mass of bisphenol A type liquid epoxy resin (EP828, Japan Epoxy Resin Co., Ltd.), epoxy silane 2 parts by mass of a coupling agent (trade name: A-187, Momentive Performance Materials Co., Ltd.) was blended to prepare a resin composition for the swirling layer C. This was applied to the peeled PET using a bar coater, and dried in an oven at 80 ° C. to produce a spilled layer C having a predetermined thickness.

<Measurement of melt viscosity>
Using a rotary rheometer (TA Instrument), melting the ACF layer, the NCF layer, and the swirling layers A to C under predetermined measurement conditions (temperature increase rate 10 ° C./min, measurement pressure 5 g constant, measurement plate diameter 8 mm). The viscosity was measured, and the melt viscosity at the lowest melt viscosity reaching temperature T ₀ (° C.) of the NCF layer was determined. Table 1 shows the melt viscosities of the ACF layer, the NCF layer, and the rush layers A to C at T ₀ ° C.

  Next, the anisotropic conductive films of Examples 1 to 9 and Comparative Example 1 were prepared using the ACF layer, the NCF layer, and the rushing layers A to C.

[Example 1]
As in the configuration (i) shown in FIG. 1, a 10 μm-thick swept layer C, a 10 μm-thick NCF layer, and a 10 μm-thick ACF layer are laminated in order from the PET layer, and Example 1 An anisotropic conductive film was prepared.

[Example 2]
As in the configuration (ii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, an urging layer C having a thickness of 5 μm, and an ACF layer having a thickness of 10 μm are laminated in order from the PET layer. An anisotropic conductive film was prepared.

[Example 3]
As in the configuration (ii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, an urging layer A having a thickness of 10 μm, and an ACF layer having a thickness of 10 μm are laminated and laminated in order from the PET layer. An anisotropic conductive film was prepared.

[Example 4]
As in the configuration (ii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, an urging layer B having a thickness of 10 μm, and an ACF layer having a thickness of 10 μm are laminated and laminated in order from the PET layer. An anisotropic conductive film was prepared.

[Example 5]
As in the configuration (ii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, an urging layer C having a thickness of 10 μm, and an ACF layer having a thickness of 10 μm are laminated in order from the PET layer. An anisotropic conductive film was prepared.

[Example 6]
As in the configuration (ii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, an urging layer C having a thickness of 20 μm, and an ACF layer having a thickness of 10 μm are laminated and laminated in order from the PET layer. An anisotropic conductive film was prepared.

[Example 7]
As in the configuration (ii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, an urging layer C having a thickness of 40 μm, and an ACF layer having a thickness of 10 μm are laminated and laminated in order from the PET layer. An anisotropic conductive film was prepared.

[Example 8]
As in the configuration (ii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, a current-carrying layer C having a thickness of 60 μm, and an ACF layer having a thickness of 10 μm are laminated together in order from the PET layer. An anisotropic conductive film was prepared.

[Example 9]
As in the configuration (iii) shown in FIG. 1, an NCF layer having a thickness of 10 μm, an ACF layer having a thickness of 10 μm, and a swirling layer C having a thickness of 10 μm are laminated and laminated in order from the PET layer. An anisotropic conductive film was prepared.

[Comparative Example 1]
As in the configuration (iv) shown in FIG. 1, an NCF layer having a thickness of 10 μm and an ACF layer having a thickness of 10 μm were laminated in order from the PET layer, and an anisotropic conductive film of Comparative Example 1 was produced.

<Evaluation>
Each anisotropic conductive film of Examples 1 to 9 and Comparative Example 1 was placed on a glass substrate with the surface opposite to the PET layer in contact, and the PET layer was peeled off to remove the IC (bump height: 15 μm, between the bumps) Space: 7.5 μm) was thermocompression bonded under a pressure bonding condition of 170 ° C.-50 MPa-5 sec to obtain a connection body.

  The connection body thus obtained was evaluated by measuring the number of shorts, the conduction resistance value, and the number of trapped particles. Table 2 shows the evaluation results. The number of shorts, conduction resistance value, and number of particles trapped were measured as follows.

[Measure the number of shorts]
About each connection body, the resistance value (ohm) between the terminals of 16ch was measured by the 2 terminal method, and the number of shorts (piece) was evaluated.

[Measurement of conduction resistance]
About each joined body, the resistance value (ohm) between the terminals of 16ch was measured by the 4-terminal method, and the maximum value and the average value were calculated | required.

[Measurement of the number of trapped particles]
For each bonded body, the number of particles captured on the bump after bonding (the number of particles after bonding) was counted with a metal microscope to measure the number of particles captured.

  Table 2 shows the evaluation results of the number of shorts, the conduction resistance value, and the number of particles trapped in Examples 1 to 9 and Comparative Example 1.

  From Table 2, Examples 1 to 9 have an ACF layer, an NCF layer, and a current-carrying layer A to C, so that the occurrence of short circuit is suppressed and the connectivity is improved as compared with Comparative Example 1. I understood.

  In addition, comparing Example 1, Example 5, and Example 9, the structure (ii) in which the current-carrying layer is sandwiched between the ACF layer and the NCF layer suppresses the occurrence of a short circuit and reduces the connection. It was found that the resistance was not impaired.

In addition, when Example 3, Example 4, and Example 5 are compared, Examples 4 and 5 using the current flow layers B and C having a melt viscosity lower than the melt viscosity of the NCF layer and the ACF layer are the NCF layer. It was also found that the number of shorts was reduced as compared with Example 3 using the flowing layer A having a melt viscosity higher than that of the ACF layer. Moreover, it turned out that the preferable melt viscosity range of a forcing layer is 1.0 * 10 < ² > -2.5 * 10 < ³ > Pa * s from the melt viscosity of the forcing layers B and C. FIG.

  Further, comparing Example 2 and Examples 5 to 8, the total thickness of the anisotropic conductive film (ACF layer + NCF layer + current flow layer) is 15 to 45 μm thicker than the IC bump height (15 μm). Thus, it was found that the occurrence of short circuit was suppressed and the low connection resistance was not impaired.

  11 ACF layer, 12 NCF layer, 13 Current flow layer, 14 PRT layer

Claims (7)

A conductive particle-containing layer containing a film-forming resin, a thermosetting resin, a curing agent, and conductive particles;
A first insulating resin layer containing a film-forming resin, a thermosetting resin, and a curing agent;
An anisotropic conductive film having a film-forming resin and a second insulating resin layer containing a thermosetting resin and containing no curing agent.   The anisotropic conductive film according to claim 1, wherein the second insulating resin layer is sandwiched between the first insulating resin layer and the conductive particle-containing layer.   The melt viscosity of the second insulating resin layer is higher than the melt viscosity of the first insulating resin layer and the conductive particle-containing layer at a temperature at which the first insulating resin layer exhibits the lowest melt viscosity. The anisotropic conductive film of Claim 1 or Claim 2 which is low. The anisotropic conductive film according to claim 1, wherein the second insulating resin layer has a melt viscosity of 1.0 × 10 ^{2 to} 2.5 × 10 ³ Pa · s. A conductive particle-containing layer containing a film-forming resin, a thermosetting resin, a curing agent, and conductive particles;
A first insulating resin layer containing a film-forming resin, a thermosetting resin, and a curing agent;
A method for producing an anisotropic conductive film comprising laminating a film-forming resin and a second insulating resin layer containing a thermosetting resin and containing no curing agent. The anisotropic conductive film according to any one of claims 1 to 4 is pasted on a terminal of the first electronic component,
Temporarily disposing a second electronic component on the anisotropic conductive film,
Press with a heating press from above the second electronic component,
A connection method for connecting a terminal of the first electronic component and a terminal of the second electronic component.   A connection body manufactured by the connection method according to claim 6.

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