KR101659130B1 - Anisotropic conductive film, display device and semiconductor device comprising the same - Google Patents

Abstract

The present invention relates to an anisotropic conductive film, a display device using the same, and a semiconductor device, and more particularly, to an anisotropic conductive film comprising a conductive layer, a first insulating layer and a second insulating layer, By controlling the melt viscosity in different ways, the fluidity of each layer is controlled. This provides an anisotropic conductive film which can sufficiently fill the inter-terminal insulating layer, reduce the outflow of conductive particles to the space portion, and reduce the inter-terminal short circuit.

Description

Technical Field The present invention relates to an anisotropic conductive film, a display device including the same, and a semiconductor device including the anisotropic conductive film,

The present invention relates to an anisotropic conductive film, a display device including the same, and a semiconductor device.

Anisotropic conductive film (ACF) generally refers to a film-shaped adhesive in which conductive particles are dispersed in a resin such as an epoxy resin, and is an electrically conductive film having electrical conductivity in the thickness direction of the film, Means a polymer membrane having anisotropy and adhesion.

When an anisotropic conductive film is placed between the circuits to be connected and then subjected to a heat pressing process under a certain condition, the circuit terminals are electrically connected by the conductive particles, and between the adjacent terminals, the insulating layer is filled, Are provided to be independent from each other, thereby giving high insulating properties.

In the conventional two-layered anisotropic conductive film structure, a composition flow including conductive particles occurs due to heat and pressure in the process of connecting the terminals through the hot pressing process, and the particle efficiency for expressing connection characteristics between the terminals is extremely low However, there is a problem that a part of the composition including the conductive particles flows into the adjacent space (space part), and the conductive particles collect in a narrow area, causing a short circuit or a connection resistance.

In addition, the insulating layer laminated on the conductive layer is not sufficiently filled between the terminals due to the fluidity of the insulating layer, and flows therethrough, thereby limiting insulation reliability.

Thus, a three-layer structure composed of a second insulating layer, a first insulating layer, and a conductive layer has been proposed in order to fill an insulating layer in a space between terminals and position conductive particles between circuit terminals 2010-278025 Issue A).

Japanese Patent Application Laid-Open No. 2010-278025 discloses that the content of the binder resin is adjusted to adjust the melt viscosity of each layer to the second insulating layer> the first insulating layer> the conductive layer.

However, in order to improve the insulating property and the connection resistance without hindering the basic physical properties of the anisotropic conductive film, there is a limitation in controlling the melt viscosity by the content of the binder.

Further, the melt viscosity of the second insulating layer and the first insulating layer disclosed in the above-mentioned patent can not ensure sufficient insulating property between circuit members, and the conductive layer disclosed in the patent has fluidity so that the conductive particles are not located between the circuit terminals There is a limitation in effectively solving the existing problems of flowing into the adjacent space to cause short-circuit or increasing the connection resistance.

Japanese Laid-Open Patent Application No. 2010-278025 A (Dec. 09, 2010)

Accordingly, an object of the present invention is to provide an anisotropic conductive film capable of sufficiently insulating an inter-terminal insulating layer to secure insulation and reduce connection resistance, a display device using the same, and a semiconductor device.

Specifically, by controlling the melt viscosity of each layer by varying the average particle diameter and the content of silica in each layer, the fluidity of the conductive layer is reduced to increase the particle capture rate of the conductive particles on the terminal without increasing the amount of conductive particles, And an object of the present invention is to provide an anisotropic conductive film which can reduce a conductive particle flowing into a space portion and prevent a short circuit, a display device using the same, and a semiconductor device.

The present invention relates to a method for manufacturing a semiconductor device, which comprises sequentially laminating a first insulating layer, a conductive layer and a second insulating layer, compressing at 110-200 캜 (based on an anisotropic conductive film sensing temperature), 3-7 seconds, 1-7 MPa And the second insulating layer> the first insulating layer> the conductive layer, the increase rate of the spreading length with respect to the width direction, which is expressed by Equation 1 below.

[Formula 1]

(%) = [(Length in the width direction of the layer after compression-length in the width direction of the layer before compression) / length in the width direction of the layer before compression] × 100

The present invention also provides a method of manufacturing a semiconductor device, comprising: sequentially depositing a first insulating layer, a conductive layer, and a second insulating layer, wherein the conductive layer, the first insulating layer, and the second insulating layer include silica, The second insulating layer, the first insulating layer, and the conductive layer, and the average particle diameter of the silica contained in each layer is the second insulating layer> the first insulating layer> the conductive layer.

In addition, the present invention is characterized in that a first insulating layer, a conductive layer, and a second insulating layer are sequentially stacked,

Wherein the anisotropic conductive film has a melt viscosity at 70 to 90 DEG C of from 1,000 to 1,000 DEG C according to the ARES measurement, wherein the melt viscosity of each layer at 70 to 90 DEG C according to the ARES measurement is> conductive layer> first insulating layer> 20,000 Pa · s.

The present invention also relates to a driver circuit, panel; And an anisotropic conductive film according to an exemplary embodiment of the present invention, or a semiconductor device connected by an anisotropic conductive film according to an example of the present invention.

The anisotropic conductive film of the present invention can be produced by controlling the melt viscosity of each layer by varying the average particle size and content of the silica contained in the conductive layer, the first insulating layer and the second insulating layer, There is an advantage that it is possible to provide an anisotropic conductive film in which the insulating layer is sufficiently filled between the terminals and the reliability is improved by improving the connection resistance after reliability.

Further, the anisotropic conductive film of the present invention maximizes the difference in melt viscosity between the second insulating layer and the conductive layer, sufficiently filling the insulating layer between the terminals, reducing the fluidity of the conductive layer and increasing the trapping rate of the conductive particles, It is possible to prevent a short-circuit.

Fig. 1 shows an anisotropic conductive film of the multilayer structure of the present invention.
Fig. 2 shows a heat pressing process of the anisotropic conductive film of the present invention.
3 is a conceptual diagram for explaining the melt viscosity, the minimum melt viscosity and the measuring method thereof at 70 to 90 캜 according to the present invention.

Hereinafter, the present invention will be described in more detail. Those skilled in the art will appreciate that various modifications, additions, and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

The anisotropic conductive film according to an embodiment of the present invention may be an anisotropic conductive film in which a first insulating layer is laminated on one side of a conductive layer and a second insulating layer is laminated on the first insulating layer.

The term " laminate " means that another layer is formed on one surface of an arbitrary layer and can be used in combination with coating or lamination. The term 'insulating layer' means that the first insulating layer and / .

1 is a cross-sectional view of an anisotropic conductive film 100 having a three-layer structure according to an example of the present invention. Hereinafter, an anisotropic conductive film according to an example of the present invention will be described with reference to FIG.

The anisotropic conductive film according to an example of the present invention is a two-layer structure including a conductive layer 106 and insulating layers 102 and 104 separately and the conductive layer 106 and the insulating layers 102 and 104 are separated from each other, The insulating property can be imparted to the anisotropic conductive film without interfering with the pressing of the conductive particles 108 during the pressing process of the film. An anisotropic conductive film according to an exemplary embodiment of the present invention includes a conductive layer 106 having a first insulating layer 104 laminated on one surface thereof and a second insulating layer 106 stacked on the first insulating layer 104 As a layer structure, it is possible to compensate the fact that the insulating layer in the conventional two-layer structure is constituted by a single layer, and the insulating layer is not sufficiently filled between the terminals.

According to an embodiment of the present invention, a first insulating layer, a conductive layer, and a second insulating layer are sequentially laminated, and the first insulating layer, the second insulating layer, Area basis) and an increase rate of the spreading length in the width direction as measured by the following formula (1) is anisotropic conductive film in which the second insulating layer> the first insulating layer> the conductive layer.

[Formula 1]

(%) = [(Length in the width direction of the layer after compression-length in the width direction of the layer before compression) / length in the width direction of the layer before compression] × 100

The rate of increase of the spreading length of the conductive layer may be greater than 0 and less than 10%, more specifically greater than 0 and less than 6%, more specifically greater than 0 and less than 4%, for example greater than 0 and less than 2 % ≪ / RTI >

In addition, the rate of increase of the spreading length of the first insulating layer may be 5 to 70%, and may be specifically 10 to 60%, more specifically 20 to 60%, for example 20 to 50% .

In addition, the rate of increase of the spreading length of the second insulating layer may be 50 to 200%, specifically 50 to 150%, and may be 60 to 110%.

The flow of the adhesive composition is caused by the heat and pressure applied in the connection process, and thus the spread of the adhesive composition varies depending on the melt viscosity of the respective layers. The insulating layer is uniformly packed within the range of increasing the spreading length of each layer, There is an advantage that it can be improved.

In addition, the difference in the rate of increase of the spreading length of the conductive layer and the rate of increase in the spreading length of the second insulating layer of the present embodiment may be 40 to 200%, specifically 50 to 180%, more preferably 60 to 150% And may be from 70 to 110%.

Since the first insulating layer functions as a bumper despite the difference in the rate of increase of the spreading length of the conductive layer and the second insulating layer, it is possible to realize an anisotropic conductive film having excellent particle collection ratio, There is an advantage.

The greater the difference in the spreading length, the greater the difference in flowability between the layers, that is, the difference in melt viscosity, and the higher the fluidity of the second insulating layer within the difference in the rate of increase of the spreading length of the conductive layer and the second insulating layer The insulating layer can be easily filled between the terminals and the flowability of the conductive layer can be reduced to reduce the outflow of the conductive particles to the space portion, thereby preventing the short circuit.

A non-limiting example of measuring the rate of increase of the spreading length is as follows: A sample 2 mm in the width direction x 20 mm in the length direction is prepared and the glass substrate is placed on top and bottom of the anisotropic conductive film, Temperature standard), 5 seconds, 3 MPa (based on sample area). At this time, the length in the width direction of the layer after compression of the layer in the width direction before compression is measured, and it can be expressed as an increase rate (%) of the spreading length according to Expression 1 with respect to the increased length.

According to another aspect of the present invention, the conductive layer, the first insulating layer, and the second insulating layer include silica, and the content of silica contained in each of the layers is the second insulating layer> the first insulating layer> The average particle diameter of silica contained in each layer may be an anisotropic conductive film in which the second insulating layer> the first insulating layer> the conductive layer.

Hereinafter, the silica contained in each layer will be described.

Silica

The anisotropic conductive film may include insulating particles in order to ensure insulation. Of insulating particles may be inorganic particles, organic particles or organic / inorganic hybrid particle, non-limiting examples of the inorganic particles, silica _{(silica, SiO 2), Al} 2 O 3, TiO 2, ZnO, MgO, ZrO ₂ , PbO, Bi ₂ O ₃ , MoO ₃ , V ₂ O ₅ , Nb ₂ O ₅ , Ta ₂ O ₅ , WO ₃ or In ₂ O ₃ .

In the present invention, silica can be specifically used. The silica may be a silica produced by a vapor phase method such as a silica or flame oxidation method by a liquid phase method such as a sol-gel method or a precipitation method. Non-powder silica in which silica gel is pulverized may be used, or fumed silica ), Fused silica may be used, and the shape thereof may be spherical, crushed, edgeless, and the like, but is not limited thereto.

Specifically, the amount of silica contained in the second insulating layer may be 10 to 50 wt%, more specifically 20 to 30 wt%, based on the total weight of the second insulating layer, The content of silica may be 1 to 30% by weight, more specifically 1 to 20% by weight, based on the total weight of the first insulating layer, and the content of silica contained in the conductive layer may be the same as the total weight of the conductive layer Based on the total weight of the composition, 1 to 20% by weight, more specifically 1 to 15% by weight.

By controlling the melt viscosity of each layer through the content of silica in the above range, the fluidity of each layer can be controlled.

The average particle diameter of the silica contained in each layer may be smaller than that of the conductive particles, and the average of the silica contained in each layer (average particle diameter) The particle diameters can all be different.

Specifically, the average particle diameter of the silica included in the second insulating layer may be more than 100 nm to 1000 nm, specifically, more than 100 nm to 800 nm, more specifically, more than 100 nm to 600 nm, For example, 250 to 350 nm.

In addition, the average diameter of the silica included in the first insulating layer may be more than 10 nm to 100 nm, specifically 20 to 100 nm, and more specifically, 30 to 80 nm.

In addition, the average particle diameter of the silica included in the conductive layer may be 1 nm to 20 nm, specifically 1 to 15 nm, and may be 3 to 10 nm.

It is possible to form an anisotropic conductive film which gives recognition to the anisotropic conductive film by silica and has high connection reliability with the above content and average particle size range.

In order to control the flowability of each layer of the anisotropic conductive film of this embodiment, three types of silica having different specific surface areas may be used.

Specifically, the specific surface area of the silica contained in the second insulating layer may be 1 m ² / g to 50 m ² / g, specifically 1 m ² / g to 40 m ² / g, and 10 m It may be ² / g to 40 m ² / g.

The specific surface area of the silica contained in the first insulating layer may be 50 m ² / g to 200 m ² / g, may be 50 m ² / g to 150 m ² / g, may be 50 m ² / g To 100 m < ² > / g.

The specific surface area of the silica contained in the conductive layer may be 200 m ² / g to 500 m ² / g, may be 200 m ² / g to 400 m ² / g, may be 200 m ² / g to 300 m < ² > / g.

By containing silica having a specific surface area in the above range in each layer, in the case of a layer containing silica having a large size, the specific surface area of silica is reduced, and the desired fluidity can be obtained without interfering with the flowability of the layer The morphological stability of the film can be improved.

Also, by controlling the melt viscosity of the anisotropic conductive film and each layer containing silica in terms of the average particle diameter, specific surface area and content as described above, fluidity can be exhibited in the order of the second insulating layer> the first insulating layer> The two insulating layers are sequentially flowed out (so that the second insulating layer flows out from the second insulating layer having a low melt viscosity and has a good flowability so that the first insulating layer flows out), and the filling of the single insulating layer in the two- Insulation reliability can be improved by supplementing the limit.

The anisotropic conductive film according to an embodiment of the present invention is characterized in that the melt viscosity of each layer at 70 to 90 DEG C according to ARES is the conductive layer> the first insulating layer> the second insulating layer, And may be specifically from 2,000 to 10,000 Pa · s, more specifically from 2,000 to 5,000 Pa · s, for example, from 3,500 to 4,800 Pa · s.

The flowability of the entire anisotropic conductive film can be controlled within the above range, and the connection reliability can be improved.

In general, raising the temperature of the adhesive and the viscosity is the temperature rise by the initial (A ₁ section) gradually decreases, reaches a certain moment (T ₀₎ is melted adhesive is exhibits a viscosity (η ₀₎ of the lowest. When the temperature is further increased, the curing progresses (A ₂ section) and the viscosity gradually increases. When the curing is completed (A ₃ section), the viscosity is kept substantially constant. Viscosity η ₀ at the temperature T ₀ means the "minimum melt viscosity (see Fig. 3).

The "melt viscosity at 70 to 90 캜 according to ARES measurement" in the present invention means the melt viscosity of an arbitrary layer measured by controlling the temperature of any layer measured using ARES (Advanced Rheometric Expansion System) at 70 to 90 캜 Means the melt viscosity, and "minimum melt viscosity" means the lowest melt viscosity value among the melt viscosity values of any layer measured using ARES.

The melt viscosity of the anisotropic conductive film of this embodiment can be controlled not only by the kind and content of the silica contained in each layer but also by the melt viscosity of each layer.

Specifically, the second insulating layer may have a melt viscosity at 70 to 90 ° C of from 1,000 to 10,000 Pa · s, specifically from 1,000 to 7,000 Pa · s, more specifically from 1,000 to 5,000 Pa · s And may be, for example, from 1,000 to 3,000 Pa · s.

The first insulating layer may have a melt viscosity at 70 to 90 캜 of 10,000 to 100,000 Pa · s, specifically 10,000 to 80,000 Pa · s, and more specifically, 30,000 to 80,000 Pa · s For example, from 40,000 to 70,000 Pa · s.

In addition, the conductive layer may have a melt viscosity at 70 to 90 ° C of 100,000 to 1,000,000 Pa · s, specifically 100,000 to 700,000 Pa · s, more specifically 100,000 to 500,000 Pa · s, For example, 200,000 to 400,000 Pa · s.

The flowability of the anisotropic conductive film can be controlled within the above range, the particle capture rate can be improved, and the insulation reliability can be improved and the connection reliability can be improved.

When the silica is contained in each layer in the above range, the melt viscosity can be exhibited within the above range, and the desired fluidity can be obtained without disturbing the flowability of the second insulating layer and the first insulating layer, The flowability of the conductive layer can be reduced, and a short circuit between the terminals can be prevented.

The conductive layer, the first insulating layer and the second insulating layer of the present invention may contain, in addition to the silica, a binder resin, an epoxy resin, and a curing agent, and the conductive layer may include conductive particles. Hereinafter, each component will be described in detail.

Binder resin

The binder resin is not particularly limited, and resins commonly used in the art can be used. Non-limiting examples of the binder resin include polyimide resin, polyamide resin, phenoxy resin, polymethacrylate resin, polyacrylate resin, polyurethane resin, acrylate modified urethane resin, polyester resin, polyester urethane resin , Styrene-butylene-styrene (SBS) resin and epoxy-modified resin, styrene-ethylene-butylene-styrene (SEBS) resin and its modified product, or acrylonitrile butadiene rubber NBR) and a hydrogenated product thereof. These may be used alone or in combination of two or more.

Epoxy resin

The epoxy resin may include at least one of an epoxy monomer, an epoxy oligomer and an epoxy polymer selected from the group consisting of bisphenol type, novolac type, glycidyl type, aliphatic and alicyclic type. As the epoxy resin, there can be used any of known epoxy compounds including at least one bonding structure which can be selected from among molecular structures such as bisphenol type, novolak type, glycidyl type, aliphatic and alicyclic type have.

It is possible to use a solid epoxy resin at room temperature and a liquid epoxy resin at room temperature, and additionally, a flexible epoxy resin can be used in combination. Examples of the epoxy resin which is solid at normal temperature include phenol novolac type epoxy resin, cresol novolac type epoxy resin, epoxy resin having dicyclo pentadiene as a main skeleton, bisphenol A Type or F-type polymer, or a modified epoxy resin, but is not limited thereto.

Examples of the liquid epoxy resin at room temperature include bisphenol A type, F type or mixed epoxy resin, but are not limited thereto.

Non-limiting examples of the flexible epoxy resin include a dimer acid-modified epoxy resin, an epoxy resin having propylene glycol as a main skeleton, and a urethane-modified epoxy resin.

In addition, the aromatic epoxy resin may be at least one selected from the group consisting of naphthalene series, anthracene series and pyrene series resins. However, it is not limited to these, and may be a hydrogenated bisphenol A type epoxy monomer represented by the following formula 2 hydrogenated bisphenol A type epoxy oligomer can be used.

 [Chemical Formula 1]

(2)

For example, in the above formula (2), n is 1 to 50.

The epoxy resin may be contained in the second insulating layer in an amount of 20% by weight to 60% by weight, specifically 35% by weight to 70% by weight, based on the total weight of the solid content of the second insulating layer. , And 35% by weight to 50% by weight.

The first insulating layer may contain 20 wt% to 60 wt%, specifically 30 wt% to 60 wt%, and 30 wt% to 50 wt%, based on the total solid weight of the first insulating layer. % ≪ / RTI > by weight.

The conductive layer may contain 10 wt% to 40 wt%, specifically 10 wt% to 30 wt% of the conductive layer, based on the total weight of the conductive layer.

It is possible to secure an excellent film forming ability and an adhesive force within the above range and to exhibit a melt viscosity suitable for pressure bonding so that it is possible to uniformly press the glass to pressure glass upon pressure application, The reliability can be improved.

Hardener

The curing agent can be used without particular limitation as far as it can cure the binder resin to form an anisotropic conductive film. Examples of the curing agent include acid anhydride, amine, imidazole, isocyanate, amide, hydrazide, phenol, and cation, which may be used alone or in combination . In addition, the form of the curing agent may have a microcapsule shape.

The curing agent may be contained in an amount of 15 to 40% by weight based on the total solid weight of the second insulating layer, more specifically 15 to 30% by weight, for example, 20 to 30% by weight .

The curing agent may be contained in an amount of 1 to 30% by weight based on the total solid weight of the first insulating layer, more specifically 10 to 30% by weight, for example, 20 to 30% by weight .

The curing agent may be contained in an amount of 1 to 30% by weight based on the total weight of the solid content of the conductive layer, and more specifically, 5 to 20% by weight.

It is possible to prevent the hardness of the entire cured product from becoming too high within the above range to prevent deterioration of the interface peeling force and adhesion, and to prevent the stability and reliability of the residual curing agent from being lowered.

Conductive particle

The conductive particles may be contained in the conductive layer for conductivity between the terminals, and the conductive particles used in the present invention are not particularly limited, and the conductive particles conventionally used in the art can be used.

Non-limiting examples of the conductive particles usable in the present invention include metal particles including Au, Ag, Ni, Cu, solder and the like; carbon; Particles comprising a resin including polyethylene, polypropylene, polyester, polystyrene, polyvinyl alcohol or the like and particles of the modified resin coated with a metal such as Au, Ag, Ni or the like; Insulating particles coated with insulating particles, and the like. These may be used alone or in combination of two or more.

The average particle size of the conductive particles may vary depending on the pitch of the applied circuit, and may be selected depending on the application in the range of 1 to 20 mu m. Specifically, the conductive particles having a mean particle size of 1 to 10 mu m Particles can be used.

According to another embodiment of the present invention, the anisotropic conductive film of the present invention may comprise 20 to 60% by weight, specifically 20 to 50% by weight, of the conductive particles with respect to the total weight of the conductive layer, , More specifically from 20 to 40% by weight.

In this range, the conductive particles can be easily pressed between the terminals to ensure stable connection reliability, and the connection resistance can be reduced by improving the electrical conductivity.

In addition, each layer of the anisotropic conductive film of the present embodiment may further include a silane coupling agent to enhance adhesion due to chemical bonding between the surface of the inorganic particles and the organic binder.

Coupling agent

The coupling agent is not particularly limited as long as it is commonly used in the art, for example, a silane coupling agent can be used. Non-limiting examples of the coupling agent include 2- (3,4-epoxycyclo 3-aminopropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, N-2 (aminoethyl) 3-aminopropylmethyldimethoxysilane containing an amine group Aminopropyltrimethoxysilane, N-2 (aminoethyl) 3-aminopropyltrimethoxysilane, N-2 (aminoethyl) , 3-triethoxysilyl-N- (1,3-dimethylbutylidene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, mercapto-containing 3-mercaptopropylmethyldimethoxysilane , 3-mercaptopropyltriethoxysilane, isocyanate-containing 3-isocyanate group Peel tree and the like silane. These may be used singly or in combination of two or more.

Specifically, the second insulating layer may contain 0.01 to 10% by weight, more specifically 0.01 to 5% by weight, based on the total solid weight of the second insulating layer.

The first insulating layer may contain 0.01 to 10% by weight, more specifically 0.01 to 5% by weight, based on the total solid weight of the first insulating layer.

The conductive layer may contain 0.01 to 10% by weight, more specifically 0.01 to 5% by weight, based on the total weight of the conductive layer.

Excellent adhesion reliability can be obtained in the above range.

Other additives

The conductive layer, the first insulating layer and the second insulating layer of the present invention may further contain, in addition to the above-mentioned components, a polymerization inhibitor, a tackifier, and the like in order to additionally impart additional physical properties to the film without impairing the basic properties of the anisotropic conductive film. , An antioxidant, a heat stabilizer, a hardening accelerator, a coupling agent, and the like. In addition, inorganic particles other than silica can be added, and the addition amount of the above-mentioned other additives may vary depending on the use of the film and the desired effect, and the content thereof is not particularly limited, and those having ordinary knowledge in the art .

According to still another aspect of the present invention, an anisotropic conductive film is placed between a first member to be connected and a second member to be connected, pressurized under a pressure condition of 50 to 70 DEG C for 1 to 2 seconds and 1 to 2 MPa; And after the final compression under the pressure conditions of 130 to 170 DEG C for 5 to 7 seconds and 50 to 90 MPa, the anisotropic conductive film is left for 500 hours under the conditions of 85 DEG C and 85% relative humidity, 5 Ω or less.

After this reliability, the connection resistance may be 5 Ω or less, specifically, 3 Ω or less, for example, 2 Ω or less. It is possible to maintain a low connection resistance even under the high temperature and high humidity conditions within the above range, and the connection reliability can be improved.

The post-reliability connection resistance refers to the connection resistance after being left for 500 hours under the conditions of 85 캜 and 85% relative humidity after press bonding and final pressing. The method of measuring the post-reliability connection resistance is not particularly limited and may be measured according to a method commonly used in the art. A non-limiting example of a method for measuring the contact resistance after reliability is as follows: a plurality of film specimens are pressure-bonded and compression-bonded, and then left for 500 hours at a temperature of 85 캜 and a relative humidity of 85% The current is measured by applying a current of 1 mA and calculating the average value of each connection resistance (Keithley 2000 Multimeter, 4-probe method).

The pressurization and final compression conditions were as follows:

1) Pressurizing condition: 60 DEG C, 1 second, 1.0 MPa

2) This pressing condition: 150 DEG C, 5 seconds, 70 MPa

According to another example of the present invention, an anisotropic conductive film is placed between a first member to be connected and a second member to be connected, pressurized under a pressure condition of 50 to 70 DEG C for 1 to 2 seconds and 1 to 2 MPa; And the trapping rate measured after compression at 130 to 170 DEG C for 5 to 7 seconds and 50 to 90 MPa under the pressure condition can be 30 to 80%, specifically 30 to 70% Specifically from 30 to 60%, for example from 40 to 60%.

The conductive particles are sufficiently located on the terminals in the above range, the electric conductivity is improved and the outflow of the conductive particles to the space portion is reduced, so that the inter-terminal short circuit can be reduced.

The anisotropic conductive film according to an exemplary embodiment of the present invention includes a conductive layer 106, a first insulating layer 104 and a second insulating layer 102. The conductive layer 106 includes conductive particles 108 And the first insulating layer 104 and the second insulating layer 102 are electrically connected to each other when the first terminal 202 and the second terminal 302 are pressed together, The first substrate 200 having the first terminal 202 or the second substrate 300 having the second terminal 302 formed thereon is provided so as to contact the adjacent terminals to secure insulation between the adjacent terminals ).

The insulating layers 102 and 104 and the conductive layer 106 of the anisotropic conductive film 100 are pressed during the hot pressing process and the conductive particles 108 are mainly bonded to the first terminal 202, And the second terminal (302).

The particle capture rate refers to the number of conductive particles on the terminal before and after crimping as a percentage. Non-limiting examples of the measurement are as follows: Number of conductive particles on the terminal before crimping (number of particles before crimping) Is calculated by the following equation (1).

[Equation 1]

Number of particles before squeezing = Particle density (number / mm ² ) of conductive particles of conductive layer x area of terminal (mm ² )

Further, the number of conductive particles on the terminal after compression (the number of particles after compression) is counted by a metallurgical microscope and measured, and then the particle capture rate of the conductive particles is calculated by the following equation (2).

&Quot; (2) "

Particle capture rate = (number of particles after compression / number of particles before compression) x 100

The pressurization and final compression conditions were as follows:

1) Pressurizing condition: 60 DEG C, 1 second, 1.0 MPa

2) This pressing condition: 150 DEG C, 5 seconds, 70 MPa

The method of forming the anisotropic conductive film of the present invention is not particularly limited and a method commonly used in the art can be used.

The anisotropic conductive film is formed by dissolving the binder resin in an organic solvent and liquefying it, adding the remaining components thereto, agitating the mixture for a predetermined period of time, and applying the mixture to the release film in an appropriate thickness, for example, 50 탆, and dried for a predetermined time to volatilize the organic solvent, whereby an anisotropic conductive film can be obtained.

According to another aspect of the present invention, there is provided a driver circuit comprising: a driver circuit; panel; And an anisotropic conductive film according to an exemplary embodiment of the present invention. In particular, the panel may be a liquid crystal display (LCD) device, which is a liquid crystal display (LCD) panel. Also, the panel may be an organic light emitting diode (OLED) device, which is an organic light emitting diode (OLED) panel.

The method of manufacturing the display device of the present invention is not particularly limited and may be performed by a method known in the art.

According to still another aspect of the present invention, there is provided a semiconductor device connected with any one of the above-described anisotropic conductive films of the present invention. The semiconductor device includes: a wiring board; A semiconductor chip, and the wiring board and the semiconductor chip are not particularly limited and those known in the art can be used.

The wiring board and the semiconductor chip used in the present invention are not particularly limited, and those known in the art can be used. A circuit or electrodes may be formed on the wiring board by ITO or metal wiring. An IC chip or the like may be mounted on the circuit or electrodes at positions corresponding to the circuits using the anisotropic conductive film according to the embodiments of the present invention. have.

The method of manufacturing the semiconductor device of the present invention is not particularly limited and may be performed by a method known in the art.

Hereinafter, the present invention will be described in more detail by describing Examples, Comparative Examples and Experimental Examples. However, the following examples, comparative examples and experimental examples are merely examples of the present invention, and the present invention should not be construed as being limited thereto.

Example  And Comparative Example

The anisotropic conductive layer, the first insulating layer and the second insulating layer were produced in the compositions and contents as shown in Tables 1 and 2 below. The content of each component contained in each layer is wt%.

Composition and content Example One 2 3 4 Conductive layer Silica (R812) Average particle diameter (nm) 7 7 7 7 Specific surface area (m ² / g) 260 260 260 260 wt% 5 7 9 10 Phenoxy (YP50) wt% 34.9 32.9 30.9 29.9 Hardener wt% 10 10 10 10 Epoxy (HX3941) wt% 20 20 20 20 Conductive particle wt% 30 30 30 30 Silane coupling agent wt% 0.1 0.1 0.1 0.1 Melting point (Pa.s) 280K 320K 330K 330K The first insulating layer Silica (Sciqas) Average particle diameter (nm) 50 50 50 50 Specific surface area (m ² / g) 60 60 60 60 wt% 7 10 12 14 Phenoxy (YP50) wt% 19 16 14 12 Hardener wt% 25 25 25 25 Epoxy (HX3941) wt% 48.9 48.9 48.9 48.9 Silane coupling agent wt% 0.1 0.1 0.1 0.1 Melting point 54K 61K 65K 66K The second insulating layer Silica (EMIX) Average particle diameter (nm) 300 300 300 300 Specific surface area (m ² / g) 25 25 25 25 wt% 16 18 20 23 Phenoxy (YP50) wt% 19 17 15 12 Hardener wt% 22 22 22 22 Epoxy (HX3941) wt% 42.9 42.9 42.9 42.9 Silane coupling agent wt% 0.1 0.1 0.1 0.1 Melting point (Pa.s) 1.5K 1.8K 1.9K 2.3K The melt viscosity (Pa.s) of the three-layer ACF 3.5K 4.3K 4.1K 4.8K

Comparative Example One 2 3 4 Conductive layer Silica Average particle diameter (nm) 300 300 50 50 wt% 21 21 8 8 Phenoxy (YP50) wt% 12 12 15 15 Hardener wt% 13 13 17 17 Epoxy (HX3941) wt% 27.9 27.9 34.9 34.9 Conductive particle  wt% 30 30 30 30 Silane coupling agent wt% 0.1 0.1 0.1 0.1 Melting point (Pa.s) 3.2K 2.8K 58K 62K The first insulating layer Silica Average particle diameter (nm) 50 7 300 7 wt% 7 4 20 4 Phenoxy (YP50) wt% 19 21 17 21 Hardener wt% 25 25 21 25 Epoxy (HX3941) wt% 48.9 49.9 41.9 49.9 Silane coupling agent wt% 0.1 0.1 0.1 0.1 Melting point (Pa.s) 58K 290K 3.4K 320K The second insulating layer Silica Average particle diameter (nm) 7 50 7 300 wt% 4 7 4 19 Phenoxy (YP50) wt% 21 19 21 17 Hardener wt% 25 25 25 25 Epoxy (HX3941) wt% 49.9 48.9 49.9 42.9 Silane coupling agent wt% 0.1 0.1 0.1 0.1 Melting point 290K 58K 290K 3.4K The melt viscosity (Pa.s) of the three-layer ACF 265K 62K 268K 4.9K

Phenoxy resin: (manufactured by Shinil Chemical Co., Ltd., product name: YP50)

Hardener: (manufactured by Asahi Kasei, product name: HX 3941)

Epoxy: (manufactured by Dainippon Ink and Chemicals, product name: HP4032D)

A first insulating layer (manufactured by SAKAI CHEMICAL, product name: Sciqas), a conductive layer (manufactured by Degussa Co., Ltd., product name: R812)

Conductive particles: 3 mu m of conductive particles (manufactured by SEKISUI, product name: AUEL003)

Silane coupling agent: (manufactured by ShinYeatsu, product name: KBM403)

Example  One

Conductive layer  Preparation of composition

20% by weight of phenoxy resin (trade name: YP50, manufactured by Shinil Chemical Co., Ltd. under the trade name of YP50) and 20% by weight of an epoxy resin (manufactured by Dainippon Ink and Chemicals Inc., product name: HP4032D) were mixed and stirred for 5 minutes using a C- (Trade name: SEKISUI, product name: AUEL003) and a silane coupling agent (manufactured by ShinYeatsu, product name: KBM403) were added in an amount of 10 wt% And the mixture was stirred for 1 minute using a C-mixer (provided that the temperature in the solution was not higher than 60 占 폚) to form a conductive layer composition

1st Insulating layer  Preparation of composition

In the preparation of the conductive layer composition, the kind and content of the phenoxy resin, the epoxy resin, the curing agent, the silica and the coupling agent were adjusted as shown in Table 1, and the first insulating layer composition .

Second Insulating layer  Preparation of composition

In the preparation of the conductive layer composition, the kind and content of the phenoxy resin, the epoxy resin, the curing agent, the silica and the coupling agent were adjusted as shown in Table 1, and the second insulating layer composition .

Anisotropy  Production of conductive film

The anisotropic conductive adhesive layer composition was agitated at room temperature (25 DEG C) for 60 minutes in a speed range in which conductive particles were not crushed. The adhesive layer composition was formed into a film having a thickness of 35 탆 on a polyethylene base film subjected to a silicone releasable surface treatment, and a casting knife was used to form the film. The film was dried at 60 캜 for 5 minutes, , And an anisotropic conductive film having a melt viscosity of 3500 Pa 占 퐏 at 80 占 폚 was prepared.

Example  2

The components and the contents of the respective layers in Example 1 were adjusted as shown in Table 1 and the melt viscosity of each layer at 80 캜 was measured in the same manner as in Table 1 using the same conditions and methods as in Example 1, Of 4300 Pa 占 퐏 was produced.

Example  3

The components and the contents of the respective layers in Example 1 were adjusted as shown in Table 1 and the melt viscosity of each layer at 80 캜 was measured in the same manner as in Table 1 using the same conditions and methods as in Example 1, Of an isotropic conductive film having a melt viscosity of 4100 Pa · s.

Example  4

The components and the contents of the respective layers in Example 1 were adjusted as shown in Table 1 and the melt viscosity of each layer at 80 캜 was measured in the same manner as in Table 1 using the same conditions and methods as in Example 1, Of an isotropic conductive film having a melt viscosity of 4800 Pa · s.

Comparative Example  One

The component and the content of each layer in Example 1 were adjusted as shown in Table 2 and the melt viscosity of each layer at 80 캜 was measured under the same conditions and the same method as in Example 1, Of an isotropic conductive film having a melt viscosity of 265000 Pa 占 퐏.

Comparative Example  2

The component and the content of each layer in Example 1 were adjusted as shown in Table 2 and the melt viscosity of each layer at 80 캜 was as shown in Table 2 using the same conditions and method as in Example 1, Of an isotropic conductive film having a melt viscosity of 62000 Pa 占 퐏.

Comparative Example  3

The component and the content of each layer in Example 1 were adjusted as shown in Table 2 and the melt viscosity of each layer at 80 캜 was measured under the same conditions and the same method as in Example 1, Of an isotropic conductive film having a melt viscosity of 268,000 Pas.

Comparative Example  4

The component and the content of each layer in Example 1 were adjusted as shown in Table 2 and the melt viscosity of each layer at 80 캜 was measured under the same conditions and the same method as in Example 1, Of an isotropic conductive film having a melt viscosity of 4900 Pa · s.

Experimental Example  One

Spread length  Increase rate measurement

The following methods were performed to measure the rate of increase of the spreading length of the anisotropic conductive film produced in the Examples and Comparative Examples.

A sample having a width of 2 mm and a length of 20 mm was prepared, and the glass substrate was placed on top and bottom of the anisotropic conductive film. Then, under the conditions of 150 캜 (sensing temperature of anisotropic conductive film), 5 seconds, 3 MPa Respectively.

At this time, the length in the width direction of the layer after compression of the layer in the width direction before compression can be measured, and can be expressed as an increase rate (%) of the spreading length according to the following formula 1 with respect to the increased length.

[Formula 1]

(%) = [(Length in the width direction of the layer after compression-length in the width direction of the layer before compression) / length in the width direction of the layer before compression] × 100

The measurement results are shown in Table 3 below.

Experimental Example  2

Initial connection resistance measurement

The following methods were performed to measure the initial connection resistance of the anisotropic conductive films produced in the Examples and Comparative Examples.

The anisotropic conductive films prepared in the above Examples and Comparative Examples were subjected to pressure bonding and final pressing under the following conditions, and a test current of 1 mA was applied in a 4-probe manner using a measuring instrument (Keithley 2000 Multimeter) And the average value thereof was calculated.

1) Pressurizing condition: 60 DEG C, 1 second, 1.0 MPa

2) This pressing condition: 150 DEG C, 5 seconds, 70 MPa

The measurement results are shown in Table 3 below.

Experimental Example  3

Reliability after connection resistance measurement

The following methods were performed to measure the reliability of the anisotropic conductive film after the reliability test in Examples and Comparative Examples.

After subjected to pressurization and final compression under the conditions of Experimental Example 2, they were allowed to stand for 250 hours at a temperature of 85 캜 and a relative humidity of 85% to carry out a high-temperature and high-humidity reliability evaluation. 2. ≪ / RTI >

The measurement results are shown in Table 3 below.

Experimental Example  4

Particle capture rate  Measure

The following methods were performed to measure the particle capture rate of the anisotropic conductive film produced in the Examples and Comparative Examples.

The number of conductive particles on the terminal before the anisotropic conductive film is squeezed (the number of particles before squeezing) is calculated by the following equation (1).

[Equation 1]

Number of particles before squeezing = Particle density (number / mm ² ) of conductive particles of conductive layer x area of terminal (mm ² )

 Further, after the anisotropic conductive film was measured for the number of conductive particles (the number of particles after compression) on the terminal after press bonding under the pressurization and main compression conditions described below by a metallurgical microscope, Is calculated.

&Quot; (2) "

Particle capture rate = (number of particles after compression / number of particles before compression) x 100

The conditions of pressurization and final pressing are as follows.

1) Pressurizing condition: 60 DEG C, 1 second, 1.0 MPa

2) This pressing condition: 150 DEG C, 5 seconds, 70 MPa

The measurement results are shown in Table 3 below.

The results of Experimental Examples 1 to 4 are shown in Table 3 below .

Width growth rate (%) Connection resistance (Ω) Particle capture rate (%) Conductive layer The first insulating layer The second insulating layer Early After reliability Example 1 0.4 30.5 86.5 0.86 1.45 46 Example 2 1.3 31.2 92.9 0.88 1.88 52 Example 3 0.4 28.3 83.2 0.94 1.87 48 Example 4 0.2 20.6 96.4 0.99 1.67 50 Comparative Example 1 125.3 28.3 20.3 0.64 5.84 27 Comparative Example 2 83.2 25.4 25.8 0.67 6.94 26 Comparative Example 3 45.2 96.3 10.3 0.77 5.84 31 Comparative Example 4 35.7 23.7 28.2 0.78 7.34 32

Referring to Table 2, when the growth rate of the spreading length is the second insulating layer> the first insulating layer> the conductive layer, the content of silica contained in each layer is the same as that of the second insulating layer> the first insulating layer> Or when the melt viscosity of each layer is the conductive layer> the first insulating layer> the second insulating layer and the melt viscosity at 70 to 90 ° C according to the ARES measurement of the anisotropic conductive film is 1,000 to 20,000 Pa · s (Example 1 To 4). As a result, the melt viscosity of each layer was appropriately adjusted, sufficient insulation reliability could be ensured, and the post-reliability connection resistance was 5 Ω or less, which confirmed that the connection reliability was also excellent.

In addition, when the rate of increase of the spreading length was controlled in the layer order, the particle trapping rate was confirmed to be 30 to 80%. It can be predicted that the conductivity of the semiconductor device connected by the anisotropic conductive films of Examples 1 to 4 showing the range of the particle capture rate is excellent.

On the other hand, when the relative increase in the spreading length and / or relative viscosity of the respective layers does not correspond to the second insulating layer> the first insulating layer> the conductive layer (Comparative Examples 1 to 4), the reliability after- And not only the connection reliability was lowered but also the particle capture rate was found to be lower than those of Examples 1 to 4.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that such detail is solved by the person skilled in the art without departing from the scope of the invention. will be. Accordingly, the actual scope of the present invention will be defined by the appended claims and their equivalents.

100 anisotropic conductive film
102 second insulating layer
104 first insulating layer
106 conductive layer
108 conductive particles
110 silica
200 first substrate
202 first terminal
300 second substrate
302 second terminal

Claims (16)

A conductive layer, a first insulating layer, and a second insulating layer are sequentially laminated,
The increase rate of the spreading length in the width direction as expressed by the following formula 1 measured after compression at 110 to 200 占 폚 (based on an anisotropic conductive film sensing temperature), 3 to 7 seconds, and 1 to 7 MPa Insulating layer > first insulating layer > conductive layer,
Wherein the conductive layer, the first insulating layer, and the second insulating layer each comprise silica,
An average particle diameter of the silica contained in each of the layers is the second insulating layer> the first insulating layer> the conductive layer. Anisotropic conductive film:
[Formula 1]
(%) = [(Length in the width direction of the layer after compression - length in the width direction of the layer before compression) / length in the width direction of the layer before compression] × 100. A conductive layer, a first insulating layer, and a second insulating layer are sequentially laminated,
Wherein the conductive layer, the first insulating layer and the second insulating layer each comprise silica,
The content of silica contained in each layer is the second insulating layer> the first insulating layer> the conductive layer,
The average particle diameter of the silica contained in each layer is the second insulating layer> the first insulating layer> the conductive layer,
The melt viscosity of each of the layers at 70 to 90 DEG C according to the ARES measurement is the conductive layer> the first insulating layer> the second insulating layer,
Wherein the anisotropic conductive film has a melt viscosity of 1,000 to 20,000 Pa · s at 70 to 90 ° C according to ARES measurement. delete 3. The method of claim 2,
The increase rate of the spreading length in the width direction as expressed by the following formula 1 measured after compression at 110 to 200 占 폚 (based on an anisotropic conductive film sensing temperature), 3 to 7 seconds, and 1 to 7 MPa Insulating layer> First insulating layer> Anisotropic conductive film which is a conductive layer.
[Formula 1]
(%) = [(Length in the width direction of the layer after compression-length in the width direction of the layer before compression) / length in the width direction of the layer before compression] × 100 The method according to claim 1 or 4, wherein an increase rate of the spreading length of the conductive layer is greater than 0 and less than 10%, and an increase rate of the spreading length of the first insulating layer is 5 to 70% And an increase rate of the spreading length is 50 to 200%. The anisotropic conductive film according to any one of claims 1 to 4, wherein a difference between an increase rate of the spreading length of the conductive layer and an increase rate of the spreading length of the second insulating layer is 40 to 200%. The anisotropic conductive film according to claim 1, wherein the content of silica contained in each layer is a second insulating layer> a first insulating layer> a conductive layer. 8. The method according to claim 7, wherein the amount of silica contained in the second insulating layer is 10 to 50% by weight based on the total weight of the second insulating layer, Based on the total weight of the layer solid content, and the content of silica in the conductive layer is 1 to 20 wt% based on the total weight of the conductive layer solid content. delete The method of claim 1, wherein the average diameter of the silica included in the second insulating layer is more than 100 nm to 1000 nm, the average diameter of the silica included in the first insulating layer is more than 10 nm to 100 nm, Wherein an average particle diameter of the silica contained in the layer is 1 nm to 20 nm. The method according to claim 7, wherein the specific surface area of silica contained in the second insulating layer is 1 m ² / g to 50 m ² / g, the specific surface area of silica contained in the first insulating layer is 50 m ² / g To 200 m ² / g, and the specific surface area of silica contained in the conductive layer is 200 m ² / g to 500 m ² / g. 3. The method according to claim 1 or 2, wherein the second insulating layer has a melt viscosity of 1,000 to 10,000 Pa · s at 70 to 90 ° C according to ARES measurement, and the first insulating layer has a melt viscosity of 10,000 to 100,000 Pa · S, and the conductive layer has a melt viscosity of 100,000 to 1,000,000 Pa · s. The method of manufacturing a connector according to claim 1 or 2, wherein the anisotropic conductive film is positioned between the first connected member and the second connected member,
Pressing at 50 to 70 DEG C for 1 to 2 seconds and under pressure of 1 to 2 MPa; And
After final compression at 130 to 170 DEG C for 5 to 7 seconds and 50 to 90 MPa pressure,
Wherein the anisotropic conductive film is allowed to stand for 500 hours under the conditions of 85 캜 and 85% relative humidity, and the measured reliability after connection resistance is 5 Ω or less. The method of manufacturing a connector according to claim 1 or 2, wherein the anisotropic conductive film is positioned between the first connected member and the second connected member,
Pressing at 50 to 70 DEG C for 1 to 2 seconds and under pressure of 1 to 2 MPa; And
Wherein the particles have a trapping rate of 30 to 80% as measured after compression at 130 to 170 DEG C for 5 to 7 seconds and 50 to 90 MPa under the final compression conditions. Driver circuit;
panel; And
A display device comprising the anisotropic conductive film of any one of claims 1, 2, 4, 7, 8, 10, 11. A semiconductor device connected by the anisotropic conductive film of any one of claims 1, 2, 4, 7, 8, 10, 11.

Images