KR101943718B1 - Anisotropic conductive film and the interconnect using thereof - Google Patents
Anisotropic conductive film and the interconnect using thereof Download PDFInfo
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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Abstract
The present invention relates to an anisotropic conductive film which can prevent short-circuiting by controlling the density of conductive particles pressed on electrode portions between electrodes and the density of conductive particles in a space portion, .
Description
The present invention relates to an anisotropic conductive film and connections using the same.
Anisotropic conductive film (ACF) is a film obtained by dispersing conductive particles such as metal particles such as nickel (Ni) and gold (Au), or polymer particles coated with such metals in a resin such as epoxy Refers to a film-like adhesive, which means a polymer film having electric anisotropy and adhesive property which has conductivity in the thickness direction of the film and insulating property in the surface direction.
When the anisotropic conductive film is placed between the circuits to be connected and subjected to a heating and pressing process under a certain condition, the space between the circuit electrodes is electrically connected by the conductive particles, ) Portion is filled with an insulating adhesive resin so that the conductive particles exist independently of each other, thereby giving a high insulating property.
The conductive particles are pressed and developed in the process of connecting the electrodes through the hot pressing process. At this time, the flow of the adhesive composition including the conductive particles occurs due to heat and pressure in the hot pressing process, The particles can not be positioned between the circuit electrodes, and there is a problem that the particle efficiency for expressing the connection characteristics between the electrodes is extremely low. In addition, there is a problem that a part of the adhesive composition containing the conductive particles flows into the adjacent space (space part), and the conductive particles collect in a narrow area, causing a short or a connection resistance.
As a prior art for controlling the fluidity of the layer containing the conductive particles, Korean Patent Laid-Open No. 10-2012-0122943 discloses a method for controlling the flowability of a layer containing a conductive particle by controlling the weight of a film forming resin and a radical polymerizing resin, In addition, although the flow of the composition is reduced by varying the thickness of the layer, the present invention does not disclose an ultra low flow anisotropic conductive film in which the content of insulating particles is controlled.
An object of the present invention is to provide an ultra low flow anisotropic conductive film capable of improving the density of conductive particles pressed onto the electrode portion between electrodes after the hot pressing process and preventing the shortening of the density of conductive particles in the space portion, Thereby providing a connection to be used.
The present invention also provides an ultra low flow anisotropic conductive film having improved cost reduction and connection characteristics by controlling the density of conductive particles in the electrode portion and the density of conductive particles in the space portion.
The present invention provides an ultra low flow anisotropic conductive film having improved connection characteristics by controlling the content of inorganic particles and a connection using the anisotropic conductive film.
According to an embodiment of the present invention, the ratio (X: Y) of the electrode portion conductive particle density X to the space portion conductive particle density Y is 1: 1 to 1:10, and X is an anisotropic conductive film An IC driver chip or an IC chip including a glass substrate including a first electrode and a second electrode and is pressurized at a temperature of 50 DEG C to 90 DEG C for 1 second to 5 seconds and 1.0 MPa to 5.0 MPa And Y is the density of the conductive particles pressed between the first electrode and the second electrode measured after the final pressing under the condition of 170 占 폚 to 190 占 폚 for 5 seconds to 7 seconds and 60 MPa to 80 MPa, Which is the density of the conductive particles present in the space portion measured after the main compression.
Further, according to another example of the present invention, an anisotropic conductive film containing 5% by weight to 20% by weight of all conductive particles based on the total weight of solids; And an insulating layer formed on one surface or both surfaces of the conductive layer, wherein the content (wt%) of the conductive particles and the insulating particles contained in the conductive layer is included in the insulating layer (% By weight) of the insulated particles.
According to another embodiment of the present invention, there is provided a plasma processing apparatus comprising: a first connected member containing a first electrode; A second connected member containing a second electrode; And an anisotropic conductive film according to an example of the present invention, wherein the anisotropic conductive film is disposed between the first connected member and the second connected member and connects the first electrode and the second electrode , And a connection.
The present invention not only provides an anisotropic conductive film comprising a conductive layer exhibiting ultra low flowability by controlling the content of insulating particles but also shows an effect of preventing shorting of electrodes by improving the flow of the insulating layer composition .
Further, the present invention has the effect of improving the connection characteristics of the anisotropic conductive film by controlling the density of the conductive particles in the electrode portion and the density of the conductive particles in the space portion.
1 shows a connection connected by an anisotropic conductive film according to an example of the present invention.
2 is a photomicrograph showing the electrode part A and the space part B and shows a state where the conductive particles 1 'pressed on the electrode A and the conductive particles 1''').
3 is a photomicrograph showing a conductive particle 1 "existing in the space portion B without enlarging the space portion B of the micrograph of FIG.
Hereinafter, the present invention will be described in more detail. Those skilled in the art will appreciate that various modifications, additions, and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. The terms " comprises " and / or " comprising ", when used in this specification, do not exclude the presence of stated elements or steps.
1, a connection according to the present invention will be described.
The second connected
Specifically, the connection is such that one surface of the anisotropic
The first and second connected members are not particularly limited, and those known in the art can be used.
For example, the first connected member may be a glass substrate, a printed circuit board (PCB), or a flexible printed circuit board (fPCB), and the second connected member may be a semiconductor silicon chip, film, an IC chip, or an IC driver chip.
The first electrode or the second electrode may be in the form of a protruding electrode or a planar electrode. The first electrode or the second electrode may be formed of indium tin oxide (ITO), copper, silicon, or indium zinc oxide ), But is not limited thereto.
Further, the method of manufacturing the connection according to one example of the present invention is not particularly limited, and may be performed by a method known in the art.
According to an embodiment of the present invention, the ratio (X: Y) of the electrode portion conductive particle density X to the space portion conductive particle density Y is 1: 1 to 1:10, and X is an anisotropic conductive film An IC driver chip or an IC chip including a glass substrate including a first electrode and a second electrode and is pressurized at a temperature of 50 DEG C to 90 DEG C for 1 second to 5 seconds and 1.0 MPa to 5.0 MPa And Y is the density of the conductive particles pressed between the first electrode and the second electrode measured after the final pressing under the condition of 170 占 폚 to 190 占 폚 for 5 seconds to 7 seconds and 60 MPa to 80 MPa, Which is the density of the conductive particles existing in the space portion measured after the final compression bonding.
Specifically, the X: Y may be from 1: 1 to 1: 9, from 1: 1 to 1: 8, from 1: 1 to 1: 7, : 6, and may be from 1: 1 to 1: 5, for example from 1: 1 to 1: 4.
The closer the density ratio is to 1: 1, the less the outflow of the conductive particles to the space portion means the ultra-low fluidity, so that the flow of the electrode shots or the insulating layer composition can be improved within the density range.
During the pressing process, the conductive particles are mainly located between the first electrode and the second electrode (electrode portion) and are pressed (A). At this time, flow of each layer occurs due to the heat and pressure applied in the connection process, and conductive particles (B) flowing out to a side space (space portion) where the first electrode and the second electrode are not opposed .
At this time, the density (number / 탆 2 ) of the conductive particles (B) present in the space portion without being pressed against the conductive particles (A) present in the electrode portion between the first electrode and the second electrode, X and Y can be respectively measured to calculate the density ratio (X: Y) (see FIGS. 2 and 3).
Specifically, the pressing temperature may be 50 to 80 캜, for example, 50 to 70 캜, and the pressing time may be 1 to 3 seconds, for example, 1 to 2 seconds, The optical pressure condition may be 1.0 MPa to 3.0 MPa, for example, 1 MPa to 2 MPa.
Specifically, the final pressing temperature may be 175 ° C to 185 ° C, the final pressing time may be 5.5 seconds to 6.5 seconds, and the final pressing pressure may be 65 MPa to 75 MPa.
(X: Y) of the density (X) of the conductive particles which are pressed between the first electrode and the second electrode by the connection and exist in the electrode portion and the density (Y) of the conductive particles existing in the space portion, ) a non-limiting example of a method of measuring are as follows: each of the anisotropic conductive film, the bump area 2000㎛ 2, the glass substrate and the bump area with indium tin oxide (ITO) circuit having a thickness of 5000Å 2000㎛ 2, thickness 1.7 Mm by using an IC chip under pressure under the following conditions.
1) 50 to 90 DEG C for 1 second to 5 seconds, 1.0 MPa to 5.0 MPa pressure condition
2) 170 to 190 占 폚, 5 seconds to 7 seconds, 60 MPa to 80 MPa final compression conditions
After the compression, the number of bump particles per unit area (탆 2 ) and the number of particles present in the space between the electrodes were observed by a microscope, and the respective densities X and Y were measured to determine the density ratio (X: Y) .
In addition, in an example of the present invention, an anisotropic conductive film is placed between a COF, an IC driver chip or an IC chip including a glass substrate including a first electrode and a second electrode, And the connection resistance of the anisotropic conductive film measured after the final compression under the conditions of 170 to 190 DEG C, 5 to 7 seconds, and 60 MPa to 80 MPa was 0.5 OMEGA And more specifically, may be more than 0? To 0.5? And may be, for example, more than 0? To less than 0.3?.
The specific conditions of the pressurization and final compression are substantially the same as those mentioned in the density ratio (X: Y) measurement method of the above-mentioned conductive particles, and will not be described below.
Since the first electrode and the second electrode are substantially the same as those described above, the related description is omitted.
The signal interference of the fine pitch electrode can be prevented in the above range.
The method for measuring the connection resistance is not particularly limited, and examples thereof are as follows. Each of the anisotropic conductive films is left at room temperature (25 DEG C) for 1 hour, The upper and lower interfaces of the anisotropic conductive film were measured by COF (Samsung Electronics Co., Ltd.) having a four-terminal measurable pattern formed on a patternless glass at 180 deg. C for 6 seconds, 70 MPa, and each of the seven specimens is prepared. Each of the seven test specimens is measured by a point probe method (ASTM F43-64T) five times, and the average value is calculated.
The anisotropic conductive film included in the connection according to an example of the present invention was subjected to pressure bonding and final compression bonding under the same conditions and in the same manner as the method for measuring the connection resistance under the conditions of a temperature of 85 DEG C and a relative humidity of 85% After the reliability evaluation as measured by leaving it, the connection resistance can be 7 Ω or less. Specifically, it may be more than 0? To 6?, More specifically more than 0? 5 ?, for example may be more than 0? To 4?.
The anisotropic conductive film included in the connection according to an example of the present invention is subjected to pressurization and pressure bonding under the same conditions and in the same manner as the above-mentioned connection resistance measuring method, for 500 hours at a temperature of 85 DEG C and a relative humidity of 85% After the reliability evaluation as measured by leaving, the connection resistance may be 15 Ω or less. Specifically, it may be more than 0? To 10?, More specifically more than 0? To 7?.
It is possible to maintain the low connection resistance even under the high temperature and high humidity conditions in the above range and to improve the connection reliability as well as to provide the connection connected by the anisotropic conductive film having the stable reliability resistance, Can be used for a long period of time.
The method for measuring the connection resistance after the reliability evaluation is not particularly limited, and a non-limiting example is as follows: After performing press bonding and final pressing under the conditions of the connection resistance measurement, 250 Hours and 500 hours to conduct a high-temperature / high-humidity reliability evaluation, and after each reliability evaluation, the connection resistance is measured and an average value is calculated.
Hereinafter, an anisotropic conductive film for connecting a connection according to an example of the present invention will be described in detail.
According to another embodiment of the present invention, the anisotropic conductive film includes a conductive layer containing conductive particles; And an insulating layer.
Specifically, the conductive layer includes conductive particles to electrically connect the first electrode and the second electrode during the main pressing, and the insulating layer contains no conductive particles, and the first substrate having the first electrode formed thereon And is arranged to contact the second substrate on which the second electrode is formed so as to secure insulation between adjacent electrodes.
The anisotropic conductive film according to an exemplary embodiment of the present invention may have a structure in which an insulating layer is laminated on one side or both sides of a conductive layer. That is, a two-layer structure in which a conductive layer and an insulating layer are laminated, or a three-layer structure in which a conductive layer is laminated on an insulating layer and an insulating layer is laminated on the conductive layer. Lt; / RTI > stacked layer structure.
The term " lamination " means that another layer is formed on one side of an arbitrary layer and can be used in combination with coating or lamination.
In the case of an anisotropic conductive film having a multi-layered structure including a conductive layer and an insulating layer separately, since the layer is separated, even if the content of insulating particles (e.g., silica) is high, it does not interfere with the pressing of the conductive particles, And the flowability of the adhesive composition can be influenced, so that an ultra low flow anisotropic conductive film can be produced.
The lowest melt viscosity of the conductive layer included in the anisotropic conductive film according to an exemplary embodiment of the present invention may be higher than the lowest melt viscosity of the insulating layer included in the anisotropic conductive film. The minimum melt viscosity of the conductive layer may be in the range of 10 3 Pa · s to 10 7 Pa · s and may be in the range of 10 5 Pa · s to 10 6 Pa · s.
In the above range, the outflow of the conductive particles in the conductive layer can be reduced by the space between the electrodes in the pressing process, so that the connection resistance can be improved and the insulation reliability between the terminals can be sufficiently filled,
In addition, the minimum melt viscosity of the insulating layer may be lower than the lowest melt viscosity of the conductive layer, and specifically, the minimum melt viscosity of the insulating layer may be 10 2 Pa · s to 10 4 Pa · s. The flow of particles of the conductive layer due to the influence of the flow of the insulating layer in the above range is prevented, thereby improving the connection resistance and preventing the short circuit.
Hereinafter, the minimum melt viscosity of the anisotropic conductive film according to one example of the present invention will be described.
In general, when the temperature of the adhesive is increased, the viscosity gradually decreases due to the temperature rise in the initial section, and at any moment (T 0 ), the adhesive is melted to exhibit the lowest viscosity (? 0 ). When the temperature is further increased, the curing progresses and the viscosity gradually increases. When the curing is completed, the viscosity is kept substantially constant. The viscosity at the temperature T 0 η 0 means "lowest melt viscosity".
As used herein, the term " minimum melt viscosity " means the lowest melt viscosity value among the melt viscosity values of any layer measured using ARES (Advanced Rheometric Expansion System).
The lowest melt viscosity of each layer can be controlled by the composition of each layer and can be controlled by the content of insulating particles in detail.
Hereinafter, the components of the respective layers of the anisotropic conductive film according to one example of the present invention will be described in more detail. The conductive layer according to an example of the present invention may include a binder resin, an epoxy resin, a curing agent, conductive particles and insulating particles, and the insulating layer may include a binder resin, an epoxy resin, a curing agent, and insulating particles.
First, the binder resin, epoxy resin, curing agent and insulating particles which are commonly contained in each layer will be described in detail.
Binder resin
The binder resin used in one example of the present invention is not particularly limited, and resins commonly used in the art can be used.
Non-limiting examples of the binder resin include polyimide resin, polyamide resin, phenoxy resin, polymethacrylate resin, polyacrylate resin, polyurethane resin, polyester resin, polyester urethane resin, polyvinyl butyral resin , Styrene-butylene-styrene (SBS) resin and epoxy-modified resin, styrene-ethylene-butylene-styrene (SEBS) resin and modified resin thereof, acrylonitrile butadiene rubber (NBR) And the like. These resins may be used alone or in admixture of two or more. Specifically, a resin compatible with an epoxy resin may be used. For example, a phenoxy resin may be used.
The binder resin may be contained in an amount of 1% by weight to 60% by weight, specifically 1% by weight to 50% by weight, more specifically 5% by weight to 40% by weight, , For example from 10% to 30% by weight.
The conductive layer may be contained in an amount of 1% by weight to 50% by weight, specifically 5% by weight to 50% by weight, more specifically 5% by weight to 40% by weight, For example, from 5% to 30% by weight.
The flowability and adhesion of the layer can be improved and the melt viscosity of each layer can be controlled.
Epoxy resin
The epoxy resin may include at least one of an epoxy monomer, an epoxy oligomer and an epoxy polymer selected from the group consisting of bisphenol type, novolac type, glycidyl type, aliphatic and alicyclic type. As the epoxy resin, there can be used any of known epoxy compounds including at least one bonding structure which can be selected from among molecular structures such as bisphenol type, novolak type, glycidyl type, aliphatic and alicyclic type have.
It is possible to use a solid epoxy resin at room temperature and a liquid epoxy resin at room temperature, and additionally, a flexible epoxy resin can be used in combination. Examples of the epoxy resin which is solid at normal temperature include phenol novolac type epoxy resin, cresol novolac type epoxy resin, epoxy resin having dicyclo pentadiene as a main skeleton, bisphenol A Type or F-type polymer, or a modified epoxy resin, but is not limited thereto.
Examples of the liquid epoxy resin at room temperature include bisphenol A type, F type or mixed epoxy resin, but are not limited thereto.
Non-limiting examples of the flexible epoxy resin include a dimer acid-modified epoxy resin, an epoxy resin having propylene glycol as a main skeleton, and a urethane-modified epoxy resin.
In addition, the aromatic epoxy resin may include at least one selected from the group consisting of naphthalene, anthracene, and pyrene resins. However, the present invention is not limited thereto. Specifically, the epoxy resin and the slow epoxy resin Can be used.
The epoxy resin may be contained in an amount of 10% by weight to 80% by weight, specifically 20% by weight to 80% by weight, more preferably 30% by weight to 80% by weight, , For example from 40% to 60% by weight.
The conductive layer may be contained in an amount of 1% by weight to 50% by weight, specifically 5% by weight to 50% by weight, more specifically 5% by weight to 40% by weight, For example, from 5% to 30% by weight.
It is possible to ensure an excellent film forming force and an adhesive force within the above range and to secure the lowest melt viscosity suitable for ensuring the density ratio according to one example of the present invention.
Hardener
The curing agent may be any type of epoxy curing type hardener known in the art without any particular limitation, and examples thereof include acid anhydride, amine, imidazole, isocyanate, amide, hydrazide, Cationic system, etc. These may be used alone or in combination of two or more.
According to one embodiment of the present invention, the curing agent may be a cationic type, for example, ammonium / antimony hexafluoride.
Since the curing agent is used in combination with an epoxy resin at room temperature, it must not react with the epoxy resin at room temperature after mixing, and it must be activated at a certain temperature or higher to actively react with the epoxy resin to exhibit physical properties.
The curing agent may be any compound capable of generating a cation by thermal activation energy without limitation, for example, a cationic latent curing agent may be used.
Specifically, examples of the cationic latent curing agent include onium salt compounds such as aromatic diazonium salts, aromatic sulfonium salts, aliphatic sulfonium salts, aromatic iodo aluminum salts, phosphonium salts, pyridinium salts and cerenonium salts; Metal arene complexes, silanol / aluminum complexes and the like; Benzoin tosylato-, ortho-Nitrobenzyl tosylato-, and other compounds having an electron-trapping action can be used.
More specifically, a sulfonium salt compound such as an aromatic sulfonium salt compound or an aliphatic sulfonium salt compound having a high cation generation efficiency can be used.
When such a cationic latent curing agent has a salt structure, hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, pentafluorophenylborate, or the like is used as a counter ion in forming a reactive side salt .
The curing agent may be contained in an amount of 1 to 30% by weight based on the total weight of the solid content of the insulating layer, specifically 1 to 20% by weight, more specifically 1 to 10% ≪ / RTI >
The curing agent may be contained in an amount of 1% by weight to 30% by weight based on the total weight of the solid content of the conductive layer, specifically 1% by weight to 20% by weight, more specifically 1% 10% by weight.
It is possible to sufficiently form the cured structure within the above range and to prevent the hardness of the cured product from becoming too high to prevent deterioration of the interfacial peeling force and adhesion and to prevent the stability and reliability of the residual curing agent from being deteriorated .
Insulating particle
The insulating particles may be inorganic particles, organic particles, or mixed organic / inorganic particles, and may be included in the insulating layer and the conductive layer. The insulating particles can impart cognition to the anisotropic conductive film and prevent shorting between the conductive particles.
Non-limiting examples of the inorganic particles, silica (silica, SiO 2), Al 2 O 3, TiO 2, ZnO, MgO, ZrO 2, PbO, Bi 2 O 3, MoO 3, V 2 O 5, Nb 2 O 5 , Ta 2 O 5 , WO 3, and In 2 O 3. Examples of the organic particles include, but are not limited to, acrylic beads and the like. Or may be coated organic / inorganic hybrid particles.
The insulating particles may be inorganic particles, and may specifically be silica. The silica may be a silica produced by a vapor phase method such as a silica or flame oxidation method by a liquid phase method such as a sol-gel method or a precipitation method. Non-powder silica in which silica gel is pulverized may be used, or fumed silica ) Or fused silica may be used, and the shape thereof may be spherical, crushed, edgeless, or the like, but is not limited thereto. Fused silica is a synthetic silica glass that is produced by thermal decomposition of natural silica glass and a gas raw material such as silicon tetrachloride or silane in an oxygen flame or an oxygen plasma produced by melting natural quartz or silica into an arc (flame) discharge or an oxyhydrogen flame, Or the like.
If the size of the insulating particles is larger than the size of the conductive particles (average particle diameter), there may be a problem in conduction. Therefore, those having a smaller size than the conductive particles can be used.
The insulating particles may be contained in an amount of 1 wt% to 50 wt%, specifically 5 wt% to 50 wt%, and more specifically 5 wt% to 40 wt%, based on the total weight of the solid content of the insulating layer. , For example, from 10% by weight to 40% by weight, and from 20% by weight to 35% by weight.
In addition, the content of the insulating particles contained in the conductive layer may be 20 wt% or more, specifically 25 wt% to 85 wt%, more specifically 25 wt% To 80% by weight, for example, from 25% by weight to 75% by weight and from 25% by weight to 65% by weight.
In addition, the content of the total insulating particles included in the anisotropic conductive film may be 20 wt% or more based on the total weight of the anisotropic conductive film.
Specifically, the content of the total insulating particles included in the anisotropic conductive film may be 20 wt% to 60 wt%, and more specifically, 21 wt% to 60 wt% based on the total weight of the anisotropic conductive film. For example from 22% to 50% by weight.
The content of the insulating particles included in the conductive layer may be equal to or greater than the content of the insulating particles included in the insulating layer based on the total weight of the anisotropic conductive film.
In the present specification, when the total amount of the insulating particles is expressed by the total weight of the anisotropic conductive film, the thickness of the conductive layer and the insulating layer with respect to the total thickness of the anisotropic conductive film having a multilayer structure (for example, , And calculate the percentage of the total insulating particle content as shown in Equation (1).
[Formula 1]
(% By weight) of the total insulating particles in the anisotropic conductive film = [Ac x (Tc / (Tc + Ti))] + [Ai x (Ti / (Tc +
Ai is the content (% by weight) of the insulating particles in the insulating layer, Tc is the thickness of the conductive layer (占 퐉), Ti is the thickness of the insulating layer ( Respectively.
In the present specification, when the content of the insulating particles contained in each layer is expressed by the total weight of the anisotropic conductive film solids, the percentage of the total insulating particle content is calculated in consideration of the thickness of each layer.
The method of calculating the total insulating particle content is equally applicable to the contents of other compositions relative to the total weight of the anisotropic conductive film solids, even if not specifically mentioned below.
By controlling the melt viscosity of each layer through the content of the insulating particles in the above range, the density ratio according to one example of the present invention can be shown. By controlling the fluidity of each layer, it is possible to prevent the outflow of the conductive particles to the space portion However, it is possible to prevent a short circuit between the electrodes.
By containing silica having the above-mentioned content and average particle size in each layer, the flowability in which the composition of each layer can be sufficiently filled between the electrodes can be ensured and the insulation reliability of the particles can be improved due to the insulating property of the particles.
The conductive layer included in the anisotropic conductive film according to an exemplary embodiment of the present invention may include conductive particles.
Conductive particle
The conductive particles may be contained in the conductive layer for conductivity between the terminals, and the conductive particles used in one example of the present invention are not particularly limited, and conductive particles conventionally used in the art can be used.
Non-limiting examples of the conductive particles include metal particles including Au, Ag, Ni, Cu, solder, and the like; carbon; Particles comprising a resin including polyethylene, polypropylene, polyester, polystyrene, polyvinyl alcohol or the like and particles of the modified resin coated with a metal such as Au, Ag, Ni or the like; Insulating particles coated with insulating particles, and the like. These may be used alone or in combination of two or more.
The average particle size of the conductive particles may vary depending on the pitch of the applied circuit. Specifically, the conductive particles may be used in a range of 1 탆 to 10 탆 according to the application.
The conductive particles may be contained in the conductive layer in an amount of 1 wt% to 40 wt% relative to the total weight of the conductive layer solid content, specifically 5 wt% to 40 wt%, for example, 10 wt% 30% by weight.
In addition, the total conductive particles in the anisotropic conductive film may be contained in an amount of 5 to 20% by weight, specifically 5 to 15% by weight, based on the total weight of the anisotropic conductive film.
In the present specification, when the content of the conductive particles contained in the conductive layer is expressed by the total weight of the anisotropic conductive film solids, the conductive layer and the insulating layer with respect to the total thickness (e.g., the sum of the conductive layer and the insulating layer thickness) , The percentage of the total conductive particle content is calculated as shown in the following equation (2).
[Formula 2]
(% By weight) of the total conductive particles in the anisotropic conductive film = [Cc x (Tc / (Tc + Ti))] + [
Tc is the thickness (占 퐉) of the conductive layer, Ti is the thickness (占 퐉) of the insulating layer (占 퐉), Cc is the content Respectively.
The conductive particles can be easily pressed between the terminals within the above-mentioned range to ensure stable connection reliability, and the connection resistance can be reduced by improving the electrical conductivity.
The content (% by weight) of the conductive particles and the insulating particles included in the conductive layer of one example of the present invention may be larger than the content (% by weight) of the insulating particles contained in the insulating layer. The content of the conductive particles and the insulating particles included in the conductive layer may be 40 wt% to 90 wt% based on the total solid weight of the conductive layer, and may be 40 wt% to 80 wt%, more specifically, 45 By weight to 75% by weight.
The content of the insulating particles contained in the insulating layer is substantially the same as that described in the above-mentioned insulating particle item, and hence the description thereof will be omitted.
When the anisotropic conductive film is heat-pressed, the density (X) of the conductive particles in the electrode portion and the density (Y) of the conductive particles in the space portion can be reduced by reducing the flow of the composition in the above- (X: Y) can be adjusted from 1: 1 to 1:10.
The conductive layer and the insulating layer of one example of the present invention may add other additives in addition to the above-mentioned components in order to further impart additional physical properties to the film without impairing the basic physical properties of the anisotropic conductive film.
Other additives
The anisotropic conductive film of the present invention may further include other additives such as a polymerization inhibitor, an antioxidant, a heat stabilizer, and a curling agent to add additional physical properties without impairing the basic physical properties. The amount of the other additives to be added may vary depending on the use of the film and the desired effect, and the preferable content thereof is not particularly limited and is well known to those skilled in the art.
The method for forming the anisotropic conductive film of the present invention using the anisotropic conductive film composition is not particularly limited and a method commonly used in the art can be used. Non-limiting examples of forming the anisotropic conductive film are as follows: the binder resin is dissolved in an organic solvent and liquefied, the remaining components are added, and the mixture is stirred for a certain period of time and applied on the release film to a thickness of 10 to 50 탆 And then dried for a predetermined period of time to volatilize the organic solvent, whereby an anisotropic conductive film having a single-layer structure can be obtained. In this case, the organic solvent may be an ordinary organic solvent without limitation. In the present invention, the anisotropic conductive film having a multilayer structure of two or more layers can be obtained by repeating the above-described process two or more times.
According to another embodiment of the present invention, there is provided a connection connected with any one of the above-mentioned anisotropic conductive films of the present invention.
Specifically, a connection according to an example of the present invention includes a first connected member containing a first electrode, a second connected member containing a second electrode, and an anisotropic conductive film according to an example of the present invention , The anisotropic conductive film may be a connection positioned between the first connected member and the second connected member to connect the first electrode and the second electrode.
The anisotropic conductive film contains conductive particles and is interposed between the first circuit member and the second circuit member so that the first electrode and the second electrode can be electrically connected by the conductive particles contained in the anisotropic conductive film.
The first connected member may be a glass substrate, and the second connected member may be any one of a COF, an IC driver chip, and an IC chip.
The anisotropic conductive film is placed between the glass substrate and the COF, the IC driver chip, or the IC chip. The anisotropic conductive film is pressurized at a temperature of 50 to 90 DEG C for 1 to 5 seconds and at a pressure of 1.0 MPa to 5.0 MPa. And then subjected to compression bonding under the conditions of 170 to 190 DEG C for 5 to 7 seconds and 60 to 80 MPa and then left for 250 hours at a temperature of 85 DEG C and a relative humidity of 85% The resistance can be less than 7 Ω.
After the main compression, the connection resistance can be 15 Ω or less after the reliability evaluation, which is performed by allowing the device to stand for 500 hours at a temperature of 85 ° C. and a relative humidity of 85%.
Within this range, the connector can advantageously be used for a long period under high temperature and / or high humidity conditions.
The specific conditions of the pressurization and final compression are substantially the same as those mentioned in the density ratio (X: Y) measurement method of the above-mentioned conductive particles, and the description thereof will be omitted.
Since the first electrode and the second electrode are substantially the same as those described above, the related description will be omitted.
Hereinafter, the present invention will be described in more detail by describing Examples, Comparative Examples and Experimental Examples. However, the following examples, comparative examples and experimental examples are merely examples of the present invention, and the present invention should not be construed as being limited thereto.
Example 1
Preparation of conductive layer composition
20 parts by weight of a phenoxy resin (PKHH, Inchemrez, USA) dissolved in a xylene / ethyl acetate azeotropic mixed solvent at 40% by volume as a binder resin serving as a matrix for forming a film, and 20 parts by weight of a propylene oxide- 15 parts by weight of an epoxy resin (EP-4000S, Adeka, Japan), 10 parts by weight of propylene oxide-based epoxy resin (EP-4010S, Adeka, Japan), 10 parts by weight of a thermosetting cationic curing agent (Si- , 30 parts by weight of insulating particles (SFP-20M, DENKA, Japan) for imparting weight, flowability and insulation, and 20 parts by weight of conductive particles (AUL-704, average particle diameter 4 μm, SEKISUI Co., Japan) Followed by mixing to prepare a conductive layer composition
Preparation of insulation layer composition
In the production of the conductive layer composition, an insulating layer composition was prepared in the composition and contents shown in Table 1 below using the same method
Production of anisotropic conductive film
Each of the insulating layer compositions was coated on a white release film, and the solvent was evaporated for 5 minutes in a drier at 70 캜 for 6 minutes to obtain conductive and insulating layer films each having a conductive layer of 6 탆 and an insulating layer of 12 탆 thick.
The prepared conductive layer and insulating layer film were laminated at 40 DEG C using a laminator to obtain an anisotropic conductive film.
The total insulated particle content was calculated on the basis of the total weight of the anisotropic conductive film solids, and the percentage of the total insulated particles was calculated in consideration of the thickness of each layer.
Example 2
The anisotropic conductive film of Example 2 was produced in the same manner as in Example 1 except that the content of each composition was adjusted to the above-mentioned Table 1.
Example 3
An anisotropic conductive film of Example 3 was produced in the same manner as in Example 1, except that the content of each composition was adjusted to that in Table 1.
Comparative Example 1
Anisotropic conductive films of Comparative Example 1 were produced in the same manner and under the same conditions as in Example 1, except that the content of each composition in Example 1 was adjusted to the above Table 1.
Comparative Example 2
Anisotropic conductive films of Comparative Example 2 were produced in the same manner and under the same conditions as in Example 1, except that the content of each composition in Example 1 was adjusted to the above Table 1.
Comparative Example 3
An anisotropic conductive film of Comparative Example 3 was produced in the same manner as in Example 1 except that the content of each composition in Example 1 was adjusted to the above Table 1.
Experimental Example 1
(X: Y) ratio between the conductive particle density X existing between the first electrode and the second electrode and the conductive particle density Y existing in the space without being compressed
The following methods were performed to measure X: Y using the anisotropic conductive films prepared in the above Examples and Comparative Examples.
Examples and Comparative then allowed to stand for one hour for each of the films prepared from the example at room temperature, the bump area 2000㎛ 2, a glass substrate with indium tin oxide (ITO) circuit having a thickness of 5000Å with a bump area 2000㎛ 2, thickness And a 1.7 mm Driver-IC chip was connected under pressure under the following conditions.
1) Pressurization condition at 60 DEG C for 1 second and 1.0 MPa
2) Under the conditions of 180 ° C, 6 seconds, and 70 MPa
Each density was observed by measuring the number of particles present on the bumps above the number and the inter-electrode space portion particles as to the sample connection is completed, under the microscope X, Y (per unit area (㎛ 2) the number of the bumps above the particle and the inter-electrode (Ea / mu m < 2 >) in the space portion) and X: Y were measured, and the results are shown in Table 2 below.
Experimental Example 2
Connection resistance measurement
The following methods were performed to measure the connection resistance of the anisotropic conductive films produced in the Examples and Comparative Examples.
Each of the anisotropic conductive films was allowed to stand at room temperature (25 DEG C) for 1 hour, and thereafter a driver IC chip having a pattern of 4 terminals was formed on a patternless glass in which an ITO layer of 1000 ANGSTROM was coated on a 0.5 t glass, The upper and lower interfaces of the conductive film were pressed under the conditions of pressurization of 1 MPa and 1 MPa at a measurement temperature of 60 DEG C and final compression at 180 DEG C for 6 seconds and 70 MPa to prepare 7 pieces of each of the above specimens, The average value was calculated by measuring the connection resistance 5 times using the 4 point probe method (ASTM F43-64T).
Experimental Example 3
Connection resistance measurement after reliability evaluation
After the reliability evaluation of the anisotropic conductive films produced in the above Examples and Comparative Examples, the following methods were performed to measure the connection resistance.
After performing pressurization and final compression under the conditions of Experimental Example 2, each of the seven specimens was allowed to stand for 250 hours and 500 hours under the conditions of a temperature of 85 캜 and a relative humidity of 85%, and a high temperature and high humidity reliability evaluation was performed After each of these reliability evaluations, the connection resistance was measured five times and an average value was calculated.
The results of Experimental Examples 1 to 3 are shown in Table 2 below .
Referring to Table 2, in the case of Examples 1 to 3, the density ratio is in the range of 1: 1 to 1:10, the connection resistance is 0.5 Ω or less, the connection resistance after the reliability evaluation after 250 hours is 7 Ω or less , And 500 hours after the reliability evaluation, the connection resistance was 15 Ω or less. As a result, it was confirmed that the outflow of the conductive particles was small in the above density range and the connection resistance and connection reliability were excellent.
On the other hand, in Comparative Examples 1 to 3, when the density ratio exceeds 1:10, the connection resistance exceeds 0.5 OMEGA, the connection resistance after the 250-hour reliability evaluation exceeds 7 OMEGA, and the connection resistance after the 500 hour reliability evaluation exceeds 15 OMEGA It can be confirmed that not only the connection resistance but also the connection resistance after the reliability evaluation can not be improved when the density ratio is not satisfied.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that such detail is solved by the person skilled in the art without departing from the scope of the invention. will be. Accordingly, the actual scope of the present invention will be defined by the appended claims and their equivalents.
A The conductive particles (electrodes) pressed between the first electrode and the second electrode
B is not pressed and the conductive particles
10 Anisotropic conductive film
40 conductive particles
50 first connected member
60 second connected member
70 first electrode
80 second electrode
Claims (19)
X is an anisotropic conductive film which is placed between any one of a COF, an IC driver chip or an IC chip including a glass substrate including a first electrode and a second electrode, and is heated at a temperature of 50 DEG C to 90 DEG C for 1 second to 5 seconds, Pressure bonding at a pressure of 1.0 MPa to 5.0 MPa and then compression bonding at 170 to 190 DEG C for 5 seconds to 7 seconds under a condition of 60 MPa to 80 MPa, The density of the pressed conductive particles,
Y is the density of the conductive particles present in the space portion measured after the pressing and pressing,
The anisotropic conductive film may have a thickness
5% to 20% by weight of the total conductive particles and 21% to 60% by weight of the total insulating particles,
Wherein the anisotropic conductive film comprises a conductive layer and an insulating layer formed on one or both surfaces of the conductive layer,
(% By weight) of the conductive particles and the insulating particles contained in the conductive layer is larger than the content (% by weight) of the insulating particles contained in the insulating layer.
5% to 20% by weight of the total conductive particles and 21% to 60% by weight of the total insulating particles,
A conductive layer and an insulating layer formed on one or both surfaces of the conductive layer,
(% By weight) of the conductive particles and the insulating particles contained in the conductive layer is larger than the content (% by weight) of the insulating particles contained in the insulating layer.
Pressed under conditions of 50 to 90 ° C for 1 second to 5 seconds and 1.0 MPa to 5.0 MPa and then compression bonded at 170 to 190 ° C for 5 seconds to 7 seconds under 60 MPa to 80 MPa Wherein the one connection resistance is 0.5 Ω or less.
A second connected member containing a second electrode, and
And an anisotropic conductive film according to any one of claims 6, 8 and 16,
And the anisotropic conductive film is positioned between the first connected member and the second connected member to connect the first electrode and the second electrode.
Wherein the second connected member is any one of a COF, an IC driver chip, and an IC chip,
Placing the anisotropic conductive film between the glass substrate and the COF, the IC driver chip, or the IC chip,
Pressed under the conditions of 50 to 90 ° C for 1 second to 5 seconds and 1.0 MPa to 5.0 MPa and compression bonded at 170 to 190 ° C for 5 seconds to 7 seconds and 60 MPa to 80 MPa, Wherein the connection resistance is 7 Ω or less after the reliability evaluation as measured by allowing to stand for 250 hours at a temperature of 85 ° C. and a relative humidity of 85%.
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