JPS6045030A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6045030A
JPS6045030A JP58153800A JP15380083A JPS6045030A JP S6045030 A JPS6045030 A JP S6045030A JP 58153800 A JP58153800 A JP 58153800A JP 15380083 A JP15380083 A JP 15380083A JP S6045030 A JPS6045030 A JP S6045030A
Authority
JP
Japan
Prior art keywords
pellet
resin material
resin
semiconductor
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58153800A
Other languages
Japanese (ja)
Inventor
Toshiaki Fukushima
利明 福島
Hiroshi Minamizawa
南沢　寛
Hisashi Takagame
高亀　寿
Toyoichi Ueda
豊一 植田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP58153800A priority Critical patent/JPS6045030A/en
Publication of JPS6045030A publication Critical patent/JPS6045030A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To enhance reliability about pellet fitting strength at manufacture of a semiconductor device by a method wherein a resin material piece formed with a projecting shape at the central part of one side is put on a pellet fitting surface, and a semiconductor pellet is put on the cut piece of the resin material thereof to be adhered. CONSTITUTION:The ribbon 1 of a resin material is cut in the fixed length and shape as a projecting type cut piece 2 of prescribed length by a proper cutter. The respective cut pieces 2 are put on pellet fitting surfaces, the tabs 4 of lead frames 3 for example. Then, a semiconductor pellet 5 is put on the cut piece 2, and the semiconductor pellet 5 is welded to the cut piece 2 according to heating. After then, the resin material of the cut piece 2 is hardened. At this time, when thermoplastic resin is used, pellet fitting can be attained in an instant by heating at the temperature of the softening point or more of resin, and after then, the resin material is hardened by returning to the normal temperature. After pellet fitting is completed, the electrode parts of the semiconductor pellet 5 and the inner lead parts of the lead frame 3 are connected electrically by bonding of wires 6. After then, the device is molded by resin 7 to be sealed.

Description

【発明の詳細な説明】 本発明は半導体装置の製造法に関する。ＩＣ。[Detailed description of the invention] The present invention relates to a method for manufacturing a semiconductor device. I.C.

ＬＳＩ等の半導体装置の製造において、基板にベレット
と呼ぶ半導体小片からなる電気回路素子を固定する工程
がある。従来、この工程において半導体ベレットをベレ
ツト付は面、たとえばリードフレームのタブ上にボンデ
ィングする場合、銀（Ａｇ）ペースト等を用いている。2. Description of the Related Art In manufacturing semiconductor devices such as LSIs, there is a step of fixing electric circuit elements made of small semiconductor pieces called pellets to a substrate. Conventionally, silver (Ag) paste or the like is used in this process when bonding a semiconductor pellet to a surface with a pellet, such as a tab of a lead frame.

この場合、まずタブ上に銀ペースト層をティスベンス法
またはスクリーン印刷法で形成する。次に、ｆｓペース
ト層上に半導体ベレットを搭載し。In this case, first, a silver paste layer is formed on the tab by the Tisbens method or screen printing method. Next, a semiconductor pellet is mounted on the fs paste layer.

銀ペースト層を硬化壊せている。このようにしてベレッ
ト付けを終えた後ワイヤボンチイングラ行って、レジン
モールド法等で封止する。The silver paste layer is hardened and broken. After completing the bullet attachment in this manner, wire bonding is performed and sealing is performed using a resin molding method or the like.

しかし、前記従来法の場合、銀ペーストの粘度のばらつ
きや劣化等に起因して、ティスベンスまたはスクリーン
印刷により形成さｉするペーストの量や形状等にほらつ
きが生じてしまう。その結果。However, in the case of the conventional method, due to variations in viscosity and deterioration of the silver paste, variations occur in the amount and shape of the paste formed by Tisbens or screen printing. the result.

ペースト厚にばらつきが発生し、−・レット付は強度の
信頼性が低下する。したかつで、最悪の場合には、ペー
スト量の不足に起因するベレット付は強度の不足により
、ワイヤホンティ７グ時にベレットの剥離を生じたり、
めをいけペーストの鍬が多すさる場合には、ペーストか
ベレント上に４で回り込んで特性不良を生じ９歩悄り一
＼’　１．−ｆ軸性を低下させてしまう。Dispersion occurs in the paste thickness, and the reliability of the strength decreases with -.letting. In the worst case, the bullet attachment due to insufficient paste amount may cause the bullet to peel off during wire boning due to lack of strength.
If there is too much hoeing of the paste, it may wrap around the paste or berent, causing poor characteristics and resulting in 9 steps of agony.1. -The f-axis properties are reduced.

そのため、ベレット付けの自！！＋！＋　１にが困う准
となり。Therefore, I am wearing a beret! ! +! + 1 becomes a troublesome associate.

ペースト量の制御を相当の類１現で行わなけれはならな
いだめに作業性も低下しでしまう。The amount of paste must be controlled to a considerable extent, and work efficiency is also reduced.

本発明け、このような問題点をｌ’＋７決するものであ
る。The present invention solves these problems by l'+7.

すなわち１本発明は１片面中心部が凸状になっている樹
脂材料片をベレット付面上に載せ、その切断片上に半導
体ペレットを載せて被着することによりベレット（；ｊ
けすることを特徴とする半導体装置のｌ！！造法に関す
る。That is, in the present invention, a resin material piece having a convex central portion on one side is placed on a pellet attachment surface, and a semiconductor pellet is placed and adhered on the cut piece to form a pellet (;j
l! of a semiconductor device characterized by ! Regarding the manufacturing method.

本発明の樹脂劇料は、熱可塑性樹脂または熱硬化性樹脂
からなる。The resin material of the present invention is made of a thermoplastic resin or a thermosetting resin.

熱可塑性樹脂としては、特に、ガラス転移点が１６０℃
以上で熱分解開始温度が３５０℃以上のものが好ましい
。In particular, thermoplastic resins have a glass transition point of 160°C.
Those having a thermal decomposition initiation temperature of 350° C. or higher are preferred.

該熱可塑性樹脂の例としては９次の一般式＋１１または
ｆＩ［ｌで表わされる繰り返し単位を有する熱可塑性樹
脂がある。An example of the thermoplastic resin is a thermoplastic resin having a repeating unit represented by the 9th order general formula +11 or fI[l.

ここに、上記一般式（１１中、Ｘけ結合、　−〇　−。Here, the above general formula (in 11, X bond, -〇　-.

ｅ ＣｓＨｓ　、　Ｃ５Ｈｔ　＊　ＣＦｓまたはＣＣ１！３
であり、　Ｉｔ、ｓおよび几６は同一でも相異っていて
もよい。また、Ｒ重。e CsHs, C5Ht * CFs or CC1!3
It, s and 几6 may be the same or different. Also, R weight.

几２．Ｒ３および几４は、　Ｈ、Ｃ１１３、Ｃ２Ｈ６。几2. R3 and 几4 are H, C113, C2H6.

−ＣｓＨｙ、ＯＣＨ３，ＯＣ２Ｈ５，０Ｃ３Ｈｒ、Ｂｒ
またはＣ１であり、　＆　ｔ　Ｒ２＋Ｒ３および几４け
同一でも相異ってもよい。更に上記繰り返し単位は適宜
の組み合わせで結合してもよい。-CsHy, OCH3, OC2H5, 0C3Hr, Br
or C1, &t R2+R3 and 4 digits may be the same or different. Furthermore, the above repeating units may be combined in any appropriate combination.

上記樹脂の具体例としては次の如きものが挙けられる。Specific examples of the above resin include the following.

太１−１余白 −−淵 ３６０（カーボランダム社製、ポリアリーレンスルホン
）、エコノール（カーボランダム社製、ポリアリーレン
エステル）も包含される。Thick 1-1 margin -- Fuchi 360 (manufactured by Carborundum, polyarylene sulfone) and Econol (manufactured by Carborundum, polyarylene ester) are also included.

これらの中で芳香族ポリエーテルアミドを用いることが
好ましい。又当該芳香族ポリエーテルアミドとしては９
例えは次の一般式（ｌｕｌｌで示ａｔｌる芳香族ジアミ
ン ・・・・・・・・・・・・・・・（川）（式中、几１〜
几４および几５〜Ｒ６け上記に同じである。） と次の一般式（ＩＶＩで示塾れる芳香族ジカルボン酸シ
バライド ＸＣＵ　Ａｒ　−ＣＯＸ　（ＩＶ） （式中、Ａｒけ上記に同じであり、又Ｘけ塩素又は臭素
を示す） とを公知の方法９例えば溶液爪合法や特開昭５２−２３
１９８号公報に示される方法によって反応させて得られ
るものが好−ましい。Among these, it is preferable to use aromatic polyetheramide. Also, as the aromatic polyether amide, 9
An example is the following general formula (aromatic diamine indicated by lull) (in the formula,
Box 4 and Box 5 to R6 are the same as above. ) and the following general formula (aromatic dicarboxylic acid cybalide XCU Ar -COX (IV) represented by IVI (wherein, Ar is the same as above, and X represents chlorine or bromine) by a known method. 9 For example, the solution nail method and JP-A-52-23
Preferably, those obtained by reaction according to the method shown in Japanese Patent No. 198 are preferred.

ここに上記一般式（１旧で示される芳香族ジアミンとし
ては１例えば２．２−ビス（４−（４−アミノフェノキ
／）フェニルプロパン、ビス［４−（４−アミノフェノ
キシ）フェニル〕メクン、２゜２−ビス〔３，５−ジメ
チル−４−（４−アミンフェノキ／）フェニルプロパン
、２＋２−ビス〔３−メチル−４−（４−アミノフェノ
キ７）フェニルプロパン、２．２−ビス〔３，５−ジプ
ロ七−４−（４−アミノフェノキシ）フェニルプロパン
などがあり、これらの１種以上が用いられる。Examples of aromatic diamines represented by the above general formula (1) include 2,2-bis(4-(4-aminophenoxy/)phenylpropane, bis[4-(4-aminophenoxy)phenyl]mecne, 2゜2-bis[3,5-dimethyl-4-(4-aminophenoxy/)phenylpropane, 2+2-bis[3-methyl-4-(4-aminophenoxy7)phenylpropane, 2,2-bis[ Examples include 3,5-dipro7-4-(4-aminophenoxy)phenylpropane, and one or more of these may be used.

又一般式ｆｌＶｌで示嘔れる芳香族ジカルボン酸シバラ
イドとしては１例えばテレフタル酸ジクロライド、イソ
フタル酸ジクロライド、ジフェニルエーテルジカルホ７
′酸ジクロライド、ジフェニルジヵノＬボン酸ジクロラ
イド、ナフタレンジカルボン酸ジクロライドなどがあげ
られ、＋Ｃれらの１種以上が用いられ、特にテレフタル
酸ジクロライド、イソフタル酸ジクロライドの混合物が
好ましく用いられる。Examples of the aromatic dicarboxylic acid civalide represented by the general formula flVl include 1, for example, terephthalic acid dichloride, isophthalic acid dichloride, diphenyl ether dicarpho 7
' acid dichloride, diphenyldicano-L-boxylic acid dichloride, naphthalene dicarboxylic acid dichloride, etc. +C One or more of these are used, and a mixture of terephthalic acid dichloride and isophthalic acid dichloride is particularly preferably used.

更に芳香族ジカルボン酸ジノ・ライド以外のアミド形成
往訪導体と一般式ｆｌｌｌｌで示いれる芳香族ジ゛アミ
ンとの公知のポリアミド生成反応９例えはリン系触媒に
よる高温重縮合あるいけエステル交換法などによつ′て
も芳香族ポリエーテルアミドを得ることができる。かか
る芳香族ポリエーテルアミドの還元粘度（η　、０．２
９／ｄＪ　ジメチルポルム８ｐ／。Furthermore, nine known polyamide-forming reactions between amide-forming visiting conductors other than aromatic dicarboxylic acid dino-rides and aromatic diamines represented by the general formula flllll, such as high-temperature polycondensation using phosphorus catalysts and transesterification methods, etc. However, aromatic polyetheramide can be obtained. The reduced viscosity (η, 0.2
9/dJ dimethylporum 8p/.

アミド溶液、３０℃）は０．５〜４．０好ましくは１．
５〜２．０である。０．５未満では熱安定性が低ｌ・し
、４．０を越えると加工性が劣る。amide solution, 30°C) is 0.5 to 4.0, preferably 1.
5 to 2.0. If it is less than 0.5, the thermal stability will be low, and if it exceeds 4.0, the workability will be poor.

本発明に於いては、上記で例示した熱可塑性樹脂の２種
類以上をブレンドして用いでもよく、又後述する如き、
半導体素子を支持部月に接合させる際の各種の態様に応
じてその神類を適宜選択すればよい。In the present invention, two or more types of thermoplastic resins exemplified above may be blended and used, and as described below,
The type may be selected as appropriate depending on various aspects of bonding the semiconductor element to the support portion.

上記樹脂材料としては、熱硬化性樹脂を用いることもで
き、この例としてはポリアミドイミド樹脂等がある。As the resin material, a thermosetting resin can also be used, such as polyamide-imide resin.

上記樹脂材料としては、工程の簡略化から熱町塑性樹脂
が好ましい。As the resin material, Natsumachi plastic resin is preferable from the viewpoint of simplifying the process.

１図は本発明に用いる樹脂劇料片の一例を示す正面図で
あり、第２図は同様の他の例を示す。FIG. 1 is a front view showing an example of a resin material piece used in the present invention, and FIG. 2 shows another similar example.

上記樹脂材料片は片面中心部が凸状になっているため、
半導体ベレットを載置したときに、半導体ペレットの上
面に樹脂材料が流れ込むことがない。The above resin material piece has a convex center on one side, so
When the semiconductor pellet is placed, the resin material does not flow onto the upper surface of the semiconductor pellet.

上記樹脂利料片の大きさけ、半導体べ【／ットおよび基
板等の大きさを考慮し、所定の大きさＫされる。The predetermined size K is determined by taking into consideration the size of the resin interest piece, the size of the semiconductor bed, the substrate, etc.

まだ１本発明の樹脂拐料は、リボン状のものを適宜所定
の長石に切断してペレット付に供するのが好ましい。こ
のとき、切断片の片面中心部が凸状になるように、リボ
ンに適宜凸部が形成ネれている。It is preferable that the resin pellets of the present invention be prepared in the form of ribbons, which are appropriately cut into predetermined feldspars, and then made into pellets. At this time, a convex portion is formed on the ribbon as appropriate so that the center of one side of the cut piece is convex.

以丁１本発明を図面に示す実施例に従って、詳細に説明
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail according to embodiments shown in the drawings.

第３図ないし第８図は１本発明の半導体装置の製造法の
一実施例を示す概略説明図である。FIGS. 3 to 8 are schematic explanatory diagrams showing an embodiment of the method for manufacturing a semiconductor device according to the present invention.

樹脂材料が第３図に示すようにリールＲ上に巻かれたリ
ボン１として順次供給される。A resin material is sequentially supplied as a ribbon 1 wound on a reel R as shown in FIG.

前記樹脂利料のリボン１け次いで適宜のカッター（図示
せず）により第４図の如く所定の長芒のデスク状の切断
片２として一定の長？）および形状に切断され、各切断
片２の樹脂量は一定である。One ribbon of the resin material is then cut into a predetermined disk-shaped cut piece 2 of a certain length using an appropriate cutter (not shown) as shown in FIG. ) and shape, and the amount of resin in each cut piece 2 is constant.

前記切断片２の各々はペレット付は面たとえばリードフ
レーム３のタフ゛４」二に４戊せられる（第５図）。こ
の場合、切断片２はタブ４上に位置決め芒れるだけでも
よく、あるいは加熱によりタブ４上に溶層しだ状態にし
てもよい。Each of the cut pieces 2 is provided with a pellet on the surface, for example, on the tuff 4 of the lead frame 3 (FIG. 5). In this case, the cut piece 2 may be simply positioned on the tab 4, or it may be heated to cause it to ooze out onto the tab 4.

次に、前記切断片２の上に半導体ペレット５が載せられ
、加熱により該半導体ペレット５は切断片２と溶着され
る（第６図）。上記加熱は、ヒーターによる加熱、超音
波による加熱、赤外純照射にＬる加熱等を用いることが
できる。その後、切断片２の樹脂材料は硬化させられる
。この時、熱可塑性の樹脂を用いた場合は、樹脂の軟ｆ
ヒ点以」二の温度で加熱することでベレットｆ・ｊけを
瞬間的に行うことができ、その後樹脂材料は常温にもど
すことで硬化させることができる。これによりベレット
付けは完了する。Next, a semiconductor pellet 5 is placed on the cut piece 2, and the semiconductor pellet 5 is welded to the cut piece 2 by heating (FIG. 6). For the above-mentioned heating, heating by a heater, heating by ultrasonic waves, heating by pure infrared irradiation, etc. can be used. Thereafter, the resin material of the cut piece 2 is cured. At this time, if thermoplastic resin is used, the soft f of the resin
By heating at a temperature above the point, the pellet f/j can be instantaneously cut, and then the resin material can be cured by returning it to room temperature. This completes the beret attachment.

ベレット付は終了後、半導体ペレット５の電極部とリー
ドフレーム３のインナーリード部との間をワイヤ６のボ
ンティングによシミ気的に接続する（第７図）。After the pellet attachment is completed, the electrode portion of the semiconductor pellet 5 and the inner lead portion of the lead frame 3 are electrically connected by bonding with the wire 6 (FIG. 7).

その後、第８図に示すように、レジ７７でモールドする
ことにより封止すると、半導体装置の組立てが完了する
。Thereafter, as shown in FIG. 8, the semiconductor device is sealed by molding with a resist 77, and the assembly of the semiconductor device is completed.

本実施例では、樹脂材料けりボン１として供給した後に
所定長芒の切断片２に切断されるので。In this embodiment, after the resin material is supplied as a kibbon 1, it is cut into cut pieces 2 of a predetermined length.

ベレット旬けのだめの樹脂材料が常に一定の量および形
状で供給孕れる。その結果、樹脂材料の量や形状のｒよ
らつきに起因するベレット付は強度の不足や特性不良を
排除でき、ペレット付けの信頼性が茜くなり１歩留りを
向上させることができる。The resin material of the beret shell is always supplied in a constant amount and shape. As a result, it is possible to eliminate the lack of strength and poor properties of pelletizing due to fluctuations in the amount and shape of the resin material, and the reliability of pelletizing can be improved and the yield can be improved.

しかも１作業能率が良くなり、自動化も容易となる。Moreover, work efficiency is improved and automation becomes easier.

なお、前記実施例では、樹脂材料をまず最初にリボン状
で供給したものを所定長さに切断したが。In the above embodiment, the resin material was first supplied in the form of a ribbon, which was then cut into a predetermined length.

予め所定長芒の切断片に切断しておいだものを直接最初
から供給するようにしてもよい。It is also possible to cut the pieces into awns of a predetermined length in advance and supply them directly from the beginning.

樹脂材料としては、熱可塑性の樹脂が好ましく用いられ
る。As the resin material, thermoplastic resin is preferably used.

また、樹脂材料は単独で用い−Ｃもよいが、銀等の無機
材料を含有していでもよく、さしにガラス布に樹脂を含
浸したものを用いるとベレソ）（りけ強度を高めるため
に有効でりる。さらに、上記樹脂制料は、粉末を加圧成
形したもの、又は液状レジンケギャステイング等により
所定の形状に成形したものを用いても良い。In addition, the resin material may be used alone -C, but it may also contain an inorganic material such as silver. It is effective.Furthermore, the above-mentioned resin material may be one obtained by pressure molding a powder, or one formed into a predetermined shape by liquid resin keguaging or the like.

なお９本発明はレジンモールド型以外の半導体装置の組
立てにも適用できる。Note that the present invention can also be applied to the assembly of semiconductor devices other than those of resin mold type.

以上説明したように９本発明によｔ目、Ｌ、べ１ノツト
付は用の樹脂材料を常に一定の量や形状等て供給できる
ので、樹脂量の過少によるベレノｌ−（＝Ｊけ強度の不
足や、樹脂量の過多による特性不良等を起こすことがな
く、ベレット（＝Ｊけの歩留りおよび信頼性を向上させ
ることができる。まプＣ，ペレノト付けの自動化１作業
能率の向上が容易に可能となる。As explained above, according to the present invention, the resin material for the T-th, L, and Bevel 1-knotted parts can always be supplied in a constant amount and shape. It is possible to improve the yield and reliability of pellets (=J) without causing property defects due to lack of resin or excessive amount of resin. Automation of map C and pellet attachment 1. Easy to improve work efficiency. becomes possible.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明に使用される樹脂材料片の一例を示す正
面図、第２図は同様の他の例を示す正面図および第３図
ないし第８図は本発明によるベレット付は方法の一実施
例を用いた半導体装置の組立工程を順次示す概略的説明
図である。 符号の説明 １・・・樹脂月料のリボン　２・・・切断片３・・・リ
ードフレーム　４・・・タブ５°・・半導体ペレット　
６・・・ワイヤ７・争−レンン 代理人　弁理士　苔　林　邦　彦 第　１　図 にて）コ ′ｆ−１２図 Ｃ二二） 第　６　図 第４図 第Ｓ図 第　６（２１１ 第　７　図 第　８　図FIG. 1 is a front view showing an example of a piece of resin material used in the present invention, FIG. 2 is a front view showing another similar example, and FIGS. 3 to 8 show a method for attaching a beret according to the present invention. FIG. 2 is a schematic explanatory diagram sequentially showing the assembly process of a semiconductor device using one embodiment. Explanation of symbols 1... Ribbon of resin material 2... Cut piece 3... Lead frame 4... Tab 5°... Semiconductor pellet
6... Wire 7 - Dispute - Renn Agent Patent Attorney Kunihiko Hayashi (In Figure 1) Figure 1) Figure 4 Figure S Figure 6 (211 Figure 7) Figure 8

Claims (1)

【特許請求の範囲】[Claims] １、片面中心部が凸状になっている樹脂材料片をベレッ
ト付は面上に載せ、その切断片上に半導体ベレットを載
せて被着することによりベレツト付けすることを特徴と
する半導体装置の製造法。1. Manufacture of a semiconductor device characterized in that a piece of resin material having a convex center on one side is placed on the surface, and a semiconductor pellet is placed on the cut piece and adhered to form a belet. Law.
JP58153800A 1983-08-23 1983-08-23 Manufacture of semiconductor device Pending JPS6045030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58153800A JPS6045030A (en) 1983-08-23 1983-08-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58153800A JPS6045030A (en) 1983-08-23 1983-08-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6045030A true JPS6045030A (en) 1985-03-11

Family

ID=15570398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58153800A Pending JPS6045030A (en) 1983-08-23 1983-08-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6045030A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988003704A1 (en) * 1986-11-13 1988-05-19 M & T Chemicals, Inc. Attachment of semiconductor die to lead frame by means of an adhesive resin

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988003704A1 (en) * 1986-11-13 1988-05-19 M & T Chemicals, Inc. Attachment of semiconductor die to lead frame by means of an adhesive resin

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