WO1988003704A1 - Fixation d'un de de semiconducteur a un cadre de montage a conducteurs au moyen d'une resine adhesive - Google Patents

Fixation d'un de de semiconducteur a un cadre de montage a conducteurs au moyen d'une resine adhesive Download PDF

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Publication number
WO1988003704A1
WO1988003704A1 PCT/US1987/002952 US8702952W WO8803704A1 WO 1988003704 A1 WO1988003704 A1 WO 1988003704A1 US 8702952 W US8702952 W US 8702952W WO 8803704 A1 WO8803704 A1 WO 8803704A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive
die
substrate
heating
lead frame
Prior art date
Application number
PCT/US1987/002952
Other languages
English (en)
Inventor
William N. Bolster
Stanley A. Marcus
Lincoln Ying
Original Assignee
M & T Chemicals, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by M & T Chemicals, Inc. filed Critical M & T Chemicals, Inc.
Priority to BR8707876A priority Critical patent/BR8707876A/pt
Priority to KR1019880700809A priority patent/KR910006966B1/ko
Publication of WO1988003704A1 publication Critical patent/WO1988003704A1/fr

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/0665—Epoxy resin
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    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • This invention pertains to the assembly of semiconductor devices and more particularly to processes and equipment for attaching dies to lead frames using a polymer based die attach adhesive.
  • thermosonic bonding at temperatures ranging from about room temperature to about 300oC; or by
  • thermocompression bonding which is a process employing pressure in conjunction with temperatures up to about 300oC, or above.
  • the adhesives used for bonding the dies to the lead frame can be:
  • one or more pads can serve as grounds allowing current to exit through the leads.
  • thermal or non-conductive adhesives are used as the die bonding material.
  • the currently used polymer based adhesives in this art are epoxy resins and polyamic acids which are cured to polyimides. It is an object of this invention to provide an improved method for fabricating semiconductor devices.
  • Apparatus for carrying out the method above comprises:
  • (B) means for dispensing an adhesive onto said die placement areas as the substrate moves through the assembly operation
  • (E) means for selecting and depositing dies onto the heated adhesive on the substrate
  • (F) optional postheat means for optionally heating the die-adhesive substrate assembly as the substrate moves down the assembly line.
  • the substrate material of construction is not critical.
  • the substrate therefore can be a metal lead frame, a ceramic or a ceramic package, a ceramic hybrid or a like material.
  • the heating means for heating the adhesive can be any suitable heating device known to those skilled in the art, as for example, a heated platen, a stream of heated air or nitrogen, a laser beam, an infra-red lamp, and the like.
  • the post heat means is not limited to any particular means but also can be a heated platen, infra-red heating means, heated air or nitrogen, microwave or induction heaters, and the like.
  • Figure 1 is a view in perspective schematically delineating the steps of one version of the instant invention using an adhesive paste.
  • Figure 2 is also a view in perspective of another version of the invention using an adhesive ribbon.
  • the adhesive is a polymer-based composition; thus, it can be based on a thermoplastic resin as well as a curable or hardenable thermosetting resin.
  • the adhesive can be in the form of a paste, a film, a tape, a foil or a ribbon.
  • the preferred adhesive resin compositions used herein are the thermoplastic paste or ribbon resin compositions because these compositions tend to result in less residual stress on the chip or die than thermoset or curable products that undergo chemical reaction during heating.
  • Pastes are highly viscous, non-solid mixtures of solid particles dispersed in a liquid suspending medium or solvent.
  • Films, tapes, foils, and ribbons may be distinguished from pastes, rheologically, in that they are not viscous. Tapes, foils and ribbons can be supported or unsupported and can be used with release agents to preclude blocking when being unrolled from a dispenser.
  • thermoplastic resin components useful in the practice of this invention should be room temperature stable, flexible, heat activatable and heat resistant. They should not lose their rheological properties at low temperatures or embrittle with age. They preferably should be soluble in organic solvents which can be readily removed without leaving traces of solvent adhering to or complexed with the resin. They should be water resistant, exhibit excellent adhesion to metals and die, accept a high conductivity filler loading and have a low volume resistivity value.
  • thermoplastic resins include thermoplastic polyhydroxyethers (phenoxy resins) described in U.S. No. 3,177,090 and 3,395,118; polyimides described in U.S. No. 3,410,875 and 3,615,913; polyarylene polyether polysulfone resins described in U.S. No. 3,933,764 as well as polyphenylene oxides and other low stress, high temperature thermoplastic polarylate resins referred to as structural or high performance adhesive resins.
  • phenoxy resins phenoxy resins
  • polyimides described in U.S. No. 3,410,875 and 3,615,913
  • polyarylene polyether polysulfone resins described in U.S. No. 3,933,764 as well as polyphenylene oxides and other low stress, high temperature thermoplastic polarylate resins referred to as structural or high performance adhesive resins.
  • Thermoplastic resins containing alpha, beta-ethylenically unsaturated hydrocarbon groups polymerized therein which are not corrosive to metals commonly used in semiconductor packages can also be used if their second order transition temperatures are high enough to preclude shifting of dies after being adhesively bonded to a substrate.
  • halogenated vinyls such as, polyvinyl chloride, polyvinylidene chloride, vinyl chloride-alpha-olefin copolymers, acrylic or methacrylic acid copolymers, chloroprene, acrylonitrile polymers and the like are unsatisfactory.
  • thermoplastic resin used in the adhesive compositions of this invention are the siloxane-modified polyimides prepared as described in U.S. Patents No. 3,440,527, 3,575,923, 3,875,116 and 4,395,527 the teachings of which are incorporated herein by reference.
  • the adhesive paste composition comprises:
  • thermoplastic resin (a) about 5% to about 75% by weight of the thermoplastic resin and preferably 5% to 85% by weight;
  • (c) about 0% to about 50% by weight of an organic solvent and preferably 20% to 50% by weight.
  • Other additives to adjust viscosity, rheology, tack and other physical properities of the wet paste or dried adhesive can be included in the composition if desired.
  • the electrically conductive filler can be any metal used in the art, such as, silver, gold, platinum, palladium, iridium, mercury, ruthenium and osmium. Mixtures or alloys of these metals can also be used. However, the preferred metal is silver, either alone or alloyed with platinum or palladium.
  • the electrically conductive filler can also be coated on a glass or ceramic substrate to reduce cost or to modify the properties of the adhesive.
  • the thermally conductive filler can be beryllia, alumina, silica, oxides of antimony, magnesium, or zinc and the like.
  • thermosettlng resins are used as the polymer-based adhesive, one can choose from such commercially available materials as the epoxy resins, polyamic acids, maleimides and the like.
  • Suitable solvents include derivatives of monoalkyl and/or dialkyl ethers of ethylene glycol and condensed polyethylene glycols and/or cyclic ethers containing no less than a 5-member ring, such as, triethylene glycol dimethyl ether (triglyme), diethylene glycol dimethyl ether (diglyme) and ethylene glycol dimethyl ether (monoglyme); and N-methyl- 2-pyrrolidone, gamma-butryolactone, 2-(2-ethoxy) ethyl acetate (Carbitol acetate), 2-butoxyethyl acetate (butyl Cellosolve), and the like.
  • the preferred solvent is diglyme, particularly when the resin is a siloxane-modified polyimide.
  • the adhesive After evaporation of the solvent, the adhesive itself comprises about 5-50% by weight of the resin, preferably 8- 30% and 40-95% by weight of the metal, preferably 65-90%. If desired other materials can be added to the adhesive composition including rheological control agents, inert fillers, colorants and colloidal silica.
  • thermoplastic resins useful in formulating adhesive compositions can also be characterized by their second order glass transition temperatures. Such compositions should have a minimum value of 100oC and a maximum value of 285oC with a range of 150 -250oC being preferred.
  • the molecular weight (number average) of the siloxanemodified polyimide resins is in the range of about 50,000 to about 200,000.
  • thermoplastic resins have high resilience and flexibility characteristics enabling them to bond dies to lead frames in the practice of this invention without danger of stress cracking of the dies. Stress may be considered to be a function of crosslinking causing volume shrinkage which passes stress on to a chip. A creep mechanism enables thermoplastics to relax and to dissipate stress. This is a significant improvement over previously used resins, as for example epoxy resins, bis-maleimide resins, polyamic acid resins and the like, where the shrinkage which occurs upon curing also contributes to the creation of stress.
  • the application of the adhesive composition to the pre-designated areas of the lead frame can be effected by the use of a screen print, a syringe or a stamping mechanism (similar to off-set printing) where an arm picks up adhesive from a pot or reservoir and then moves to stamp the adhesive on the lead frame.
  • a screen print e.g., a syringe or a stamping mechanism (similar to off-set printing) where an arm picks up adhesive from a pot or reservoir and then moves to stamp the adhesive on the lead frame.
  • Mechanical problems, such as, voids or excess adhesive are resolved by programmed automatic dispensing techniques.
  • An unexpected advantage of the first version of the instant invention over the prior art methods is the time saving achieved by dispensing cold adhesive to a cold lead frame.
  • the heating means raises the temperature of the adhesive paste in 0.5-2.5 seconds, driving out the solvent and leaving a tacky thermoplastic adhesive spot on which the die is placed and bonded. Brief postheating may optimize solvent removal.
  • the lead frame with bonded die is then ready for the finishing steps of wire welding, encapsulation and separation into semiconduuctor packages.
  • activated is used in this invention to mean that state at which the resin in the adhesive composition functions to adhesively bond a die to a lead frame.
  • an adhesive resin paste composition containing or based on a thermoplastic resin it is the temperature at which sufficient organic solvent is removed to afford a hot thermoplastic resin with sufficient tack to exhibit adhesive properties sufficient to bond a die to a lead frame. After activation, these pastes are essentially solids. Where the solvent is diglyme, an effective activation temperature is about 200oC.
  • thermosetting resins they are activated in this invention when they are cured or crosslinked to a state where they function as adhesives for die bonding with or without the release of a solvent or vaporized liquid, such as water generated during the cure of a polyamic acid.
  • Activation temperatures can be from about 175oC to about 350oC.
  • This invention lends itself to incorporation in "jelly bean” IC techniques where the assembly lines run flat out at maximum speeds as well as hybrid and chip on board assemblies.
  • lead frame, 2 is passed as part of belt feed system, 3, in proximity to an adhesive composition dispensing means, 4, which can be screen printing, a syringe or a print stamper which deposits small premeasured portions of a polymer-based adhesive paste composition, 6, at room temperature on the paddle, 8, of lead frame, 2.
  • the lead frame containing deposited paste composition, 6, passes through optional pre-heat means, 10, and then on to heated platen, 12, where the temperature of the paste composition, 6, is quickly raised to a temperature high enough to activate the adhesive. Where the solvent is diglyme this temperature can be from about 50o to about 200oC.
  • a transfer arm from die dispensing means, 14, deposits a die, 16, on the heated paste composition, 6, adhering to lead frame paddle, 8.
  • the composite of die, 16, bonded to paddle, 8, on lead frame, 2 passes through an optional heating means, 18, or directly without optional heating means, 18, to an apppropriate collector, such as a magazine, 20, en route to the wire bond step.
  • a lead frame, 22, is rted as part of a belt feed system, 24, through an 1 heating means, 26, to a position in contact with platen, 28, where the temperature of the paddle, 30, ed rapidly to a temperature high enough to activate ticular adhesive being used.
  • this temperature will be from about 250oC to 50oC.
  • Ribbon adhesive dispensing means, 32, equipped guillotine and applicator, 34 cuts and deposits a tab sive, 35, onto heated paddle, 30.
  • Immediately thereaftransfer arm of die dispensing means, 36 places a , on the tab of heated and activated adhesive adhering le, 30.
  • the composite of die, 37, bonded to paddle, lead frame, 22, passes on belt feed system, 24, through optional heating means, 38, or by-passes optional heating means, 38, going to a collector or magazine, 40, in preparation for the wire bonding step.
  • the invention described herein is preferably carried out in a continuous manner although it may also be practiced in an intermittently if so desired.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

On fabrique des modules à semiconducteurs en déposant d'abord une composition de résine adhésive (6) sur la plaquette (8) d'un cadre de montage à connecteurs (2), en activant la résine adhésive par élevation rapide de sa température, puis en déposant un dé (16) sur la résine adhésive activée. On passe ensuite aux étapes traditionnelles de soudage des fils conducteurs et d'encapsulage pour obtenir le module à semiconducteurs.
PCT/US1987/002952 1986-11-13 1987-11-12 Fixation d'un de de semiconducteur a un cadre de montage a conducteurs au moyen d'une resine adhesive WO1988003704A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
BR8707876A BR8707876A (pt) 1986-11-13 1987-11-12 Processo de fabricacao de dispositivos semicondutores
KR1019880700809A KR910006966B1 (ko) 1986-11-13 1987-11-12 접착제수지를 이용한 리드프레임에 대한 반도체 다이의 접착방법과 그 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93060086A 1986-11-13 1986-11-13
US930,600 1986-11-13

Publications (1)

Publication Number Publication Date
WO1988003704A1 true WO1988003704A1 (fr) 1988-05-19

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PCT/US1987/002952 WO1988003704A1 (fr) 1986-11-13 1987-11-12 Fixation d'un de de semiconducteur a un cadre de montage a conducteurs au moyen d'une resine adhesive

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Country Link
EP (1) EP0333734A1 (fr)
JP (1) JPH01502868A (fr)
KR (1) KR910006966B1 (fr)
CN (1) CN87107692A (fr)
BR (1) BR8707876A (fr)
WO (1) WO1988003704A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409004A2 (fr) * 1989-07-21 1991-01-23 Kabushiki Kaisha Toshiba Dispositif semi-conducteur scellé du verre à bas point de fusion et son procédé de fabrication
EP0409257A2 (fr) * 1989-07-21 1991-01-23 Kabushiki Kaisha Toshiba Dispositif semiconducteur scellé du verre à bas point de fusion et procédé de fabrication
WO1991003835A1 (fr) * 1989-09-05 1991-03-21 Hughes Aircraft Company Adhesif de fixation amovible de matrice epoxy
EP0461316A1 (fr) * 1989-03-28 1991-12-18 General Electric Company Attachement d'un dé semi-conducteur
WO1993002538A1 (fr) * 1991-07-19 1993-02-04 Mannesmann Ag Procede pour la realisation d'une laison par adherence entre au moins un composant et un substrat metallique
US5237206A (en) * 1989-07-21 1993-08-17 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
EP0645805A2 (fr) * 1993-09-29 1995-03-29 Matsushita Electric Industrial Co., Ltd. Procédé pour le montage d'un dispositif semi-conducteur au-dessus d'un panneau de circuit, et un panneau de circuit comprenant un dispositif semi-conducteur la-dessus
EP1246236A1 (fr) * 2001-03-30 2002-10-02 Lintec Corporation Ruban/feuille adhésive supportant des puces semiconducteurs, support d'un puce semiconducteur, procédé de son montage et son corps d'emballage
US7517722B2 (en) 2002-08-29 2009-04-14 Infineon Technologies Ag Method of producing a universal semiconductor housing with precrosslinked plastic embedding compounds

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144082A (ja) * 1998-11-16 2000-05-26 Minnesota Mining & Mfg Co <3M> 熱硬化性接着剤組成物、接着剤、および接着剤の製造方法
KR100576886B1 (ko) * 2000-08-30 2006-05-03 앰코 테크놀로지 코리아 주식회사 반도체패키지의 제조 방법
KR100819794B1 (ko) * 2002-04-02 2008-04-07 삼성테크윈 주식회사 리드프레임 및, 그것을 이용한 반도체 패키지 제조 방법
WO2009006284A2 (fr) * 2007-06-28 2009-01-08 Sandisk Corporation Dé semi-conducteur doté d'une couche de redistribution
JP6033734B2 (ja) * 2013-04-30 2016-11-30 日東電工株式会社 フィルム状接着剤、ダイシングテープ一体型フィルム状接着剤、及び、半導体装置の製造方法
DE102015107724B4 (de) * 2015-04-02 2016-12-01 Heraeus Deutschland GmbH & Co. KG Verfahren zum Herstellen einer Substratanordnung, Substratanordnung, Verfahren zum Verbinden eines Elektronikbauteils mit einer Substratanordnung und Elektronikbauteil

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029628A (en) * 1974-05-22 1977-06-14 The United States Of America As Represented By The Secretary Of The Navy Bonding material for planar electronic device
EP0051165A1 (fr) * 1980-11-03 1982-05-12 BURROUGHS CORPORATION (a Michigan corporation) Boîtier réparable à circuits intégrés fixés par un produit thermoplastique
JPS59931A (ja) * 1982-06-25 1984-01-06 Mitsubishi Electric Corp 半導体素子のマウント方法
JPS6045030A (ja) * 1983-08-23 1985-03-11 Hitachi Chem Co Ltd 半導体装置の製造法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211154A (en) * 1975-07-17 1977-01-27 Shoei Chemical Ind Co Electrode material for wire welding
JPS57152135A (en) * 1981-03-13 1982-09-20 Yamagata Nippon Denki Kk Manufacture of semiconductor device
EP0065686A3 (fr) * 1981-05-21 1984-10-10 General Electric Company Module à dispositif de puissance
JPS6066440A (ja) * 1983-09-21 1985-04-16 Fujitsu Ltd 半導体装置の製造方法
JPS6110246A (ja) * 1984-06-26 1986-01-17 Hitachi Chem Co Ltd 半導体装置の製造法
JPS61164233A (ja) * 1985-01-17 1986-07-24 Oki Electric Ind Co Ltd ダイボンデイング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029628A (en) * 1974-05-22 1977-06-14 The United States Of America As Represented By The Secretary Of The Navy Bonding material for planar electronic device
EP0051165A1 (fr) * 1980-11-03 1982-05-12 BURROUGHS CORPORATION (a Michigan corporation) Boîtier réparable à circuits intégrés fixés par un produit thermoplastique
JPS59931A (ja) * 1982-06-25 1984-01-06 Mitsubishi Electric Corp 半導体素子のマウント方法
JPS6045030A (ja) * 1983-08-23 1985-03-11 Hitachi Chem Co Ltd 半導体装置の製造法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, volume 8, no. 81 (E-238)(1518), 13 April 1984 & JP-A-59 000931 (MITSUBISHI DENKI K.K.) 6 January 1984 *
Patent Abstracts of Japan, volume 9, no. 173 (E-329)(1896), 18 July 1985 & JP-A-60 045030 (HITACHI KASEI KOGYO K.K.) 11 March 1985 *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0461316A1 (fr) * 1989-03-28 1991-12-18 General Electric Company Attachement d'un dé semi-conducteur
EP0409004A2 (fr) * 1989-07-21 1991-01-23 Kabushiki Kaisha Toshiba Dispositif semi-conducteur scellé du verre à bas point de fusion et son procédé de fabrication
EP0409257A2 (fr) * 1989-07-21 1991-01-23 Kabushiki Kaisha Toshiba Dispositif semiconducteur scellé du verre à bas point de fusion et procédé de fabrication
EP0409004A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
EP0409257A3 (en) * 1989-07-21 1991-04-03 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
US5237206A (en) * 1989-07-21 1993-08-17 Kabushiki Kaisha Toshiba Low-melting point glass sealed semiconductor device and method of manufacturing the same
WO1991003835A1 (fr) * 1989-09-05 1991-03-21 Hughes Aircraft Company Adhesif de fixation amovible de matrice epoxy
WO1993002538A1 (fr) * 1991-07-19 1993-02-04 Mannesmann Ag Procede pour la realisation d'une laison par adherence entre au moins un composant et un substrat metallique
EP0645805A2 (fr) * 1993-09-29 1995-03-29 Matsushita Electric Industrial Co., Ltd. Procédé pour le montage d'un dispositif semi-conducteur au-dessus d'un panneau de circuit, et un panneau de circuit comprenant un dispositif semi-conducteur la-dessus
EP0645805A3 (fr) * 1993-09-29 1995-04-12 Matsushita Electric Ind Co Ltd
US5651179A (en) * 1993-09-29 1997-07-29 Matsushita Electric Industrial Co., Ltd. Method for mounting a semiconductor device on a circuit board
US5670826A (en) * 1993-09-29 1997-09-23 Matsushita Electric Industrial Co., Ltd. Method for mounting a semiconductor device on a circuit board using a conductive adhesive and a thermosetting resin, and a circuit board with a semiconductor device mounted thereon using the method
EP1246236A1 (fr) * 2001-03-30 2002-10-02 Lintec Corporation Ruban/feuille adhésive supportant des puces semiconducteurs, support d'un puce semiconducteur, procédé de son montage et son corps d'emballage
US6753614B2 (en) 2001-03-30 2004-06-22 Lintec Corporation Semiconductor chip carrying adhesive tape/sheet, semiconductor chip carrier, and semiconductor chip packaging body
US6924211B2 (en) 2001-03-30 2005-08-02 Lintec Corporation Semiconductor chip carrying adhesive tape/sheet, semiconductor chip carrier, semiconductor chip mounting method and semiconductor chip packaging body
US7517722B2 (en) 2002-08-29 2009-04-14 Infineon Technologies Ag Method of producing a universal semiconductor housing with precrosslinked plastic embedding compounds

Also Published As

Publication number Publication date
JPH01502868A (ja) 1989-09-28
CN87107692A (zh) 1988-05-25
BR8707876A (pt) 1990-03-01
EP0333734A1 (fr) 1989-09-27
KR890700267A (ko) 1989-03-10
KR910006966B1 (ko) 1991-09-14

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