EP0189087B1 - Spannungsabhängiger elektrischer Widerstand (Varistor) - Google Patents

Spannungsabhängiger elektrischer Widerstand (Varistor) Download PDF

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Publication number
EP0189087B1
EP0189087B1 EP86100376A EP86100376A EP0189087B1 EP 0189087 B1 EP0189087 B1 EP 0189087B1 EP 86100376 A EP86100376 A EP 86100376A EP 86100376 A EP86100376 A EP 86100376A EP 0189087 B1 EP0189087 B1 EP 0189087B1
Authority
EP
European Patent Office
Prior art keywords
layers
varistor
voltage
weight
electrical resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP86100376A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0189087A1 (de
Inventor
Günter Dipl.-Ing. Ott
Franz Dr. Zettl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Bauelemente OHG
Siemens AG
Original Assignee
Siemens Bauelemente OHG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Bauelemente OHG, Siemens AG filed Critical Siemens Bauelemente OHG
Priority to AT86100376T priority Critical patent/ATE35344T1/de
Publication of EP0189087A1 publication Critical patent/EP0189087A1/de
Application granted granted Critical
Publication of EP0189087B1 publication Critical patent/EP0189087B1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1006—Thick film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/06546—Oxides of zinc or cadmium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type

Definitions

  • the invention relates to a voltage-dependent electrical resistor (varistor) consisting of a ceramic, monolithic body made of a large number of 20 to 350 ⁇ m thick layers of varistor material with grain sizes of 7 to 20 ⁇ m based on zinc oxide (ZnO) with up to 6 mol. % of additions of oxides of one or more of the metals Bi, Sb, Co, Ni, Cr, Mn, Mg, B, Al, Ba and serving as coatings, at most 10 ⁇ m thick noble metal layers, which alternate with the varistor material layers and alternate to different locations of the side surfaces of the body and there are electrically conductive and opposite polar contacts with other metal layers.
  • a voltage-dependent electrical resistor consisting of a ceramic, monolithic body made of a large number of 20 to 350 ⁇ m thick layers of varistor material with grain sizes of 7 to 20 ⁇ m based on zinc oxide (ZnO) with up to 6 mol. % of additions of oxides of one or more of the metals Bi, Sb,
  • Such a varistor is described in the publication “Advances in Ceramics” (American Ceram. Society, Columbus) 1981, Vol. 1, pages 349 to 358.
  • the average grain size is given there as 10 ⁇ m.
  • the response voltage per grain boundary is 2 to 3 V.
  • the information for the thickness of the varistor material layers is 20 to 200 ⁇ m, the properties of varistors having a layer thickness of 40 ⁇ m or 150 ⁇ m being measured with 20 layers stacked one on top of the other.
  • the non-linearity coefficient a is given as 20 to 30, while the varistor voltage, measured at 1 mA, is given as 4 to 40 volts.
  • Fired-in silver electrodes are specified as metal layers for contacting the coatings arranged alternately in the monolithic body on its surface. There is no further information about the material of the linings inside the monolithic body. There is also no information about the porosity of the material.
  • I 2 is an ampere
  • I 1 1 mA
  • U 2 is the voltage measured at 1 A
  • U is the voltage measured at 1 mA.
  • the voltage that is measured at 1 mA is defined as the varistor voltage on page 52.
  • the varistor voltage is used to classify varistors.
  • Varistors for low voltages so-called low-voltage varistors, which are manufactured using conventional technology, have grain sizes of approximately 100 ⁇ m and even larger in order to keep the number of grain boundaries between the layers low.
  • Low-voltage varistors manufactured in this way cannot generally be used to protect against higher voltages because the heat generated in the ceramic body cannot be dissipated.
  • the present invention has for its object to improve a voltage-dependent electrical resistance (varistor) of the type specified in such a way that the range of the varistor voltage is expanded so that in this way and from the same material, varistors with different varistor voltages can be produced that the The amount of palladium usually used for such components is reduced and that, last but not least, improved heat dissipation results.
  • varistor voltage-dependent electrical resistance
  • the low porosity which should preferably be less than 1%, ensures that the metal of the internal electrodes cannot penetrate into pores, which results in a shortened electrode gap, which leads to an early flashover (short circuit) when the pulse is loaded.
  • the reduction in the bismuth content from usually more than 2 mol% to at most 1 mol% and preferably 0.6 mol% has the effect that, on the one hand, the grain growth is reduced and thus the grain size distribution is evened out, and on the other hand, that the reaction of the deposits with the Ceramic material is avoided at the sintering temperature, which prevents alloying of the palladium with the consequence of the island formation of the deposits.
  • the toppings preferably consist of 70% by weight of silver and 30% by weight of palladium.
  • the ceramic body consists of varistor material layers, the thickness of which is in the range from 35 ⁇ m to 350 ⁇ m, thicker layers resulting in higher varistor voltages in the range from 4 volts to 350 volts.
  • the varistor body is preferably 1 to 10 mm long, 1 to 3.6 mm wide and 0.5 to 3 mm thick where where the thickness is always less than the smallest length or width.
  • the low bismuth content enables sintering temperatures of up to 1150 ° C, which means that with thin layer thicknesses and a corresponding number of layers, varistors can be produced with a varistor voltage down to 4 V.
  • varistors are manufactured using multilayer technology in the same way as is known, for example, for ceramic multilayer capacitors.
  • organic binder materials e.g. polymethyl acrylates, methyl cellulose, polyvinyl alcohol
  • solvents e.g. water, ethyl methyl ketone
  • plasticizers phthalates, esters
  • a sample of the inner coverings made from the specified silver-palladium compound is applied to pieces of postcard size in this way, after which a corresponding number of such postcard-sized films are stacked on top of one another such that the alternating displacement of the coverings results in the finished body.
  • the layer varistor is separated from the stack in its raw form and - after passing through a tempering and binder burnout cycle common in multi-layer technology - sintered at temperatures up to 1150 ° C.
  • the varistor body 1 is shown schematically, which consists of layers 2 of varistor material.
  • the coverings 3 and 4 alternate with varistor material layers 2, the coverings 3 in the present case being guided to the right outer surface 5 and the coverings 4 to the left outer surface 6 of the ceramic body.
  • the ceramic body 1 consists of a monolithic block, in the interior of which the coatings 3 and 4 are arranged. It is also possible for the coverings 3 and 4 to protrude on the same side of the monolithic block, the ends to be contacted then alternatingly ending at different locations on this surface side and being contacted there with opposite poles.
  • opposite-pole means that the coatings 3 on the surface 5 with a further metal layer 7, e.g. made of silver or another solderable metal, which is connected to a pole of the voltage source or the circuit, while the coatings 4 on the surface side 6 by the further metal layer 8, also made of silver or the like, connected to each other The opposite pole of the voltage source or the circuit are connected.
  • Reference number 9 denotes the thickness of the layers 2 made of varistor material.
  • a prerequisite for the operation of the varistor is that the distances 10 and 11 between the top layer 3 and the bottom layer 4 and the surface 14 or the surface 15, as well as the distances 12 of the layers 3 from the metal layer 8 and the distances 13 of the metal layers 4 to the metal layer 7 are each greater than the thickness 9 of the layers 2 made of varistor material.
  • varistor material layers 2 ′ are present, for example, which do not contain any coatings 3 or 4. In FIG. 1, this is due to the boundary lines 16 and 17 between the top layer 2 provided with a covering 3 and the layer 2 ′ without a covering or between the lower layer 2 provided with the covering 4 and the layer 2 without a covering 'shown.
  • the varistor according to the invention can be provided with power supply wires 18 and 19, which are soldered to the metal layers 7 or 8 or attached in some other way.
  • the varistor according to the invention is to be used as a chip by placing it on and attaching it to contact points on printed conductor tracks, then instead of the current supply wires there may be contact surfaces which, in the present example, through the extensions 20 and 21 in the metal layer 7 on the surfaces 14 and 15, and are represented by extensions 22 and 23 of the metal layer 8 on the surfaces 14 and 15.
  • the grid spacing 24 between the power supply wires 18 and 19 is to be defined, as is known per se for such components.
  • the necessary spacing 25 between the extensions 20 and 22 or 21 and 23 can be determined by appropriate choice of dimensions.
  • the UI diagram shown in FIG. 2 shows one of the advantages of the present invention, which consists in the fact that the small amount of bismuth in the varistor material and the possible use of silver in larger amounts for the coatings 3 and 4 compared to the palladium make alloying away of the metal of the coverings and thus an island formation which deteriorates the properties does not occur.
  • the island formation which is caused by alloying away the linings (migration), causes the terminal voltage to rise sharply at high currents, because the series resistance of the linings increases sharply due to this island formation.
  • FIG. 3 shows a U-I diagram in which a varistor of the present invention (curve 30) is compared with known varistors (curves 28 and 29).
  • curve 30 a varistor of the present invention
  • curves 28 and 29 known varistors
  • Curve 28 applies to varistors which consist of 20 varistor material layers each with a thickness of 40 gm, while curve 29 applies to known varistors with 20 varistor material layers each 150 ⁇ m thick.
  • Curve 30 applies to varistors of the present invention made of 50 layers each 30 ⁇ m thick.
  • the heat dissipation from the body with coatings of 70% silver and 30% palladium, each with a thickness of 2.0 ⁇ m, is sufficiently large to ensure the functionality of the varistor To ensure even at high currents or voltages.
  • the diagram according to FIG. 4 shows the varistor voltage as a function of the sintering temperature at a sintering time of one hour for varistors which consist of 10 layers, with different layer thicknesses being present.
  • the varistor voltage is given in volts on the ordinate and the sintering temperature t s in ° C on the abscissa.
  • the coatings consist of 70% silver and 30% palladium and are 2 ⁇ m thick.
  • Curve 31 applies to varistors with 10 layers, each with a layer thickness of 165 ⁇ m.
  • Curve 32 applies to varistors consisting of 10 layers with a layer thickness of 77 pm each.
  • Curve 33 applies to varistors with 10 layers each with a thickness of 37 ⁇ m and curve 34 applies to varistors with 10 layers each with a layer thickness of 23 p.m.
  • the protection level of varistors is the terminal voltage of a current pulse of the indicated current intensity that occurs at a varistor.
  • the terminal voltage is shown in volts on the ordinate, while the sintering temperature t s is given in ° C on the abscissa.
  • the specified varistor material ensures a dielectric strength of 300 V / mm, which ensures sufficient slope (non-linearity exponent a) even with thin layers.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)
EP86100376A 1985-01-17 1986-01-13 Spannungsabhängiger elektrischer Widerstand (Varistor) Expired EP0189087B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT86100376T ATE35344T1 (de) 1985-01-17 1986-01-13 Spannungsabhaengiger elektrischer widerstand (varistor).

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3501419 1985-01-17
DE3501419 1985-01-17

Publications (2)

Publication Number Publication Date
EP0189087A1 EP0189087A1 (de) 1986-07-30
EP0189087B1 true EP0189087B1 (de) 1988-06-22

Family

ID=6260071

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86100376A Expired EP0189087B1 (de) 1985-01-17 1986-01-13 Spannungsabhängiger elektrischer Widerstand (Varistor)

Country Status (5)

Country Link
US (1) US4675644A (enrdf_load_stackoverflow)
EP (1) EP0189087B1 (enrdf_load_stackoverflow)
JP (1) JPS61170005A (enrdf_load_stackoverflow)
AT (1) ATE35344T1 (enrdf_load_stackoverflow)
DE (1) DE3660342D1 (enrdf_load_stackoverflow)

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DE3725454A1 (de) * 1987-07-31 1989-02-09 Siemens Ag Elektrisches vielschichtbauelement mit einem gesinterten, monolithischen keramikkoerper und verfahren zur herstellung des elektrischen vielschichtbauelementes
DE3725455A1 (de) * 1987-07-31 1989-02-09 Siemens Ag Elektrisches vielschichtbauelement mit einem gesinterten, monolithischen keramikkoerper und verfahren zur herstellung des elektrischen vielschichtbauelementes
EP0302294B1 (de) * 1987-07-31 1992-07-29 Siemens Aktiengesellschaft Füllschichtbauteil mit einem gesinterten, monolithischen Keramikkörper und Verfahren zu dessen Herstellung
JP2552309B2 (ja) * 1987-11-12 1996-11-13 株式会社明電舎 非直線抵抗体
US5075665A (en) * 1988-09-08 1991-12-24 Murata Manufacturing Co., Ltd. Laminated varistor
JPH077613B2 (ja) * 1990-02-02 1995-01-30 東京電力株式会社 懸垂型避雷碍子
GB2242068C (en) * 1990-03-16 1996-01-24 Ecco Ltd Varistor manufacturing method and apparatus
GB2242066B (en) * 1990-03-16 1994-04-27 Ecco Ltd Varistor structures
US5973588A (en) 1990-06-26 1999-10-26 Ecco Limited Multilayer varistor with pin receiving apertures
GB2242065C (en) * 1990-03-16 1996-02-08 Ecco Ltd Varistor ink formulations
US6183685B1 (en) 1990-06-26 2001-02-06 Littlefuse Inc. Varistor manufacturing method
EP0476657A1 (de) * 1990-09-21 1992-03-25 Siemens Aktiengesellschaft Thermistor mit negativem Temperaturkoeffizienten in Vielschicht-Technologie
DE4030479C2 (de) * 1990-09-26 1993-11-25 Siemens Ag Elektrischer Widerstand in Chip-Bauform
JP3121119B2 (ja) * 1992-06-16 2000-12-25 ローム株式会社 積層セラミックコンデンサの外部電極の形成方法
JP2674523B2 (ja) * 1993-12-16 1997-11-12 日本電気株式会社 セラミック配線基板とその製造方法
JP3077056B2 (ja) * 1996-09-12 2000-08-14 株式会社村田製作所 積層型電子部品
KR19990077150A (ko) * 1996-11-11 1999-10-25 조란 지빅 다층 산화아연 다결정 다이오드
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US6444504B1 (en) 1997-11-10 2002-09-03 Zoran Zivic Multilayer ZnO polycrystallin diode
JPH11273914A (ja) * 1998-03-26 1999-10-08 Murata Mfg Co Ltd 積層型バリスタ
US5999398A (en) * 1998-06-24 1999-12-07 Avx Corporation Feed-through filter assembly having varistor and capacitor structure
DE19903456A1 (de) * 1999-01-28 2000-08-10 Philips Corp Intellectual Pty Mehrkomponenten-Bauteil
DE19931056B4 (de) 1999-07-06 2005-05-19 Epcos Ag Vielschichtvaristor niedriger Kapazität
JP3498211B2 (ja) * 1999-12-10 2004-02-16 株式会社村田製作所 積層型半導体セラミック電子部品
US6717506B2 (en) * 2000-11-02 2004-04-06 Murata Manufacturing Co., Ltd. Chip-type resistor element
US20050212648A1 (en) * 2004-03-23 2005-09-29 Inpaq Technology Co., Ltd. Low-capacitance laminate varistor
GB2439862A (en) 2005-03-01 2008-01-09 X2Y Attenuators Llc Conditioner with coplanar conductors
DE102005028498B4 (de) * 2005-06-20 2015-01-22 Epcos Ag Elektrisches Vielschichtbauelement
JP2013541852A (ja) * 2010-11-03 2013-11-14 エプコス アーゲー 積層セラミック部品及び積層セラミック部品の製造方法
WO2014101030A1 (en) * 2012-12-27 2014-07-03 Littelfuse, Inc. Zinc oxide based varistor and fabrication method
DE102015120640A1 (de) 2015-11-27 2017-06-01 Epcos Ag Vielschichtbauelement und Verfahren zur Herstellung eines Vielschichtbauelements
DE102016104990A1 (de) * 2016-03-17 2017-09-21 Epcos Ag Keramikmaterial, Varistor und Verfahren zum Herstellen des Keramikmaterials und des Varistors
TWI667667B (zh) * 2016-09-26 2019-08-01 立昌先進科技股份有限公司 一種提高多層貼片式變阻器通流面積的製法及其製得的變阻器元件
US11545284B2 (en) * 2019-01-16 2023-01-03 Panasonic Intellectual Property Management Co., Ltd. Varistor assembly
US11315709B2 (en) * 2019-12-20 2022-04-26 Hubbell Incorporated Metal oxide varistor formulation

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DE1282119B (de) * 1966-05-18 1968-11-07 Siemens Ag Verfahren zum Herstellen von elektrischen Bauelementen unter Anwendung der Duennfolienmethode
JPS5823921B2 (ja) * 1978-02-10 1983-05-18 日本電気株式会社 電圧非直線抵抗器
FR2523993A1 (fr) * 1982-03-24 1983-09-30 Cables De Lyon Geoffroy Delore Pate serigraphiable a oxydes metalliques et produit obtenu avec cette pate

Also Published As

Publication number Publication date
US4675644A (en) 1987-06-23
EP0189087A1 (de) 1986-07-30
ATE35344T1 (de) 1988-07-15
JPH0353761B2 (enrdf_load_stackoverflow) 1991-08-16
JPS61170005A (ja) 1986-07-31
DE3660342D1 (en) 1988-07-28

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