DE69932560T2 - Aluminiumkomplexderivate zur chemischen Vakuumverdampfung und Verfahren zu deren Herstellung - Google Patents
Aluminiumkomplexderivate zur chemischen Vakuumverdampfung und Verfahren zu deren Herstellung Download PDFInfo
- Publication number
- DE69932560T2 DE69932560T2 DE69932560T DE69932560T DE69932560T2 DE 69932560 T2 DE69932560 T2 DE 69932560T2 DE 69932560 T DE69932560 T DE 69932560T DE 69932560 T DE69932560 T DE 69932560T DE 69932560 T2 DE69932560 T2 DE 69932560T2
- Authority
- DE
- Germany
- Prior art keywords
- aluminum
- formula
- alkyl group
- carbon number
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims description 60
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 45
- 230000008569 process Effects 0.000 title claims description 21
- 238000001704 evaporation Methods 0.000 title description 11
- 230000008020 evaporation Effects 0.000 title description 11
- 239000000126 substance Substances 0.000 title description 10
- 238000002360 preparation method Methods 0.000 title description 7
- 150000001875 compounds Chemical class 0.000 claims description 55
- 239000002243 precursor Substances 0.000 claims description 41
- 125000000217 alkyl group Chemical group 0.000 claims description 26
- -1 heterocyclic amine Chemical class 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 238000007740 vapor deposition Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 claims description 17
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 claims description 17
- 150000007527 lewis bases Chemical class 0.000 claims description 17
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 claims description 16
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 239000002879 Lewis base Substances 0.000 claims description 14
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 12
- 150000001412 amines Chemical class 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 150000002902 organometallic compounds Chemical class 0.000 claims description 8
- HTLZVHNRZJPSMI-UHFFFAOYSA-N N-ethylpiperidine Chemical compound CCN1CCCCC1 HTLZVHNRZJPSMI-UHFFFAOYSA-N 0.000 claims description 7
- 229930192474 thiophene Natural products 0.000 claims description 6
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 claims description 6
- JSHASCFKOSDFHY-UHFFFAOYSA-N 1-butylpyrrolidine Chemical compound CCCCN1CCCC1 JSHASCFKOSDFHY-UHFFFAOYSA-N 0.000 claims description 4
- HVCNXQOWACZAFN-UHFFFAOYSA-N 4-ethylmorpholine Chemical compound CCN1CCOCC1 HVCNXQOWACZAFN-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- XULIXFLCVXWHRF-UHFFFAOYSA-N 1,2,2,6,6-pentamethylpiperidine Chemical compound CN1C(C)(C)CCCC1(C)C XULIXFLCVXWHRF-UHFFFAOYSA-N 0.000 claims description 3
- IGNGFGXAWDQJGP-UHFFFAOYSA-N 1,3-dimethylpyrrolidine Chemical compound CC1CCN(C)C1 IGNGFGXAWDQJGP-UHFFFAOYSA-N 0.000 claims description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000007788 liquid Substances 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 8
- 238000005019 vapor deposition process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000725 suspension Substances 0.000 description 7
- 238000005481 NMR spectroscopy Methods 0.000 description 6
- 239000012280 lithium aluminium hydride Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 0 CCCC*CCCCN Chemical compound CCCC*CCCCN 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910000086 alane Inorganic materials 0.000 description 2
- 125000005234 alkyl aluminium group Chemical group 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- JACMPVXHEARCBO-UHFFFAOYSA-N CCCCCNCCCCC Chemical compound CCCCCNCCCCC JACMPVXHEARCBO-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- 229910010082 LiAlH Inorganic materials 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/069—Aluminium compounds without C-aluminium linkages
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR9814522 | 1998-04-23 | ||
| KR19980014522A KR100279067B1 (ko) | 1998-04-23 | 1998-04-23 | 화학증착용알루미늄화합물및그제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69932560D1 DE69932560D1 (de) | 2006-09-14 |
| DE69932560T2 true DE69932560T2 (de) | 2007-10-18 |
Family
ID=36915015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69932560T Expired - Fee Related DE69932560T2 (de) | 1998-04-23 | 1999-04-14 | Aluminiumkomplexderivate zur chemischen Vakuumverdampfung und Verfahren zu deren Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6143357A (enExample) |
| EP (1) | EP0952156B1 (enExample) |
| JP (1) | JP4198820B2 (enExample) |
| KR (1) | KR100279067B1 (enExample) |
| DE (1) | DE69932560T2 (enExample) |
| SG (1) | SG83121A1 (enExample) |
| TW (1) | TW562800B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100316760B1 (ko) * | 1999-06-11 | 2001-12-12 | 신현국 | 알루미나 박막의 화학 증착용 전구체 화합물 및 이의 제조방법 |
| US7223823B2 (en) * | 2002-06-06 | 2007-05-29 | Exxon Mobil Chemical Patents Inc. | Catalyst system and process |
| US7199072B2 (en) * | 2002-12-31 | 2007-04-03 | Univation Technologies, Llc | Process of producing a supported mixed catalyst system and polyolefins therefrom |
| US7098339B2 (en) * | 2005-01-18 | 2006-08-29 | Praxair Technology, Inc. | Processes for the production of organometallic compounds |
| JP5093448B2 (ja) * | 2005-01-19 | 2012-12-12 | Ｊｓｒ株式会社 | トレンチ埋め込み方法 |
| US7348445B2 (en) | 2005-02-14 | 2008-03-25 | Praxair Technology, Inc. | Organoaluminum precursor compounds |
| KR100724084B1 (ko) * | 2005-11-16 | 2007-06-04 | 주식회사 유피케미칼 | 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법 |
| KR100756403B1 (ko) * | 2006-05-18 | 2007-09-10 | (주)디엔에프 | 알루미늄 박막의 화학증착용 전구체 화합물의 제조방법 |
| KR100829472B1 (ko) * | 2006-05-18 | 2008-05-16 | (주)디엔에프 | 알루미늄 박막의 화학증착용 전구체 화합물 및 이의제조방법 |
| US8142847B2 (en) * | 2007-07-13 | 2012-03-27 | Rohm And Haas Electronic Materials Llc | Precursor compositions and methods |
| JP4962311B2 (ja) * | 2007-12-27 | 2012-06-27 | セイコーエプソン株式会社 | 電子回路装置および電子機器 |
| JP2010241698A (ja) * | 2009-04-01 | 2010-10-28 | Air Water Inc | アミンアランの精製方法 |
| US20110206844A1 (en) | 2010-02-24 | 2011-08-25 | Jacob Grant Wiles | Chromium-free passivation of vapor deposited aluminum surfaces |
| JP5971248B2 (ja) * | 2011-07-21 | 2016-08-17 | Jsr株式会社 | 金属体を備える基体の製造方法 |
| US9255324B2 (en) * | 2012-08-15 | 2016-02-09 | Up Chemical Co., Ltd. | Aluminum precursor composition |
| US9994954B2 (en) | 2013-07-26 | 2018-06-12 | Versum Materials Us, Llc | Volatile dihydropyrazinly and dihydropyrazine metal complexes |
| CN111855723B (zh) * | 2020-06-11 | 2023-11-14 | 宁夏大学 | 一种粗大铝胞状晶组织形貌的直接三维显示方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB905985A (en) | 1959-02-24 | 1962-09-19 | Ethyl Corp | Preparing metal-alumino hydrides |
| JPS57188026A (en) | 1981-05-14 | 1982-11-18 | Minolta Camera Co Ltd | Driving device for photographing lens of automatic focusing camera |
| US4923717A (en) * | 1989-03-17 | 1990-05-08 | Regents Of The University Of Minnesota | Process for the chemical vapor deposition of aluminum |
| JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
| US5113025A (en) * | 1989-10-02 | 1992-05-12 | Ethyl Corporation | Selective reducing agents |
| US5178911A (en) * | 1989-11-30 | 1993-01-12 | The President And Fellows Of Harvard College | Process for chemical vapor deposition of main group metal nitrides |
| EP0448223B1 (en) * | 1990-02-19 | 1996-06-26 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride |
| US5136046A (en) * | 1990-09-28 | 1992-08-04 | Ethyl Corporation | Preparation of amine alanes |
| US5191099A (en) * | 1991-09-05 | 1993-03-02 | Regents Of The University Of Minnesota | Chemical vapor deposition of aluminum films using dimethylethylamine alane |
| US5900279A (en) | 1995-11-20 | 1999-05-04 | Tri Chemical Laboratory Inc. | Processes for the chemical vapor deposition and solvent used for the processes |
-
1998
- 1998-04-23 KR KR19980014522A patent/KR100279067B1/ko not_active Expired - Lifetime
-
1999
- 1999-03-22 US US09/274,258 patent/US6143357A/en not_active Expired - Lifetime
- 1999-04-13 SG SG9901666A patent/SG83121A1/en unknown
- 1999-04-13 TW TW088105809A patent/TW562800B/zh not_active IP Right Cessation
- 1999-04-14 EP EP99302890A patent/EP0952156B1/en not_active Expired - Lifetime
- 1999-04-14 DE DE69932560T patent/DE69932560T2/de not_active Expired - Fee Related
- 1999-04-23 JP JP11656799A patent/JP4198820B2/ja not_active Expired - Fee Related
-
2000
- 2000-06-16 US US09/596,115 patent/US6399772B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0952156A3 (en) | 2000-12-20 |
| JP4198820B2 (ja) | 2008-12-17 |
| US6143357A (en) | 2000-11-07 |
| DE69932560D1 (de) | 2006-09-14 |
| EP0952156B1 (en) | 2006-08-02 |
| KR100279067B1 (ko) | 2001-01-15 |
| KR19990080919A (ko) | 1999-11-15 |
| US6399772B1 (en) | 2002-06-04 |
| JP2000026474A (ja) | 2000-01-25 |
| SG83121A1 (en) | 2001-09-18 |
| EP0952156A2 (en) | 1999-10-27 |
| TW562800B (en) | 2003-11-21 |
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