DE69904129T2 - Aluminiumverbindungen zur Herstellung von Aluminiumschichten durch chemische Gasphasen-Abscheidung und deren Herstellung - Google Patents

Aluminiumverbindungen zur Herstellung von Aluminiumschichten durch chemische Gasphasen-Abscheidung und deren Herstellung

Info

Publication number
DE69904129T2
DE69904129T2 DE69904129T DE69904129T DE69904129T2 DE 69904129 T2 DE69904129 T2 DE 69904129T2 DE 69904129 T DE69904129 T DE 69904129T DE 69904129 T DE69904129 T DE 69904129T DE 69904129 T2 DE69904129 T2 DE 69904129T2
Authority
DE
Germany
Prior art keywords
production
aluminum
vapor deposition
chemical vapor
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69904129T
Other languages
English (en)
Other versions
DE69904129D1 (de
Inventor
Hyun-Koock Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UP Chemical Co Ltd
Original Assignee
Rohm and Haas Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Co filed Critical Rohm and Haas Co
Application granted granted Critical
Publication of DE69904129D1 publication Critical patent/DE69904129D1/de
Publication of DE69904129T2 publication Critical patent/DE69904129T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/06—Aluminium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/065—Aluminium compounds with C-aluminium linkage compounds with an Al-H linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
DE69904129T 1998-09-15 1999-09-01 Aluminiumverbindungen zur Herstellung von Aluminiumschichten durch chemische Gasphasen-Abscheidung und deren Herstellung Expired - Fee Related DE69904129T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980038572A KR100289945B1 (ko) 1998-09-15 1998-09-15 알루미늄박막의화학증착용전구체화합물및이의제조방법

Publications (2)

Publication Number Publication Date
DE69904129D1 DE69904129D1 (de) 2003-01-09
DE69904129T2 true DE69904129T2 (de) 2003-05-08

Family

ID=19551035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904129T Expired - Fee Related DE69904129T2 (de) 1998-09-15 1999-09-01 Aluminiumverbindungen zur Herstellung von Aluminiumschichten durch chemische Gasphasen-Abscheidung und deren Herstellung

Country Status (7)

Country Link
US (2) US6121443A (de)
EP (1) EP0987270B1 (de)
JP (1) JP2000086673A (de)
KR (1) KR100289945B1 (de)
DE (1) DE69904129T2 (de)
SG (1) SG79280A1 (de)
TW (1) TW486482B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100316760B1 (ko) * 1999-06-11 2001-12-12 신현국 알루미나 박막의 화학 증착용 전구체 화합물 및 이의 제조방법
US7098339B2 (en) * 2005-01-18 2006-08-29 Praxair Technology, Inc. Processes for the production of organometallic compounds
JP4711113B2 (ja) * 2005-03-14 2011-06-29 株式会社トリケミカル研究所 ＣＨ３ＡｌＨ２：Ｌの製造方法、Ａｌ系膜形成材料、Ａｌ系膜形成方法、及びＡｌ系配線膜形成方法
KR100696858B1 (ko) 2005-09-21 2007-03-20 삼성전자주식회사 유기 알루미늄 전구체 및 이를 이용한 금속배선 형성방법
KR100689668B1 (ko) 2005-09-26 2007-03-08 삼성전자주식회사 유기 알루미늄 전구체 및 이를 이용한 알루미늄 배선형성방법
KR100724084B1 (ko) * 2005-11-16 2007-06-04 주식회사 유피케미칼 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법
KR100829472B1 (ko) * 2006-05-18 2008-05-16 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물 및 이의제조방법
KR100756403B1 (ko) * 2006-05-18 2007-09-10 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물의 제조방법
KR101569224B1 (ko) * 2007-12-26 2015-11-13 제이에스알 가부시끼가이샤 알루미늄막 형성용 조성물 및 알루미늄막의 형성 방법
US8268722B2 (en) * 2009-06-03 2012-09-18 Novellus Systems, Inc. Interfacial capping layers for interconnects
US20110206844A1 (en) * 2010-02-24 2011-08-25 Jacob Grant Wiles Chromium-free passivation of vapor deposited aluminum surfaces
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
EP3957769A1 (de) * 2017-12-20 2022-02-23 Basf Se Verfahren zur erzeugung von metallhaltigen filmen
JP7401928B2 (ja) 2018-07-30 2023-12-20 ユーピー ケミカル カンパニー リミテッド アルミニウム化合物及びこれを使用したアルミニウム含有膜の形成方法

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Publication number Priority date Publication date Assignee Title
GB905985A (en) 1959-02-24 1962-09-19 Ethyl Corp Preparing metal-alumino hydrides
JPS57188026A (en) 1981-05-14 1982-11-18 Minolta Camera Co Ltd Driving device for photographing lens of automatic focusing camera
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
US5113025A (en) 1989-10-02 1992-05-12 Ethyl Corporation Selective reducing agents
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
DE69120446T2 (de) * 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
US5130459A (en) * 1990-06-08 1992-07-14 Nec Corporation Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same
US5136046A (en) 1990-09-28 1992-08-04 Ethyl Corporation Preparation of amine alanes
US5191099A (en) * 1991-09-05 1993-03-02 Regents Of The University Of Minnesota Chemical vapor deposition of aluminum films using dimethylethylamine alane
JPH0912581A (ja) * 1995-04-28 1997-01-14 Sumitomo Chem Co Ltd ジメチルアルミニウムハイドライド組成物及びその製造方法ならびにジメチルアルミニウムハイドライドの粘度調製方法
US5900279A (en) 1995-11-20 1999-05-04 Tri Chemical Laboratory Inc. Processes for the chemical vapor deposition and solvent used for the processes
JP2913583B2 (ja) * 1996-09-24 1999-06-28 株式会社トリケミカル研究所 Ａｌ膜形成材料及びＡｌ膜形成方法

Also Published As

Publication number Publication date
JP2000086673A (ja) 2000-03-28
TW486482B (en) 2002-05-11
KR100289945B1 (ko) 2001-09-17
SG79280A1 (en) 2001-03-20
KR20000020137A (ko) 2000-04-15
EP0987270A3 (de) 2001-06-06
US6380383B1 (en) 2002-04-30
EP0987270B1 (de) 2002-11-27
EP0987270A2 (de) 2000-03-22
DE69904129D1 (de) 2003-01-09
US6121443A (en) 2000-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UP CHEMICAL CO.LTD., GYEONGGI, KR

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,

8339 Ceased/non-payment of the annual fee