DE10196055T1 - Verfahren zur Gasphasenabscheidung von Titan-Silicium-Stickstoff-Filmen - Google Patents

Verfahren zur Gasphasenabscheidung von Titan-Silicium-Stickstoff-Filmen

Info

Publication number
DE10196055T1
DE10196055T1 DE10196055T DE10196055T DE10196055T1 DE 10196055 T1 DE10196055 T1 DE 10196055T1 DE 10196055 T DE10196055 T DE 10196055T DE 10196055 T DE10196055 T DE 10196055T DE 10196055 T1 DE10196055 T1 DE 10196055T1
Authority
DE
Germany
Prior art keywords
titanium
silicon
vapor deposition
nitrogen films
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10196055T
Other languages
English (en)
Inventor
Barry C Arkles
Alain Kaloyeros
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEW YORK ALBANY, State University of, Research Foundation of
Research Foundation of State University of New York
Gelest Inc
Original Assignee
NEW YORK ALBANY, State University of, Research Foundation of
Research Foundation of State University of New York
Gelest Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEW YORK ALBANY, State University of, Research Foundation of, Research Foundation of State University of New York, Gelest Inc filed Critical NEW YORK ALBANY, State University of, Research Foundation of
Publication of DE10196055T1 publication Critical patent/DE10196055T1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE10196055T 2000-04-13 2001-04-13 Verfahren zur Gasphasenabscheidung von Titan-Silicium-Stickstoff-Filmen Ceased DE10196055T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19679800P 2000-04-13 2000-04-13
PCT/US2001/012125 WO2001079584A1 (en) 2000-04-13 2001-04-13 Methods for chemical vapor deposition of titanium-silicon-nitrogen films

Publications (1)

Publication Number Publication Date
DE10196055T1 true DE10196055T1 (de) 2003-04-03

Family

ID=22726832

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196055T Ceased DE10196055T1 (de) 2000-04-13 2001-04-13 Verfahren zur Gasphasenabscheidung von Titan-Silicium-Stickstoff-Filmen

Country Status (4)

Country Link
JP (1) JP2003531291A (de)
AU (1) AU2001255358A1 (de)
DE (1) DE10196055T1 (de)
WO (1) WO2001079584A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003038892A2 (en) * 2001-10-26 2003-05-08 Applied Materials, Inc. Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization
WO2006070956A1 (en) * 2004-12-30 2006-07-06 Lg Electronics Inc. Ultra hydrophilic ti-o-c based nano film and fabrication method thereof
WO2012096293A1 (ja) * 2011-01-14 2012-07-19 東京エレクトロン株式会社 ＴｉＳｉＮ膜の成膜方法および記憶媒体
WO2013105389A1 (ja) * 2012-01-13 2013-07-18 東京エレクトロン株式会社 ＴｉＳｉＮ膜の成膜方法および記憶媒体
KR101189642B1 (ko) * 2012-04-09 2012-10-12 아익스트론 에스이 원자층 증착법을 이용한 ＴｉＳｉＮ 박막의 형성방법
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
TW202334482A (zh) * 2021-12-03 2023-09-01 美商應用材料股份有限公司 用以形成金屬氮化矽膜的nh自由基熱氮化

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US5595784A (en) * 1995-08-01 1997-01-21 Kaim; Robert Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition

Also Published As

Publication number Publication date
AU2001255358A1 (en) 2001-10-30
WO2001079584A1 (en) 2001-10-25
JP2003531291A (ja) 2003-10-21

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