SG83121A1 - Aluminium complex derivatives for chemical vacuum evaporation and the method of producing the same - Google Patents

Aluminium complex derivatives for chemical vacuum evaporation and the method of producing the same

Info

Publication number
SG83121A1
SG83121A1 SG9901666A SG1999001666A SG83121A1 SG 83121 A1 SG83121 A1 SG 83121A1 SG 9901666 A SG9901666 A SG 9901666A SG 1999001666 A SG1999001666 A SG 1999001666A SG 83121 A1 SG83121 A1 SG 83121A1
Authority
SG
Singapore
Prior art keywords
producing
same
vacuum evaporation
aluminium complex
complex derivatives
Prior art date
Application number
SG9901666A
Inventor
Hyun-Koock Shin
Hyun-Joo Shin
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of SG83121A1 publication Critical patent/SG83121A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/069—Aluminium compounds without C-aluminium linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG9901666A 1998-04-23 1999-04-13 Aluminium complex derivatives for chemical vacuum evaporation and the method of producing the same SG83121A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980014522A KR100279067B1 (en) 1998-04-23 1998-04-23 Aluminum complex derivative for chemical vapor deposition and production of the same derivative

Publications (1)

Publication Number Publication Date
SG83121A1 true SG83121A1 (en) 2001-09-18

Family

ID=36915015

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9901666A SG83121A1 (en) 1998-04-23 1999-04-13 Aluminium complex derivatives for chemical vacuum evaporation and the method of producing the same

Country Status (7)

Country Link
US (2) US6143357A (en)
EP (1) EP0952156B1 (en)
JP (1) JP4198820B2 (en)
KR (1) KR100279067B1 (en)
DE (1) DE69932560T2 (en)
SG (1) SG83121A1 (en)
TW (1) TW562800B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776766B2 (en) 2005-01-19 2010-08-17 Jsr Corporation Trench filling method

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100316760B1 (en) * 1999-06-11 2001-12-12 신현국 The compounds for the alumina films from chemical vapor deposition and the method of synthesis
US7223823B2 (en) * 2002-06-06 2007-05-29 Exxon Mobil Chemical Patents Inc. Catalyst system and process
US7199072B2 (en) * 2002-12-31 2007-04-03 Univation Technologies, Llc Process of producing a supported mixed catalyst system and polyolefins therefrom
US7098339B2 (en) * 2005-01-18 2006-08-29 Praxair Technology, Inc. Processes for the production of organometallic compounds
US7348445B2 (en) * 2005-02-14 2008-03-25 Praxair Technology, Inc. Organoaluminum precursor compounds
KR100724084B1 (en) * 2005-11-16 2007-06-04 주식회사 유피케미칼 Thin film deposition from atomic layer deposition or chemical vapor deposition and their uses
KR100829472B1 (en) * 2006-05-18 2008-05-16 (주)디엔에프 Aluminum compound for forming aluminum films by chemical vapor deposition and their synthesis
KR100756403B1 (en) 2006-05-18 2007-09-10 (주)디엔에프 Synthesis of aluminum compound for forming aluminum films by chemical vapor deposition
US8142847B2 (en) * 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
JP4962311B2 (en) * 2007-12-27 2012-06-27 セイコーエプソン株式会社 Electronic circuit device and electronic device
JP2010241698A (en) * 2009-04-01 2010-10-28 Air Water Inc Method for purifying amine alane
US20110206844A1 (en) * 2010-02-24 2011-08-25 Jacob Grant Wiles Chromium-free passivation of vapor deposited aluminum surfaces
JP5971248B2 (en) * 2011-07-21 2016-08-17 Jsr株式会社 Method for manufacturing a substrate including a metal body
US9255324B2 (en) * 2012-08-15 2016-02-09 Up Chemical Co., Ltd. Aluminum precursor composition
US9994954B2 (en) * 2013-07-26 2018-06-12 Versum Materials Us, Llc Volatile dihydropyrazinly and dihydropyrazine metal complexes
CN111855723B (en) * 2020-06-11 2023-11-14 宁夏大学 Direct three-dimensional display method for coarse aluminum cellular crystal structure morphology

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113025A (en) * 1989-10-02 1992-05-12 Ethyl Corporation Selective reducing agents
US5136046A (en) * 1990-09-28 1992-08-04 Ethyl Corporation Preparation of amine alanes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB905985A (en) 1959-02-24 1962-09-19 Ethyl Corp Preparing metal-alumino hydrides
JPS57188026A (en) 1981-05-14 1982-11-18 Minolta Camera Co Ltd Driving device for photographing lens of automatic focusing camera
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
JP2721023B2 (en) * 1989-09-26 1998-03-04 キヤノン株式会社 Deposition film formation method
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
DE69120446T2 (en) * 1990-02-19 1996-11-14 Canon Kk Process for producing deposited metal layer containing aluminum as the main component using alkyl aluminum hydride
US5191099A (en) * 1991-09-05 1993-03-02 Regents Of The University Of Minnesota Chemical vapor deposition of aluminum films using dimethylethylamine alane
US5900279A (en) 1995-11-20 1999-05-04 Tri Chemical Laboratory Inc. Processes for the chemical vapor deposition and solvent used for the processes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113025A (en) * 1989-10-02 1992-05-12 Ethyl Corporation Selective reducing agents
US5136046A (en) * 1990-09-28 1992-08-04 Ethyl Corporation Preparation of amine alanes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776766B2 (en) 2005-01-19 2010-08-17 Jsr Corporation Trench filling method

Also Published As

Publication number Publication date
DE69932560D1 (en) 2006-09-14
JP2000026474A (en) 2000-01-25
EP0952156A2 (en) 1999-10-27
KR100279067B1 (en) 2001-01-15
US6399772B1 (en) 2002-06-04
EP0952156B1 (en) 2006-08-02
DE69932560T2 (en) 2007-10-18
TW562800B (en) 2003-11-21
JP4198820B2 (en) 2008-12-17
US6143357A (en) 2000-11-07
KR19990080919A (en) 1999-11-15
EP0952156A3 (en) 2000-12-20

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