TW562800B - Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same - Google Patents

Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same Download PDF

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Publication number
TW562800B
TW562800B TW088105809A TW88105809A TW562800B TW 562800 B TW562800 B TW 562800B TW 088105809 A TW088105809 A TW 088105809A TW 88105809 A TW88105809 A TW 88105809A TW 562800 B TW562800 B TW 562800B
Authority
TW
Taiwan
Prior art keywords
aluminum
formula
patent application
vapor deposition
compound
Prior art date
Application number
TW088105809A
Other languages
English (en)
Chinese (zh)
Inventor
Hyun-Koock Shin
Hyun-Joo Shin
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Application granted granted Critical
Publication of TW562800B publication Critical patent/TW562800B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/069—Aluminium compounds without C-aluminium linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW088105809A 1998-04-23 1999-04-13 Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same TW562800B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980014522A KR100279067B1 (ko) 1998-04-23 1998-04-23 화학증착용알루미늄화합물및그제조방법

Publications (1)

Publication Number Publication Date
TW562800B true TW562800B (en) 2003-11-21

Family

ID=36915015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088105809A TW562800B (en) 1998-04-23 1999-04-13 Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same

Country Status (7)

Country Link
US (2) US6143357A (enExample)
EP (1) EP0952156B1 (enExample)
JP (1) JP4198820B2 (enExample)
KR (1) KR100279067B1 (enExample)
DE (1) DE69932560T2 (enExample)
SG (1) SG83121A1 (enExample)
TW (1) TW562800B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776766B2 (en) 2005-01-19 2010-08-17 Jsr Corporation Trench filling method
TWI552997B (zh) * 2013-07-26 2016-10-11 氣體產品及化學品股份公司 揮發性二氫吡嗪基及二氫吡嗪金屬錯合物

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100316760B1 (ko) * 1999-06-11 2001-12-12 신현국 알루미나 박막의 화학 증착용 전구체 화합물 및 이의 제조방법
US7223823B2 (en) * 2002-06-06 2007-05-29 Exxon Mobil Chemical Patents Inc. Catalyst system and process
US7199072B2 (en) * 2002-12-31 2007-04-03 Univation Technologies, Llc Process of producing a supported mixed catalyst system and polyolefins therefrom
US7098339B2 (en) * 2005-01-18 2006-08-29 Praxair Technology, Inc. Processes for the production of organometallic compounds
US7348445B2 (en) 2005-02-14 2008-03-25 Praxair Technology, Inc. Organoaluminum precursor compounds
KR100724084B1 (ko) * 2005-11-16 2007-06-04 주식회사 유피케미칼 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법
KR100756403B1 (ko) * 2006-05-18 2007-09-10 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물의 제조방법
KR100829472B1 (ko) * 2006-05-18 2008-05-16 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물 및 이의제조방법
US8142847B2 (en) * 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
JP4962311B2 (ja) * 2007-12-27 2012-06-27 セイコーエプソン株式会社 電子回路装置および電子機器
JP2010241698A (ja) * 2009-04-01 2010-10-28 Air Water Inc アミンアランの精製方法
US20110206844A1 (en) 2010-02-24 2011-08-25 Jacob Grant Wiles Chromium-free passivation of vapor deposited aluminum surfaces
JP5971248B2 (ja) * 2011-07-21 2016-08-17 Jsr株式会社 金属体を備える基体の製造方法
US9255324B2 (en) * 2012-08-15 2016-02-09 Up Chemical Co., Ltd. Aluminum precursor composition
CN111855723B (zh) * 2020-06-11 2023-11-14 宁夏大学 一种粗大铝胞状晶组织形貌的直接三维显示方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB905985A (en) 1959-02-24 1962-09-19 Ethyl Corp Preparing metal-alumino hydrides
JPS57188026A (en) 1981-05-14 1982-11-18 Minolta Camera Co Ltd Driving device for photographing lens of automatic focusing camera
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
US5113025A (en) * 1989-10-02 1992-05-12 Ethyl Corporation Selective reducing agents
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
EP0448223B1 (en) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride
US5136046A (en) * 1990-09-28 1992-08-04 Ethyl Corporation Preparation of amine alanes
US5191099A (en) * 1991-09-05 1993-03-02 Regents Of The University Of Minnesota Chemical vapor deposition of aluminum films using dimethylethylamine alane
US5900279A (en) 1995-11-20 1999-05-04 Tri Chemical Laboratory Inc. Processes for the chemical vapor deposition and solvent used for the processes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776766B2 (en) 2005-01-19 2010-08-17 Jsr Corporation Trench filling method
TWI552997B (zh) * 2013-07-26 2016-10-11 氣體產品及化學品股份公司 揮發性二氫吡嗪基及二氫吡嗪金屬錯合物
US9994954B2 (en) 2013-07-26 2018-06-12 Versum Materials Us, Llc Volatile dihydropyrazinly and dihydropyrazine metal complexes

Also Published As

Publication number Publication date
EP0952156A3 (en) 2000-12-20
JP4198820B2 (ja) 2008-12-17
DE69932560T2 (de) 2007-10-18
US6143357A (en) 2000-11-07
DE69932560D1 (de) 2006-09-14
EP0952156B1 (en) 2006-08-02
KR100279067B1 (ko) 2001-01-15
KR19990080919A (ko) 1999-11-15
US6399772B1 (en) 2002-06-04
JP2000026474A (ja) 2000-01-25
SG83121A1 (en) 2001-09-18
EP0952156A2 (en) 1999-10-27

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees