DE69836170D1 - Herstellungsverfahren eines statischen Speichers mit wahlfreiem Zugriff und Struktur - Google Patents

Herstellungsverfahren eines statischen Speichers mit wahlfreiem Zugriff und Struktur

Info

Publication number
DE69836170D1
DE69836170D1 DE69836170T DE69836170T DE69836170D1 DE 69836170 D1 DE69836170 D1 DE 69836170D1 DE 69836170 T DE69836170 T DE 69836170T DE 69836170 T DE69836170 T DE 69836170T DE 69836170 D1 DE69836170 D1 DE 69836170D1
Authority
DE
Germany
Prior art keywords
manufacturing
random access
access memory
static random
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69836170T
Other languages
English (en)
Inventor
Tsui Chiu Chan
Frank Randolph Bryant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69836170D1 publication Critical patent/DE69836170D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
DE69836170T 1997-06-24 1998-06-19 Herstellungsverfahren eines statischen Speichers mit wahlfreiem Zugriff und Struktur Expired - Lifetime DE69836170D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/881,342 US6140684A (en) 1997-06-24 1997-06-24 SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers

Publications (1)

Publication Number Publication Date
DE69836170D1 true DE69836170D1 (de) 2006-11-30

Family

ID=25378276

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69836170T Expired - Lifetime DE69836170D1 (de) 1997-06-24 1998-06-19 Herstellungsverfahren eines statischen Speichers mit wahlfreiem Zugriff und Struktur

Country Status (4)

Country Link
US (2) US6140684A (de)
EP (1) EP0887857B1 (de)
JP (1) JPH1174378A (de)
DE (1) DE69836170D1 (de)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232670B1 (en) * 1998-07-27 2001-05-15 Seiko Epson Corporation Semiconductor memory device and method of fabricating the same
US6306694B1 (en) 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US6433397B1 (en) * 2000-01-21 2002-08-13 International Business Machines Corporation N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same
TW522546B (en) * 2000-12-06 2003-03-01 Mitsubishi Electric Corp Semiconductor memory
JP2002176112A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US6812529B2 (en) 2001-03-15 2004-11-02 Micron Technology, Inc. Suppression of cross diffusion and gate depletion
KR20020078086A (ko) * 2001-04-04 2002-10-18 삼성전자 주식회사 반도체 메모리 소자 및 이를 한정하기 위한 마스크 패턴
TW480735B (en) * 2001-04-24 2002-03-21 United Microelectronics Corp Structure and manufacturing method of polysilicon thin film transistor
KR100365415B1 (en) * 2001-04-30 2002-12-18 Hynix Semiconductor Inc Method for manufacturing static ram cell
KR100454073B1 (ko) * 2001-12-24 2004-10-26 동부전자 주식회사 에스램 셀의 제조방법
US6593630B1 (en) * 2002-01-31 2003-07-15 Texas Instruments Incorporated Memory cell with reduced coupling between pass transistor and drive transistor bodies and method
US6856030B2 (en) * 2002-07-08 2005-02-15 Viciciv Technology Semiconductor latches and SRAM devices
US6855988B2 (en) * 2002-07-08 2005-02-15 Viciciv Technology Semiconductor switching devices
US6828689B2 (en) * 2002-07-08 2004-12-07 Vi Ci Civ Semiconductor latches and SRAM devices
US20040004251A1 (en) * 2002-07-08 2004-01-08 Madurawe Raminda U. Insulated-gate field-effect thin film transistors
US6998722B2 (en) * 2002-07-08 2006-02-14 Viciciv Technology Semiconductor latches and SRAM devices
US6649456B1 (en) * 2002-10-16 2003-11-18 Taiwan Semiconductor Manufacturing Company SRAM cell design for soft error rate immunity
US7138685B2 (en) * 2002-12-11 2006-11-21 International Business Machines Corporation Vertical MOSFET SRAM cell
US8253195B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212315B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253197B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212317B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
US7186606B2 (en) * 2004-08-23 2007-03-06 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7195981B2 (en) * 2004-08-23 2007-03-27 Enpirion, Inc. Method of forming an integrated circuit employable with a power converter
US7190026B2 (en) * 2004-08-23 2007-03-13 Enpirion, Inc. Integrated circuit employable with a power converter
US7335948B2 (en) * 2004-08-23 2008-02-26 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7232733B2 (en) * 2004-08-23 2007-06-19 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7229886B2 (en) * 2004-08-23 2007-06-12 Enpirion, Inc. Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
US7465973B2 (en) * 2004-12-03 2008-12-16 International Business Machines Corporation Integrated circuit having gates and active regions forming a regular grating
CN101288180A (zh) * 2005-06-30 2008-10-15 飞思卡尔半导体公司 半导体结构的形成方法
US7452768B2 (en) * 2005-10-25 2008-11-18 Freescale Semiconductor, Inc. Multiple device types including an inverted-T channel transistor and method therefor
US7535751B2 (en) * 2007-02-12 2009-05-19 Taiwan Semioconductor Manufacturing Co., Ltd. Dual-port SRAM device
KR100871546B1 (ko) 2007-08-08 2008-12-01 주식회사 동부하이텍 플래시 메모리 소자 및 그 제조 방법
US7732872B2 (en) * 2007-10-25 2010-06-08 International Business Machines Corporation Integration scheme for multiple metal gate work function structures
US7786535B2 (en) * 2008-01-11 2010-08-31 International Business Machines Corporation Design structures for high-voltage integrated circuits
US7790524B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
US7772651B2 (en) * 2008-01-11 2010-08-10 International Business Machines Corporation Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits
US7790543B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
US7678658B2 (en) * 2008-01-23 2010-03-16 International Business Machines Corporation Structure and method for improved SRAM interconnect
US7700428B2 (en) * 2008-05-09 2010-04-20 International Business Machines Corporation Methods of fabricating a device structure for use as a memory cell in a non-volatile random access memory
US7804124B2 (en) * 2008-05-09 2010-09-28 International Business Machines Corporation Device structures for a memory cell of a non-volatile random access memory and design structures for a non-volatile random access memory
US8987831B2 (en) 2012-01-12 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells and arrays
US8587068B2 (en) * 2012-01-26 2013-11-19 International Business Machines Corporation SRAM with hybrid FinFET and planar transistors
US8823178B2 (en) * 2012-09-14 2014-09-02 Globalfoundries Inc. Bit cell with double patterned metal layer structures
TWI655718B (zh) 2012-11-30 2019-04-01 美商英力股份有限公司 包含耦合至一去耦裝置之半導體裝置之設備及其形成方法
US9515148B2 (en) 2013-11-11 2016-12-06 International Business Machines Corporation Bridging local semiconductor interconnects
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9893191B2 (en) * 2014-08-20 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET transistor with u-shaped channel
US9251888B1 (en) 2014-09-15 2016-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells with vertical gate-all-round MOSFETs
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
US9496399B2 (en) * 2015-04-02 2016-11-15 International Business Machines Corporation FinFET devices with multiple channel lengths
US9391080B1 (en) 2015-04-28 2016-07-12 Globalfoundries Inc. Memory bit cell for reduced layout area
US9659941B2 (en) 2015-06-30 2017-05-23 Globalfoundries Inc. Integrated circuit structure with methods of electrically connecting same
TWI566335B (zh) * 2015-10-28 2017-01-11 力晶科技股份有限公司 靜態隨機存取記憶體
US9484349B1 (en) * 2015-10-28 2016-11-01 Powerchip Technology Corporation Static random access memory
KR101855846B1 (ko) * 2015-12-29 2018-05-09 포항공과대학교 산학협력단 수직적층구조의 3차원 정적램 코어 셀 및 그를 포함하는 정적램 코어 셀 어셈블리
CN106992143B (zh) * 2016-01-21 2019-12-17 中芯国际集成电路制造(上海)有限公司 一种半导体器件以及制备方法、电子装置
EP3642874A4 (de) * 2017-06-20 2021-05-26 INTEL Corporation Interner knoten-jumper für speicherbitzellen
US11895818B2 (en) 2022-04-26 2024-02-06 International Business Machines Corporation Stacked FET SRAM

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1040321A (en) * 1974-07-23 1978-10-10 Alfred C. Ipri Polycrystalline silicon resistive device for integrated circuits and method for making same
DE2503864C3 (de) * 1975-01-30 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US4118642A (en) * 1975-06-26 1978-10-03 Motorola, Inc. Higher density insulated gate field effect circuit
US4214917A (en) * 1978-02-10 1980-07-29 Emm Semi Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements
US4178674A (en) * 1978-03-27 1979-12-18 Intel Corporation Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
US4290185A (en) * 1978-11-03 1981-09-22 Mostek Corporation Method of making an extremely low current load device for integrated circuit
US4247915A (en) * 1979-01-02 1981-01-27 Texas Instruments Incorporated Punch-through load devices in high density static memory cell
US4370798A (en) * 1979-06-15 1983-02-01 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
JPS5626467A (en) * 1979-08-10 1981-03-14 Toshiba Corp Semiconductor device and the manufacturing process
JPS5661158A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Cmos random access memory
JPS5683075A (en) * 1979-12-10 1981-07-07 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type field-effect transistor circuit device
US4367580A (en) * 1980-03-21 1983-01-11 Texas Instruments Incorporated Process for making polysilicon resistors
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
US4467518A (en) * 1981-05-19 1984-08-28 Ibm Corporation Process for fabrication of stacked, complementary MOS field effect transistor circuits
JPS57192069A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Insulated gate field effect semiconductor device
JPS59220952A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置の製造方法
US5389809A (en) * 1982-02-01 1995-02-14 Texas Instruments Incorporated Silicided MOS transistor
JPS58135653A (ja) * 1982-02-08 1983-08-12 Toshiba Corp 半導体装置の製造方法
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
US4593453A (en) * 1982-06-01 1986-06-10 Rockwell International Corporation Two-level transistor structures and method utilizing minimal area therefor
DE3235880A1 (de) * 1982-09-28 1984-04-05 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle in zwei-kanal-technik
US4476475A (en) * 1982-11-19 1984-10-09 Northern Telecom Limited Stacked MOS transistor
JPS59167051A (ja) * 1983-03-14 1984-09-20 Nec Corp 記憶回路装置
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
US4502202A (en) * 1983-06-17 1985-03-05 Texas Instruments Incorporated Method for fabricating overlaid device in stacked CMOS
US4554572A (en) * 1983-06-17 1985-11-19 Texas Instruments Incorporated Self-aligned stacked CMOS
US4505026A (en) * 1983-07-14 1985-03-19 Intel Corporation CMOS Process for fabricating integrated circuits, particularly dynamic memory cells
US4545112A (en) * 1983-08-15 1985-10-08 Alphasil Incorporated Method of manufacturing thin film transistors and transistors made thereby
JPS60130160A (ja) * 1983-12-19 1985-07-11 Hitachi Ltd 半導体記憶装置
US5162892A (en) * 1983-12-24 1992-11-10 Sony Corporation Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer
US4814850A (en) * 1984-04-27 1989-03-21 Texas Instruments Incorporated Density intensive non-self-aligned stacked CMOS
US4581623A (en) * 1984-05-24 1986-04-08 Motorola, Inc. Interlayer contact for use in a static RAM cell
US4560419A (en) * 1984-05-30 1985-12-24 Inmos Corporation Method of making polysilicon resistors with a low thermal activation energy
US4561907A (en) * 1984-07-12 1985-12-31 Bruha Raicu Process for forming low sheet resistance polysilicon having anisotropic etch characteristics
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
US4628589A (en) * 1984-09-28 1986-12-16 Texas Instruments Incorporated Method for fabricating stacked CMOS structures
US4603468A (en) * 1984-09-28 1986-08-05 Texas Instruments Incorporated Method for source/drain self-alignment in stacked CMOS
JPH0685431B2 (ja) * 1985-06-10 1994-10-26 株式会社日立製作所 半導体装置
JPS61292951A (ja) * 1985-06-21 1986-12-23 Hitachi Ltd 半導体集積回路装置の製法
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
DE3682021D1 (de) * 1985-10-23 1991-11-21 Hitachi Ltd Polysilizium-mos-transistor und verfahren zu seiner herstellung.
US4841481A (en) * 1985-10-25 1989-06-20 Hitachi, Ltd. Semiconductor memory device
GB2184287B (en) * 1985-12-13 1989-10-18 Intel Corp Integrated circuit dual port static memory cell
IT1209682B (it) * 1985-12-23 1989-08-30 Sgs Microelettronica Spa Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima.
US4654121A (en) * 1986-02-27 1987-03-31 Ncr Corporation Fabrication process for aligned and stacked CMOS devices
US4797804A (en) * 1987-03-09 1989-01-10 International Business Machines Corporation High density, high performance, single event upset immune data storage cell
JPH0824144B2 (ja) * 1987-06-10 1996-03-06 三菱電機株式会社 半導体装置の製造方法
FR2617635B1 (fr) * 1987-07-03 1990-03-09 Thomson Semiconducteurs Procede de contact entre deux couches conductrices ou semi-conductrices deposees sur un substrat
US5248630A (en) * 1987-07-27 1993-09-28 Nippon Telegraph And Telephone Corporation Thin film silicon semiconductor device and process for producing thereof
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Ｍｏｓ型半導体記憶回路装置
JPH01231376A (ja) * 1988-03-11 1989-09-14 Nec Corp 薄膜トランジスタおよびその製造方法
JPH01255269A (ja) * 1988-04-05 1989-10-12 Oki Electric Ind Co Ltd 半導体記憶装置
JPH0770623B2 (ja) * 1988-07-08 1995-07-31 三菱電機株式会社 スタティックランダムアクセスメモリ装置
US4950620A (en) * 1988-09-30 1990-08-21 Dallas Semiconductor Corp. Process for making integrated circuit with doped silicon dioxide load elements
US4921813A (en) * 1988-10-17 1990-05-01 Motorola, Inc. Method for making a polysilicon transistor
US4918510A (en) * 1988-10-31 1990-04-17 Motorola, Inc. Compact CMOS device structure
US5349206A (en) * 1988-11-10 1994-09-20 Seiko Epson Corporation Integrated memory circuit with high density load elements
US5196233A (en) * 1989-01-18 1993-03-23 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor circuits
US5135888A (en) * 1989-01-18 1992-08-04 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
US5801396A (en) * 1989-01-18 1998-09-01 Stmicroelectronics, Inc. Inverted field-effect device with polycrystalline silicon/germanium channel
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
US4966864A (en) * 1989-03-27 1990-10-30 Motorola, Inc. Contact structure and method
JP3011416B2 (ja) * 1989-04-14 2000-02-21 株式会社東芝 スタティック型メモリ
US5192704A (en) * 1989-06-30 1993-03-09 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
US5083190A (en) * 1989-09-05 1992-01-21 Motorola, Inc. Shared gate CMOS transistor
JPH0831534B2 (ja) * 1989-11-24 1996-03-27 シャープ株式会社 半導体記憶装置及びその製造方法
EP0456059B1 (de) * 1990-04-27 1996-08-28 Nec Corporation Dünnfilmtransistor mit Schottky-Sperrschicht
US5151376A (en) * 1990-05-31 1992-09-29 Sgs-Thomson Microelectronics, Inc. Method of making polycrystalline silicon resistors for integrated circuits
JPH04322469A (ja) * 1991-04-23 1992-11-12 Mitsubishi Electric Corp 薄膜電界効果素子およびその製造方法
US5298782A (en) * 1991-06-03 1994-03-29 Sgs-Thomson Microelectronics, Inc. Stacked CMOS SRAM cell with polysilicon transistor load
US5187114A (en) * 1991-06-03 1993-02-16 Sgs-Thomson Microelectronics, Inc. Method of making SRAM cell and structure with polycrystalline P-channel load devices
JP2602132B2 (ja) * 1991-08-09 1997-04-23 三菱電機株式会社 薄膜電界効果素子およびその製造方法
US5173754A (en) * 1992-02-03 1992-12-22 Micron Technology, Inc. Integrated circuit device with gate in sidewall
US5591653A (en) * 1992-03-30 1997-01-07 Sony Corporation Method of manufacturing Si-Ge thin film transistor
US5373170A (en) * 1993-03-15 1994-12-13 Motorola Inc. Semiconductor memory device having a compact symmetrical layout
JP3033385B2 (ja) * 1993-04-01 2000-04-17 日本電気株式会社 半導体メモリセル
US5451534A (en) * 1994-12-14 1995-09-19 United Microelectronics Corporation Method of making single layer thin film transistor static random access memory cell
KR0170311B1 (ko) * 1995-06-23 1999-02-01 김광호 스태틱 랜덤 억세스 메모리 및 그 제조방법
US5640023A (en) * 1995-08-31 1997-06-17 Sgs-Thomson Microelectronics, Inc. Spacer-type thin-film polysilicon transistor for low-power memory devices

Also Published As

Publication number Publication date
EP0887857A1 (de) 1998-12-30
US6271063B1 (en) 2001-08-07
JPH1174378A (ja) 1999-03-16
EP0887857B1 (de) 2006-10-18
US6140684A (en) 2000-10-31

Similar Documents

Publication Publication Date Title
DE69836170D1 (de) Herstellungsverfahren eines statischen Speichers mit wahlfreiem Zugriff und Struktur
DE60032281D1 (de) Magnetischer dynamischer Direktzugriffspeicher und dessen Herstellungsverfahren
DE69510337D1 (de) Halbleiterspeicheranordnungen und herstellungsverfahren
DE69328110D1 (de) Isolator struktur und herstellungsverfahren
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE3854421D1 (de) Dynamische Speicheranordnung mit wahlfreiem Zugriff und Herstellungsverfahren dafür.
DE69936524D1 (de) Betriebsweise und schaltkreis eines speichers mit seriellem zugriff
DE69631919D1 (de) Halbleiter-Speicherbauelement und Verfahren zum Herstellen desselben
DE69834561D1 (de) Halbleiteranordnung und herstellungsverfahren dafür
DE69730377D1 (de) Permanente Halbleiterspeicherzelle und deren Herstellungsverfahren
DE69612676D1 (de) Ferroelektrischer Direktzugriffspeicher
DE69827692D1 (de) Halbleiterspeicherzelle und Herstellungsverfahren dazu
DE69840486D1 (de) Halbleiterspeicher und Zugriffsverfahren hierauf
DE69834011D1 (de) Statische Direktzugriffspeicherschaltungen
DE69429906D1 (de) Halbleiterstruktur und Herstellungsverfahren
KR960012496A (ko) 반도체기억장치 및 그 제조방법
GB2342774B (en) Method of manufacturing embedded dynamic random access memory
DE59900872D1 (de) Speicherzellenanordnung und entsprechendes Herstellungsverfahren
DE69522846D1 (de) Verbesserte Speicheranordnung und Herstellungsverfahren
DE69418357D1 (de) SRAM-Speicherstruktur und ein zugehöriges Herstellungsverfahren
DE69911102D1 (de) Verbesserte dynamische Direktzugriffspeicherschaltung und Herstellungsverfahren
KR960008551A (ko) 듀얼 뱅크 메모리를 리프레시하는 회로 및 방법
GB2311153B (en) Random access memories and method of operation
DE59803426D1 (de) Speicherzellenanordnung und entsprechendes Herstellungsverfahren
DE69720873D1 (de) Speicherzugriffsverfahren und datenprozessor

Legal Events

Date Code Title Description
8332 No legal effect for de