GB2184287B - Integrated circuit dual port static memory cell - Google Patents

Integrated circuit dual port static memory cell

Info

Publication number
GB2184287B
GB2184287B GB8603505A GB8603505A GB2184287B GB 2184287 B GB2184287 B GB 2184287B GB 8603505 A GB8603505 A GB 8603505A GB 8603505 A GB8603505 A GB 8603505A GB 2184287 B GB2184287 B GB 2184287B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
memory cell
static memory
dual port
port static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8603505A
Other versions
GB2184287A (en
GB8603505D0 (en
Inventor
Owen Sharp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB8603505D0 publication Critical patent/GB8603505D0/en
Publication of GB2184287A publication Critical patent/GB2184287A/en
Application granted granted Critical
Publication of GB2184287B publication Critical patent/GB2184287B/en
Priority to SG34490A priority Critical patent/SG34490G/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
GB8603505A 1985-12-13 1986-02-13 Integrated circuit dual port static memory cell Expired GB2184287B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG34490A SG34490G (en) 1985-12-13 1990-05-15 Integrated circuit dual port static memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80846485A 1985-12-13 1985-12-13

Publications (3)

Publication Number Publication Date
GB8603505D0 GB8603505D0 (en) 1986-03-19
GB2184287A GB2184287A (en) 1987-06-17
GB2184287B true GB2184287B (en) 1989-10-18

Family

ID=25198836

Family Applications (2)

Application Number Title Priority Date Filing Date
GB8603505A Expired GB2184287B (en) 1985-12-13 1986-02-13 Integrated circuit dual port static memory cell
GB8716605A Expired GB2191893B (en) 1985-12-13 1987-07-15 Integrated circuit dual port static memory cell

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB8716605A Expired GB2191893B (en) 1985-12-13 1987-07-15 Integrated circuit dual port static memory cell

Country Status (4)

Country Link
JP (1) JPS62139197A (en)
DE (1) DE3641461A1 (en)
GB (2) GB2184287B (en)
HK (1) HK57490A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2184287B (en) * 1985-12-13 1989-10-18 Intel Corp Integrated circuit dual port static memory cell
DE3729585A1 (en) * 1987-09-04 1989-03-16 Ant Nachrichtentech DIGITAL TRANSMISSION SYSTEM WITH INTERMEDIATING TRANSMULTIPLEXER
NL8800846A (en) * 1988-04-05 1989-11-01 Philips Nv INTEGRATED CIRCUIT WITH A PROGRAMMABLE CELL.
US5801396A (en) * 1989-01-18 1998-09-01 Stmicroelectronics, Inc. Inverted field-effect device with polycrystalline silicon/germanium channel
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
US5135888A (en) * 1989-01-18 1992-08-04 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
EP0578915A3 (en) * 1992-07-16 1994-05-18 Hewlett Packard Co Two-port ram cell
JP2665644B2 (en) * 1992-08-11 1997-10-22 三菱電機株式会社 Semiconductor storage device
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2184287B (en) * 1985-12-13 1989-10-18 Intel Corp Integrated circuit dual port static memory cell

Also Published As

Publication number Publication date
GB2184287A (en) 1987-06-17
DE3641461A1 (en) 1987-06-19
GB2191893A (en) 1987-12-23
JPS62139197A (en) 1987-06-22
HK57490A (en) 1990-08-10
GB2191893B (en) 1989-10-25
GB8603505D0 (en) 1986-03-19
GB8716605D0 (en) 1987-08-19

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930213