IT1209682B - Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima. - Google Patents

Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima.

Info

Publication number
IT1209682B
IT1209682B IT8523356A IT2335685A IT1209682B IT 1209682 B IT1209682 B IT 1209682B IT 8523356 A IT8523356 A IT 8523356A IT 2335685 A IT2335685 A IT 2335685A IT 1209682 B IT1209682 B IT 1209682B
Authority
IT
Italy
Prior art keywords
joints
manufacture
field effect
effect transistors
gate field
Prior art date
Application number
IT8523356A
Other languages
English (en)
Other versions
IT8523356A0 (it
Inventor
Laura Meda
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8523356A priority Critical patent/IT1209682B/it
Publication of IT8523356A0 publication Critical patent/IT8523356A0/it
Priority to EP86117863A priority patent/EP0227085B1/en
Priority to US06/946,187 priority patent/US4789644A/en
Priority to DE86117863T priority patent/DE3688929T2/de
Priority to JP61305578A priority patent/JPH0640582B2/ja
Application granted granted Critical
Publication of IT1209682B publication Critical patent/IT1209682B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers
IT8523356A 1985-12-23 1985-12-23 Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima. IT1209682B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8523356A IT1209682B (it) 1985-12-23 1985-12-23 Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima.
EP86117863A EP0227085B1 (en) 1985-12-23 1986-12-22 A method of manufacturing igfets having minimal junction depth using epitaxial recrystallization
US06/946,187 US4789644A (en) 1985-12-23 1986-12-22 Process for fabrication, by means of epitaxial recrystallization, of insulated-gate field-effect transistors with junctions of minimum depth
DE86117863T DE3688929T2 (de) 1985-12-23 1986-12-22 Verfahren zum Herstellen von IGFETs mit minimaler Übergangstiefe durch epitaktische Rekristallisation.
JP61305578A JPH0640582B2 (ja) 1985-12-23 1986-12-23 絶縁ゲ−ト電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8523356A IT1209682B (it) 1985-12-23 1985-12-23 Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima.

Publications (2)

Publication Number Publication Date
IT8523356A0 IT8523356A0 (it) 1985-12-23
IT1209682B true IT1209682B (it) 1989-08-30

Family

ID=11206358

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8523356A IT1209682B (it) 1985-12-23 1985-12-23 Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima.

Country Status (5)

Country Link
US (1) US4789644A (it)
EP (1) EP0227085B1 (it)
JP (1) JPH0640582B2 (it)
DE (1) DE3688929T2 (it)
IT (1) IT1209682B (it)

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* Cited by examiner, † Cited by third party
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JPH0824144B2 (ja) * 1987-06-10 1996-03-06 三菱電機株式会社 半導体装置の製造方法
US4923824A (en) * 1988-04-27 1990-05-08 Vtc Incorporated Simplified method of fabricating lightly doped drain insulated gate field effect transistors
JPH0828427B2 (ja) * 1988-09-14 1996-03-21 三菱電機株式会社 半導体装置およびその製造方法
JPH0291932A (ja) * 1988-09-28 1990-03-30 Fujitsu Ltd 半導体装置の製造方法
JP2508818B2 (ja) * 1988-10-03 1996-06-19 三菱電機株式会社 半導体装置の製造方法
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
US5801396A (en) * 1989-01-18 1998-09-01 Stmicroelectronics, Inc. Inverted field-effect device with polycrystalline silicon/germanium channel
EP0606114A1 (en) * 1989-08-11 1994-07-13 Seiko Instruments Inc. Method of producing field effect transistor
US5242858A (en) * 1990-09-07 1993-09-07 Canon Kabushiki Kaisha Process for preparing semiconductor device by use of a flattening agent and diffusion
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
US5250454A (en) * 1992-12-10 1993-10-05 Allied Signal Inc. Method for forming thickened source/drain contact regions for field effect transistors
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
SE9501310D0 (sv) * 1995-04-10 1995-04-10 Abb Research Ltd A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC
TW328650B (en) * 1996-08-27 1998-03-21 United Microelectronics Corp The MOS device and its manufacturing method
US5824586A (en) * 1996-10-23 1998-10-20 Advanced Micro Devices, Inc. Method of manufacturing a raised source/drain MOSFET
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
US5827768A (en) * 1997-07-07 1998-10-27 National Science Council Method for manufacturing an MOS transistor having a self-aligned and planarized raised source/drain structure
US6160299A (en) * 1997-08-29 2000-12-12 Texas Instruments Incorporated Shallow-implant elevated source/drain doping from a sidewall dopant source
US5970352A (en) * 1998-04-23 1999-10-19 Kabushiki Kaisha Toshiba Field effect transistor having elevated source and drain regions and methods for manufacturing the same
US6403433B1 (en) * 1999-09-16 2002-06-11 Advanced Micro Devices, Inc. Source/drain doping technique for ultra-thin-body SOI MOS transistors
US6214680B1 (en) * 1999-12-13 2001-04-10 Chartered Semiconductor Manufacturing, Ltd. Method to fabricate a sub-quarter-micron MOSFET with lightly doped source/drain regions
US6573160B2 (en) * 2000-05-26 2003-06-03 Motorola, Inc. Method of recrystallizing an amorphous region of a semiconductor
US6551885B1 (en) 2001-02-09 2003-04-22 Advanced Micro Devices, Inc. Low temperature process for a thin film transistor
US6756277B1 (en) 2001-02-09 2004-06-29 Advanced Micro Devices, Inc. Replacement gate process for transistors having elevated source and drain regions
US6403434B1 (en) 2001-02-09 2002-06-11 Advanced Micro Devices, Inc. Process for manufacturing MOS transistors having elevated source and drain regions and a high-k gate dielectric
US6495437B1 (en) 2001-02-09 2002-12-17 Advanced Micro Devices, Inc. Low temperature process to locally form high-k gate dielectrics
US6787424B1 (en) * 2001-02-09 2004-09-07 Advanced Micro Devices, Inc. Fully depleted SOI transistor with elevated source and drain
KR100521383B1 (ko) * 2003-11-17 2005-10-12 삼성전자주식회사 소자분리막 상에 형성된 소오스/드레인을 갖는 반도체소자 및 그 제조방법
US7312125B1 (en) 2004-02-05 2007-12-25 Advanced Micro Devices, Inc. Fully depleted strained semiconductor on insulator transistor and method of making the same
KR100679610B1 (ko) * 2006-01-16 2007-02-06 삼성전자주식회사 단결정 구조를 갖는 박막의 형성 방법

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US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
NL8006339A (nl) * 1979-11-21 1981-06-16 Hitachi Ltd Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
US4588447A (en) * 1984-06-25 1986-05-13 Rockwell International Corporation Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films

Also Published As

Publication number Publication date
US4789644A (en) 1988-12-06
EP0227085A2 (en) 1987-07-01
EP0227085A3 (en) 1988-07-06
JPS62247572A (ja) 1987-10-28
DE3688929T2 (de) 1993-12-23
IT8523356A0 (it) 1985-12-23
JPH0640582B2 (ja) 1994-05-25
EP0227085B1 (en) 1993-08-25
DE3688929D1 (de) 1993-09-30

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