IT1192785B - Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico - Google Patents

Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico

Info

Publication number
IT1192785B
IT1192785B IT69328/79A IT6932879A IT1192785B IT 1192785 B IT1192785 B IT 1192785B IT 69328/79 A IT69328/79 A IT 69328/79A IT 6932879 A IT6932879 A IT 6932879A IT 1192785 B IT1192785 B IT 1192785B
Authority
IT
Italy
Prior art keywords
procedure
production
semiconductor field
metal semiconductor
field transistor
Prior art date
Application number
IT69328/79A
Other languages
English (en)
Other versions
IT7969328A0 (it
Inventor
Peter Anthony Crossley
Original Assignee
Fairchild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co
Publication of IT7969328A0 publication Critical patent/IT7969328A0/it
Application granted granted Critical
Publication of IT1192785B publication Critical patent/IT1192785B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
IT69328/79A 1978-12-04 1979-12-03 Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico IT1192785B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/966,182 US4277882A (en) 1978-12-04 1978-12-04 Method of producing a metal-semiconductor field-effect transistor

Publications (2)

Publication Number Publication Date
IT7969328A0 IT7969328A0 (it) 1979-12-03
IT1192785B true IT1192785B (it) 1988-05-04

Family

ID=25511023

Family Applications (1)

Application Number Title Priority Date Filing Date
IT69328/79A IT1192785B (it) 1978-12-04 1979-12-03 Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico

Country Status (8)

Country Link
US (1) US4277882A (it)
JP (1) JPS5578577A (it)
CA (1) CA1124408A (it)
DE (1) DE2947695A1 (it)
FR (1) FR2443744A1 (it)
GB (1) GB2037073B (it)
IT (1) IT1192785B (it)
NL (1) NL7908091A (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357178A (en) * 1978-12-20 1982-11-02 Ibm Corporation Schottky barrier diode with controlled characteristics and fabrication method
JPS5824018B2 (ja) * 1979-12-21 1983-05-18 富士通株式会社 バイポ−ラｉｃの製造方法
US4388121A (en) * 1980-03-21 1983-06-14 Texas Instruments Incorporated Reduced field implant for dynamic memory cell array
GB2084794B (en) * 1980-10-03 1984-07-25 Philips Electronic Associated Methods of manufacturing insulated gate field effect transistors
US4466174A (en) * 1981-12-28 1984-08-21 Texas Instruments Incorporated Method for fabricating MESFET device using a double LOCOS process
JPS6086866A (ja) * 1983-10-19 1985-05-16 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
US4748134A (en) * 1987-05-26 1988-05-31 Motorola, Inc. Isolation process for semiconductor devices
KR0159532B1 (ko) * 1991-12-24 1999-02-01 아이자와 스스무 반도체장치의 제조방법 및 반도체장치
US5358890A (en) * 1993-04-19 1994-10-25 Motorola Inc. Process for fabricating isolation regions in a semiconductor device
US5926707A (en) * 1995-12-15 1999-07-20 Samsung Electronics Co., Ltd. Methods for forming integrated circuit memory devices having deep storage electrode contact regions therein for improving refresh characteristics
KR0161474B1 (ko) * 1995-12-15 1999-02-01 김광호 셀 플러그 이온주입을 이용한 반도체 메모리장치의 제조방법
US5981324A (en) * 1996-10-23 1999-11-09 Samsung Electronics Co., Ltd. Methods of forming integrated circuits having memory cell arrays and peripheral circuits therein

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
US3921283A (en) * 1971-06-08 1975-11-25 Philips Corp Semiconductor device and method of manufacturing the device
NL160988C (nl) * 1971-06-08 1979-12-17 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.
FR2280203A1 (fr) * 1974-07-26 1976-02-20 Thomson Csf Procede d'ajustement de tension de seuil de transistors a effet de champ
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
DE2554450A1 (de) * 1975-12-03 1977-06-16 Siemens Ag Verfahren zur herstellung einer integrierten schaltung
FR2351502A1 (fr) * 1976-05-14 1977-12-09 Ibm Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4149177A (en) * 1976-09-03 1979-04-10 Fairchild Camera And Instrument Corporation Method of fabricating conductive buried regions in integrated circuits and the resulting structures

Also Published As

Publication number Publication date
US4277882A (en) 1981-07-14
IT7969328A0 (it) 1979-12-03
GB2037073A (en) 1980-07-02
GB2037073B (en) 1983-04-13
JPS5578577A (en) 1980-06-13
NL7908091A (nl) 1980-06-06
FR2443744A1 (fr) 1980-07-04
FR2443744B1 (it) 1983-09-30
CA1124408A (en) 1982-05-25
DE2947695A1 (de) 1980-06-19

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