IT1197523B - Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta - Google Patents

Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta

Info

Publication number
IT1197523B
IT1197523B IT22182/86A IT2218286A IT1197523B IT 1197523 B IT1197523 B IT 1197523B IT 22182/86 A IT22182/86 A IT 22182/86A IT 2218286 A IT2218286 A IT 2218286A IT 1197523 B IT1197523 B IT 1197523B
Authority
IT
Italy
Prior art keywords
joints
isolated
gate
manufacture
field
Prior art date
Application number
IT22182/86A
Other languages
English (en)
Other versions
IT8622182A0 (it
Inventor
Laura Meda
Maria Luisa Polignano
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT22182/86A priority Critical patent/IT1197523B/it
Publication of IT8622182A0 publication Critical patent/IT8622182A0/it
Priority to EP87115933A priority patent/EP0265958A3/en
Priority to JP62273600A priority patent/JPS63117459A/ja
Application granted granted Critical
Publication of IT1197523B publication Critical patent/IT1197523B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IT22182/86A 1986-10-30 1986-10-30 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta IT1197523B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT22182/86A IT1197523B (it) 1986-10-30 1986-10-30 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta
EP87115933A EP0265958A3 (en) 1986-10-30 1987-10-29 Process of making insulated- gate field-effect transistors
JP62273600A JPS63117459A (ja) 1986-10-30 1987-10-30 絶縁ゲート電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22182/86A IT1197523B (it) 1986-10-30 1986-10-30 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta

Publications (2)

Publication Number Publication Date
IT8622182A0 IT8622182A0 (it) 1986-10-30
IT1197523B true IT1197523B (it) 1988-11-30

Family

ID=11192707

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22182/86A IT1197523B (it) 1986-10-30 1986-10-30 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta

Country Status (3)

Country Link
EP (1) EP0265958A3 (it)
JP (1) JPS63117459A (it)
IT (1) IT1197523B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59409300D1 (de) * 1993-06-23 2000-05-31 Siemens Ag Verfahren zur Herstellung von einem Isolationsgraben in einem Substrat für Smart-Power-Technologien
JP2002368012A (ja) * 2001-06-06 2002-12-20 Rohm Co Ltd 不純物拡散層の形成方法
JP4933957B2 (ja) * 2007-05-18 2012-05-16 住友ゴム工業株式会社 スポンジたわし

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160034A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Impurity diffusion
CA1198226A (en) * 1982-06-01 1985-12-17 Eliezer Kinsbron Method for manufacturing a semiconductor device
JPS6063961A (ja) * 1983-08-30 1985-04-12 Fujitsu Ltd 半導体装置の製造方法
IT1213192B (it) * 1984-07-19 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori ad effetto di campo agate isolato (igfet) ad elevata velocita' di risposta in circuiti integrati ad alta densita'.
IT1213234B (it) * 1984-10-25 1989-12-14 Sgs Thomson Microelectronics Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.

Also Published As

Publication number Publication date
JPS63117459A (ja) 1988-05-21
EP0265958A3 (en) 1989-09-27
EP0265958A2 (en) 1988-05-04
IT8622182A0 (it) 1986-10-30

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030