IT1225614B - Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato - Google Patents

Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato

Info

Publication number
IT1225614B
IT1225614B IT8883655A IT8365588A IT1225614B IT 1225614 B IT1225614 B IT 1225614B IT 8883655 A IT8883655 A IT 8883655A IT 8365588 A IT8365588 A IT 8365588A IT 1225614 B IT1225614 B IT 1225614B
Authority
IT
Italy
Prior art keywords
manufacture
cmos devices
gate lengths
reduced gate
integrated cmos
Prior art date
Application number
IT8883655A
Other languages
English (en)
Other versions
IT8883655A0 (it
Inventor
Carlo Bergonzoni
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8883655A priority Critical patent/IT1225614B/it
Publication of IT8883655A0 publication Critical patent/IT8883655A0/it
Priority to EP19890830341 priority patent/EP0354193A3/en
Priority to US07/386,189 priority patent/US4997782A/en
Priority to JP1202260A priority patent/JPH0276256A/ja
Application granted granted Critical
Publication of IT1225614B publication Critical patent/IT1225614B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
IT8883655A 1988-08-04 1988-08-04 Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato IT1225614B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8883655A IT1225614B (it) 1988-08-04 1988-08-04 Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato
EP19890830341 EP0354193A3 (en) 1988-08-04 1989-07-24 Fabrication of cmos integrated devices with reduced gate length and lightly doped drain
US07/386,189 US4997782A (en) 1988-08-04 1989-07-28 Fabrication of CMOS integrated devices with reduced gate length and lightly doped drain
JP1202260A JPH0276256A (ja) 1988-08-04 1989-08-03 長さの短いゲートと弱くドープされたドレーンを有するｃｍｏｓ集積デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8883655A IT1225614B (it) 1988-08-04 1988-08-04 Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato

Publications (2)

Publication Number Publication Date
IT8883655A0 IT8883655A0 (it) 1988-08-04
IT1225614B true IT1225614B (it) 1990-11-22

Family

ID=11323680

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8883655A IT1225614B (it) 1988-08-04 1988-08-04 Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato

Country Status (4)

Country Link
US (1) US4997782A (it)
EP (1) EP0354193A3 (it)
JP (1) JPH0276256A (it)
IT (1) IT1225614B (it)

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KR930010124B1 (ko) * 1991-02-27 1993-10-14 삼성전자 주식회사 반도체 트랜지스터의 제조방법 및 그 구조
JPH05109762A (ja) * 1991-05-16 1993-04-30 Internatl Business Mach Corp <Ibm> 半導体装置及びその製造方法
JPH06112149A (ja) * 1992-09-29 1994-04-22 Nec Corp 半導体装置の製造方法
US6432759B1 (en) * 1992-11-24 2002-08-13 Lsi Logic Corporation Method of forming source and drain regions for CMOS devices
US5409847A (en) * 1993-10-27 1995-04-25 Matsushita Electric Industrial Co., Ltd. Manufacturing method of CMOS transistor in which heat treatment at higher temperature is done prior to heat treatment at low temperature
JP2682425B2 (ja) * 1993-12-24 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5489540A (en) * 1995-03-22 1996-02-06 Advanced Micro Devices Inc. Method of making simplified LDD and source/drain formation in advanced CMOS integrated circuits using implantation through well mask
US5534449A (en) * 1995-07-17 1996-07-09 Micron Technology, Inc. Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry
US6004854A (en) * 1995-07-17 1999-12-21 Micron Technology, Inc. Method of forming CMOS integrated circuitry
US5654213A (en) * 1995-10-03 1997-08-05 Integrated Device Technology, Inc. Method for fabricating a CMOS device
JP3216502B2 (ja) * 1995-10-16 2001-10-09 株式会社日立製作所 Ｃｍｏｓ薄膜半導体装置及びその製造方法
US5728613A (en) * 1996-03-27 1998-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method of using an insulator spacer to form a narrow base width lateral bipolar junction transistor
US5686324A (en) * 1996-03-28 1997-11-11 Mosel Vitelic, Inc. Process for forming LDD CMOS using large-tilt-angle ion implantation
JP3191693B2 (ja) * 1996-08-29 2001-07-23 日本電気株式会社 半導体記憶装置の製造方法
US5650341A (en) * 1996-10-03 1997-07-22 Mosel Vitelic Inc. Process for fabricating CMOS Device
US5849622A (en) * 1997-03-07 1998-12-15 Advanced Micro Devices, Inc. Method of forming a source implant at a contact masking step of a process flow
US6060345A (en) * 1997-04-21 2000-05-09 Advanced Micro Devices, Inc. Method of making NMOS and PMOS devices with reduced masking steps
DE19961487B4 (de) * 1999-09-30 2005-08-04 Infineon Technologies Ag Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf
EP1218945A1 (de) 1999-09-30 2002-07-03 Infineon Technologies AG Schaltungsanordnung zur bildung eines mos-kondensators mit geringer spannungsabhängigkeit und geringem flächenbedarf
KR100552827B1 (ko) * 2004-12-22 2006-02-21 동부아남반도체 주식회사 깊은 웰과 게이트 산화막을 동시에 형성하는 고전압반도체 소자의 제조 방법
DE102010005009A1 (de) 2010-01-19 2011-07-21 Faurecia Innenraum Systeme GmbH, 76767 Verfahren zur Herstellung eines Dekorteils
CN104167391A (zh) 2014-08-11 2014-11-26 矽力杰半导体技术(杭州)有限公司 Cmos结构的制造方法
CN113555362A (zh) * 2021-07-29 2021-10-26 上海华虹宏力半导体制造有限公司 Cmos器件及工艺方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590663A (en) * 1982-02-01 1986-05-27 Texas Instruments Incorporated High voltage CMOS technology with N-channel source/drain extensions
JPS5952849A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd 半導体装置の製造方法
DE3584113D1 (de) * 1984-06-15 1991-10-24 Harris Corp Verfahren zum herstellen selbstjustierter bereiche in einem substrat.
US4577391A (en) * 1984-07-27 1986-03-25 Monolithic Memories, Inc. Method of manufacturing CMOS devices
US4764477A (en) * 1987-04-06 1988-08-16 Motorola, Inc. CMOS process flow with small gate geometry LDO N-channel transistors
US4753898A (en) * 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4771014A (en) * 1987-09-18 1988-09-13 Sgs-Thomson Microelectronics, Inc. Process for manufacturing LDD CMOS devices

Also Published As

Publication number Publication date
EP0354193A3 (en) 1990-09-12
JPH0276256A (ja) 1990-03-15
IT8883655A0 (it) 1988-08-04
EP0354193A2 (en) 1990-02-07
US4997782A (en) 1991-03-05

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970829